MRFE6S9160HR3 vs MRF6S9130HSR3 比較
詳細並排比較 MRFE6S9160HR3 由 NXP Semiconductors 與 MRF6S9130HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ 啟用中規格比較
| 參數 | MRFE6S9160HR3 | MRF6S9130HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| 電晶體類型 | N-Channel Enhancement-Mode Lateral MOSFET | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Technology | HV6E lateral MOSFET (LDMOS-like) | LDMOS (laterally diffused MOS) |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | [DATA_NEEDED: drain efficiency figure] |
| 封裝 / 外殼 | NI-780H-2L (ceramic/metal air-cavity flange-mount) | NI-780S (CASE 465-06, Style 1) ceramic flange |
| 安裝類型 | Chassis / Flange mount (through-hole RF leads) | Chassis / flange mount with screw-down |
| 工作溫度範圍 | -40C to +150C (junction) | [DATA_NEEDED: Tj operating range] |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL 等級 | Not applicable (non-SMD air-cavity package) | — |
| Part Status | — | Active |
| Operating Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| 腳位數 | — | 3 |
| Style | — | Style 1 |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |