IRF8736PBF vs BSO150N03MDGXUMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF8736PBF tarafından Infineon ve BSO150N03MDGXUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IRF8736PBF | BSO150N03MDGXUMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TA=70°C | [DATA_NEEDED: ID at TA=70°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) at VGS=10V | 4.8 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | 6.0 mΩ (typical) | — |
| Gate-Source Threshold Voltage VGS(th) | Logic-level (optimized for 5 V drive) | — |
| Total Gate Charge Qg | 17 nC (typical) | — |
| Maximum Power Dissipation at TA=25°C | 2.5 W | — |
| İşletim Sıcaklığı Aralığı | -55°C to +150°C (junction) | -55C to +150C |
| Paket | SO-8 (8-SO) | PG-DSO-8 (SO-8 with exposed pad) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 (Unlimited) | 1 (unlimited) |
| RoHS / Lead-Free | Lead-Free, RoHS3 Compliant | — |
| Qualification Standard | JEDEC | — |
| Avalanche Rated | Yes (fully characterized avalanche voltage and current) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSO150N03MDGXUMA1 |
| Product Type | — | Dual N-Channel MOSFET Array |
| Technology | — | OptiMOS 3M (30V trench MOSFET) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) max per channel | — | 9.3 A |
| On-State Resistance (RDS(on)) max | — | 15 mOhm at VGS=10V |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.0 V |
| Power Dissipation (PD) max | — | 1.4 W |
| RoHS Durumu | — | Compliant |
| Channel Configuration | — | Dual N-Channel (independent) |