M29F400FB55N3F2 vs M29F400FT55N3F2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma M29F400FB55N3F2 tarafından Micron Technology ve M29F400FT55N3F2 tarafından Micron TechnologyAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktifÖzellik Karşılaştırması
| Parametre | M29F400FB55N3F2 | M29F400FT55N3F2 |
|---|---|---|
| Marka | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Bellek Türü | NOR Flash | NOR Flash (SLC) |
| Density | 4 Mbit (4194 kbit) | — |
| Organizasyon | 256K x 16 / 512K x 8 | 256K x 16 |
| Access Time | 55 ns | 55 ns |
| Besleme Gerilimi | 5 V | 5 V |
| Arayüz | Parallel | Parallel |
| Boot Block | Bottom boot block | — |
| İşletim Sıcaklığı | -40C to +125C | [DATA_NEEDED: min operating temperature] |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Paket | 48-TSOP I | 44-SO (SOP-44) |
| Montaj Türü | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| RoHS Durumu | Compliant (lead-free build per F2 suffix) | — |
| Bellek Boyutu | — | 4 Mbit |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |