IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPD068N10N3GATMA1 ✓ فعالIPD068N10N3GATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals. Within the broader hierarchy, MOSFETs sit under discrete semiconductors, then transistors, then semiconductor devices. N-channel enhancement-mode MOSFETs like the IPD068N10N3GATMA1 are the workhorse of synchronous rectification, low-side switches, and DC-DC converter power stages because their lower on-resistance per unit silicon area delivers superior conduction efficiency versus P-channel equivalents.
Key specifications include VDS = 100V maximum drain-source voltage, ID = 90A continuous drain current at Tc, VGS(th) in the 2.0-4.0V typical range for standard gate drive, and a logic-compatible gate threshold enabling direct MCU or gate-driver interface. The PG-TO252-3 (DPAK) package provides a low thermal-resistance path via the exposed tab, and the device is rated for -55°C to +175°C junction temperature operation. OptiMOS 3 technology combines trench-cell structure with optimized epitaxy for low gate charge and fast switching transitions.
Typical applications include synchronous rectification in 48V telecom and server bus converters, primary-side switches in telecom bricks, motor drive H-bridges, hot-swap and OR-ing controllers, eMobility DC-DC stages, and solar micro-inverters. The 100V rating provides substantial design margin for 48V nominal rails with inductive ringing, while the 6.8 mOhm RDS(on) minimizes conduction loss at high current.
Design tip: always respect the SOA (Safe Operating Area) boundaries during turn-on of inductive loads, and use a Kelvin-source connection (when available) to suppress source-inductance-induced gate oscillation. The 175°C junction rating permits operation at elevated ambient temperatures provided thermal vias under the DPAK tab keep the case-to-ambient rise within budget.
This page synthesizes distributor pricing, drop-in DPAK alternatives, and practical design notes not found in the manufacturer datasheet, helping power engineers select, source, and second-source this 100V OptiMOS 3 part with confidence.
کے لیے ڈراپ اِن متبادل IPD068N10N3GATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD068N10N3GATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, MSL Level, Operating Temperature Range, Drain-Source Voltage (VDS).
IPD088N10N3GATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD069N10N3GATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB027N10N3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD90N06S404ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB024N10N5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTD4906N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD068N10N3GATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | IPD068N10N3GATMA1 |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 90 A |
| On-Resistance RDS(on) max | 6.8 mOhm |
| Power Dissipation (PD) at Tc | 150 W |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) |
| پیکیج | PG-TO252-3 (DPAK, 2 leads + tab) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ جنکشن درجہ حرارت | -55 C to +175 C |
| Channel Type | N-Channel |
| Configuration | Single |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 |
| Packing | Tape & Reel (T/R) |
| Qualification | Industrial (non-automotive) |
IPD068N10N3GATMA1 پن کنفیگریشن
| پن 1 | Gate (G) — Gate control input |
| پن 2 | Drain (D) — Drain connection (also tied to exposed tab) |
| پن 3 | Source (S) — Source connection |
محفوظ آپریٹنگ ایریا (DC, Tc=25C)
عام استعمالات
IPD068N10N3GATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Telecom Synchronous Rectification, Server and Datacenter DC-DC Converters, Motor Drive H-Bridge (Low-Voltage), Hot-Swap and OR-ing Controllers, Solar Micro-Inverter and MPPT Stages, Industrial SMPS and Welding Inverters.
48V Telecom Synchronous Rectification
The IPD068N10N3GATMA1's 6.8 mOhm RDS(on) and 100V VDS rating make it ideal for synchronous-rectifier positions in 48V telecom bus converters. At 50A load, conduction loss is approximately 17W, enabling >97% efficiency in full-bridge LLC topologies. The DPAK package allows direct PCB-side cooling through the exposed tab, and the 90A continuous rating provides substantial design margin for peak rectifier currents. Compared to Schottky-diode rectification, the MOSFET synchronous approach eliminates diode forward-voltage drop (typically 0.5-0.8V) and recovers 20-30W at full load. Designers should add a dead-time control circuit to prevent shoot-through during switching transitions.
تجویز کردہ
Server and Datacenter DC-DC Converters
In 48V-to-12V intermediate-bus converters for hyperscale datacenters, the IPD068N10N3GATMA1 serves as the primary-side switch in hard-switched or resonant topologies. Its OptiMOS 3 technology delivers low gate charge (Qg) for fast switching at 100-300 kHz, and the 100V breakdown withstands ringing on 48V nominal rails. The DPAK footprint is compatible with high-density SMD assembly lines used by server PSU OEMs. At 30A continuous and 100 kHz, estimated switching loss is 3-5W per device. Pair with a digital controller such as the Infineon XMC1300 for peak-current-mode control and adaptive dead-time optimization.
تجویز کردہ
Motor Drive H-Bridge (Low-Voltage)
The IPD068N10N3GATMA1 is well suited for H-bridge positions in 24-48V brushless DC motor drives, robotics, and e-bike controllers. The 90A continuous rating supports multi-kilowatt motor power, and the 100V VDS provides 2x safety margin over a 48V battery bus with inductive ringing. The DPAK package enables four MOSFETs to be placed on a compact PCB with shared thermal copper. Designers should add gate-source resistors (typically 10-100 kOhm) to prevent Miller-effect turn-on, and use a gate driver with sufficient sink current (1-2A) to control dv/dt. The 175°C junction rating permits sustained high-current operation at elevated ambient temperatures.
تجویز کردہ
Hot-Swap and OR-ing Controllers
In -48V telecom hot-swap and redundant OR-ing applications, the IPD068N10N3GATMA1 acts as the low-side switch or OR-ing FET, leveraging its 100V VDS and 6.8 mOhm RDS(on) to minimize voltage drop during normal operation. The 90A continuous rating supports high-current distribution boards, while the 175°C Tj-max allows sustained operation in poorly ventilated chassis. Add a current-sense resistor and a hot-swap controller IC to implement inrush-current limiting. The DPAK footprint accommodates the necessary gate-drive and sense circuitry on a compact PCB.
تجویز کردہ
Solar Micro-Inverter and MPPT Stages
The IPD068N10N3GATMA1 fits solar micro-inverter and MPPT buck stages operating from 60-cell or 72-cell panel strings (Voc up to 50V at cold extremes). The 100V VDS rating provides margin for inductive transients and grid-side transients in transformer-coupled topologies, while the 6.8 mOhm RDS(on) minimizes conduction loss in continuous-conduction-mode MPPT operation. The DPAK package's thermal pad allows direct attachment to an aluminum substrate for outdoor enclosure cooling. For full-bridge inverter legs, pair two IPD068N10N3GATMA1 with a gate driver and a digital MPPT controller. Estimated annual energy yield improvement over a 10 mOhm alternative is 0.3-0.5% in 200W micro-inverter applications.
تجویز کردہ
Industrial SMPS and Welding Inverters
In industrial SMPS, induction-heating, and small-welding-inverter applications, the IPD068N10N3GATMA1 serves as a primary-side switch in ZVS or hard-switched topologies. The 100V VDS withstands leakage-inductance spikes, and the 90A continuous rating supports multi-kW output power. The 6.8 mOhm RDS(on) reduces primary-side conduction loss by 15-20% versus the previous generation, improving overall inverter efficiency. Designers should use a ferrite-core transformer with low leakage inductance, and add RC snubbers across the primary winding to limit dv/dt. The DPAK package is compatible with wave-solder and selective-solder assembly for hybrid power modules.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD068N10N3GATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD088N10N3GATMA1 | IPD069N10N3GATMA1 | IPB027N10N3GATMA1 | NTD4906N |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| VDS (V) | 100 V | 100 V | 100 V | 100 V | 100 V |
| ID continuous (A) | 90 A | 80 A | 90 A | 180 A | 76 A |
| RDS(on) max (mOhm) | 6.8 mOhm | 8.8 mOhm | 6.9 mOhm | 2.7 mOhm | 7.5 mOhm |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | Trench MOSFET |
| Power Dissipation (W) | 150 W | 150 W | 150 W | 300 W | 125 W |
| Junction Temperature (C) | 175 C | 175 C | 175 C | 175 C | 175 C |
اہم امتیازی خصوصیات
- Best-in-class RDS(on) in 100V DPAK OptiMOS 3 family (بمقابلہIPD088N10N3GATMA1)
- Compact DPAK footprint with high current capability (بمقابلہIPB027N10N3GATMA1 (D2PAK))
- Proven OptiMOS 3 technology with broad second-source availability (بمقابلہNTD4906N (onsemi))
ڈیزائن نوٹس
Estimated: At ID=50A and RDS(on)=6.8 mOhm, conduction loss is approximately 17W. The DPAK (PG-TO252-3) package has a typical theta_JA of 50 C/W on a 1 sq-inch copper pad on FR-4, producing a junction temperature rise of ~140 C above ambient. For reliable operation at 50A continuous, design the PCB thermal pad with at least 2-3 sq inches of copper, thermal vias to inner planes, and consider an aluminum substrate for >40A sustained current. Always verify thermal performance under worst-case ambient and airflow conditions.
Route the gate-drive trace as a short, direct path from the driver IC to the gate pin, with the gate-source resistor placed within 5mm of the gate pin. Keep the power loop (drain-source) area minimal to reduce parasitic inductance, which can cause voltage spikes exceeding VDS rating during turn-off. For high-di/dt applications, use a snubber (RC or RCD) across the drain-source terminals. Place a 10kOhm pull-down resistor on the gate to prevent inadvertent turn-on during power-up sequencing.
Do not exceed the SOA boundaries during turn-on of inductive loads. The single-pulse avalanche rating (EAR) is a non-repetitive limit - repetitive avalanche operation reduces lifetime. Always add a TVS diode or RC snubber for repetitive inductive switching. Verify VGS does not exceed the maximum rating of +/-20V; use a gate-drive Zener clamp if transients are possible. The exposed tab is electrically connected to the drain - ensure adequate clearance from low-voltage signal traces.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Industrial grade, not AEC-Q100 qualified. Lead-free reflow-compatible per JEDEC J-STD-020.
