2EP110RXTMA1 - 5W Full-Bridge Transformer Driver | Infineon
MPN: 2EP110RXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.66 | $26.60 |
| 100 | $2.36 | $236.00 |
| 500 | $2.13 | $1,065.00 |
| 1,000 | $1.92 | $1,920.00 |
Drop-in alternatives for 2EP110RXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2EP130RXTMA1
✅ Drop-In✓ In Stock
$1.2 / Unit
View Datasheet →2EP101RXTMA1
✅ Drop-In✓ In Stock
$0.88 / Unit
View Datasheet →2EP110RXTMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Full-Bridge Transformer Driver PMIC |
| Topology | Full-bridge (two internal half-bridges) |
| Input Voltage (VCC) | 20 V nominal |
| Output Power | 5 W |
| Switching Frequency | 50 kHz / 65 kHz (selectable) |
| Target Loads | IGBT and SiC MOSFET gate driver supplies |
| Package | PG-TSSOP-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40C to +125C |
| Protection Features | Under-voltage lockout (UVLO), over-temperature shutdown (OTP), soft-start |
| Output Configuration | Drives external centre-tapped transformer (rectification on secondary) |
| MSL Level | MSL 3 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
2EP110RXTMA1 Pin Configuration
| Pin 1 | HS1 — High-side drive 1 (half-bridge output to transformer primary) |
| Pin 2 | HS2 — High-side drive 2 (half-bridge output to transformer primary) |
| Pin 3 | EN/SS — Enable / soft-start input |
| Pin 4 | GND — Ground |
| Pin 5 | LS1 — Low-side drive 1 (half-bridge output to transformer primary) |
| Pin 6 | LS2 — Low-side drive 2 (half-bridge output to transformer primary) |
| Pin 7 | FS — Frequency-select input (50 kHz / 65 kHz) |
| Pin 8 | VCC — 20 V supply input |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
2EP110RXTMA1 is suitable for 6 applications: Isolated IGBT Gate-Drive Supply, SiC MOSFET Gate-Drive Bias, Solar / Photovoltaic Inverter Gate Bias, Electric Vehicle Traction Inverter Bias, Industrial Motor Drive Gate-Bias Stage, Welding & Induction-Heating Inverter Bias.
Isolated IGBT Gate-Drive Supply
The 2EP110RXTMA1's 5 W output and integrated full-bridge make it a strong fit for isolated IGBT gate-driver supplies in industrial motor drives and three-phase inverters. Driving a small centre-tapped transformer at the pin-selectable 50 kHz or 65 kHz, it produces the standard +15 V and -5 V or -8 V isolated rails required by IGBT modules such as the Infineon EasyPACK and PrimePACK families. Compared with self-oscillating Royer converters, the 2EP110RXTMA1 eliminates the start-up resistor network, reduces transformer saturation risk, and provides a fixed frequency that simplifies EMI input-filter design. Place the input bulk capacitor within 2 mm of VCC and use a low-leakage-inductance primary loop.
Recommended
SiC MOSFET Gate-Drive Bias
The 2EP110RXTMA1 supplies the higher-voltage, asymmetric rails (+18 V / -3 V or +20 V / -5 V) that SiC MOSFET gate drivers demand. Its fixed-frequency operation avoids the audible noise and EMI of Royer oscillators - critical in SiC designs where switching edges already push 50-100 V/ns. The 5 W budget comfortably biases two or three SiC gate-driver channels, and the PG-TSSOP-8 footprint keeps the bias stage compact next to the gate-driver ICs. Use a transformer with low primary leakage inductance (<1 uH) and a fast-recovery secondary rectifier to maintain rail accuracy under SiC switching transients.
Recommended
Solar / Photovoltaic Inverter Gate Bias
In string and central photovoltaic inverters, the 2EP110RXTMA1 generates the isolated gate-drive rails for the IGBT or SiC half-bridge that switches the DC-link to the grid-tie filter. The wide 20 V VCC input is conveniently derived from a 24 V auxiliary rail, and the fixed 50/65 kHz clock keeps the bias converter's EMI out of the inverter's sensitive current-sense and MPPT control bands. The integrated UVLO and over-temperature protection improve field reliability - critical for inverters mounted in outdoor enclosures with temperature swings of -25 C to +70 C.
Recommended
Electric Vehicle Traction Inverter Bias
The 2EP110RXTMA1 produces the isolated +15 V / -5 V rails that bias the gate drivers of EV traction-inverter IGBT or SiC modules. Its fixed switching frequency avoids the variability of Royer oscillators across the -40 C to +125 C automotive under-hood temperature range, and its small PG-TSSOP-8 footprint supports the high-power-density layout that traction inverters require. Pair the 2EP110RXTMA1 with automotive-grade gate drivers such as the Infineon 1ED31xx family to build a compact, AEC-Q-qualified gate-drive bias stage.
Recommended
Industrial Motor Drive Gate-Bias Stage
The 2EP110RXTMA1 supplies the isolated rails for the IGBT modules in industrial variable-frequency drives (VFDs) and servo amplifiers. Its 5 W output comfortably drives three or four gate-driver channels in a typical 3-phase 600 V / 1200 V IGBT inverter stage, and its integrated soft-start limits inrush current at power-up - critical when multiple bias converters start simultaneously. The PG-TSSOP-8 footprint simplifies layout next to the gate-driver ICs.
Recommended
Welding & Induction-Heating Inverter Bias
In welding machines and induction-heating inverters, the 2EP110RXTMA1 generates the isolated gate-drive rails for the high-current IGBT or SiC switches. The fixed-frequency operation avoids the magnetostrictive audible noise that Royer oscillators exhibit, and the integrated OTP shutdown protects the bias stage in the high-ambient-temperature environment typical of these enclosed products. The 5 W output budget supports the two-channel gate-drive configuration common in half-bridge and full-bridge induction heating topologies.
Recommended
Recommended Products Summary
Engineering reference data for 2EP110RXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EP130RXTMA1 | 2EP101RXTMA1 |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-TSSOP-8 | PG-TSSOP-8 - same | PG-TSSOP-8 - same |
| Topology | Full-bridge transformer driver | Full-bridge transformer driver | Full-bridge transformer driver |
| Output Power Class | 5 W | Higher-power class [DATA_NEEDED] | Lower-power class [DATA_NEEDED] |
| Switching Frequency | 50 kHz / 65 kHz (selectable) | Same family - selectable [DATA_NEEDED] | Same family - selectable [DATA_NEEDED] |
| Input Voltage (VCC) | 20 V nominal | 20 V nominal [DATA_NEEDED] | 20 V nominal [DATA_NEEDED] |
| Protection Features | UVLO, OTP, soft-start | UVLO, OTP, soft-start (same family) | UVLO, OTP, soft-start (same family) |
| Target Application | IGBT / SiC MOSFET gate-drive supply | IGBT / SiC MOSFET gate-drive supply | IGBT / SiC MOSFET gate-drive supply |
Key Differentiators
- Integrated full-bridge replaces discrete Royer oscillator (vs Discrete Royer / push-pull oscillator implementation)
- Single-IC solution with integrated protection (vs Discrete oscillator + driver MOSFET implementation)
- Pin-compatible 2EP1xxR family scaling (vs 2EP130RXTMA1 (higher power) and 2EP101RXTMA1 (lower power))
Design Notes
Place the VCC input bulk capacitor within 2 mm of the VCC pin (pin 8) and the GND return via a short, wide trace to the package thermal pad. Keep the transformer primary loop area as small as possible - route the HS1/HS2 and LS1/LS2 traces directly over a continuous ground plane to minimise radiated EMI. The PG-TSSOP-8 thermal pad must be soldered to a copper pour of at least 25 mm^2 for adequate heat dissipation at full 5 W output.
At 5 W continuous output into the gate-drive rails, the 2EP110RXTMA1 dissipates roughly 0.5-1.0 W internally depending on transformer and switching losses. With the PG-TSSOP-8 thermal pad soldered to 25 mm^2 of 1 oz copper, the junction-to-ambient thermal resistance (theta_JA) is approximately 80 C/W, resulting in a 40-80 C junction temperature rise above ambient. Above +85 C ambient, derate output power or add additional copper area to maintain junction temperature below +125 C.
Do not omit the EN/SS capacitor on pin 3 - it sets the soft-start time and prevents inrush current that can trip upstream protection. Select a transformer with primary inductance matched to the 50 kHz or 65 kHz operating frequency to avoid saturation; the Infineon 2EP1xxR datasheet lists recommended transformer part numbers. Avoid using a Royer-style transformer; the 2EP110RXTMA1 expects a centre-tapped primary winding. Ensure the secondary rectifier diode is rated for at least 2x the maximum isolated rail voltage and has fast reverse recovery (<50 ns).
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - check the Infineon automotive-grade catalogue for an equivalent AEC-Q part if required.
