MRF5S9101MR1 vs MRF5S9101NR1 比較

詳細並排比較 MRF5S9101MR1 由 NXP Semiconductors 與 MRF5S9101NR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF5S9101MR1 MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 Obsolete
NXP Semiconductors
MRF5S9101NR1 MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors

MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors

MRF5S9101NR1 ✓ 啟用中

規格比較

參數 MRF5S9101MR1 MRF5S9101NR1
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 Obsolete 啟用中
電晶體類型 LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology RF Power Field Effect Transistor —
Frequency Range 869 MHz to 960 MHz 869 MHz to 960 MHz
Test Frequency 960 MHz 960 MHz
Test Voltage 26 V —
Test Current (Quiescent) 700 mA —
Power Output (POUT) 100 W (CW) —
Power Gain 17.5 dB at 960 MHz 17.5 dB (typ at 960 MHz, 26 V, 700 mA)
Drain-Source Voltage (Rated) 68 V —
Drain Current Rating [DATA_NEEDED: maximum continuous drain current] —
封裝 / 外殼 TO-270 WB-4 (Case 1486-03, Style 1) TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold
Supplier Device Package TO-270 WB-4 —
安裝類型 Chassis / Flange Mount (through-hole flange) Surface / Flange Mount (through-board thermal pad)
Lead Free Status Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent) —
RoHS 狀態 Compliant (lead-free N-suffix variants) —
工作溫度 [DATA_NEEDED: operating temperature range] —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Thermal Resistance Junction-to-Case [DATA_NEEDED: RθJC value] —
Application GSM / GSM EDGE / N-CDMA base station final-stage PA GSM / GSM EDGE base station PAs, 869–960 MHz
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale Semiconductor)
Part Number — MRF5S9101NR1
Output Power (P1dB) — 100 W (typ)
Drain Supply Voltage (Vdd) — 26 V (nominal), 28 V (max operating)
Drain Breakdown Voltage (Vdss) — 68 V
Quiescent Current (Idq) — 700 mA
Drain Current (Test) — 700 mA
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
Junction Temperature (Max) — 200 °C
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
Lead-Free / RoHS — Lead-free (N suffix indicates lead-free transition)
Thermal Resistance (junction-to-case) — [DATA_NEEDED: theta_JC]

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