IRLB4132PBF vs IRLB4030PBF 比較
詳細並排比較 IRLB4132PBF 由 Infineon 與 IRLB4030PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLB4132PBF | IRLB4030PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| 電晶體類型 | N-Channel MOSFET (HEXFET) | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Tc=25C) | 78 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Maximum Power Dissipation (PD, Tc=25C) | 140 W | — |
| On-Resistance (RDS(on), VGS=10V) | 3.5 mOhm (typical) | — |
| On-Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th), typical) | 1.0 V to 2.5 V | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: total gate charge] | — |
| Maximum Junction Temperature | 175 C | — |
| 工作溫度範圍 | -55 C to +175 C | -55C to +175C |
| 封裝 / 外殼 | TO-220AB (through-hole, 3 leads) | — |
| 安裝類型 | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (Pb-free PBF suffix) | — |
| AEC-Q101 Automotive Qualification | Not qualified (industrial/commercial) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| On-Resistance RDS(on) max at VGS=10V | — | 4.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 87 nC |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] |
| Power Dissipation (PD) at Tc | — | 370 W |
| 封裝 | — | TO-220AB |
| Technology | — | HEXFET (StrongIRFET family) |
| Logic Level Drive | — | Yes (optimized for 4.5 V to 10 V VGS) |
| Qualification | — | JEDEC |
| RoHS 狀態 | — | Compliant |