DRV8350HRTVR - 102V 3-Phase Smart Gate Driver | Texas Instruments
MPN: DRV8350HRTVR ✓ فعالDRV8350HRTVR جائزہ
What is a three-phase smart gate driver? A smart gate driver is an integrated circuit that sits between a microcontroller (MCU) and the discrete power MOSFETs (or GaN/IGBTs) of a three-phase inverter. It level-shifts low-voltage PWM signals to the high-side gate drive supply, provides strong gate sourcing/sinking currents for fast switching, and typically includes protection features such as undervoltage lockout, dead-time insertion, and shoot-through prevention. Smart gate drivers are a sub-category of motor driver ICs, which themselves fall under the broader power management and motion control semiconductor taxonomy.
Key features include a hardware (HW) interface variant (no SPI), integrated 3-phase charge pump for 100% duty-cycle support, adjustable dead time, and protection functions including VDS overcurrent sensing (via external shunt), gate-drive undervoltage lockout (UVLO), and thermal shutdown. The integrated dual LDO (5 V and 3.3 V) supplies the MCU and housekeeping circuits without external regulators, simplifying BOM. The hardware interface uses six PWM inputs (3x high-side, 3x low-side) plus enable and fault flags.
Typical applications include field-oriented control (FOC) of BLDC/PMSM motors in e-bikes, drones, cordless tools, and small industrial pumps; sinusoidal current control of appliance motors; and trapezoidal commutation of ceiling fans and pumps. The DRV8350H variant is preferred when the design MCU already performs current control and only needs gate-drive and protection, eliminating SPI register overhead.
Design considerations include thermal management: at 1 A continuous gate current and high switching losses, the 32-pin WQFN EP package requires an exposed thermal pad with substantial copper pour. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل DRV8350HRTVR — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں DRV8350HRTVR (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Product Type, Interface, Operating Temperature Range, MSL Level.
DRV8353HRTVR
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
DRV8350FSRTAR
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
DRV8350RSRTAR
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
DRV8350HRTVT
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
DRV8350HRTVR زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Product Type | 3-phase smart gate driver (HW interface) |
| Number of Half-Bridges | 3 |
| Peak Gate Source Current | 1 A |
| Peak Gate Sink Current | 2 A |
| Maximum Supply Voltage | 102 V |
| آپریٹنگ سپلائی وولٹیج | 6 V to 95 V |
| Integrated Bootstrap | Yes (with charge pump for 100% duty) |
| Integrated LDO | Dual LDO (5 V and 3.3 V) |
| انٹرفیس | Hardware (HW) - 6 PWM inputs |
| Current Shunt Amplifier | Not integrated (HW variant) |
| آپریٹنگ درجہ حرارت رینج | -40C to +125C |
| پیکیج | 32-WQFN (RTV) 5x5 mm with exposed pad |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 2 (per JEDEC J-STD-020) |
| RoHS اسٹیٹس | Compliant |
| Dead-Time Control | Adjustable, integrated |
| Protection Features | UVLO, thermal shutdown, shoot-through prevention, VDS/OCP |
DRV8350HRTVR پن کنفیگریشن
| پن 1 | GHB — High-side gate drive for phase B |
| پن 2 | SHB — Phase B source (half-bridge node) |
| پن 3 | GLB — Low-side gate drive for phase B |
| پن 4 | SLB — Phase B low-side source |
| پن 5 | GHC — High-side gate drive for phase C |
| پن 6 | SHC — Phase C source (half-bridge node) |
| پن 7 | GLC — Low-side gate drive for phase C |
| پن 8 | SLC — Phase C low-side source |
| پن 9 | GHA — High-side gate drive for phase A |
| پن 10 | SHA — Phase A source (half-bridge node) |
| پن 11 | GLA — Low-side gate drive for phase A |
| پن 12 | SLA — Phase A low-side source |
| پن 13 | GND — Ground |
| پن 14 | VCP — Charge pump output |
| پن 15 | VM — Main power supply (6-95V) |
| پن 16 | VGLS — Low-side gate drive supply |
| پن 17 | VGHS — High-side gate drive supply |
| پن 18 | BST_A — Bootstrap for phase A high-side |
| پن 19 | BST_B — Bootstrap for phase B high-side |
| پن 20 | BST_C — Bootstrap for phase C high-side |
| پن 21 | 5V — 5-V LDO output |
| پن 22 | 3V3 — 3.3-V LDO output |
| پن 23 | IDRIVE — Gate drive current setting |
| پن 24 | VDS — VDS overcurrent threshold setting |
| پن 25 | nFAULT — Fault indicator (active-low open-drain) |
| پن 26 | EN — Enable (active-high) |
| پن 27 | INHA — PWM input for high-side phase A |
| پن 28 | INLA — PWM input for low-side phase A |
| پن 29 | INHB — PWM input for high-side phase B |
| پن 30 | INLB — PWM input for low-side phase B |
| پن 31 | INHC — PWM input for high-side phase C |
| پن 32 | INLC — PWM input for low-side phase C |
عام استعمالات
DRV8350HRTVR کے لیے موزوں ہے 6 ایپلیکیشنs: E-Bike / E-Scooter BLDC Motor Control, Cordless Power Tools (Drills, Saws, Blowers), Industrial BLDC Pumps and Fans, Drones and Multirotor UAVs, White Goods - Washing Machines and Dishwashers, Robotics and AGV Drive Wheels.
E-Bike / E-Scooter BLDC Motor Control
The DRV8350HRTVR is well-suited for 36-V and 48-V e-bike/e-scooter traction motor inverters using BLDC/PMSM motors up to ~3 kW continuous. Its 102-V maximum supply tolerates 13S (48-V) lithium packs with regen-braking transients, while the integrated dual LDO (5 V and 3.3 V) supplies the host MCU and Hall-sensor circuitry without an external buck. The hardware PWM interface accepts 6-step or V/F commutation from low-cost MCUs. Designers typically pair it with 60-V or 80-V MOSFETs in a 3-phase half-bridge, achieving >95% inverter efficiency. The exposed thermal pad and 1 A/2 A gate drive enables 50 kHz PWM at moderate dead loss.
تجویز کردہ
Cordless Power Tools (Drills, Saws, Blowers)
Cordless power tools run on 18-V to 72-V Li-ion packs and use high-RPM BLDC motors for high power density. The DRV8350HRTVR's wide 6-V to 95-V operating range covers every common tool battery platform (5S to 13S), and the integrated charge pump enables 100% duty-cycle high-side drive essential for full-speed operation. Its 1 A source / 2 A sink peak current drives large TO-220 or DFN MOSFETs at 50-100 kHz PWM, minimizing switching loss and improving runtime. Hardware (HW) interface variants simplify firmware and reduce MCU cost - typical designs pair with low-cost Cortex-M0 MCUs.
تجویز کردہ
Industrial BLDC Pumps and Fans
Industrial pumps and fans use 3-phase PMSM/BLDC motors requiring sensorless FOC for variable flow/pressure control. The DRV8350HRTVR's hardware interface accepts the 6-PWM outputs directly from a sensorless FOC controller IC or DSP, with integrated VDS overcurrent protection safeguarding against pump blockage stall events. The 102-V supply rating enables direct connection to industrial 24-V, 48-V, and 72-V DC bus rails without pre-regulation. The exposed-pad WQFN-32 provides adequate thermal dissipation for continuous-duty industrial operation with 1 square inch of copper pour on the bottom layer.
تجویز کردہ
Drones and Multirotor UAVs
Multirotor drones use high-KV BLDC motors spinning up to 30,000 RPM with sinusoidal FOC for low-noise, high-efficiency propulsion. The DRV8350HRTVR's small 5x5 mm WQFN-32 footprint fits in the tight ESC (electronic speed controller) PCB envelope, while its 1 A/2 A gate drive handles the fast-switching 80-V or 100-V MOSFETs required for high-frequency operation. The integrated 3.3-V LDO supplies the small Cortex-M0 ESC MCU directly from the battery. HW interface enables direct PWM input from the flight controller without SPI register configuration, minimizing boot time at power-on.
تجویز کردہ
White Goods - Washing Machines and Dishwashers
Modern washing machines and dishwashers use direct-drive PMSM motors with sensorless FOC for variable-speed drum/pump control, replacing noisy universal motors. The DRV8350HRTVR supports 110-V or 220-V rectified mains input through its 102-V supply limit, paired with 600-V IGBTs or 600-V superjunction MOSFETs. The integrated 5-V/3.3-V LDO eliminates external housekeeping converters, reducing BOM cost in price-sensitive appliances. Hardware PWM inputs accept signals from the appliance MCU; overcurrent protection via VDS sensing prevents damage during locked-rotor or unbalanced-load conditions.
تجویز کردہ
Robotics and AGV Drive Wheels
Autonomous mobile robots (AMRs) and AGV drive wheels use gear-driven BLDC motors for precise position and velocity control. The DRV8350HRTVR's hardware interface accepts the PWM outputs from a motor-control MCU running field-oriented control, with VDS overcurrent sensing detecting collision stalls instantly. The 102-V supply supports 24-V and 48-V battery systems used in warehouse robots. The exposed-pad WQFN-32 package provides adequate thermal dissipation for continuous duty in 24/7 AGV operation, and the integrated charge pump enables 100% duty-cycle braking for regenerative energy recovery.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا DRV8350HRTVR — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | DRV8353HRTVR | DRV8350FSRTAR | DRV8350RSRTAR | DRV8350HRTVT | DRV8323RSRGZR |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | 32-WQFN (RTV) 5x5mm | 32-WQFN (RTV) 5x5mm - same | 32-WQFN (RTV) 5x5mm - same | 32-WQFN (RTV) 5x5mm - same | 32-WQFN (RTV) 5x5mm - same | 40-VQFN (RGZ) 7x7mm - DIFFERENT |
| Maximum Supply Voltage | 102 V | 102 V | 102 V | 102 V | 102 V | 60 V |
| Peak Gate Source Current | 1 A | 3 A | 1 A | 1 A | 1 A | 1 A |
| Peak Gate Sink Current | 2 A | 6 A | 2 A | 2 A | 2 A | 2 A |
| Interface | Hardware PWM (6 inputs) | Hardware PWM | Hardware PWM + current sense | SPI | Hardware PWM (same die) | SPI |
| Integrated Current Shunt Amplifier | No (HW variant) | Optional | Yes (3 amplifiers) | Yes (SPI variant) | No (HW variant) | Yes (3 amplifiers) |
| Integrated Dual LDO | Yes (5V and 3.3V) | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Highest maximum supply voltage in DRV835x family (102 V) (بمقابلہDRV8323RSRGZR)
- Integrated dual LDO (5V and 3.3V) eliminates two external regulators (بمقابلہDRV8301DCAR)
- HW interface variant - no SPI register configuration required (بمقابلہDRV8350RSRTAR)
ڈیزائن نوٹس
The 32-WQFN (RTV) package has an exposed thermal pad (EP) that must be soldered to a top-layer copper pour of at least 1 square inch (645 mm^2) for rated operation. Estimated: at 100 kHz PWM into 80-V MOSFETs with Qg=30 nC and IDRIVE=1 A source, gate-drive dissipation is ~0.3 W per phase (3 W total), and at full VM (95 V) with the charge pump running the EP may dissipate ~0.5 W. Junction temperature rise above ambient is approximately 25C with a 1 sq-in copper pour on a 1-oz 4-layer PCB. Always connect EP to GND with at least 9 thermal vias (0.3 mm drill, 0.5 mm pitch) for heat transfer to inner copper planes.
Place the VM bulk capacitor (at least 10 uF X7R ceramic + 100 uF electrolytic) within 5 mm of the VM pin to handle the high di/dt of the half-bridge switching node. The bootstrap capacitors (BST_A/B/C) must be 100 nF X7R ceramic placed within 2 mm of each BST pin to ensure clean high-side gate drive at 100% duty. The three-phase switch-node traces (SHA/SHB/SHC) should be wide (at least 2 mm) and routed directly to the MOSFET drains to minimize parasitic inductance. Keep the charge-pump flying capacitor (VCP, typically 1 uF) close to the VCP and VM pins.
Do not exceed 102 V on the VM pin - use a 100-V TVS (e.g., SMAJ100A) or RC damper for inductive transients from long motor cable harnesses. The IDRIVE pin voltage sets gate drive strength and VDS threshold simultaneously; use the recommended resistor-divider from the datasheet to set VDS_OCP at the desired MOSFET current limit. Always sequence VM power on before the MCU 3V3 LDO output is loaded - if the MCU starts before VM, the charge pump may not start cleanly causing a fault latched at nFAULT. Reset the fault by toggling EN pin low for >1 us.
Route the high-side gate drive return paths (SHx node) directly to the source of the high-side MOSFET - do NOT route through the bottom-layer GND plane (causes ground bounce and possible shoot-through). The PWM inputs (INHx/INLx) should be routed as a matched 50 ohm microstrip from the MCU to minimize ringing; add 22-ohm series damping resistors at the DRV8350 PWM pins if the trace is longer than 25 mm. Place the nFAULT pull-up resistor (10 kohm to 3V3) close to the DRV8350 to prevent false fault triggers from noise.
تعمیل کی معلومات
RoHS and REACH compliant per TI product page. Not AEC-Q100 qualified - DRV8350 family is not automotive grade; refer to TI automotive motor driver portfolio for AEC-Q100 options. Halogen-free mold compound, lead-free (Pb-free) plating, MSL Level 2 per JEDEC J-STD-020.
