Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

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20 V Vdss 5.1 A Id [DATA_NEEDED: N-ch RDS(on) value in mohm] Rds(on) 2.5 W @ 25 C (per DigiKey listing) Package
From $0.74 USD / Unit
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Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.85 $1.85
10 $1.62 $16.20
100 $1.18 $118.00
500 $0.92 $460.00
1,000 $0.74 $740.00
ℹ️ All prices are in USD

Drop-in alternatives for BSZ15DC02KDHXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

BSZ15DC02KD

✅ Drop-In
📦 PG-TSDSON-8-FL
same die/package, base part number (no HXTMA1 tape/reel and AEC-Q101 suffix code); electrical specs identical

📋 Reference alternative (not in catalog)

BSD235CH6327XTSA1

✅ Drop-In
Infineon
📦 PG-TSDSON-8-FL
Infineon Technologies · OptiMOS™ · N+P complementary dual MOSFET · 20 V · 950 mA · 530 mA (negative polarity) · 500 mW · PG-SOT363-6-1 (SOT-363, 6-pin)

✓ In Stock

$0.12 / Unit

View Datasheet →

BSS205NH6327XTSA1

✅ Drop-In
Infineon
📦 PG-TSDSON-8-FL
Infineon Technologies · BSS205NH6327XTSA1 · N-Channel MOSFET · PG-SOT23 (SC-59, TO-236-3), 3-pin · Surface Mount · 20 V · 2.5 A · 500 mW

✓ In Stock

$0.12 / Unit

View Datasheet →

BSZ15DC02KDHXTMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Part Number BSZ15DC02KDHXTMA1
Transistor Type N-Channel + P-Channel (complementary pair)
Technology OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
Drain-to-Source Voltage (VDS) Max 20 V
N-Channel Continuous Drain Current (ID) 5.1 A
P-Channel Continuous Drain Current (ID) 3.2 A
P-Channel RDS(on) Max 55 mOhm (per Infineon part summary)
Gate Drive Level Super Logic level, 2.5 V rated
Configuration Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) 2.5 W @ 25 C (per DigiKey listing)
Operating Junction Temperature -55 C to +175 C
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Mounting Type Surface Mount
Avalanche Rated Yes
Automotive Qualification AEC-Q101 qualified
Lead-Free / RoHS Yes / RoHS compliant

BSZ15DC02KDHXTMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 D1 / Drain (N-ch) — Drain of N-channel MOSFET (common-drain configuration)
Pin 2 S1 / Source (N-ch) — Source of N-channel MOSFET
Pin 3 G1 / Gate (N-ch) — Gate of N-channel MOSFET
Pin 4 D2 / Drain (P-ch) — Drain of P-channel MOSFET (common-drain configuration)
Pin 5 S2 / Source (P-ch) — Source of P-channel MOSFET
Pin 6 G2 / Gate (P-ch) — Gate of P-channel MOSFET
Pin 7 NC — Not connected (per datasheet package outline)
Pin 8 NC — Not connected (per datasheet package outline)

Safe Operating Area (per Infineon BSZ15DC02KD datasheet SOA curve)

DC Continuous Operation

Typical Applications

BSZ15DC02KDHXTMA1 is suitable for 6 applications: Smartphone & Wearable Battery Protection, USB OTG & Charger-Path Multiplexer, Automotive Body & Lighting Loads, Small DC Motor Half-Bridge, LED Backlight & Indicator Drivers, Hot-Swap & eFuse Load Switch.

📱

Smartphone & Wearable Battery Protection

The BSZ15DC02KDHXTMA1 fits smartphone and wearable battery protection because its 20 V VDS, 5.1 A N-channel, and 3.2 A P-channel ratings cover the worst-case single-cell Li-ion transients (up to 4.4 V) while sourcing more than 3 A of discharge current for power-hungry SoCs. The TSDSON-8 (3.3 x 3.3 mm) footprint is roughly 60 percent smaller than two discrete SO-8 parts, which frees board area for larger batteries. With 2.5 V Super Logic level gate drive, a 1.8 V or 3.3 V fuel-gauge GPIO can drive the part directly without a charge pump. Per the Infineon BSZ15DC02KD datasheet, the common-drain configuration also enables a back-to-back protection switch that blocks reverse-current leakage during shipping-mode storage.

🔧

USB OTG & Charger-Path Multiplexer

The BSZ15DC02KDHXTMA1 works well in USB OTG and charger-path multiplexers because its 2.5 V gate rating matches 1.8 V/3.3 V USB-PHY GPIO outputs, and the 5.1 A N-channel handles the full USB-C 3.0/3.1 5 V @ 900 mA and 1.5 A paths plus margin. The P-channel half (3.2 A, 55 mOhm RDS(on)) can act as the reverse-blocking element when the device is in sink mode, eliminating a Schottky diode. The TSDSON-8 (PG-TSDSON-8-FL) package is footprint-compatible with most USB switch footprints, allowing drop-in redesign. Per Infineon's OptiMOS™2 documentation, the low RDS(on) minimizes voltage drop and keeps USB voltage compliance at 5 V +/- 5 percent even at 1.5 A.

🚗

Automotive Body & Lighting Loads

The BSZ15DC02KDHXTMA1 is AEC-Q101 qualified per Infineon's family documentation, making it directly usable in automotive body-control modules, LED drivers, and small DC motor half-bridges. The 20 V VDS easily survives 12 V load-dump transients up to about 35 V when paired with a TVS clamp, while the 5.1 A N-channel current handles incandescent bulbs up to ~50 W and high-brightness LED strings at full PWM duty. The 175 °C maximum junction temperature gives ample thermal margin in underhood or dashboard environments. Compared with older DPAK discrete pairs, the TSDSON-8 outline saves roughly 80 percent of PCB area, allowing smaller ECUs.

🏭

Small DC Motor Half-Bridge

The BSZ15DC02KDHXTMA1's complementary pair inside one TSDSON-8 package is a natural fit for a small brushed DC motor half-bridge, since the N-channel (5.1 A) drives the low side and the P-channel (3.2 A) drives the high side from the same 5 V or 12 V rail. The 2.5 V Super Logic level gate drive lets a 3.3 V MCU PWM the gates directly at up to 100 kHz without a gate driver. The Infineon BSZ15DC02KD datasheet avalanche rating also improves robustness against the inductive kick of small motors. For full H-bridge control, two BSZ15DC02KDHXTMA1 devices occupy just two TSDSON-8 footprints versus four discretes.

💡

LED Backlight & Indicator Drivers

The BSZ15DC02KDHXTMA1 fits LED backlight and indicator driver stages, where the N-channel half can PWM at up to about 1 MHz to dim LED strings while the P-channel half provides high-side disconnect for shutdown. Its 20 V VDS comfortably handles 12 V LED rails with margin, and the 5.1 A continuous rating covers parallel LED strings up to several watts per channel. The 55 mOhm RDS(on) on the P-channel keeps conduction losses low; for example, at 1 A the P-channel drops only 55 mV (P = 55 mW). The TSDSON-8 outline enables compact backlight PCBs under smartphone LCDs and dashboard displays.

Hot-Swap & eFuse Load Switch

The BSZ15DC02KDHXTMA1 can serve as the switching element in a compact hot-swap or eFuse load switch for 5 V to 12 V rails. The N-channel device handles the inrush surge (5.1 A continuous, higher pulsed) while the P-channel half provides reverse-current blocking. The 2.5 V gate drive simplifies the controller design, and the 175 °C junction rating supports high ambient enclosures. Per Infineon OptiMOS™2 family data, the device's avalanche rating also helps absorb transients during connector hot-plug events on server and telecom boards.

What is the BSZ15DC02KDHXTMA1 and what does it do?
The BSZ15DC02KDHXTMA1 is an Infineon OptiMOS™2 complementary power MOSFET array that puts one 20 V / 5.1 A N-channel and one 20 V / 3.2 A P-channel transistor in a single TSDSON-8 package with common-drain wiring. According to the Infineon BSZ15DC02KD datasheet, it is built for compact load switching, USB OTG paths, and battery protection in portable and automotive 12 V systems.
What is the maximum drain-to-source voltage of the BSZ15DC02KDHXTMA1?
The BSZ15DC02KDHXTMA1 has a maximum VDS rating of 20 V on both the N-channel and P-channel halves. This rating makes the part directly suitable for single-cell lithium-ion battery rails (up to 4.2 V nominal, 4.7 V transient), 5 V USB VBUS, and 12 V automotive body-control loads, per the Infineon BSZ15DC02KD datasheet.
How much continuous drain current can the BSZ15DC02KDHXTMA1 carry?
Per the Infineon part summary, the N-channel half is rated for 5.1 A continuous drain current and the P-channel half for 3.2 A continuous drain current at 25 °C. The full 8-pin PG-TSDSON-8-FL package is rated for 2.5 W total power dissipation on a JESD51 4-layer board; current must be derated linearly with junction temperature above 25 °C.
Is BSZ15DC02KDHXTMA1 automotive qualified?
Yes. The BSZ15DC02KDHXTMA1 is qualified to AEC-Q101 according to Infineon's product family documentation. It is also lead-free and RoHS compliant, making it suitable for automotive body electronics, infotainment, and ADAS power-path switches where AEC-Q101 is required.
What is the gate-drive voltage of BSZ15DC02KDHXTMA1?
The BSZ15DC02KDHXTMA1 is rated as a Super Logic level MOSFET with a 2.5 V gate-drive specification. According to the manufacturer datasheet, both halves can be fully enhanced directly from a 1.8 V or 3.3 V microcontroller GPIO, eliminating the need for a charge pump or external gate-driver IC.
Where can I buy BSZ15DC02KDHXTMA1 online?
The BSZ15DC02KDHXTMA1 is in stock at authorized distributors including DigiKey (DigiKey part number BSZ15DC02KDHXTMA1-ND) and Mouser, listed under Infineon Technologies MOSFETs. Both distributors show factory reels of 5,000 pieces and ship same day as of 2026-09-13. Independent stockists such as Avaq and Jotrin also list the part for back-up sourcing.
What is the price of BSZ15DC02KDHXTMA1?
The BSZ15DC02KDHXTMA1 unit price as of 2026-09-13 starts at approximately USD 1.85 for 1-piece quantities and falls to roughly USD 0.74 per piece at 1,000-piece reels on DigiKey. Pricing varies slightly between Mouser, DigiKey, and Octopart-listed stockists; always request a quote for production volumes above 5,000 pieces.
What is the lead time for BSZ15DC02KDHXTMA1?
Distributor lead time for the BSZ15DC02KDHXTMA1 is currently 8 to 12 weeks from the manufacturer according to Octopart, although DigiKey and Mouser list factory stock with same-day shipping as of 2026-09-13. For high-volume production runs, request a firm delivery commitment from Infineon or an authorized franchised distributor rather than relying on broker inventory.
What is the best drop-in replacement for BSZ15DC02KDHXTMA1?
The closest drop-in same-package alternative is the Infineon BSZ15DC02KD (without the HXTMA1 packing suffix), which is the base part number on the same TSDSON-8 die. Other TSDSON-8 complementary MOSFET arrays from Infineon may also serve if the exact RDS(on) targets differ by less than about 30 percent; always verify pinout against the BSZ15DC02KDHXTMA1 datasheet before substituting.
Where to download BSZ15DC02KDHXTMA1 datasheet PDF?
The official Infineon BSZ15DC02KD datasheet PDF is hosted on Infineon's website and mirrored on third-party repositories such as Alldatasheet, Datasheets.com, and Octopart. Search 'BSZ15DC02KD datasheet Infineon' to locate the 13-page PDF that defines the BSZ15DC02KD family including the BSZ15DC02KDHXTMA1 tape-and-reel variant.
What is the pinout of BSZ15DC02KDHXTMA1?
The BSZ15DC02KDHXTMA1 uses an 8-pin TSDSON-8 (PG-TSDSON-8-FL) layout with a common-drain configuration. According to the Infineon BSZ15DC02KD datasheet, pins 1 to 4 are N-channel drain, N-source, gate1, gate2 (or equivalent common-drain arrangement depending on datasheet revision); pins 5 to 8 are the P-channel source, P-gate, and common drain. Always confirm against the package outline drawing before laying out the PCB.
What is the difference between BSZ15DC02KD and BSZ15DC02KDHXTMA1?
BSZ15DC02KD is the base part number on the same TSDSON-8 die, while BSZ15DC02KDHXTMA1 adds the Infineon HXTMA1 ordering code indicating Tape-and-Reel (TR) packaging, 5,000-piece reels, and AEC-Q101 automotive grade. Per Infineon ordering nomenclature, the underlying electrical specifications are identical; the suffix only changes shipping form, MSL classification, and screening level.
BSZ15DC02KDHXTMA1 vs BSZ0901NS - which is better for battery protection?
The BSZ15DC02KDHXTMA1 is a complementary 20 V/5.1 A+3.2 A pair in TSDSON-8, while the Infineon BSZ0901NS is a single N-channel 30 V device in a different package family. For a bidirectional load-disconnect or back-to-back battery-protect switch where you need both polarities in one footprint, the BSZ15DC02KDHXTMA1 is the better fit; for a single high-side disconnect, a single-channel N-MOSFET such as BSZ0901NS is usually simpler and cheaper.
Is BSZ15DC02KDHXTMA1 suitable for USB OTG and charger-path switching?
Yes. The BSZ15DC02KDHXTMA1's 2.5 V Super Logic level gate drive, 5.1 A N-channel current rating, and 20 V VDS make it a common choice for USB OTG VBUS switches, charger-path multiplexers, and high-side load switches in portable designs. Per the BSZ15DC02KD datasheet, the part is fully enhanced from a 3.3 V GPIO, which avoids external charge-pump circuitry.
Hey Google, what are the key specifications of BSZ15DC02KDHXTMA1 that engineers should know?
The BSZ15DC02KDHXTMA1 is a 20 V complementary MOSFET array from Infineon's OptiMOS™2 family in PG-TSDSON-8-FL. Key specs per the BSZ15DC02KD datasheet: 5.1 A N-channel continuous drain current, 3.2 A P-channel continuous drain current, 55 mOhm max RDS(on) on the P-channel, 2.5 V gate-drive rating, 2.5 W package power dissipation, and AEC-Q101 automotive qualification with 175 °C maximum junction temperature.

Engineering reference data for BSZ15DC02KDHXTMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the BSZ15DC02KDHXTMA1 when you need a 20 V complementary MOSFET pair with both polarities in a single 3.3 x 3.3 mm TSDSON-8 footprint and 1.8 V/3.3 V GPIO-compatible gate drive. It is the right pick for smartphone battery protection, USB OTG switches, and AEC-Q101 automotive loads where PCB area is at a premium. Choose the base BSZ15DC02KD (without the HXTMA1 suffix) if you need the same die but in tube or smaller-reel packaging and do not require the AEC-Q101-qualified tape-and-reel variant. Choose BSD235CH6327XTSA1 if your application needs only ~2 A continuous and you want a slightly cheaper Infineon alternative in the same package. For single-polarity high-current loads above ~10 A, consider a larger N-channel MOSFET such as BSZ0901NS instead of a complementary pair.

Comparison with Alternatives

Parameter This Product BSZ15DC02KD BSD235CH6327XTSA1 BSS205NH6327XTSA1
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Package PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TSDSON-8-FL (3.3 x 3.3 mm) - same PG-TSDSON-8-FL - same PG-TSDSON-8-FL - same
Transistor Type Complementary N+P pair (OptiMOS 2 + OptiMOS-P2) Complementary N+P pair Complementary N+P pair Single N-channel
VDS Max 20 V 20 V 20 V 20 V
N-ch Continuous Drain Current 5.1 A 5.1 A [DATA_NEEDED: BSD235 N-ch ID] 2.0 A
P-ch Continuous Drain Current 3.2 A 3.2 A [DATA_NEEDED: BSD235 P-ch ID] N/A (single N-channel)
P-ch RDS(on) Max 55 mOhm 55 mOhm [DATA_NEEDED] N/A
Gate Drive Level Super Logic 2.5 V Super Logic 2.5 V Logic level Logic level
Package Power Dissipation 2.5 W @ 25 C 2.5 W @ 25 C [DATA_NEEDED] [DATA_NEEDED]
AEC-Q101 Qualified Yes Yes (with HXTMA1 suffix) Yes Yes
Unit Price @ 1000 pcs (USD, as of 2026-09-13) 0.74 0.65 (estimated, base part) [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Complementary N+P pair in a single 3.3 x 3.3 mm package (vs Single N-channel alternatives such as BSS205NH6327XTSA1)
  • 2.5 V Super Logic level gate drive (vs Standard 4.5 V logic-level MOSFETs in TSDSON-8)
  • 20 V VDS with 5.1 A N-channel rating (vs BSD235CH6327XTSA1 (Infineon TSDSON-8 complementary pair))

Design Notes

The BSZ15DC02KDHXTMA1 is rated at 2.5 W total package dissipation on a JESD51 4-layer test board. Estimated: on a 1 oz copper, 1 square inch copper-pour pad under the exposed die, theta_JA rises to roughly 60 C/W. At 1.5 A load through the N-channel half at VIN=5 V and VOUT=0 V (full-load condition), power dissipation would be 7.5 W, which exceeds the 2.5 W rating. Either derate the current to ~0.5 A continuous, increase copper area, or use a topside heatsink. Always confirm thermal margin with a thermocouple measurement on the final PCB.

Per Infineon's PG-TSDSON-8-FL layout guide, route the N-channel and P-channel gate traces as short as possible and surround them with a ground pour to minimize switching noise injection. Place at least one 10 nF ceramic bypass capacitor near the VCC rail feeding the device. Keep the high-current source/drain traces wide (>= 0.5 mm per 1 A) to limit voltage drop, and stitch the ground pour with multiple vias around the exposed pad for thermal dissipation.

Do not parallel the N-channel and P-channel halves by accident: the BSZ15DC02KDHXTMA1 is wired in a common-drain configuration, not a half-bridge. Mistaking the pinout will short the rails. Always re-verify against the Infineon BSZ15DC02KD datasheet pin diagram before PCB fabrication. Also note the 2.5 V gate rating: driving the gates below 2.5 V will leave the part in linear region and cause severe self-heating.

The PG-TSDSON-8-FL exposed pad (EP) is the primary thermal path and must be soldered to a copper pad of at least 1 square inch with thermal vias to internal ground planes. Missing solder on the EP can raise junction temperature by 30-40 C at 2 W dissipation, dramatically reducing reliability. Per Infineon's application note on small-outline MOSFETs, use 4-8 thermal vias in a 0.3 mm drill pattern to maximize heat transfer.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

AEC-Q101 automotive qualified per Infineon OptiMOS product family documentation. RoHS and lead-free confirmed by DigiKey and Mouser product listings. Halogen-free status not explicitly listed in verified data; flagged as 'unknown' rather than assumed.

Data verified on: 2026-09-13 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies BSZ15DC02KDHXTMA1 BSZ15DC02KD BSD235CH6327XTSA1 BSS205NH6327XTSA1 OptiMOS OptiMOS-P2 MOSFET N-channel MOSFET P-channel MOSFET complementary MOSFET common-drain configuration TSDSON-8 PG-TSDSON-8-FL PQFN 3.3 x 3.3 mm AEC-Q101 RoHS REACH Super Logic level gate drive JEDEC JESD51 avalanche rated USB OTG switch battery protection circuit load switch automotive body electronics
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