BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
MPN: BSS806NH6327XTSA1 ✓ فعالBSS806NH6327XTSA1 جائزہ
A small-signal N-channel MOSFET in SOT-23 belongs to the discrete semiconductor family tree: MOSFET -> FET -> transistor -> discrete semiconductor. Within that taxonomy the OptiMOS™ 2 line is Infineon's 20 V-class trench-generation platform that replaced the older OptiMOS™ generation with lower gate charge, lower RDS(on), and tighter logic-level drive thresholds. This device is rated "ultra-logic level" (1.8 V Vgs(th) rated), which means a 1.8 V GPIO from a microcontroller, a coin-cell cell, or a small PMIC can drive the gate directly without a charge pump or level shifter.
Key features include a 20 V drain-source breakdown, 2.3 A continuous ID (Ta), 57 mΩ maximum RDS(on) at VGS=4.5 V, ultra-low gate charge (typical Qg ≈ 2.5 nC for this generation), and an avalanche-rated body diode qualified to AEC-Q101 for automotive use. The PG-SOT23 footprint uses a center pin 2 that is internally bonded to the die pad, giving designers a low-inductance source return when the center pad is soldered to a small copper pour.
Typical applications include DC-DC converter synchronous rectifiers, USB load switches, battery protection circuits, motor driver low-side switches, and LED backlight drivers. Because the part is AEC-Q101 qualified, it is also suitable for 12 V automotive body-electronics loads such as door modules and small sensor switches.
When designing with this device, gate-drive strength matters: a 1 kΩ gate resistor with a 10 kΩ pull-down keeps the FET off during MCU reset. For switching-converter use, keep the switching-node loop (Drain -> L -> Drain) under 5 mm to control ringing on the 20 V rating headroom.
کے لیے ڈراپ اِن متبادل BSS806NH6327XTSA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSS806NH6327XTSA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Continuous Drain Current (ID).
BSS806NEH6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSS816NWH6327XTSA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTR4101PT1G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
Si2302CDS-T1-GE3
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
DMG2302UX-7
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSS806NH6327XTSA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | OptiMOS 2 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID, Ta) | 2.3 A |
| Drain-Source On-Resistance (RDS(on) max) | 57 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 1.8 V rated (logic level) |
| Gate Drive (recommended VGS) | 1.8 V to 10 V |
| Power Dissipation (PD, Ta) | 500 mW |
| آپریٹنگ درجہ حرارت رینج | -55 C to +150 C (junction) |
| پیکیج | PG-SOT23-3 (SOT-23-3) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 1 (per JEDEC J-STD-020) |
| RoHS اسٹیٹس | Compliant (Pb-free plating) |
| Automotive Qualification | AEC-Q101 qualified |
BSS806NH6327XTSA1 پن کنفیگریشن
| پن 1 | Gate (G) — Gate drive input; logic-level, 1.8 V VGS(th) rated |
| پن 2 | Source (S) — Source connection; internally bonded to the die pad for thermal dissipation |
| پن 3 | Drain (D) — Drain connection; load switching node |
محفوظ آپریٹنگ ایریا (DC, TA=25C)
عام استعمالات
BSS806NH6327XTSA1 کے لیے موزوں ہے 6 ایپلیکیشنs: USB VBUS Load Switch, DC-DC Synchronous Rectifier, Single-Cell Li-Ion Battery Protection, Automotive 12V Body Electronics Load Driver, LED Backlight / Camera Flash Driver Switch, Low-Side Solenoid / Relay Driver.
USB VBUS Load Switch
The BSS806NH6327XTSA1 fits USB VBUS load-switch positions because its 20 V VDS comfortably exceeds the 5 V USB rail with hot-plug transient headroom, while the 57 mΩ RDS(on) at VGS=4.5 V limits continuous dissipation to about 0.17 W at a USB 3.0 worst-case 1.7 A load. The 1.8 V logic-level VGS(th) means a 3.3 V GPIO can drive the gate directly, removing the need for a charge pump. Used between the 5 V regulator output and the USB connector VBUS pin with a 100 kΩ gate pull-down so the load defaults OFF during MCU reset, the BSS806N adds clean, low-loss power gating without the BOM cost of a dedicated load-switch IC. Compared with the legacy 2N7002, the BSS806N cuts conduction loss by more than 100x in this position.
تجویز کردہ
DC-DC Synchronous Rectifier
The BSS806NH6327XTSA1 is well matched to the low-side synchronous rectifier position in 5 V to 3.3 V buck converters up to about 2 A. Its 20 V VDS handles 5 V input plus switching spike headroom, and the 57 mΩ RDS(on) at 4.5 V gate keeps synchronous-rectifier conduction loss below 0.23 W at 2 A - small enough that the SOT-23 package stays within its 500 mW rating on 1 oz copper with a small thermal via array. The low gate charge of the OptiMOS 2 die (typical Qg ≈ 2.5 nC for this generation) keeps switching losses low at 500 kHz, allowing >90% efficiency in single-cell Li-ion buck designs. Tie the gate to the controller's low-side drive output through a 10 Ω resistor to control ringing.
تجویز کردہ
Single-Cell Li-Ion Battery Protection
The BSS806NH6327XTSA1 suits the low-side FET position in 1-cell Li-ion battery protection circuits where a 20 V VDS rating is more than enough headroom for a 4.2 V full-charge pack. The 2.3 A continuous ID rating handles typical smartphone and IoT discharge currents (up to 1.5 A sustained), while the 57 mΩ RDS(on) keeps voltage drop below 90 mV at 1.5 A. The AEC-Q101 qualification supports designs that must survive automotive-grade reliability stress. Place two BSS806N FETs back-to-back (one in the charge path, one in the discharge path) for a classic two-FET protection topology with minimal conduction loss.
تجویز کردہ
Automotive 12V Body Electronics Load Driver
AEC-Q101 automotive qualification makes the BSS806NH6327XTSA1 a fit for 12 V automotive body-electronics loads - door modules, seat controllers, mirror adjusters, and small sensor switches. Its 20 V VDS handles the 12 V bus plus load-dump transients up to about 16 V (with external TVS protection), and the 57 mΩ RDS(on) at 4.5 V gate keeps dissipation under 0.6 W at a 3 A peak body-load pulse. Pair the BSS806N with a small MCU GPIO through a 1 kΩ gate resistor; the logic-level 1.8 V threshold ensures clean turn-on from 3.3 V microcontrollers. For wiper or seat motors above 3 A continuous, choose a larger package such as DPAK instead.
تجویز کردہ
LED Backlight / Camera Flash Driver Switch
The BSS806NH6327XTSA1 serves well as the low-side PWM switch in LED backlight drivers and small camera-flash circuits. Its 57 mΩ RDS(on) at 4.5 V gate keeps the on-state voltage drop below 100 mV at 1.5 A LED current, so most of the supply voltage reaches the LED string for maximum brightness. The 1.8 V logic-level threshold means a 3.3 V PWM GPIO can switch the gate directly at audio and visual refresh rates without a driver stage. At 20 V VDS, the part handles LED stacks up to 4 white LEDs in series from a 12 V rail with comfortable headroom for inductor flyback transients.
تجویز کردہ
Low-Side Solenoid / Relay Driver
The BSS806NH6327XTSA1 fits low-side solenoid and small relay driver positions in industrial control and white-goods designs. Its 2.3 A continuous drain current handles small 12 V/24 V relays and proportional solenoids below 2 A, and the 20 V VDS provides solid transient headroom for the flyback spike when the inductor de-energizes (paired with a flyback diode). The logic-level 1.8 V VGS(th) lets a 3.3 V or 5 V MCU GPIO drive the gate directly, eliminating the need for a discrete bipolar driver stage. For inductive kickback protection, place a 1N4148 or Schottky diode across the coil and keep the diode loop tight to the drain pin.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSS806NH6327XTSA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSS806NEH6327XTSA1 | BSS816NWH6327XTSA1 | NTR4101PT1G | Si2302CDS-T1-GE3 | DMG2302UX-7 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | onsemi | Vishay Intertechnology | Diodes Incorporated |
| Package | PG-SOT23-3 | PG-SOT23-3 (same) | PG-SOT23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) |
| VDS (V) | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| Continuous ID (A) | 2.3 A | 2.3 A | 2.6 A | 2.6 A | 2.6 A | 2.4 A |
| RDS(on) max @ 4.5V (mΩ) | 57 mΩ | 57 mΩ | ~40 mΩ | ~50 mΩ | ~52 mΩ | ~63 mΩ |
| VGS(th) logic-level | 1.8 V rated | 1.8 V rated | 1.8 V rated | 1.5 V rated | 1.5 V rated | 1.5 V rated |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | No |
| PD (mW @ TA=25C) | 500 mW | 500 mW | 500 mW | 480 mW | 500 mW | 780 mW |
اہم امتیازی خصوصیات
- Lower on-resistance per dollar than legacy 2N7002 (بمقابلہON Semiconductor 2N7002)
- AEC-Q101 automotive qualification in same SOT-23 package (بمقابلہDMG2302UX-7 (Diodes Incorporated))
- Same-family upgrade path within the same footprint (بمقابلہBSS816NWH6327XTSA1)
ڈیزائن نوٹس
Estimated: at TA=25 C, ID=1.5 A continuous, and RDS(on)=57 mΩ, conduction dissipation is roughly 0.13 W. The PG-SOT23-3 package has a typical theta_JA around 250 C/W on a 1 oz FR-4 board without thermal vias, which yields a junction-temperature rise of about 32 C above ambient - well within the 150 C junction limit. For designs pushing 2 A continuous, add an array of 4-6 thermal vias under the center source pin (pin 2) to drop theta_JA toward 180 C/W and keep Tj rise below 50 C. Always derate to a maximum junction of 125 C for AEC-Q101 automotive designs, not the absolute 150 C rating.
Keep the high-current drain loop (Drain -> load -> Source) area under 5 mm² to minimize parasitic inductance that couples ringing into the 20 V VDS rating. Place a 100 kΩ gate-source pull-down resistor within 2 mm of the gate pin to ensure the FET stays OFF during MCU reset or floating-GP conditions. For switching applications above 100 kHz, route the gate drive trace away from the drain node and add a 10 Ω series gate resistor to dampen ringing. The center pin (Pin 2) is the source and is internally bonded to the die pad - always solder this pin to a copper pour for lowest thermal resistance.
Do not exceed 20 V VDS - even transient load-dump spikes on 12 V automotive rails can exceed 20 V without TVS clamping, so add an SMBJ16A or similar transient suppressor for 12 V bus designs. The 1.8 V logic-level VGS(th) means a 1.8 V GPIO is at the very edge of guaranteed turn-on; for production margin, drive the gate to at least 2.5 V. Avoid daisy-chaining multiple BSS806N FETs in parallel without individual gate resistors - the positive temperature coefficient of RDS(on) helps thermal stability, but unmatched gate thresholds can cause current hogging above 1 A per device.
تعمیل کی معلومات
RoHS compliant with Pb-free lead plating per Infineon datasheet. AEC-Q101 qualified for automotive applications per Infineon OptiMOS 2 datasheet family. Halogen-free per JEDEC JS709B declaration. Note: AEC-Q101 (automotive discrete) is the correct qualification standard for this MOSFET, not AEC-Q100 (automotive IC).
