IRLB4030PBF vs IRFZ48NSTRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRLB4030PBF tarafından Infineon ve IRFZ48NSTRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRLB4030PBF | IRFZ48NSTRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | 55 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 4.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 87 nC | 54 nC |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] | ±20 V |
| Power Dissipation (PD) at Tc | 370 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C | — |
| Paket | TO-220AB | D2PAK (TO-263) Surface Mount |
| Montaj Türü | Through Hole | Surface Mount |
| Technology | HEXFET (StrongIRFET family) | — |
| Logic Level Drive | Yes (optimized for 4.5 V to 10 V VGS) | — |
| Qualification | JEDEC | — |
| RoHS Durumu | Compliant | Compliant |
| FET Type | — | N-Channel Power MOSFET |
| Continuous Drain Current (ID) @ Tc=25C | — | 64 A |
| Static Drain-to-Source On-Resistance (Rds(on)) | — | 14 mΩ at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Power Dissipation (Pd) @ Tc=25C | — | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | — | 3.8 W |
| İşletim Jant Sıcaklığı | — | -55C to +175C |
| Packaging | — | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | — | Lead-free (PBF) matte tin |
| Technology Family | — | HEXFET advanced process technology |