MRF5S9101MR1 vs MRF5S9101NR1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF5S9101MR1 tarafından NXP Semiconductors ve MRF5S9101NR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF5S9101MR1 MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 Obsolete

Özellik Karşılaştırması

Parametre MRF5S9101MR1 MRF5S9101NR1
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Obsolete Aktif
Transistor Türü LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology RF Power Field Effect Transistor —
Frequency Range 869 MHz to 960 MHz 869 MHz to 960 MHz
Test Frequency 960 MHz 960 MHz
Test Voltage 26 V —
Test Current (Quiescent) 700 mA —
Power Output (POUT) 100 W (CW) —
Power Gain 17.5 dB at 960 MHz 17.5 dB (typ at 960 MHz, 26 V, 700 mA)
Drain-Source Voltage (Rated) 68 V —
Drain Current Rating [DATA_NEEDED: maximum continuous drain current] —
Paket / Kas TO-270 WB-4 (Case 1486-03, Style 1) TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold
Supplier Device Package TO-270 WB-4 —
Montaj Türü Chassis / Flange Mount (through-hole flange) Surface / Flange Mount (through-board thermal pad)
Lead Free Status Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) —
RoHS Durumu Compliant (lead-free N-suffix variants) —
İşletim Sıcaklığı [DATA_NEEDED: operating temperature range] —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Thermal Resistance Junction-to-Case [DATA_NEEDED: RθJC value] —
Application GSM / GSM EDGE / N-CDMA base station final-stage PA GSM / GSM EDGE base station PAs, 869–960 MHz
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale Semiconductor)
Part Number — MRF5S9101NR1
Output Power (P1dB) — 100 W (typ)
Drain Supply Voltage (Vdd) — 26 V (nominal), 28 V (max operating)
Drain Breakdown Voltage (Vdss) — 68 V
Quiescent Current (Idq) — 700 mA
Drain Current (Test) — 700 mA
İşletim Sıcaklığı Aralığı — [DATA_NEEDED: operating temperature range]
Junction Temperature (Max) — 200 °C
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
Lead-Free / RoHS — Lead-free (N suffix indicates lead-free transition)
Thermal Resistance (junction-to-case) — [DATA_NEEDED: theta_JC]

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