IRLB4132PBF vs IRLB4030PBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRLB4132PBF tarafından Infineon ve IRLB4030PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRLB4132PBF IRLB4030PBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Transistor Türü N-Channel MOSFET (HEXFET) N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID, Tc=25C) 78 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Maximum Power Dissipation (PD, Tc=25C) 140 W —
On-Resistance (RDS(on), VGS=10V) 3.5 mOhm (typical) —
On-Resistance (RDS(on), VGS=4.5V) [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th), typical) 1.0 V to 2.5 V —
Gate Charge (Qg, typical) [DATA_NEEDED: total gate charge] —
Maximum Junction Temperature 175 C —
İşletim Sıcaklığı Aralığı -55 C to +175 C -55C to +175C
Paket / Kas TO-220AB (through-hole, 3 leads) —
Montaj Türü Through Hole Through Hole
Lead-Free / RoHS Yes (Pb-free PBF suffix) —
AEC-Q101 Automotive Qualification Not qualified (industrial/commercial) —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 180 A
On-Resistance RDS(on) max at VGS=10V — 4.3 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 87 nC
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc — 370 W
Paket — TO-220AB
Technology — HEXFET (StrongIRFET family)
Logic Level Drive — Yes (optimized for 4.5 V to 10 V VGS)
Qualification — JEDEC
RoHS Durumu — Compliant

Dökümanlar & Kaynaklar

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