DRV8350HRTVR - 102V 3-Phase Smart Gate Driver | Texas Instruments
MPN: DRV8350HRTVR ✓ Hoạt độngDRV8350HRTVR Tóm tắt
What is a three-phase smart gate driver? A smart gate driver is an integrated circuit that sits between a microcontroller (MCU) and the discrete power MOSFETs (or GaN/IGBTs) of a three-phase inverter. It level-shifts low-voltage PWM signals to the high-side gate drive supply, provides strong gate sourcing/sinking currents for fast switching, and typically includes protection features such as undervoltage lockout, dead-time insertion, and shoot-through prevention. Smart gate drivers are a sub-category of motor driver ICs, which themselves fall under the broader power management and motion control semiconductor taxonomy.
Key features include a hardware (HW) interface variant (no SPI), integrated 3-phase charge pump for 100% duty-cycle support, adjustable dead time, and protection functions including VDS overcurrent sensing (via external shunt), gate-drive undervoltage lockout (UVLO), and thermal shutdown. The integrated dual LDO (5 V and 3.3 V) supplies the MCU and housekeeping circuits without external regulators, simplifying BOM. The hardware interface uses six PWM inputs (3x high-side, 3x low-side) plus enable and fault flags.
Typical applications include field-oriented control (FOC) of BLDC/PMSM motors in e-bikes, drones, cordless tools, and small industrial pumps; sinusoidal current control of appliance motors; and trapezoidal commutation of ceiling fans and pumps. The DRV8350H variant is preferred when the design MCU already performs current control and only needs gate-drive and protection, eliminating SPI register overhead.
Design considerations include thermal management: at 1 A continuous gate current and high switching losses, the 32-pin WQFN EP package requires an exposed thermal pad with substantial copper pour. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho DRV8350HRTVR — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với DRV8350HRTVR (cùng hình factor và footprint) — khác nhau ở Package, Product Type, Interface, Operating Temperature Range, MSL Level.
DRV8353HRTVR
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
DRV8350FSRTAR
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
DRV8350RSRTAR
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
DRV8350HRTVT
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
DRV8350HRTVR Tỷ lệ tối đa & tính chất điện
| Product Type | 3-phase smart gate driver (HW interface) |
| Number of Half-Bridges | 3 |
| Peak Gate Source Current | 1 A |
| Peak Gate Sink Current | 2 A |
| Maximum Supply Voltage | 102 V |
| Điện áp cung cấp hoạt động | 6 V to 95 V |
| Integrated Bootstrap | Yes (with charge pump for 100% duty) |
| Integrated LDO | Dual LDO (5 V and 3.3 V) |
| Giao diện | Hardware (HW) - 6 PWM inputs |
| Current Shunt Amplifier | Not integrated (HW variant) |
| Khoảng nhiệt độ hoạt động | -40C to +125C |
| Hộp | 32-WQFN (RTV) 5x5 mm with exposed pad |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 2 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Dead-Time Control | Adjustable, integrated |
| Protection Features | UVLO, thermal shutdown, shoot-through prevention, VDS/OCP |
Cấu hình chân DRV8350HRTVR
| Chân 1 | GHB — High-side gate drive for phase B |
| Chân 2 | SHB — Phase B source (half-bridge node) |
| Chân 3 | GLB — Low-side gate drive for phase B |
| Chân 4 | SLB — Phase B low-side source |
| Chân 5 | GHC — High-side gate drive for phase C |
| Chân 6 | SHC — Phase C source (half-bridge node) |
| Chân 7 | GLC — Low-side gate drive for phase C |
| Chân 8 | SLC — Phase C low-side source |
| Chân 9 | GHA — High-side gate drive for phase A |
| Chân 10 | SHA — Phase A source (half-bridge node) |
| Chân 11 | GLA — Low-side gate drive for phase A |
| Chân 12 | SLA — Phase A low-side source |
| Chân 13 | GND — Ground |
| Chân 14 | VCP — Charge pump output |
| Chân 15 | VM — Main power supply (6-95V) |
| Chân 16 | VGLS — Low-side gate drive supply |
| Chân 17 | VGHS — High-side gate drive supply |
| Chân 18 | BST_A — Bootstrap for phase A high-side |
| Chân 19 | BST_B — Bootstrap for phase B high-side |
| Chân 20 | BST_C — Bootstrap for phase C high-side |
| Chân 21 | 5V — 5-V LDO output |
| Chân 22 | 3V3 — 3.3-V LDO output |
| Chân 23 | IDRIVE — Gate drive current setting |
| Chân 24 | VDS — VDS overcurrent threshold setting |
| Chân 25 | nFAULT — Fault indicator (active-low open-drain) |
| Chân 26 | EN — Enable (active-high) |
| Chân 27 | INHA — PWM input for high-side phase A |
| Chân 28 | INLA — PWM input for low-side phase A |
| Chân 29 | INHB — PWM input for high-side phase B |
| Chân 30 | INLB — PWM input for low-side phase B |
| Chân 31 | INHC — PWM input for high-side phase C |
| Chân 32 | INLC — PWM input for low-side phase C |
Ứng dụng tiêu biểu
DRV8350HRTVR phù hợp cho 6 Áp dụngs: E-Bike / E-Scooter BLDC Motor Control, Cordless Power Tools (Drills, Saws, Blowers), Industrial BLDC Pumps and Fans, Drones and Multirotor UAVs, White Goods - Washing Machines and Dishwashers, Robotics and AGV Drive Wheels.
E-Bike / E-Scooter BLDC Motor Control
The DRV8350HRTVR is well-suited for 36-V and 48-V e-bike/e-scooter traction motor inverters using BLDC/PMSM motors up to ~3 kW continuous. Its 102-V maximum supply tolerates 13S (48-V) lithium packs with regen-braking transients, while the integrated dual LDO (5 V and 3.3 V) supplies the host MCU and Hall-sensor circuitry without an external buck. The hardware PWM interface accepts 6-step or V/F commutation from low-cost MCUs. Designers typically pair it with 60-V or 80-V MOSFETs in a 3-phase half-bridge, achieving >95% inverter efficiency. The exposed thermal pad and 1 A/2 A gate drive enables 50 kHz PWM at moderate dead loss.
Được đề xuất
Cordless Power Tools (Drills, Saws, Blowers)
Cordless power tools run on 18-V to 72-V Li-ion packs and use high-RPM BLDC motors for high power density. The DRV8350HRTVR's wide 6-V to 95-V operating range covers every common tool battery platform (5S to 13S), and the integrated charge pump enables 100% duty-cycle high-side drive essential for full-speed operation. Its 1 A source / 2 A sink peak current drives large TO-220 or DFN MOSFETs at 50-100 kHz PWM, minimizing switching loss and improving runtime. Hardware (HW) interface variants simplify firmware and reduce MCU cost - typical designs pair with low-cost Cortex-M0 MCUs.
Được đề xuất
Industrial BLDC Pumps and Fans
Industrial pumps and fans use 3-phase PMSM/BLDC motors requiring sensorless FOC for variable flow/pressure control. The DRV8350HRTVR's hardware interface accepts the 6-PWM outputs directly from a sensorless FOC controller IC or DSP, with integrated VDS overcurrent protection safeguarding against pump blockage stall events. The 102-V supply rating enables direct connection to industrial 24-V, 48-V, and 72-V DC bus rails without pre-regulation. The exposed-pad WQFN-32 provides adequate thermal dissipation for continuous-duty industrial operation with 1 square inch of copper pour on the bottom layer.
Được đề xuất
Drones and Multirotor UAVs
Multirotor drones use high-KV BLDC motors spinning up to 30,000 RPM with sinusoidal FOC for low-noise, high-efficiency propulsion. The DRV8350HRTVR's small 5x5 mm WQFN-32 footprint fits in the tight ESC (electronic speed controller) PCB envelope, while its 1 A/2 A gate drive handles the fast-switching 80-V or 100-V MOSFETs required for high-frequency operation. The integrated 3.3-V LDO supplies the small Cortex-M0 ESC MCU directly from the battery. HW interface enables direct PWM input from the flight controller without SPI register configuration, minimizing boot time at power-on.
Được đề xuất
White Goods - Washing Machines and Dishwashers
Modern washing machines and dishwashers use direct-drive PMSM motors with sensorless FOC for variable-speed drum/pump control, replacing noisy universal motors. The DRV8350HRTVR supports 110-V or 220-V rectified mains input through its 102-V supply limit, paired with 600-V IGBTs or 600-V superjunction MOSFETs. The integrated 5-V/3.3-V LDO eliminates external housekeeping converters, reducing BOM cost in price-sensitive appliances. Hardware PWM inputs accept signals from the appliance MCU; overcurrent protection via VDS sensing prevents damage during locked-rotor or unbalanced-load conditions.
Được đề xuất
Robotics and AGV Drive Wheels
Autonomous mobile robots (AMRs) and AGV drive wheels use gear-driven BLDC motors for precise position and velocity control. The DRV8350HRTVR's hardware interface accepts the PWM outputs from a motor-control MCU running field-oriented control, with VDS overcurrent sensing detecting collision stalls instantly. The 102-V supply supports 24-V and 48-V battery systems used in warehouse robots. The exposed-pad WQFN-32 package provides adequate thermal dissipation for continuous duty in 24/7 AGV operation, and the integrated charge pump enables 100% duty-cycle braking for regenerative energy recovery.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho DRV8350HRTVR — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | DRV8353HRTVR | DRV8350FSRTAR | DRV8350RSRTAR | DRV8350HRTVT | DRV8323RSRGZR |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | 32-WQFN (RTV) 5x5mm | 32-WQFN (RTV) 5x5mm - same | 32-WQFN (RTV) 5x5mm - same | 32-WQFN (RTV) 5x5mm - same | 32-WQFN (RTV) 5x5mm - same | 40-VQFN (RGZ) 7x7mm - DIFFERENT |
| Maximum Supply Voltage | 102 V | 102 V | 102 V | 102 V | 102 V | 60 V |
| Peak Gate Source Current | 1 A | 3 A | 1 A | 1 A | 1 A | 1 A |
| Peak Gate Sink Current | 2 A | 6 A | 2 A | 2 A | 2 A | 2 A |
| Interface | Hardware PWM (6 inputs) | Hardware PWM | Hardware PWM + current sense | SPI | Hardware PWM (same die) | SPI |
| Integrated Current Shunt Amplifier | No (HW variant) | Optional | Yes (3 amplifiers) | Yes (SPI variant) | No (HW variant) | Yes (3 amplifiers) |
| Integrated Dual LDO | Yes (5V and 3.3V) | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Highest maximum supply voltage in DRV835x family (102 V) (vsDRV8323RSRGZR)
- Integrated dual LDO (5V and 3.3V) eliminates two external regulators (vsDRV8301DCAR)
- HW interface variant - no SPI register configuration required (vsDRV8350RSRTAR)
Ghi chú thiết kế
The 32-WQFN (RTV) package has an exposed thermal pad (EP) that must be soldered to a top-layer copper pour of at least 1 square inch (645 mm^2) for rated operation. Estimated: at 100 kHz PWM into 80-V MOSFETs with Qg=30 nC and IDRIVE=1 A source, gate-drive dissipation is ~0.3 W per phase (3 W total), and at full VM (95 V) with the charge pump running the EP may dissipate ~0.5 W. Junction temperature rise above ambient is approximately 25C with a 1 sq-in copper pour on a 1-oz 4-layer PCB. Always connect EP to GND with at least 9 thermal vias (0.3 mm drill, 0.5 mm pitch) for heat transfer to inner copper planes.
Place the VM bulk capacitor (at least 10 uF X7R ceramic + 100 uF electrolytic) within 5 mm of the VM pin to handle the high di/dt of the half-bridge switching node. The bootstrap capacitors (BST_A/B/C) must be 100 nF X7R ceramic placed within 2 mm of each BST pin to ensure clean high-side gate drive at 100% duty. The three-phase switch-node traces (SHA/SHB/SHC) should be wide (at least 2 mm) and routed directly to the MOSFET drains to minimize parasitic inductance. Keep the charge-pump flying capacitor (VCP, typically 1 uF) close to the VCP and VM pins.
Do not exceed 102 V on the VM pin - use a 100-V TVS (e.g., SMAJ100A) or RC damper for inductive transients from long motor cable harnesses. The IDRIVE pin voltage sets gate drive strength and VDS threshold simultaneously; use the recommended resistor-divider from the datasheet to set VDS_OCP at the desired MOSFET current limit. Always sequence VM power on before the MCU 3V3 LDO output is loaded - if the MCU starts before VM, the charge pump may not start cleanly causing a fault latched at nFAULT. Reset the fault by toggling EN pin low for >1 us.
Route the high-side gate drive return paths (SHx node) directly to the source of the high-side MOSFET - do NOT route through the bottom-layer GND plane (causes ground bounce and possible shoot-through). The PWM inputs (INHx/INLx) should be routed as a matched 50 ohm microstrip from the MCU to minimize ringing; add 22-ohm series damping resistors at the DRV8350 PWM pins if the trace is longer than 25 mm. Place the nFAULT pull-up resistor (10 kohm to 3V3) close to the DRV8350 to prevent false fault triggers from noise.
Thông tin tuân thủ
RoHS and REACH compliant per TI product page. Not AEC-Q100 qualified - DRV8350 family is not automotive grade; refer to TI automotive motor driver portfolio for AEC-Q100 options. Halogen-free mold compound, lead-free (Pb-free) plating, MSL Level 2 per JEDEC J-STD-020.
