MRF5S19060NBR1 vs MRF6S18100NBR1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF5S19060NBR1 tarafından NXP Semiconductors ve MRF6S18100NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Aktif
NXP Semiconductors
MRF6S18100NBR1 MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 Obsolete

Özellik Karşılaştırması

Parametre MRF5S19060NBR1 MRF6S18100NBR1
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Obsolete
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Transistor Türü N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Configuration Dual Die (2 x N), Common Source Single, common-source
Frequency Band 1930 MHz to 1990 MHz —
Output Power (P1dB) 60 W (CW/peak) —
Output Power (Average) 12 W avg. —
Drain Supply Voltage 28 V (typical) —
Drain-Source Voltage (Vdss) 65 V (max) —
Power Gain 14 dB at 1.99 GHz —
Drain Current 750 mA (typical operating DC) —
Paket TO-272 WB-4 (overmolded plastic) —
Montaj Türü Surface Mount (SMD) Surface Mount / Flange Mount
Pin Sayısı 5 —
Peak Reflow Temperature 260 C —
Maximum Power Dissipation (Absolute) 218.8 W —
Technology Silicon LDMOS —
RoHS Durumu [DATA_NEEDED: RoHS compliance status] Compliant (per NXP product page)
MSL Seviyesi [DATA_NEEDED: MSL moisture sensitivity level] —
Application — RF Power Amplifier (GSM/GSM EDGE base station)
Frequency Range — 1805 MHz to 1990 MHz
Test Frequency — 1.99 GHz
Drain-Source Voltage (V(BR)DSS) — 68 V
Test Supply Voltage (VDD) — 28 V
Test Drain Current — 900 mA
Output Power (Pout) — 100 W
Power Gain (Gps) — 14.5 dB (typical at 1.99 GHz)
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Paket / Kas — TO-272 WB-4
Supplier Device Package — TO-272 WB-4
Operating Mode — Class AB / Class C (per design)

Dökümanlar & Kaynaklar

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