MRFE6S9160HR3 vs MRF6S9130HSR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRFE6S9160HR3 tarafından NXP Semiconductors ve MRF6S9130HSR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ AktifÖzellik Karşılaştırması
| Parametre | MRFE6S9160HR3 | MRF6S9130HSR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Transistor Türü | N-Channel Enhancement-Mode Lateral MOSFET | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Technology | HV6E lateral MOSFET (LDMOS-like) | LDMOS (laterally diffused MOS) |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | [DATA_NEEDED: drain efficiency figure] |
| Paket / Kas | NI-780H-2L (ceramic/metal air-cavity flange-mount) | NI-780S (CASE 465-06, Style 1) ceramic flange |
| Montaj Türü | Chassis / Flange mount (through-hole RF leads) | Chassis / flange mount with screw-down |
| İşletim Sıcaklığı Aralığı | -40C to +150C (junction) | [DATA_NEEDED: Tj operating range] |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Seviyesi | Not applicable (non-SMD air-cavity package) | — |
| Part Status | — | Active |
| Operating Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| Pin Sayısı | — | 3 |
| Style | — | Style 1 |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |