MRF8S21200HR6 vs MRF8S21200HSR6 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF8S21200HR6 tarafından NXP Semiconductors ve MRF8S21200HSR6 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ AktifÖzellik Karşılaştırması
| Parametre | MRF8S21200HR6 | MRF8S21200HSR6 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET |
| Frequency | 2.11 GHz to 2.17 GHz (2110-2170 MHz) | — |
| Test Voltage | 28 V | 28 V |
| Test Current | 1.4 A | — |
| Power Gain | 18.1 dB | 18.1 dB |
| Output Power (Average) | 48 W | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Configuration | Common Source, 2 elements | — |
| Case Connection | Source | — |
| Montaj Türü | Surface Mount (NI-1230 ceramic flange) | — |
| Paket | NI-1230 | — |
| Application | W-CDMA, LTE base station power amplifiers | — |
| Class of Operation | Class AB, Class C | — |
| Surface Mount | Yes | — |
| RoHS Durumu | Compliant | — |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Output Power (Avg, W-CDMA/LTE) | — | 48 W at 28 V |
| Test Current (Quiescent) | — | 1.4 A |
| Minimum Breakdown Voltage (Drain-Source) | — | 65 V |
| Maximum Junction Temperature | — | 225 C |
| Mounting Configuration | — | Surface Mount (NI-1230HS ceramic package) |
| Application Class | — | Class AB, Class C (cellular base station modulation) |
| Peak Reflow Temperature | — | 260 C |
| Number of Elements / Configuration | — | Dual, Common Source, 2 Elements |
| Lead Free Status | — | Lead Free |
| Technology | — | Silicon LDMOS (lateral double-diffused MOSFET) |
| Target Modulation | — | W-CDMA, LTE, TD-LTE |