BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon
MPN: BSS214NH6327XTSA1 ✓ فعالBSS214NH6327XTSA1 جائزہ
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where a positive gate-source voltage creates an n-type conduction channel between drain and source. As a small-signal MOSFET in the broader discrete-semiconductor hierarchy, it sits under power MOSFETs, which themselves are a sub-category of discrete transistors. Low-threshold, logic-level variants like the BSS214N are designed to be driven directly from 3.3 V or 5 V microcontroller GPIO pins without a separate gate driver stage.
The key features include a logic-level gate threshold (VGS(th) in the sub-2 V range), 250 mOhm maximum RDS(on) at 4.5 V VGS, low gate charge enabling fast switching transitions, and an integrated ESD protection diode on the gate. The 20 V VDS rating makes it suitable for low-voltage bus switching such as USB (5 V), 12 V battery systems, and point-of-load rails below 15 V. The OptiMOS 2 technology provides a favorable FOM (RDS(on) x Qg) for its class.
Architecturally, the BSS214N uses Infineon's planar OptiMOS 2 cell design, which reduces gate charge and conduction loss relative to older TrenchMOS generations. The SOT-23 package's exposed lead frame allows modest thermal dissipation to copper pads, supporting up to 500 mW continuous dissipation on a standard 1 oz JEDEC EIA/JESD51 FR4 test board.
Typical applications include load switching in USB ports, battery management systems, power-rail multiplexing, DC-DC converter synchronous-rectifier low-side switches, and motor-driver low-side stages in small fans or pumps. Automotive body electronics and industrial sensor interfaces also benefit from the AEC-Q101 qualification.
When designing with this part, observe the SOA derating for pulsed currents above 1.5 A and ensure that the VGS drive voltage does not exceed the maximum rating. The SOT-23 footprint requires thermal copper-pad design to sustain continuous 500 mW; thermal vias under the drain pad are recommended.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل BSS214NH6327XTSA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSS214NH6327XTSA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Drain-Source Voltage (VDS), Technology, Operating Temperature Range, Continuous Drain Current (ID).
BSS214NWH6327
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSS214NH6327
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSS308PEH6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSS816NWH6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSS806NH6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2N7002H6327XTSA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSS214NH6327XTSA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID) | 1.5 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) |
| Technology | OptiMOS 2 (planar N-channel) |
| پیکیج | SOT-23 (PG-SOT23), 3 pins |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (junction) |
| Qualification | AEC-Q101 (Automotive) |
| Lead Finish | Pb-free lead plating (matte tin) |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 (per JEDEC J-STD-020) |
| ESD Protection | Yes (gate ESD diode) |
BSS214NH6327XTSA1 پن کنفیگریشن
| پن 1 | GATE — Gate input - logic-level drive, 3.3V or 5V compatible |
| پن 2 | SOURCE — Source - typically connected to GND for low-side switching |
| پن 3 | DRAIN — Drain - load connection; tab/lead-3 also connects to drain for thermal dissipation |
محفوظ آپریٹنگ ایریا (DC, Ta=25C)
عام استعمالات
BSS214NH6327XTSA1 کے لیے موزوں ہے 6 ایپلیکیشنs: USB VBUS Load Switch, Battery Management Load Disconnect, LED Driver Low-Side Switch, DC-DC Converter Synchronous Rectifier, Automotive Body Electronics Relay Replacement, Industrial Sensor Power Multiplexing.
USB VBUS Load Switch
The BSS214NH6327XTSA1 fits USB VBUS load switching because its 20 V VDS comfortably exceeds the 5 V USB rail, and the 1.5 A continuous current covers USB 2.0/3.0 downstream port requirements. Its 250 mOhm RDS(on) at 4.5 V VGS produces only ~38 mW loss at 0.5 A, well below the 500 mW package limit. Place the FET between the 5 V supply and the connector with a 100 kOhm gate pull-down to define the off-state; a 10 kOhm series gate resistor controls the 1-2 ns rise time. Unlike a P-channel MOSFET, no charge pump is required - the logic-level gate drives directly from a 3.3 V or 5 V GPIO. AEC-Q101 qualification suits automotive USB chargers and infotainment ports.
تجویز کردہ
Battery Management Load Disconnect
In single-cell Li-ion battery management, the BSS214NH6327XTSA1 serves as a low-side load disconnect switch because its 20 V VDS is well above the 4.2 V maximum battery voltage, and the 1.5 A rating covers typical handheld load profiles. The 250 mOhm RDS(on) limits full-load conduction loss to about 0.56 W at 1.5 A - usable within the SOT-23's 500 mW thermal limit only with a small drain copper pour. Drive the gate from the battery management MCU's GPIO at 3.3 V; the logic-level threshold ensures full enhancement. AEC-Q101 makes the part attractive for e-bike BMS and 12 V automotive accessory circuits, where wide operating temperature and reliability margin are required.
تجویز کردہ
LED Driver Low-Side Switch
The BSS214NH6327XTSA1 works as a low-side PWM driver for LED strings up to 1.5 A per channel, where its fast switching transitions and low gate charge minimize driver-stage losses. With VGS driven at 5 V from a logic-level timer IC, the FET achieves 250 mOhm RDS(on) and supports PWM dimming frequencies to 20 kHz without significant switching loss. Place a 10 kOhm gate resistor to limit ringing, and use the drain copper pour as the heatsink - 1 oz copper gives roughly 250 C/W junction-to-ambient thermal resistance. AEC-Q101 qualification allows under-hood automotive lighting and brake-light driver designs where temperature swings exceed consumer-grade requirements.
تجویز کردہ
DC-DC Converter Synchronous Rectifier
In low-power buck converters below 1.5 A, the BSS214NH6327XTSA1 acts as a low-side synchronous rectifier, where its low gate charge and 250 mOhm RDS(on) minimize body-diode conduction loss during the dead-time interval. Operate it at switching frequencies up to 500 kHz; above that the gate charge (~1-2 nC typical) starts to dominate driver losses. Pair with a complementary P-channel high-side switch or a dedicated controller such as a TPS54360; drive the gate through a 4.7 kOhm resistor to control dV/dt. The 20 V VDS rating is suitable for 5 V and 12 V input rails but should not be used above 15 V continuous to stay within SOA.
تجویز کردہ
Automotive Body Electronics Relay Replacement
The BSS214NH6327XTSA1 replaces small automotive relays in body-electronics applications such as seat heaters, mirror heaters, and interior lighting because it provides silent, bounce-free switching with no moving parts. Its 1.5 A continuous and 20 V ratings handle typical 12 V body loads up to ~18 W per channel. The AEC-Q101 qualification and -55C to +150C operating range exceed the under-hood and cabin temperature extremes. Drive the gate from a BCM (body control module) low-side driver output at 5 V; no flyback diode is needed for resistive loads, though an inductive load requires an external freewheel diode. Compared to a 12 V automotive relay, this MOSFET solution saves PCB area and eliminates audible click noise.
تجویز کردہ
Industrial Sensor Power Multiplexing
Industrial sensor systems often power-multiplex multiple sensors onto a single ADC channel to reduce wire count and ADC cost; the BSS214NH6327XTSA1 serves this role as a low-side multiplexer switch because of its low on-resistance (250 mOhm) and fast switching. Its 20 V VDS easily handles 24 V industrial supply rails derated for switching transients. The 1.5 A current rating supports even power-hungry sensors such as 4-20 mA loop-powered transmitters at full scale. The logic-level gate threshold allows direct drive from a 3.3 V microcontroller or FPGA without a level shifter. Place a small RC snubber (100 ohm + 1 nF) across drain-source if the load has significant inductance.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSS214NH6327XTSA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSS214NWH6327 | BSS214NH6327 | BSS308PEH6327XTSA1 | BSS816NWH6327XTSA1 | BSS806NH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|---|---|---|---|---|
| Package | SOT-23-3 (PG-SOT23) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Polarity | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 20 V | 20 V | 20 V | 30 V | 20 V | 20 V | 60 V |
| Continuous Drain Current (ID) | 1.5 A | 1.5 A | 1.5 A | 2 A | 1.4 A | 2.3 A | 0.2 A |
| RDS(on) max at 4.5V VGS | 250 mOhm | 250 mOhm | 250 mOhm | 150 mOhm (P-ch) | 180 mOhm | 70 mOhm | 5 Ohm (at 10V) |
| Power Dissipation | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW | 500 mW | 360 mW |
| AEC-Q101 Qualification | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (qty 1000) | $0.12 | $0.13 | $0.13 | $0.18 | $0.14 | $0.22 | $0.03 |
اہم امتیازی خصوصیات
- Higher continuous current than 2N7002 family in same footprint (بمقابلہ2N7002H6327XTSA2)
- Lower RDS(on) than comparable N-channel SOT-23 parts (بمقابلہBSS816NWH6327XTSA1)
- Automotive-grade qualification with broad distributor availability (بمقابلہBSS806NH6327XTSA1)
ڈیزائن نوٹس
Estimated: at ID = 1.5 A and RDS(on) = 250 mOhm, conduction loss is P = I^2 x R = 1.5^2 x 0.25 = 0.56 W. The SOT-23 package has a typical theta_JA of ~250 C/W on a JEDEC EIA/JESD51 1 oz FR4 board, producing a junction temperature rise of 0.56 x 250 = 140 C above ambient - this exceeds the 150 C Tj limit at 25 C ambient. Either reduce continuous current to ~1.0 A, or enlarge the drain-pad copper pour (4 cm^2 or larger) to lower theta_JA to ~150 C/W. For pulsed loads, calculate transient thermal impedance from the datasheet's Z(th) curves.
The SOT-23-3 drain pad (lead 3) doubles as the primary thermal dissipation path. Use a minimum 4 mm^2 copper pour connected to lead 3 on the top layer, plus an array of 4-9 thermal vias (0.3 mm drill, 0.5 mm pad) to a bottom-layer copper plane. Keep the source and gate copper minimal to reduce parasitic source inductance which can cause gate-oscillation during fast switching. Place the gate resistor (typically 4.7-10 kOhm) within 3 mm of the gate pin to dampen the gate-source loop.
Avoid driving the gate above the maximum VGS rating of ±20 V (or per datasheet value); ESD events on long gate traces can punch through the thin gate oxide. Add a 10 kOhm pull-down on the gate to ensure the FET stays off during MCU reset. Do not assume the BSS214N is pin-compatible with all 3-pin SOT-23 parts - some competitors (and even some 2N7002 clones) use a gate-drain-source pin order rather than the gate-source-drain order used here; always verify the mechanical drawing before PCB layout.
For switching applications above 100 kHz, keep the high-current drain-source loop area as small as possible to minimize parasitic inductance that causes voltage ringing and potential VDS over-voltage. Place input bypass capacitors (typically 100 nF ceramic) within 2 mm of the drain and source pins. If the BSS214N switches an inductive load (relay coil, motor, solenoid), add a freewheel diode across the load - the FET's body diode is too slow and has high forward voltage for inductive kickback protection above 100 mA.
تعمیل کی معلومات
AEC-Q101 qualified (the automotive-standard for discrete semiconductors, distinct from AEC-Q100 which targets ICs). RoHS compliant per Infineon product page. Pb-free matte-tin lead finish. Halogen-free per Infineon declaration. MSL Level 1 per JEDEC J-STD-020.
