BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon
MPN: BSZ15DC02KDHXTMA1 ✓ Hoạt độngBSZ15DC02KDHXTMA1 Tóm tắt
What is a complementary MOSFET pair? A complementary MOSFET array is a single package that contains both an N-channel and a P-channel enhancement-mode transistor, wired in a common-drain (back-to-back) or half-bridge topology. These parts sit inside the discrete semiconductor -> MOSFET -> power MOSFET hierarchy, and they exist to give designers a compact bidirectional switch or load-driver building block without having to place two separate single SO-8 devices side by side.
Key features include a Super Logic level gate drive rating of 2.5 V, full enhancement-mode operation, avalanche ruggedness, and 175 °C maximum operating junction temperature. The part is qualified to AEC-Q101, lead-free (Pb-free), and RoHS compliant. With both polarities in one tiny 3.3 × 3.3 mm PQFN/TSDSON outline, it is intended for high-density portable and automotive loads.
Typical applications include battery protection and load switching in smartphones and wearables, USB On-The-Go (OTG) and charger-path switches, small DC motor half-bridges, LED backlight drivers, and automotive body-control modules. The 2.5 V gate rating makes it directly compatible with 1.8 V/3.3 V microcontrollers, removing the need for a charge pump or level shifter.
For thermal design, the 2.5 W rating assumes a JESD51-standard 4-layer test board with sufficient copper under the exposed pad. On a smaller footprint or single-layer board, derate proportionally. The common-drain pinout means source1 and source2 are bonded to pins 5/6/7/8, so the schematic symbol must reflect the dual-source layout shown in the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond what the manufacturer datasheet alone provides.
Bộ thay thế dễ dàng lắp đặt cho BSZ15DC02KDHXTMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSZ15DC02KDHXTMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, RoHS Status, Transistor Type, Operating Temperature Range.
BSZ15DC02KD
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSD235CH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSS205NH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ15DC02KDHXTMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSZ15DC02KDHXTMA1 |
| Kiểu transitor | N-Channel + P-Channel (complementary pair) |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) |
| Drain-to-Source Voltage (VDS) Max | 20 V |
| N-Channel Continuous Drain Current (ID) | 5.1 A |
| P-Channel Continuous Drain Current (ID) | 3.2 A |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) |
| Gate Drive Level | Super Logic level, 2.5 V rated |
| Configuration | Common drain (back-to-back source pair) |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) |
| Nhiệt độ mối nối hoạt động | -55 C to +175 C |
| Hộp | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) |
| Kiểu lắp đặt | Surface Mount |
| Avalanche Rated | Yes |
| Automotive Qualification | AEC-Q101 qualified |
| Lead-Free / RoHS | Yes / RoHS compliant |
Cấu hình chân BSZ15DC02KDHXTMA1
| Chân 1 | D1 / Drain (N-ch) — Drain of N-channel MOSFET (common-drain configuration) |
| Chân 2 | S1 / Source (N-ch) — Source of N-channel MOSFET |
| Chân 3 | G1 / Gate (N-ch) — Gate of N-channel MOSFET |
| Chân 4 | D2 / Drain (P-ch) — Drain of P-channel MOSFET (common-drain configuration) |
| Chân 5 | S2 / Source (P-ch) — Source of P-channel MOSFET |
| Chân 6 | G2 / Gate (P-ch) — Gate of P-channel MOSFET |
| Chân 7 | NC — Not connected (per datasheet package outline) |
| Chân 8 | NC — Not connected (per datasheet package outline) |
Khu vực hoạt động an toàn (per Infineon BSZ15DC02KD datasheet SOA curve)
Ứng dụng tiêu biểu
BSZ15DC02KDHXTMA1 phù hợp cho 6 Áp dụngs: Smartphone & Wearable Battery Protection, USB OTG & Charger-Path Multiplexer, Automotive Body & Lighting Loads, Small DC Motor Half-Bridge, LED Backlight & Indicator Drivers, Hot-Swap & eFuse Load Switch.
Smartphone & Wearable Battery Protection
The BSZ15DC02KDHXTMA1 fits smartphone and wearable battery protection because its 20 V VDS, 5.1 A N-channel, and 3.2 A P-channel ratings cover the worst-case single-cell Li-ion transients (up to 4.4 V) while sourcing more than 3 A of discharge current for power-hungry SoCs. The TSDSON-8 (3.3 x 3.3 mm) footprint is roughly 60 percent smaller than two discrete SO-8 parts, which frees board area for larger batteries. With 2.5 V Super Logic level gate drive, a 1.8 V or 3.3 V fuel-gauge GPIO can drive the part directly without a charge pump. Per the Infineon BSZ15DC02KD datasheet, the common-drain configuration also enables a back-to-back protection switch that blocks reverse-current leakage during shipping-mode storage.
Được đề xuất
USB OTG & Charger-Path Multiplexer
The BSZ15DC02KDHXTMA1 works well in USB OTG and charger-path multiplexers because its 2.5 V gate rating matches 1.8 V/3.3 V USB-PHY GPIO outputs, and the 5.1 A N-channel handles the full USB-C 3.0/3.1 5 V @ 900 mA and 1.5 A paths plus margin. The P-channel half (3.2 A, 55 mOhm RDS(on)) can act as the reverse-blocking element when the device is in sink mode, eliminating a Schottky diode. The TSDSON-8 (PG-TSDSON-8-FL) package is footprint-compatible with most USB switch footprints, allowing drop-in redesign. Per Infineon's OptiMOS™2 documentation, the low RDS(on) minimizes voltage drop and keeps USB voltage compliance at 5 V +/- 5 percent even at 1.5 A.
Được đề xuất
Automotive Body & Lighting Loads
The BSZ15DC02KDHXTMA1 is AEC-Q101 qualified per Infineon's family documentation, making it directly usable in automotive body-control modules, LED drivers, and small DC motor half-bridges. The 20 V VDS easily survives 12 V load-dump transients up to about 35 V when paired with a TVS clamp, while the 5.1 A N-channel current handles incandescent bulbs up to ~50 W and high-brightness LED strings at full PWM duty. The 175 °C maximum junction temperature gives ample thermal margin in underhood or dashboard environments. Compared with older DPAK discrete pairs, the TSDSON-8 outline saves roughly 80 percent of PCB area, allowing smaller ECUs.
Được đề xuất
Small DC Motor Half-Bridge
The BSZ15DC02KDHXTMA1's complementary pair inside one TSDSON-8 package is a natural fit for a small brushed DC motor half-bridge, since the N-channel (5.1 A) drives the low side and the P-channel (3.2 A) drives the high side from the same 5 V or 12 V rail. The 2.5 V Super Logic level gate drive lets a 3.3 V MCU PWM the gates directly at up to 100 kHz without a gate driver. The Infineon BSZ15DC02KD datasheet avalanche rating also improves robustness against the inductive kick of small motors. For full H-bridge control, two BSZ15DC02KDHXTMA1 devices occupy just two TSDSON-8 footprints versus four discretes.
Được đề xuất
LED Backlight & Indicator Drivers
The BSZ15DC02KDHXTMA1 fits LED backlight and indicator driver stages, where the N-channel half can PWM at up to about 1 MHz to dim LED strings while the P-channel half provides high-side disconnect for shutdown. Its 20 V VDS comfortably handles 12 V LED rails with margin, and the 5.1 A continuous rating covers parallel LED strings up to several watts per channel. The 55 mOhm RDS(on) on the P-channel keeps conduction losses low; for example, at 1 A the P-channel drops only 55 mV (P = 55 mW). The TSDSON-8 outline enables compact backlight PCBs under smartphone LCDs and dashboard displays.
Được đề xuất
Hot-Swap & eFuse Load Switch
The BSZ15DC02KDHXTMA1 can serve as the switching element in a compact hot-swap or eFuse load switch for 5 V to 12 V rails. The N-channel device handles the inrush surge (5.1 A continuous, higher pulsed) while the P-channel half provides reverse-current blocking. The 2.5 V gate drive simplifies the controller design, and the 175 °C junction rating supports high ambient enclosures. Per Infineon OptiMOS™2 family data, the device's avalanche rating also helps absorb transients during connector hot-plug events on server and telecom boards.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSZ15DC02KDHXTMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSZ15DC02KD | BSD235CH6327XTSA1 | BSS205NH6327XTSA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same |
| Transistor Type | Complementary N+P pair (OptiMOS 2 + OptiMOS-P2) | Complementary N+P pair | Complementary N+P pair | Single N-channel |
| VDS Max | 20 V | 20 V | 20 V | 20 V |
| Gate Drive Level | Super Logic 2.5 V | Super Logic 2.5 V | Logic level | Logic level |
| AEC-Q101 Qualified | Yes | Yes (with HXTMA1 suffix) | Yes | Yes |
Bảo phân biệt quan trọng
- Complementary N+P pair in a single 3.3 x 3.3 mm package (vsSingle N-channel alternatives such as BSS205NH6327XTSA1)
- 2.5 V Super Logic level gate drive (vsStandard 4.5 V logic-level MOSFETs in TSDSON-8)
- 20 V VDS with 5.1 A N-channel rating (vsBSD235CH6327XTSA1 (Infineon TSDSON-8 complementary pair))
Ghi chú thiết kế
The BSZ15DC02KDHXTMA1 is rated at 2.5 W total package dissipation on a JESD51 4-layer test board. Estimated: on a 1 oz copper, 1 square inch copper-pour pad under the exposed die, theta_JA rises to roughly 60 C/W. At 1.5 A load through the N-channel half at VIN=5 V and VOUT=0 V (full-load condition), power dissipation would be 7.5 W, which exceeds the 2.5 W rating. Either derate the current to ~0.5 A continuous, increase copper area, or use a topside heatsink. Always confirm thermal margin with a thermocouple measurement on the final PCB.
Per Infineon's PG-TSDSON-8-FL layout guide, route the N-channel and P-channel gate traces as short as possible and surround them with a ground pour to minimize switching noise injection. Place at least one 10 nF ceramic bypass capacitor near the VCC rail feeding the device. Keep the high-current source/drain traces wide (>= 0.5 mm per 1 A) to limit voltage drop, and stitch the ground pour with multiple vias around the exposed pad for thermal dissipation.
Do not parallel the N-channel and P-channel halves by accident: the BSZ15DC02KDHXTMA1 is wired in a common-drain configuration, not a half-bridge. Mistaking the pinout will short the rails. Always re-verify against the Infineon BSZ15DC02KD datasheet pin diagram before PCB fabrication. Also note the 2.5 V gate rating: driving the gates below 2.5 V will leave the part in linear region and cause severe self-heating.
The PG-TSDSON-8-FL exposed pad (EP) is the primary thermal path and must be soldered to a copper pad of at least 1 square inch with thermal vias to internal ground planes. Missing solder on the EP can raise junction temperature by 30-40 C at 2 W dissipation, dramatically reducing reliability. Per Infineon's application note on small-outline MOSFETs, use 4-8 thermal vias in a 0.3 mm drill pattern to maximize heat transfer.
Thông tin tuân thủ
AEC-Q101 automotive qualified per Infineon OptiMOS product family documentation. RoHS and lead-free confirmed by DigiKey and Mouser product listings. Halogen-free status not explicitly listed in verified data; flagged as 'unknown' rather than assumed.
