BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
MPN: BSF134N10NJ3GXUMA1 ✓ فعالBSF134N10NJ3GXUMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or switch current in power-conversion circuits. Within the broader taxonomy it sits at MOSFET → transistor → discrete semiconductor → semiconductor. The OptiMOS family specifically targets high-efficiency switched-mode power supplies (SMPS), motor drives, and synchronous rectification, where low conduction and switching losses translate directly into higher system efficiency and smaller thermal budgets.
Key features of the BSF134N10NJ3 G include a low on-state resistance for the 100 V class, an integrated body diode for synchronous-rectifier operation, and the compact CanPAK M / MG-WDSON-2 footprint with an exposed top-cooling pad. The device is rated for surface-mount reflow and is supplied on tape-and-reel for high-volume assembly. The drain-lead frame is bottom-side, allowing direct PCB heatsinking through the drain pad.
Architecturally, the device uses Infineon's planar OptiMOS cell design with trench-gate technology to balance low RDS(on), low gate charge (Qg), and robust avalanche capability. Optimized FOM (RDS(on) × Qg) reduces switching losses at high frequency, which is critical for telecom and server SMPS stages operating at 100 kHz to 500 kHz.
Typical applications include primary-side switches and synchronous rectifiers in 48 V telecom and server SMPS, 24 V to 80 V industrial motor drives, battery-management protection FETs in e-mobility and power tools, and high-side switches in solar micro-inverters. The 100 V rating provides adequate margin in 60 V / 72 V systems.
When designing with this part, verify the PCB drain pad copper area is sufficient to keep junction temperature below 150 °C under worst-case load, and place the gate drive loop compact to minimize ringing at high di/dt. This page combines distributor pricing, drop-in alternatives, and design guidance that go beyond the manufacturer's datasheet alone.
کے لیے ڈراپ اِن متبادل BSF134N10NJ3GXUMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSF134N10NJ3GXUMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), MSL Level, Configuration.
BSC019N08NS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0921NDIATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC014NE2LSIATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD068N10N3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB024N10N5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSF134N10NJ3GXUMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 100 V |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A |
| Continuous Drain Current (ID) at TC=25°C | 40 A |
| Power Dissipation (PD) at TA=25°C | 2.2 W |
| Power Dissipation (PD) at TC=25°C | 43 W |
| پیکیج | MG-WDSON-2 (CanPAK M) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Configuration | Single with built-in diode |
| Terminal Position | Bottom |
| Terminal Finish | Silver Nickel |
| RoHS اسٹیٹس | Compliant |
| Technology | Trench-gate OptiMOS planar |
BSF134N10NJ3GXUMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input |
| پن 2 | Source — Source connection (top-side pad) |
| پن 3 | Drain — Drain tab (bottom-side, PCB heatsink) |
عام استعمالات
BSF134N10NJ3GXUMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Telecom and Server SMPS Primary-Side Switch, 24 V to 80 V Industrial Motor Drive Half-Bridge, Battery-Management Protection FET (48 V e-Mobility), Synchronous Rectifier in 48 V-to-12 V DC-DC Converters, Solar Micro-Inverter High-Side Switch, Hot-Swap / Inrush Protection Switch (48 V Bus).
48 V Telecom and Server SMPS Primary-Side Switch
The BSF134N10NJ3GXUMA1's 100 V VDS rating and 9 A / 40 A continuous drain current make it well-suited for primary-side switching in isolated 48 V telecom and server SMPS designs. The 30 % RDS(on) improvement of the 100 V OptiMOS family reduces conduction loss at the 100 kHz to 500 kHz switching frequencies typical in these converters, lowering total power dissipation by approximately 10 to 15 % versus the prior generation. With 2.2 W / 43 W dissipation ratings, the CanPAK M package exposes the drain pad to the PCB copper pour for direct cooling. Placed on the primary-side MOSFET position of a half-bridge or full-bridge topology, it supports 90 %+ peak efficiency required by 80 PLUS Titanium server PSUs.
تجویز کردہ
24 V to 80 V Industrial Motor Drive Half-Bridge
In 24 V, 48 V, and 80 V industrial BLDC and PMSM motor drives, the BSF134N10NJ3GXUMA1 serves as a low-side or high-side MOSFET in three-phase half-bridges. The 100 V VDS gives 25 % voltage headroom above the 80 V bus maximum, accommodating back-EMF and transient ringing without avalanche breakdown. The integrated body diode supports free-wheeling during PWM commutation, eliminating the need for external anti-parallel diodes and shrinking PCB area. With a low FOM (RDS(on) × Qg) from the OptiMOS 100 V family, switching losses at 20 to 50 kHz PWM are minimized, allowing continuous motor current above 9 A with moderate copper heatsinking.
تجویز کردہ
Battery-Management Protection FET (48 V e-Mobility)
The BSF134N10NJ3GXUMA1 is suitable as a high-side or low-side protection MOSFET in 48 V battery packs for light electric vehicles, e-bikes, and battery-powered industrial tools. The 100 V breakdown comfortably exceeds the 48 V nominal pack plus transient spikes during regenerative braking or load dump, while the 40 A TC rating supports continuous discharge currents of typical 20 to 30 A e-bike drive trains. Infineon's OptiMOS 100 V family provides low RDS(on) to minimize voltage drop and self-heating during idle-on protection mode. The MG-WDSON-2 footprint allows dense PCB layouts inside space-constrained battery enclosures.
تجویز کردہ
Synchronous Rectifier in 48 V-to-12 V DC-DC Converters
As a synchronous rectifier on the secondary side of an isolated 48 V-to-12 V DC-DC converter, the BSF134N10NJ3GXUMA1 replaces the secondary-side Schottky diode to recover rectification losses. The built-in body diode maintains continuous conduction during the dead-time interval, and the low RDS(on) reduces conduction loss to under 1 % of output power at 10 A load. Switching losses at 200 to 400 kHz are dominated by gate charge, and the OptiMOS family's optimized FOM keeps total loss budget inside the converter's thermal envelope. The 100 V VDS provides ample margin over the reflected secondary stress.
تجویز کردہ
Solar Micro-Inverter High-Side Switch
The BSF134N10NJ3GXUMA1 is a strong candidate for the high-side switch in 60 V solar micro-inverters, where the 100 V VDS comfortably covers the 40 V to 60 V open-circuit PV string maximum and inductive ringing during commutation. Its 9 A continuous rating matches typical micro-inverter power levels of 300 W to 600 W at the panel level. The OptiMOS 100 V family's low gate charge and low FOM support the high switching frequencies (50 kHz to 100 kHz) needed to keep magnetic components small in residential micro-inverter designs.
تجویز کردہ
Hot-Swap / Inrush Protection Switch (48 V Bus)
In 48 V telecom hot-swap and eFuse applications, the BSF134N10NJ3GXUMA1 functions as the load-side protection MOSFET, controlling the inrush current when a board is plugged into a live 48 V backplane. The 100 V VDS provides margin over the maximum bus voltage and transient ringing from hot-plug events, while the 40 A TC rating supports typical server card currents of 20 A to 30 A. The low RDS(on) keeps steady-state conduction loss low in the always-on protection FET position. Designers should add a gate-source resistor network to control the dv/dt ramp during turn-on.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSF134N10NJ3GXUMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC019N08NS5ATMA1 | BSC0921NDIATMA1 | BSC014NE2LSIATMA1 | IPD068N10N3GATMA1 | IPB024N10N5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | MG-WDSON-2 (CanPAK M) | PG-TDSON-8 (CanPAK M family) | PG-TDSON-8 (CanPAK M family) | PG-TDSON-8 (CanPAK M family) | TO-252 (DPAK) | TO-263 (D2PAK) |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 80 V | 30 V | 25 V | 100 V | 100 V |
| OptiMOS Family | 100 V OptiMOS | 80 V OptiMOS | 30 V OptiMOS | 25 V OptiMOS | 100 V OptiMOS 3 | 100 V OptiMOS 5 |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
اہم امتیازی خصوصیات
- 30 % lower RDS(on) versus previous-generation OptiMOS (بمقابلہBSC019N08NS5ATMA1 (80 V OptiMOS 5))
- Higher voltage class with same CanPAK M footprint (بمقابلہBSC0921NDIATMA1 (30 V CanPAK M))
- Integrated body diode for synchronous-rectifier operation (بمقابلہIPD068N10N3GATMA1 (TO-252 DPAK))
- Lower junction temperature rise in compact surface-mount package (بمقابلہIPB024N10N5ATMA1 (D2PAK, through-hole style))
ڈیزائن نوٹس
Estimated: at 100 % duty-cycle switching from a 48 V bus with 9 A continuous drain current (TA = 25 °C) the worst-case junction rise in MG-WDSON-2 is dominated by thermal resistance from the drain pad to PCB copper. Provide at least 1 square inch (≈ 6.5 cm²) of 2 oz copper on the drain pad to keep junction temperature below 125 °C in 48 V SMPS service. Forced-air cooling is required if ambient exceeds 40 °C.
Keep the gate-drive loop (gate resistor + driver IC return) as compact as possible - target a loop area under 1 cm² to minimize ringing at high di/dt. Place the gate-source 10 kΩ pull-down resistor directly at the gate pad to prevent accidental turn-on during hot-plug or transient ringing. A small ferrite bead on the gate lead can damp high-frequency oscillations in CanPAK M layouts.
Do not exceed VGS = ±20 V absolute maximum - 10 V nominal VGS is recommended for lowest RDS(on). Avoid body-diode reverse recovery issues by ensuring dead-time in synchronous-rectifier topologies is at least 50 ns. Do not apply gate drive when drain-source voltage exceeds 80 % of VDS rating during abnormal load conditions; add a transient-voltage suppressor across drain-source if the bus is hot-pluggable.
Per IPC-2221 and IPC-7351 surface-mount guidelines for WDSON-2 packages, the land pattern should be a 1:1 mirror of the device footprint with no thermal relief spokes on the drain pad - the goal is maximum thermal conductivity into the PCB copper. Use via arrays under the drain pad (typical 0.3 mm via diameter, 0.6 mm pitch) for double-sided cooling on a 4-layer board.
تعمیل کی معلومات
RoHS/REACH compliant per Infineon product page ('G' suffix). Lead-free (silver-nickel terminal finish). AEC-Q100 not applicable - this part is in the standard OptiMOS 100 V industrial grade; automotive-grade OptiMOS parts carry the Q suffix.
