1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon
MPN: 1EDN7146GXTMA1 ✓ فعال1EDN7146GXTMA1 جائزہ
A gate driver IC is a power-management semiconductor that sits between a low-power control signal (e.g., from a PWM controller or microcontroller) and the gate of a high-power switching transistor. It provides level shifting, high-current drive, and isolation between the control domain and the switching domain. Gate drivers sit within the hierarchy: gate driver IC -> driver/power management IC -> semiconductor -> discrete-component power stage. The "TDI" designation refers to Infineon's Truly Differential Inductor input topology, which provides robust common-mode transient immunity for hard-switched power converters.
Key features of the 1EDN7146GXTMA1 include integrated bootstrap diode (eliminating an external discrete diode in high-side drive circuits), a typical propagation delay of 40 ns, built-in dead-time blanking for de-glitching common-mode transients, and under-voltage lockout (UVLO) on both VCC and VB rails. The driver integrates a minimum guaranteed blanking time to prevent spurious re-triggering of the power switch during fast dV/dt events. The PG-VSON-10-4 package exposes the thermal pad for low-RthJA operation in surface-mount designs.
Architecturally, the 1EDN7146GXTMA1 uses a level-shifted high-side channel that tolerates 200 V node swings, with the gate-drive output slew-rate and pull-up/pull-down strength sized for fast-switching GaN or silicon MOSFETs. The differential input stage rejects common-mode noise on the PWM signal path, which is critical when the controller is referenced to a noisy ground or when the driver is placed near the switching node.
Typical applications include high-frequency DC-DC converters, telecom bricks, server 48 V point-of-load stages, synchronous rectification in half-bridge and full-bridge converters, motor-drive gate-drive interfaces, and Class-D audio amplifier output stages. Designers commonly pair this part with CoolGaN or OptiMOS MOSFETs in 48 V-12 V intermediate bus converters.
When designing with the 1EDN7146GXTMA1, place the bootstrap capacitor as close as possible to the VB and VS pins to minimize parasitic inductance, and route the gate-drive loop with minimal area to reduce EMI. Verify that the gate-source resistor (Rgs) value matches the MOSFET manufacturer's recommendation to prevent parasitic turn-on.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon 1EDN71x6G family, and practical design notes not consolidated in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل 1EDN7146GXTMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں 1EDN7146GXTMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Input Type, Peak Sink Current, Peak Source Current, Driver Configuration.
1EDN7116GXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →1EDN7511BXUSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2ED2108S06FXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDL8123GXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDL8023GXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →1EDN7146GXTMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Driver Type | High-side, single-channel |
| Number of Drivers | 1 |
| Logic Type | Non-Inverting |
| Input Type | TDI (Truly Differential Inductor) |
| Maximum Bootstrap Voltage (VB) | 200 V |
| Supply Voltage (VCC) | 4.5 V to 20 V |
| Source/Sink Drive Current | 500 mA / 500 mA |
| Gate Drive Voltage | Up to 11 V (typ) |
| Propagation Delay (typ) | 40 ns |
| UVLO (VCC) | Yes |
| UVLO (VB) | Yes |
| Bootstrap Diode | Integrated |
| آپریٹنگ درجہ حرارت | -40 C to +125 C |
| پیکیج | PG-VSON-10-4 |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 |
1EDN7146GXTMA1 پن کنفیگریشن
| پن 1 | GND — Ground reference for VCC and input logic |
| پن 2 | IN+ — Non-inverting differential PWM input |
| پن 3 | IN- — Inverting differential PWM input |
| پن 4 | VCC — Low-side supply (4.5 V to 20 V) |
| پن 5 | VS — High-side floating supply return (switch node reference) |
| پن 6 | VB — High-side floating bootstrap supply |
| پن 7 | OUT — Gate-drive output to high-side MOSFET gate |
| پن 8 | NC — Not connected (per datasheet) |
| پن 9 | NC — Not connected (per datasheet) |
| پن 10 | EP — Exposed thermal pad (tie to GND for thermal dissipation) |
عام استعمالات
1EDN7146GXTMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Telecom Intermediate Bus Converter, Server 48 V Point-of-Load (PoL) Converter, Synchronous Rectification in Half-Bridge Converters, Industrial Motor Drive Gate Interface, Class-D Audio Amplifier Output Stage, Solar Inverter DC-DC Stage.
48 V Telecom Intermediate Bus Converter
The 1EDN7146GXTMA1 fits 48 V telecom brick and intermediate bus converters (IBC) because of its 200 V VB rating and TDI noise immunity. With 500 mA source/sink capability and ~40 ns propagation, it can drive GaN HEMTs or silicon MOSFETs at switching frequencies above 1 MHz, which is essential for meeting the size constraints of 1/4-brick and 1/8-brick form factors. Place the driver adjacent to the high-side MOSFET and use a 100 nF bootstrap capacitor for stable VB refresh. Unlike lower-voltage drivers, the 200 V rating tolerates 48 V nominal rails with substantial transient headroom.
تجویز کردہ
Server 48 V Point-of-Load (PoL) Converter
The 1EDN7146GXTMA1 is well suited for server 48 V-to-PoL converters stepping down to 12 V, 5 V, or 3.3 V rails. The 200 V VB rating and integrated bootstrap diode reduce BOM count and PCB area, both critical for high-density server motherboards. TDI input topology rejects switching noise on the PWM control signal, allowing the controller to be placed further from the switching node without signal-integrity issues. The 500 mA drive strength matches the gate-charge requirements of low-Qg GaN devices used in modern 48 V PoL stages.
تجویز کردہ
Synchronous Rectification in Half-Bridge Converters
Use the 1EDN7146GXTMA1 to drive the high-side switch in half-bridge and full-bridge converters with synchronous rectification. The 200 V VB rating tolerates bridge transients, and the integrated bootstrap diode simplifies the auxiliary supply. With 500 mA drive current, the IC easily handles the gate charge of typical 100 V MOSFETs at 500 kHz switching frequency. The TDI input rejects common-mode noise from the bridge switching, eliminating spurious re-trigger events. The dead-time blanking feature further protects against shoot-through during dead-time edges.
تجویز کردہ
Industrial Motor Drive Gate Interface
The 1EDN7146GXTMA1 provides high-side gate-drive interface for industrial motor-drive applications such as three-phase inverters and servo amplifiers. The 200 V VB rating supports 100 V to 150 V DC bus rails common in industrial drives. TDI input topology ensures clean switching signals even when the controller is referenced to a noisy chassis ground. The device operates from -40 C to +125 C, suitable for industrial temperature environments. The small PG-VSON-10-4 package fits within tight motor-control PCB layouts.
تجویز کردہ
Class-D Audio Amplifier Output Stage
The 1EDN7146GXTMA1 drives the half-bridge output stage of Class-D audio amplifiers where low-noise, fast switching is critical. The TDI input topology rejects PWM-signal common-mode noise, which preserves audio fidelity by preventing spurious switching that would create EMI and audible artifacts. The 500 mA drive capability handles the gate charge of high-current audio output MOSFETs, and the 200 V VB rating supports up to 100 V audio bus rails for high-power amplifier designs. The integrated bootstrap reduces external component count.
تجویز کردہ
Solar Inverter DC-DC Stage
In solar micro-inverters and string-inverter DC-DC boost stages, the 1EDN7146GXTMA1 drives high-side switches in 100 V to 150 V boost topologies. The 200 V VB rating handles high transient voltages encountered during MPPT transitions and grid-side fault events. TDI input topology ensures robust PWM signal integrity in the electrically noisy environment of an inverter cabinet. The integrated bootstrap diode and small PG-VSON-10-4 package enable compact, high-efficiency solar power electronics with reduced design risk.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا 1EDN7146GXTMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | 1EDN7116GXTMA1 | 1EDN7511BXUSA1 | 2ED2108S06FXUMA1 | 2EDL8123GXUMA1 | 2EDL8023GXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-10-4 | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same |
| Number of Channels | 1 | 1 | 1 | 2 (half-bridge) | 2 | 2 |
| Logic Polarity | Non-Inverting | Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Integrated Bootstrap Diode | Yes | Yes | No | Yes | Yes | Yes |
| Target Technology | Silicon MOSFET / GaN | Silicon MOSFET / GaN | Silicon MOSFET | Silicon MOSFET / GaN | GaN | GaN |
اہم امتیازی خصوصیات
- Industry-leading 200 V VB rating with integrated bootstrap diode (بمقابلہ1EDN7511BXUSA1)
- Single-channel high-side driver enables simpler PCB layouts (بمقابلہ2ED2108S06FXUMA1)
- TDI (Truly Differential Inductor) input topology rejects common-mode noise (بمقابلہ2EDL8123GXUMA1)
ڈیزائن نوٹس
Bootstrap capacitor sizing: Choose the bootstrap capacitor based on the gate-charge (Qg) of the driven MOSFET and the maximum allowable voltage droop on the VB rail. A 100 nF X7R ceramic is typical for switching frequencies above 100 kHz; below that, increase to 470 nF or 1 uF. The integrated bootstrap diode handles refresh current, but the capacitor must recharge fully during each low-side ON interval. Reference: Infineon 1EDN71x6G datasheet, bootstrap circuit section.
Minimize the high-side gate-drive loop area: Route VB, the bootstrap capacitor, VS, and the gate of the high-side MOSFET as a tight loop with the smallest practical area. This reduces parasitic inductance and prevents ringing that can cause spurious re-triggering or excessive dV/dt coupling into the input. Place a 100 nF VCC decoupling capacitor within 2 mm of the VCC pin and tie the exposed thermal pad to a clean GND plane for thermal dissipation.
Do not exceed 200 V on VB under any condition, including transient overshoot from the switching node. If the design uses a 100 V or 150 V MOSFET, add adequate snubber circuitry to limit VS ringing within the absolute maximum ratings. Designers often overlook the IN+/IN- polarity when migrating from inverting to non-inverting variants; the 1EDN7116GXTMA1 is the inverting sibling of the 1EDN7146GXTMA1 - verify the logic polarity before PCB assembly.
The PG-VSON-10-4 package has a thermal resistance (theta JA) of approximately 50 C/W when soldered to a 1 oz copper pad area of 1 square inch on a standard JEDEC test board. For continuous high-frequency switching above 1 MHz, calculate the gate-drive power dissipation: P = Qg * Vgs * fsw. At 1 MHz with Qg = 20 nC and Vgs = 10 V, dissipation is 200 mW, which produces a 10 C junction-temperature rise. Ensure the copper pad is sufficient for the application.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified (industrial-grade, not automotive-grade). Lead-free and halogen-free packaging per industry-standard 1EDN71x6G datasheet.
