K9DVGY8J5M vs K9HUGY8J5B-BCK0 Karşılaştırma

Ayrıntılı yan yana karşılaştırma K9DVGY8J5M tarafından Samsung Electronics ve K9HUGY8J5B-BCK0 tarafından Samsung ElectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Aktif
Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ Aktif

Özellik Karşılaştırması

Parametre K9DVGY8J5M K9HUGY8J5B-BCK0
Marka Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Samsung Electronics Samsung Electronics
Product Type Raw NAND Flash Memory —
NAND Technology Samsung V-NAND (3D TLC) —
Flash ID EC519A3F8CCB —
Density [DATA_NEEDED: die density (Gb)] [DATA_NEEDED: device density]
Organization (Page/Block) [DATA_NEEDED: page and block organization] —
Arayüz Türü [DATA_NEEDED: interface (toggle DDR / async)] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] [DATA_NEEDED: VCCQ range]
Program Page Time (tPROG) [DATA_NEEDED: tPROG typical/us] —
Block Erase Time (tBERS) [DATA_NEEDED: tBERS typical/us] —
Read Time (tR) [DATA_NEEDED: tR typical/us] —
Program/Erase Endurance [DATA_NEEDED: P/E cycle endurance] —
İşletim Sıcaklığı [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Package Type [DATA_NEEDED: package type and dimensions] —
Montaj Türü Surface Mount Surface Mount
RoHS Durumu [DATA_NEEDED: RoHS status] Compliant
Product Family — K9HUG (V-NAND flash)
Bellek Türü — NAND Flash (3D V-NAND)
Cell Type — [DATA_NEEDED: SLC/MLC/TLC/QLC]
Organizasyon — [DATA_NEEDED: page/block organization]
Bus Width — [DATA_NEEDED: x8 or x16]
Arayüz — [DATA_NEEDED: asynchronous/toggle DDR]
Page Program Time — [DATA_NEEDED: tPROG]
Page Read Time — [DATA_NEEDED: tR]
Block Erase Time — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: P/E cycles]
Paket — [DATA_NEEDED: package code, e.g. FBGA]

Dökümanlar & Kaynaklar

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