MRF6S21060NBR1 vs MRF6S21060BR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S21060NBR1 tarafından NXP Semiconductors ve MRF6S21060BR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S21060BR1 - 14W RF Power LDMOS Transistor 2.12GHz | NXP
MRF6S21060BR1 ObsoleteÖzellik Karşılaştırması
| Parametre | MRF6S21060NBR1 | MRF6S21060BR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Obsolete |
| Transistor Türü | LDMOS, N-Channel Enhancement-Mode | N-Channel Enhancement-Mode LDMOS |
| Technology | RF Power Field Effect Transistor | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.12 GHz | — |
| Test Drain Voltage (VDD) | 28 V | — |
| Test Quiescent Current (IDQ) | 1600 mA | — |
| Power Gain | 15.5 dB | 15.5 dB at 2.12 GHz |
| Output Power (Avg, Single-Carrier W-CDMA) | 14 W | — |
| Power Added Efficiency | [DATA_NEEDED: PAE %] | — |
| Operating Mode | Class AB | Class AB |
| Paket | TO-272 WB-4 (ceramic flanged) | — |
| Montaj Türü | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| RoHS Durumu | compliant | — |
| Lead Free | yes | — |
| Target Application | W-CDMA base station final stage | W-CDMA base station final-stage PA |
| Drain-Source Voltage (Vdss) | — | 68 V |
| Test Voltage | — | 28 V |
| Test Current | — | 610 mA |
| Output Power (Pout) | — | 14 W |
| Frequency Range | — | Up to 2170 MHz |
| Paket / Kas | — | TO-272 WB-4 (ceramic) |
| Lead Free Status | — | Lead Free |
| Suitable For | — | TDMA, CDMA, multicarrier amplifier applications |
| Current Rating (Datasheet) | — | 10 uA |
| Manufacturer | — | NXP (formerly Freescale Semiconductor) |