MPX12DP vs MPXC2011DT1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MPX12DP tarafından NXP Semiconductors ve MPXC2011DT1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MPXC2011DT1 - 10kPa Differential Pressure Sensor 4-SSIP | NXP
MPXC2011DT1 ✓ AktifÖzellik Karşılaştırması
| Parametre | MPX12DP | MPXC2011DT1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Yaşam Döngüsü Durumu | Obsolete | Aktif |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Sensitivity | 5.5 mV/kPa typical | 2.5 mV/kPa typical |
| Full-Scale Span | 35 mV typical (20 mV min / 75 mV max) | — |
| Çıkış Gerilimi Aralığı | 0 mV to 55 mV at 3 V excitation | — |
| Excitation Voltage | 3 V DC typical | 3 V DC to 10 V DC (10 V nominal) |
| Linearity | +/-5% of span | — |
| Pressure Port Style | Dual axial tube, 4.93 mm (0.19 in) diameter | — |
| Compensation | Uncompensated (external required) | On-chip temperature compensated and calibrated |
| Çıkış Türü | Analog Wheatstone bridge (mV) | Analog Wheatstone bridge (ratiometric) |
| Package / Mounting | 4-SIP through-hole module | — |
| İşletim Sıcaklığı | -40C to +125C | 0 °C to +85 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Montaj Türü | Through Hole | Through-hole (PCB mount with side-port tubing) |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status not in web data] |
| Lead Free | [DATA_NEEDED: lead-free status] | — |
| MSL Seviyesi | Not applicable (through-hole) | — |
| Full-Scale Output | — | 25 mV typical at 10 V excitation |
| Paket | — | 4-SSIP Chip Pak module, side port |
| Port Style | — | Female, 3.25 mm (0.128 in) barbed side port |
| Termination Style | — | Through-hole PCB, 4 leads |
| Technology | — | Piezoresistive silicon strain gauge |
| Module Dimensions | — | 7.6 mm x 12.8 mm nominal |