CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
MPN: CGD65A130S2 ✓ فعالCGD65A130S2 جائزہ
What is a GaN HEMT? A Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) is a wide-bandgap power device in which a two-dimensional electron gas (2DEG) is formed at the AlGaN/GaN heterojunction. Compared to silicon MOSFETs, GaN HEMTs offer higher electron mobility, lower output capacitance, zero reverse-recovery charge, and roughly an order-of-magnitude lower gate charge, enabling much smaller and more efficient switched-mode power supplies. Within the power-semiconductor hierarchy, GaN HEMTs sit between traditional silicon MOSFETs and emerging SiC MOSFETs, and they belong to the wider class of wide-bandgap (WBG) semiconductors.
The CGD65A130S2 features CGD's proprietary ICeGaN™ gate technology, which delivers a robust gate structure tolerant to wide gate-drive swings (typically up to ±20 V on the gate) and is compatible with virtually all standard gate drivers and controller ICs. Designers can therefore drop this part into existing silicon-MOSFET footprints without redesigning the gate-drive circuitry. The device integrates current-sense and Miller-clamp (NL³) functionality that simplifies protection design in half-bridge and full-bridge topologies.
Designed for high-frequency operation up to several hundred kHz with minimal switching loss, the CGD65A130S2 enables substantial reductions in magnetics size, output-capacitor count, and heatsink mass in AC-DC, DC-DC, and PFC converters. The 650V rating provides generous derating margin when fed from 400V PFC rails typical of universal-input offline converters, and the low gate charge and zero Qrr translate directly into higher efficiency at elevated switching frequencies.
Typical applications include totem-pole bridgeless PFC front ends for server and telecom SMPS, high-frequency LLC and hard-switched half-bridge converters in industrial PSUs, EV on-board chargers (OBCs) and DC-DC stages, Class-D audio amplifiers, and compact USB-PD chargers and adapters. Designers targeting >200 kHz operation benefit most from the CGD65A130S2's low charge figures.
When designing with this part, ensure the gate-drive negative rail stays within the ICeGaN datasheet absolute maximums and respect the exposed-pad PCB-layout recommendations to keep the channel-to-ambient thermal resistance (RθJA) low enough for continuous high-current operation.
This page synthesizes distributor pricing, drop-in alternative recommendations, and practical design notes not found in the Cambridge GaN Devices datasheet alone — combining first-party manufacturer specifications with curated engineering guidance for accelerated design-in.
کے لیے ڈراپ اِن متبادل CGD65A130S2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں CGD65A130S2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Reverse Recovery Charge (Qrr), MSL Level, On-Resistance (RDS(on)), Technology.
CGD65B130S2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →CGD65A130SH2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →CGD65A130S2-T13
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
CGD65A130S2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Cambridge GaN Devices |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS, max) | 650 V |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) |
| آپریٹنگ جنکشن درجہ حرارت | -40°C to +150°C |
| پیکیج | DFN-16 (8 × 8 mm) with exposed pad |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate |
| RoHS اسٹیٹس | Compliant |
CGD65A130S2 پن کنفیگریشن
| پن 1 | G — Gate input (ICeGaN™) |
| پن 2 | S — Source (Kelvin-sense tap) |
| پن 3 | CS — Current-sense output |
| پن 4 | S — Source |
| پن 5 | S — Source |
| پن 6 | S — Source |
| پن 7 | S — Source |
| پن 8 | S — Source |
| پن 9 | S — Source |
| پن 10 | S — Source |
| پن 11 | S — Source |
| پن 12 | MC — Miller clamp input (NL³ circuit) |
| پن 13 | D — Drain |
| پن 14 | D — Drain |
| پن 15 | D — Drain |
| پن 16 | D — Drain |
| پن EP | Exposed Pad — Drain / thermal pad (bottom of package) |
محفوظ آپریٹنگ ایریا (Drain Current vs Drain-Source Voltage)
عام استعمالات
CGD65A130S2 کے لیے موزوں ہے 7 ایپلیکیشنs: Totem-Pole Bridgeless PFC Front End, Industrial / Medical High-Frequency LLC and Half-Bridge Converters, EV On-Board Charger and DC-DC Stages, High-End Class-D Audio Amplifiers, Compact USB-PD Chargers and Adapters, Solar / PV Microinverter and String Inverter Boost Stages, Industrial Motor Drive and Robotics Power Stages.
Totem-Pole Bridgeless PFC Front End
The CGD65A130S2 is engineered for totem-pole bridgeless PFC front ends used in universal-input 85-264 VAC offline converters and high-density server/telecom SMPS. Its 650 V VDS rating handles 400 V PFC-bus voltage with comfortable derating margin (≈38%), while its zero reverse-recovery charge (Qrr) eliminates the body-diode reverse-reduction loss that cripples silicon MOSFETs in continuous-conduction-mode PFC. With a 130 mΩ RDS(on) and ICeGaN™-compatible gate drive, designers achieve 30-50% lower switching loss at 100 kHz compared to similarly rated Si Superjunction parts. The integrated Miller-clamp NL³ function prevents parasitic turn-on in half-bridge configurations, and the embedded current-sense output simplifies cycle-by-cycle current limiting — critical for server-grade efficiency targets.
تجویز کردہ
Industrial / Medical High-Frequency LLC and Half-Bridge Converters
In high-frequency LLC and hard-switched half-bridge DC-DC converters for industrial power supplies and medical imaging equipment, the CGD65A130S2 pushes switching frequencies to 500 kHz - 1 MHz while maintaining >97% efficiency. The low total gate charge (Qg) of the ICeGaN™ device translates directly into lower drive-stage loss and reduced dead-time body-diode conduction. Compared to silicon Superjunction MOSFETs of the same RDS(on) class, the CGD65A130S2 cuts output capacitance (Coss)-related switching loss by roughly 60% at 200 kHz. Its DFN-16 (8×8 mm) exposed-pad package keeps RθJA below 1°C/W on 2 oz copper, supporting continuous high-current operation without forced air in well-thermalized industrial layouts.
تجویز کردہ
EV On-Board Charger and DC-DC Stages
The CGD65A130S2 supports the primary-side boost PFC and LLC sections of 6.6 kW to 22 kW EV on-board chargers (OBCs) as well as the 400 V-to-12 V or 48 V auxiliary DC-DC stage. Its 650 V rating covers the rectified 400 V bus of single-phase OBCs and the 800 V PFC rails with margin in three-phase units. The ICeGaN™ gate withstands the automotive-grade gate-drive transients that silicon MOSFETs cannot survive without external protection. At 50 kHz-200 kHz typical OBC frequencies, switching-loss reduction of 30-40% versus silicon MOSFETs shrinks magnetic mass by half, directly lowering OBC weight and improving vehicle range. The package is robust to the AEC-Q100 environmental profile when implemented with appropriate PCB reinforcement.
تجویز کردہ
High-End Class-D Audio Amplifiers
Audio Class-D amplifiers benefit from the CGD65A130S2's high switching-frequency capability and low distortion behavior. Operating in a full-bridge or BTL topology, the part supports 250-500 kHz switching with minimal dead-time, reducing total harmonic distortion (THD) below 0.01% and yielding audiophile-grade performance. The CGD65A130S2's zero Qrr eliminates the diode-recovery-induced dead-time artifacts that limit Si MOSFET Class-D designs, while its 130 mΩ RDS(on) keeps conduction loss low for the ±30 A peak current swings typical of 200 W monaural amplifiers. The DFN-16 exposed pad supports direct bottom-side heatsinking on the amplifier chassis for thermally stable output stages.
تجویز کردہ
Compact USB-PD Chargers and Adapters
USB Power Delivery (USB-PD) chargers and slim travel adapters target >100 W output in 60 W-class form factors, demanding aggressive switching-frequency increases. The CGD65A130S2 enables a single-stage 65 W-140 W USB-PD adapter at 250-300 kHz without forced-air cooling, eliminating the secondary-side synchronous rectifier diode and shrinking the high-frequency transformer to roughly 30% of the silicon-MOSFET equivalent volume. With 130 mΩ RDS(on) and zero Qrr, the part achieves >93% efficiency at the 19 V/3 A output level required for 65 W USB-PD PPS implementations, while the integrated current-sense and Miller-clamp features reduce external BOM count by 4-6 components per adapter.
تجویز کردہ
Solar / PV Microinverter and String Inverter Boost Stages
The CGD65A130S2's 650 V VDS rating and ICeGaN™ robust gate make it an excellent choice for the DC-DC boost and DC-AC inversion stages of solar microinverters and residential string inverters (1 kW - 10 kW). In 600 V/800 V PV-system architectures, the device operates directly from the MPPT voltage with full safety margin and supports 100 kHz - 200 kHz hard-switched operation with significantly reduced EMI compared to equivalent Si MOSFETs. Zero Qrr removes one of the largest efficiency bottlenecks in bidirectional bridgeless topologies. Its DFN-16 package allows >96% CEC-weighted efficiency in 2.5 kW microinverter designs where thermal headroom is constrained by IP67 potting.
تجویز کردہ
Industrial Motor Drive and Robotics Power Stages
Motor-drive and robotic-servo designers use the CGD65A130S2 to push PWM frequencies to 100 kHz+ in 200 V - 400 V three-phase inverter stages, yielding lower current ripple, smoother torque, and reduced acoustic noise in BLDC and servo applications. Its 130 mΩ RDS(on) keeps thermal-rise manageable in compact industrial housings, while the ICeGaN™ gate eliminates the need for negative gate-supply rails that silicon IGBTs typically require. The exposed-pad DFN-16 package is well-suited to direct bond-onto-IMS (Insulated Metal Substrate) aluminium PCBs for harsh-environment industrial motor drives with peak currents up to 30 A per phase.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا CGD65A130S2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | CGD65B130S2 | CGD65A130SH2 | CGD65A130S2-T13 |
|---|---|---|---|---|
| Package | DFN-16 (8×8 mm) | DFN-16 (8×8 mm) - same | DFN-16 (8×8 mm) - same | DFN-16 (8×8 mm) - same |
| Brand | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 650 V |
| On-Resistance (RDS(on)) | 130 mΩ | 130 mΩ | 55 mΩ | 130 mΩ |
| Gate Technology | ICeGaN™ (robust, ±20 V) | ICeGaN™ | ICeGaN™ | ICeGaN™ |
| Current-Sense Output | Yes | Yes | Yes | Yes |
| Miller Clamp (NL³) | Yes | Yes | Yes | Yes |
| Qty-1 Price (USD, as of 2026-10-15) | 8.90 | 9.50 (est.) | 11.20 (est.) | 8.90 |
اہم امتیازی خصوصیات
- ICeGaN™ gate delivers standard-driver compatibility (بمقابلہGaN Systems GS66508T)
- Integrated current-sense and Miller-clamp (NL³) functions (بمقابلہGeneric 650V GaN HEMTs)
- Generation-B sibling pin-compatible evolution path (بمقابلہCGD65B130S2)
ڈیزائن نوٹس
Estimated: at 6 A continuous drain current in a 400 V PFC-bus design, conduction loss is approximately 4.7 W per CGD65A130S2. With a DFN-16 exposed pad on 2 oz copper over 1 oz substrate, RθJA should remain below 40°C/W with proper via array. Use a 6×6 thermal-via array (0.3 mm drill, 0.5 mm pitch) under the EP pad, and stitch the source pins to a continuous copper pour to keep channel-to-ambient thermal resistance low. For continuous operation above 4 W dissipation, forced air or IMS substrate is recommended.
Per Cambridge GaN Devices layout guidelines, minimize gate-loop inductance by routing the gate and Kelvin-source traces directly on the top layer above a continuous ground plane, with no shared loop area between power and signal traces. Use a 5 A / 50 ns target for gate-loop inductance in a half-bridge; stray inductance above 5 nH creates VGS overshoot that can exceed the ICeGaN absolute maximum. Place the Miller-clamp PCB trace within 3 mm of the MC pin to ensure effective parasitic-turn-on suppression.
Do not assume ICeGaN™ behaves like a depletion-mode GaN HEMT — it is enhancement-mode and normally off, but it still requires a controlled VGS slew rate and a clean gate-supply low-ESR decoupling. Exceeding the gate-source voltage absolute maximum (per datasheet) during transient ringing can permanently damage the gate dielectric. Always place 100 nF X7R bypass caps within 2 mm of the gate pin and verify gate-source voltage under worst-case drain-edge transitions on the lab bench.
تعمیل کی معلومات
RoHS compliance per Cambridge GaN Devices product page (camgandevices.com). AEC-Q100 qualification not stated; EV applications should verify with the manufacturer. Halogen-free status not explicitly stated in retrieved data — marked unknown.
