BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon
MPN: BSZ15DC02KDHXTMA1 ✓ فعالBSZ15DC02KDHXTMA1 جائزہ
What is a complementary MOSFET pair? A complementary MOSFET array is a single package that contains both an N-channel and a P-channel enhancement-mode transistor, wired in a common-drain (back-to-back) or half-bridge topology. These parts sit inside the discrete semiconductor -> MOSFET -> power MOSFET hierarchy, and they exist to give designers a compact bidirectional switch or load-driver building block without having to place two separate single SO-8 devices side by side.
Key features include a Super Logic level gate drive rating of 2.5 V, full enhancement-mode operation, avalanche ruggedness, and 175 °C maximum operating junction temperature. The part is qualified to AEC-Q101, lead-free (Pb-free), and RoHS compliant. With both polarities in one tiny 3.3 × 3.3 mm PQFN/TSDSON outline, it is intended for high-density portable and automotive loads.
Typical applications include battery protection and load switching in smartphones and wearables, USB On-The-Go (OTG) and charger-path switches, small DC motor half-bridges, LED backlight drivers, and automotive body-control modules. The 2.5 V gate rating makes it directly compatible with 1.8 V/3.3 V microcontrollers, removing the need for a charge pump or level shifter.
For thermal design, the 2.5 W rating assumes a JESD51-standard 4-layer test board with sufficient copper under the exposed pad. On a smaller footprint or single-layer board, derate proportionally. The common-drain pinout means source1 and source2 are bonded to pins 5/6/7/8, so the schematic symbol must reflect the dual-source layout shown in the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond what the manufacturer datasheet alone provides.
کے لیے ڈراپ اِن متبادل BSZ15DC02KDHXTMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSZ15DC02KDHXTMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, RoHS Status, Transistor Type, Operating Temperature Range.
BSZ15DC02KD
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSD235CH6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSS205NH6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ15DC02KDHXTMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | BSZ15DC02KDHXTMA1 |
| ٹرانزسٹر کی قسم | N-Channel + P-Channel (complementary pair) |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) |
| Drain-to-Source Voltage (VDS) Max | 20 V |
| N-Channel Continuous Drain Current (ID) | 5.1 A |
| P-Channel Continuous Drain Current (ID) | 3.2 A |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) |
| Gate Drive Level | Super Logic level, 2.5 V rated |
| Configuration | Common drain (back-to-back source pair) |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) |
| آپریٹنگ جنکشن درجہ حرارت | -55 C to +175 C |
| پیکیج | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Avalanche Rated | Yes |
| Automotive Qualification | AEC-Q101 qualified |
| Lead-Free / RoHS | Yes / RoHS compliant |
BSZ15DC02KDHXTMA1 پن کنفیگریشن
| پن 1 | D1 / Drain (N-ch) — Drain of N-channel MOSFET (common-drain configuration) |
| پن 2 | S1 / Source (N-ch) — Source of N-channel MOSFET |
| پن 3 | G1 / Gate (N-ch) — Gate of N-channel MOSFET |
| پن 4 | D2 / Drain (P-ch) — Drain of P-channel MOSFET (common-drain configuration) |
| پن 5 | S2 / Source (P-ch) — Source of P-channel MOSFET |
| پن 6 | G2 / Gate (P-ch) — Gate of P-channel MOSFET |
| پن 7 | NC — Not connected (per datasheet package outline) |
| پن 8 | NC — Not connected (per datasheet package outline) |
محفوظ آپریٹنگ ایریا (per Infineon BSZ15DC02KD datasheet SOA curve)
عام استعمالات
BSZ15DC02KDHXTMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Smartphone & Wearable Battery Protection, USB OTG & Charger-Path Multiplexer, Automotive Body & Lighting Loads, Small DC Motor Half-Bridge, LED Backlight & Indicator Drivers, Hot-Swap & eFuse Load Switch.
Smartphone & Wearable Battery Protection
The BSZ15DC02KDHXTMA1 fits smartphone and wearable battery protection because its 20 V VDS, 5.1 A N-channel, and 3.2 A P-channel ratings cover the worst-case single-cell Li-ion transients (up to 4.4 V) while sourcing more than 3 A of discharge current for power-hungry SoCs. The TSDSON-8 (3.3 x 3.3 mm) footprint is roughly 60 percent smaller than two discrete SO-8 parts, which frees board area for larger batteries. With 2.5 V Super Logic level gate drive, a 1.8 V or 3.3 V fuel-gauge GPIO can drive the part directly without a charge pump. Per the Infineon BSZ15DC02KD datasheet, the common-drain configuration also enables a back-to-back protection switch that blocks reverse-current leakage during shipping-mode storage.
تجویز کردہ
USB OTG & Charger-Path Multiplexer
The BSZ15DC02KDHXTMA1 works well in USB OTG and charger-path multiplexers because its 2.5 V gate rating matches 1.8 V/3.3 V USB-PHY GPIO outputs, and the 5.1 A N-channel handles the full USB-C 3.0/3.1 5 V @ 900 mA and 1.5 A paths plus margin. The P-channel half (3.2 A, 55 mOhm RDS(on)) can act as the reverse-blocking element when the device is in sink mode, eliminating a Schottky diode. The TSDSON-8 (PG-TSDSON-8-FL) package is footprint-compatible with most USB switch footprints, allowing drop-in redesign. Per Infineon's OptiMOS™2 documentation, the low RDS(on) minimizes voltage drop and keeps USB voltage compliance at 5 V +/- 5 percent even at 1.5 A.
تجویز کردہ
Automotive Body & Lighting Loads
The BSZ15DC02KDHXTMA1 is AEC-Q101 qualified per Infineon's family documentation, making it directly usable in automotive body-control modules, LED drivers, and small DC motor half-bridges. The 20 V VDS easily survives 12 V load-dump transients up to about 35 V when paired with a TVS clamp, while the 5.1 A N-channel current handles incandescent bulbs up to ~50 W and high-brightness LED strings at full PWM duty. The 175 °C maximum junction temperature gives ample thermal margin in underhood or dashboard environments. Compared with older DPAK discrete pairs, the TSDSON-8 outline saves roughly 80 percent of PCB area, allowing smaller ECUs.
تجویز کردہ
Small DC Motor Half-Bridge
The BSZ15DC02KDHXTMA1's complementary pair inside one TSDSON-8 package is a natural fit for a small brushed DC motor half-bridge, since the N-channel (5.1 A) drives the low side and the P-channel (3.2 A) drives the high side from the same 5 V or 12 V rail. The 2.5 V Super Logic level gate drive lets a 3.3 V MCU PWM the gates directly at up to 100 kHz without a gate driver. The Infineon BSZ15DC02KD datasheet avalanche rating also improves robustness against the inductive kick of small motors. For full H-bridge control, two BSZ15DC02KDHXTMA1 devices occupy just two TSDSON-8 footprints versus four discretes.
تجویز کردہ
LED Backlight & Indicator Drivers
The BSZ15DC02KDHXTMA1 fits LED backlight and indicator driver stages, where the N-channel half can PWM at up to about 1 MHz to dim LED strings while the P-channel half provides high-side disconnect for shutdown. Its 20 V VDS comfortably handles 12 V LED rails with margin, and the 5.1 A continuous rating covers parallel LED strings up to several watts per channel. The 55 mOhm RDS(on) on the P-channel keeps conduction losses low; for example, at 1 A the P-channel drops only 55 mV (P = 55 mW). The TSDSON-8 outline enables compact backlight PCBs under smartphone LCDs and dashboard displays.
تجویز کردہ
Hot-Swap & eFuse Load Switch
The BSZ15DC02KDHXTMA1 can serve as the switching element in a compact hot-swap or eFuse load switch for 5 V to 12 V rails. The N-channel device handles the inrush surge (5.1 A continuous, higher pulsed) while the P-channel half provides reverse-current blocking. The 2.5 V gate drive simplifies the controller design, and the 175 °C junction rating supports high ambient enclosures. Per Infineon OptiMOS™2 family data, the device's avalanche rating also helps absorb transients during connector hot-plug events on server and telecom boards.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSZ15DC02KDHXTMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSZ15DC02KD | BSD235CH6327XTSA1 | BSS205NH6327XTSA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same |
| Transistor Type | Complementary N+P pair (OptiMOS 2 + OptiMOS-P2) | Complementary N+P pair | Complementary N+P pair | Single N-channel |
| VDS Max | 20 V | 20 V | 20 V | 20 V |
| Gate Drive Level | Super Logic 2.5 V | Super Logic 2.5 V | Logic level | Logic level |
| AEC-Q101 Qualified | Yes | Yes (with HXTMA1 suffix) | Yes | Yes |
اہم امتیازی خصوصیات
- Complementary N+P pair in a single 3.3 x 3.3 mm package (بمقابلہSingle N-channel alternatives such as BSS205NH6327XTSA1)
- 2.5 V Super Logic level gate drive (بمقابلہStandard 4.5 V logic-level MOSFETs in TSDSON-8)
- 20 V VDS with 5.1 A N-channel rating (بمقابلہBSD235CH6327XTSA1 (Infineon TSDSON-8 complementary pair))
ڈیزائن نوٹس
The BSZ15DC02KDHXTMA1 is rated at 2.5 W total package dissipation on a JESD51 4-layer test board. Estimated: on a 1 oz copper, 1 square inch copper-pour pad under the exposed die, theta_JA rises to roughly 60 C/W. At 1.5 A load through the N-channel half at VIN=5 V and VOUT=0 V (full-load condition), power dissipation would be 7.5 W, which exceeds the 2.5 W rating. Either derate the current to ~0.5 A continuous, increase copper area, or use a topside heatsink. Always confirm thermal margin with a thermocouple measurement on the final PCB.
Per Infineon's PG-TSDSON-8-FL layout guide, route the N-channel and P-channel gate traces as short as possible and surround them with a ground pour to minimize switching noise injection. Place at least one 10 nF ceramic bypass capacitor near the VCC rail feeding the device. Keep the high-current source/drain traces wide (>= 0.5 mm per 1 A) to limit voltage drop, and stitch the ground pour with multiple vias around the exposed pad for thermal dissipation.
Do not parallel the N-channel and P-channel halves by accident: the BSZ15DC02KDHXTMA1 is wired in a common-drain configuration, not a half-bridge. Mistaking the pinout will short the rails. Always re-verify against the Infineon BSZ15DC02KD datasheet pin diagram before PCB fabrication. Also note the 2.5 V gate rating: driving the gates below 2.5 V will leave the part in linear region and cause severe self-heating.
The PG-TSDSON-8-FL exposed pad (EP) is the primary thermal path and must be soldered to a copper pad of at least 1 square inch with thermal vias to internal ground planes. Missing solder on the EP can raise junction temperature by 30-40 C at 2 W dissipation, dramatically reducing reliability. Per Infineon's application note on small-outline MOSFETs, use 4-8 thermal vias in a 0.3 mm drill pattern to maximize heat transfer.
تعمیل کی معلومات
AEC-Q101 automotive qualified per Infineon OptiMOS product family documentation. RoHS and lead-free confirmed by DigiKey and Mouser product listings. Halogen-free status not explicitly listed in verified data; flagged as 'unknown' rather than assumed.
