2EP110RXTMA1 - 5W Full-Bridge Transformer Driver | Infineon
MPN: 2EP110RXTMA1 ✓ فعال2EP110RXTMA1 جائزہ
What is a transformer driver PMIC? A transformer driver PMIC is a power-management IC that generates an isolated, regulated voltage rail by switching a centre-tapped transformer at high frequency and rectifying the secondary winding. It sits in the signal chain between a low-voltage control supply (typically 5 V or 12 V) and a floating gate-driver supply, replacing discrete push-pull or Royer oscillators with a single regulated, oscillator-free IC. Within the broader taxonomy: transformer driver PMIC -> isolated gate-driver supply -> gate driver -> power management IC -> semiconductor.
Key features of the 2EP110RXTMA1 include 5 W of output power, integrated full-bridge MOSFETs, internal soft-start, under-voltage lockout (UVLO), and over-temperature protection. The device accepts a single 20 V supply and produces a stable, transformer-isolated output suitable for biasing IGBT or SiC MOSFET gate drivers in industrial inverters, photovoltaic converters, and electric-vehicle traction stages.
The architecture uses two internal half-bridges that drive the primary of an external centre-tapped transformer at a fixed 50/65 kHz frequency, selected by a logic pin. The secondary is rectified and filtered to produce an isolated rail. Compared with discrete Royer or push-pull oscillators, the 2EP110RXTMA1 reduces component count, eliminates the start-up resistor bias network, and provides a precisely controlled switching frequency that simplifies EMI filter design.
Typical applications include isolated gate-driver supplies for IGBT modules, SiC MOSFET gate-drive bias rails in solar inverters, traction inverters in EV powertrains, and industrial motor drives. The 5 W output comfortably powers two to four gate-driver channels, and the small PG-TSSOP-8 footprint enables compact designs.
When designing with this part, choose the transformer turns ratio and secondary rectifier to match the desired isolated rail voltage (commonly +15 V / -5 V or +18 V / -3 V for SiC). Place the input decoupling capacitor within 2 mm of the VCC pin and keep the transformer primary loop area minimal to control EMI.
This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل 2EP110RXTMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں 2EP110RXTMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Topology, Package, Number of Outputs, Operating Temperature Range, Output Configuration.
2EP130RXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EP101RXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EP110RXTMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Product Type | Full-Bridge Transformer Driver PMIC |
| ٹوپولوجی | Full-bridge (two internal half-bridges) |
| Input Voltage (VCC) | 20 V nominal |
| Output Power | 5 W |
| سوئچنگ فریکوئنسی | 50 kHz / 65 kHz (selectable) |
| Target Loads | IGBT and SiC MOSFET gate driver supplies |
| پیکیج | PG-TSSOP-8 |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت | -40C to +125C |
| Protection Features | Under-voltage lockout (UVLO), over-temperature shutdown (OTP), soft-start |
| آؤٹ پٹ کنفیگریشن | Drives external centre-tapped transformer (rectification on secondary) |
| MSL لیول | MSL 3 (per JEDEC J-STD-020) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
| ہیلوجن فری | Yes |
2EP110RXTMA1 پن کنفیگریشن
| پن 1 | HS1 — High-side drive 1 (half-bridge output to transformer primary) |
| پن 2 | HS2 — High-side drive 2 (half-bridge output to transformer primary) |
| پن 3 | EN/SS — Enable / soft-start input |
| پن 4 | GND — Ground |
| پن 5 | LS1 — Low-side drive 1 (half-bridge output to transformer primary) |
| پن 6 | LS2 — Low-side drive 2 (half-bridge output to transformer primary) |
| پن 7 | FS — Frequency-select input (50 kHz / 65 kHz) |
| پن 8 | VCC — 20 V supply input |
عام استعمالات
2EP110RXTMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Isolated IGBT Gate-Drive Supply, SiC MOSFET Gate-Drive Bias, Solar / Photovoltaic Inverter Gate Bias, Electric Vehicle Traction Inverter Bias, Industrial Motor Drive Gate-Bias Stage, Welding & Induction-Heating Inverter Bias.
Isolated IGBT Gate-Drive Supply
The 2EP110RXTMA1's 5 W output and integrated full-bridge make it a strong fit for isolated IGBT gate-driver supplies in industrial motor drives and three-phase inverters. Driving a small centre-tapped transformer at the pin-selectable 50 kHz or 65 kHz, it produces the standard +15 V and -5 V or -8 V isolated rails required by IGBT modules such as the Infineon EasyPACK and PrimePACK families. Compared with self-oscillating Royer converters, the 2EP110RXTMA1 eliminates the start-up resistor network, reduces transformer saturation risk, and provides a fixed frequency that simplifies EMI input-filter design. Place the input bulk capacitor within 2 mm of VCC and use a low-leakage-inductance primary loop.
تجویز کردہ
SiC MOSFET Gate-Drive Bias
The 2EP110RXTMA1 supplies the higher-voltage, asymmetric rails (+18 V / -3 V or +20 V / -5 V) that SiC MOSFET gate drivers demand. Its fixed-frequency operation avoids the audible noise and EMI of Royer oscillators - critical in SiC designs where switching edges already push 50-100 V/ns. The 5 W budget comfortably biases two or three SiC gate-driver channels, and the PG-TSSOP-8 footprint keeps the bias stage compact next to the gate-driver ICs. Use a transformer with low primary leakage inductance (<1 uH) and a fast-recovery secondary rectifier to maintain rail accuracy under SiC switching transients.
تجویز کردہ
Solar / Photovoltaic Inverter Gate Bias
In string and central photovoltaic inverters, the 2EP110RXTMA1 generates the isolated gate-drive rails for the IGBT or SiC half-bridge that switches the DC-link to the grid-tie filter. The wide 20 V VCC input is conveniently derived from a 24 V auxiliary rail, and the fixed 50/65 kHz clock keeps the bias converter's EMI out of the inverter's sensitive current-sense and MPPT control bands. The integrated UVLO and over-temperature protection improve field reliability - critical for inverters mounted in outdoor enclosures with temperature swings of -25 C to +70 C.
تجویز کردہ
Electric Vehicle Traction Inverter Bias
The 2EP110RXTMA1 produces the isolated +15 V / -5 V rails that bias the gate drivers of EV traction-inverter IGBT or SiC modules. Its fixed switching frequency avoids the variability of Royer oscillators across the -40 C to +125 C automotive under-hood temperature range, and its small PG-TSSOP-8 footprint supports the high-power-density layout that traction inverters require. Pair the 2EP110RXTMA1 with automotive-grade gate drivers such as the Infineon 1ED31xx family to build a compact, AEC-Q-qualified gate-drive bias stage.
تجویز کردہ
Industrial Motor Drive Gate-Bias Stage
The 2EP110RXTMA1 supplies the isolated rails for the IGBT modules in industrial variable-frequency drives (VFDs) and servo amplifiers. Its 5 W output comfortably drives three or four gate-driver channels in a typical 3-phase 600 V / 1200 V IGBT inverter stage, and its integrated soft-start limits inrush current at power-up - critical when multiple bias converters start simultaneously. The PG-TSSOP-8 footprint simplifies layout next to the gate-driver ICs.
تجویز کردہ
Welding & Induction-Heating Inverter Bias
In welding machines and induction-heating inverters, the 2EP110RXTMA1 generates the isolated gate-drive rails for the high-current IGBT or SiC switches. The fixed-frequency operation avoids the magnetostrictive audible noise that Royer oscillators exhibit, and the integrated OTP shutdown protects the bias stage in the high-ambient-temperature environment typical of these enclosed products. The 5 W output budget supports the two-channel gate-drive configuration common in half-bridge and full-bridge induction heating topologies.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا 2EP110RXTMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | 2EP130RXTMA1 | 2EP101RXTMA1 |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-TSSOP-8 | PG-TSSOP-8 - same | PG-TSSOP-8 - same |
| Topology | Full-bridge transformer driver | Full-bridge transformer driver | Full-bridge transformer driver |
| Protection Features | UVLO, OTP, soft-start | UVLO, OTP, soft-start (same family) | UVLO, OTP, soft-start (same family) |
| Target Application | IGBT / SiC MOSFET gate-drive supply | IGBT / SiC MOSFET gate-drive supply | IGBT / SiC MOSFET gate-drive supply |
اہم امتیازی خصوصیات
- Integrated full-bridge replaces discrete Royer oscillator (بمقابلہDiscrete Royer / push-pull oscillator implementation)
- Single-IC solution with integrated protection (بمقابلہDiscrete oscillator + driver MOSFET implementation)
- Pin-compatible 2EP1xxR family scaling (بمقابلہ2EP130RXTMA1 (higher power) and 2EP101RXTMA1 (lower power))
ڈیزائن نوٹس
Place the VCC input bulk capacitor within 2 mm of the VCC pin (pin 8) and the GND return via a short, wide trace to the package thermal pad. Keep the transformer primary loop area as small as possible - route the HS1/HS2 and LS1/LS2 traces directly over a continuous ground plane to minimise radiated EMI. The PG-TSSOP-8 thermal pad must be soldered to a copper pour of at least 25 mm^2 for adequate heat dissipation at full 5 W output.
At 5 W continuous output into the gate-drive rails, the 2EP110RXTMA1 dissipates roughly 0.5-1.0 W internally depending on transformer and switching losses. With the PG-TSSOP-8 thermal pad soldered to 25 mm^2 of 1 oz copper, the junction-to-ambient thermal resistance (theta_JA) is approximately 80 C/W, resulting in a 40-80 C junction temperature rise above ambient. Above +85 C ambient, derate output power or add additional copper area to maintain junction temperature below +125 C.
Do not omit the EN/SS capacitor on pin 3 - it sets the soft-start time and prevents inrush current that can trip upstream protection. Select a transformer with primary inductance matched to the 50 kHz or 65 kHz operating frequency to avoid saturation; the Infineon 2EP1xxR datasheet lists recommended transformer part numbers. Avoid using a Royer-style transformer; the 2EP110RXTMA1 expects a centre-tapped primary winding. Ensure the secondary rectifier diode is rated for at least 2x the maximum isolated rail voltage and has fast reverse recovery (<50 ns).
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - check the Infineon automotive-grade catalogue for an equivalent AEC-Q part if required.
