ISC009N06LM5ATMA1 vs ISC016N08NM8ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma ISC009N06LM5ATMA1 tarafından Infineon ve ISC016N08NM8ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | ISC009N06LM5ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | Trench-gate OptiMOS 8 (silicon) |
| Transistor Türü | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 41 A | 29 A |
| Continuous Drain Current (ID) at Tc | 348 A | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C | -55 C to +150 C (junction) |
| Paket | PG-TSON-8-3 (SuperSO8 5x6) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| RoHS Durumu | Compliant | Compliant |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |