GAN111-650WSBQ - 650V 97mOhm GaN FET TO-247 | Nexperia
MPN: GAN111-650WSBQ ✓ فعالGAN111-650WSBQ جائزہ
A GaN FET is a power transistor built on gallium nitride, a wide-bandgap (WBG) semiconductor with a bandgap of roughly 3.4 eV versus 1.1 eV for silicon. Within the power-semiconductor hierarchy (transistor -> FET -> wide-bandgap power transistor -> GaN HEMT), GaN devices switch faster and with lower switching losses than silicon MOSFETs or IGBTs, enabling higher-frequency power conversion with smaller magnetics.
The GAN111-650WSBQ combines Nexperia's high-voltage GaN HEMT H2 technology with an integrated low-voltage silicon MOSFET in a cascode configuration. The cascode stack delivers a true normally-off gate behavior, allowing the device to be driven with a conventional gate drive voltage of 10 V like a standard silicon MOSFET, simplifying gate-driver selection compared with direct-drive e-mode GaN parts.
Key differentiating specifications include the 97 mOhm RDS(on) figure of merit, the 650 V avalanche-classed drain rating, a wide operating temperature range of -55 C to +175 C, and the rugged TO-247 through-hole package that simplifies thermal design and prototyping compared with SMD GaN packages.
Typical applications include high-efficiency switched-mode power supplies (SMPS), totem-pole bridgeless power factor correction (PFC) stages, LLC resonant converters, solar / renewable-energy inverters, and servo or industrial motor-drive front ends where high-frequency, high-voltage switching directly reduces converter size and loss.
When designing with this device, minimize gate-loop and power-loop inductance, and provide a negative or zero-voltage gate turn-off to suppress dv/dt-induced turn-on; verify board layout against the manufacturer datasheet layout guidance for high-frequency GaN switching.
This page synthesizes distributor pricing, verified drop-in alternatives, pinout data, and practical GaN-specific design notes not consolidated on the manufacturer product page alone.
کے لیے ڈراپ اِن متبادل GAN111-650WSBQ — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں GAN111-650WSBQ (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology.
GAN111-650WSB
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →GAN063-650WSBQ
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
GAN111-650WSBQ زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Technology | GaN HEMT H2 + low-voltage Si MOSFET cascode |
| Polarity | N-Channel, normally-off (GaN FET) |
| Drain-Source Voltage (VDS) | 650 V |
| On-State Resistance (RDS(on)) | 97 mOhm |
| Continuous Drain Current (ID) | 21 A (Ta) |
| Power Dissipation (PD) | 107 W (Ta) |
| Drive Voltage | 10 V |
| آپریٹنگ درجہ حرارت رینج | -55 C to +175 C |
| پیکیج | TO-247-3L (SOT429), Through Hole |
| ماؤنٹنگ ٹائپ | Through Hole |
| Configuration | Single FET |
| RoHS اسٹیٹس | Compliant |
GAN111-650WSBQ پن کنفیگریشن
| پن 1 | G — Gate - driven with conventional 10 V logic (cascode Si MOSFET gate) |
| پن 2 | D — Drain - connected to package metal tab |
| پن 3 | S — Source - Kelvin return path for gate loop |
عام استعمالات
GAN111-650WSBQ کے لیے موزوں ہے 6 ایپلیکیشنs: Totem-Pole Bridgeless PFC, LLC Resonant Converters, Solar and Renewable Energy Inverters, Industrial Motor Drives, High-Density SMPS / Telecom Rectifiers, High-Voltage Test and Prototype Platforms.
Totem-Pole Bridgeless PFC
The GAN111-650WSBQ is a strong fit for the fast switching leg of a continuous-conduction-mode totem-pole bridgeless PFC stage. Its GaN HEMT H2 cascode technology has near-zero reverse-recovery charge, eliminating the body-diade recovery loss that makes silicon MOSFETs unsuitable in this topology at the 650 V class. With 97 mOhm RDS(on) and 21 A continuous rating, a single device serves several-hundred-watt to kilowatt PFC front ends. Placed in a tight commutation loop and driven with a 10 V conventional gate driver, it sustains 65-100 kHz CCM switching with low loss; the main trade-off is strict layout discipline to control loop inductance and dv/dt.
تجویز کردہ
LLC Resonant Converters
In half-bridge and full-bridge LLC resonant converters for server PSUs, adapters and LED drivers, the GAN111-650WSBQ provides 650 V blocking with 97 mOhm conduction at a ZVS operating point. Because LLC achieves zero-voltage switching, the GaN FET's low output charge and cascode reverse-conduction behavior minimize residual losses while allowing switching frequencies well above 100 kHz, shrinking the resonant inductor and transformer. The TO-247 through-hole package simplifies attaching a heatsink for the 107 W dissipation class. Designers should verify ZVS over the full load range, since loss of ZVS sharply raises turn-on loss in GaN devices at high bus voltage.
تجویز کردہ
Solar and Renewable Energy Inverters
Solar micro-inverter and string-inverter power stages benefit from the GAN111-650WSBQ's 650 V rating, which directly accommodates 400 V DC-link bus systems with margin. The 97 mOhm RDS(on) keeps conduction loss low during MPPT boost and DC-AC stages, while GaN's fast switching enables compact, high-frequency magnetics important for rooftop and wall-mounted enclosures. Operating from -55 C to +175 C supports harsh outdoor thermal environments. Because GaN lacks a body diode, designers must implement defined freewheeling paths and verify dead-time logic; in return they gain very low reverse-recovery loss in hard-switched boost stages running at tens to hundreds of kilohertz.
تجویز کردہ
Industrial Motor Drives
For servo drives and industrial inverters, the GAN111-650WSBQ can serve in the DC-link chopper, braking stage, or high-frequency inverter legs of 400 V-class systems. Its normally-off, 10 V-driven gate behaves like a silicon MOSFET, easing migration from existing IGBT or MOSFET drivers. GaN switching speed permits higher PWM frequencies, which reduces acoustic noise and current ripple in motor windings. The TO-247 package with 107 W dissipation capability simplifies mounting on existing extruded heatsinks. Designers should limit dv/dt-induced issues with careful gate turn-off impedance and verify gate-drive robustness against the fast switching edges inherent to GaN HEMT technology.
تجویز کردہ
High-Density SMPS / Telecom Rectifiers
Telecom rectifiers and high-density AC-DC power supplies push for maximum watts per cubic inch, and the GAN111-650WSBQ addresses this by allowing switching frequencies that shrink transformers and EMI filters. With 650 V / 97 mOhm / 21 A ratings, one device class covers 500 W to multi-kilowatt brick and shelf power systems on a 400 V bus. The through-hole TO-247 format is common in current telecom power platforms, making the part retrofittable into existing thermals. The cascode structure's conventional 10 V gate drive lets designers reuse proven MOSFET driver circuits, reducing qualification risk when upgrading silicon platforms to GaN efficiency levels.
تجویز کردہ
High-Voltage Test and Prototype Platforms
The TO-247-3L through-hole package of the GAN111-650WSBQ makes it especially convenient for evaluation boards, lab prototypes, and test fixtures for 650 V GaN switching research. Engineers can socket or solder the device, attach clip-on or bolted heatsinks, and probe gate and switching nodes directly, which is far harder with SMD GaN parts. With 97 mOhm RDS(on) and a 10 V conventional gate interface, the device pairs with standard MOSFET bench drivers for double-pulse testing of 400 V bus systems up to 21 A. This makes it a common first article for validating gate-driver and layout concepts before SMD production GaN parts are selected.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا GAN111-650WSBQ — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | GAN111-650WSB | GAN063-650WSBQ |
|---|---|---|---|
| Package | TO-247-3L (SOT429) | TO-247-3L (SOT429) - same | TO-247-3L (SOT429) - same |
| Brand | Nexperia | Nexperia | Nexperia |
| Drain-Source Voltage | 650 V | 650 V | 650 V |
| RDS(on) | 97 mOhm | 97 mOhm | 63 mOhm |
| Gate Drive Voltage | 10 V | 10 V | 10 V |
| Operating Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
اہم امتیازی خصوصیات
- Qualified (Q-suffixed) ordering code of the same die (بمقابلہGAN111-650WSB)
- Lower on-resistance option in same footprint (بمقابلہGAN063-650WSBQ)
- Cascode normally-off structure with conventional 10 V gate drive (بمقابلہdirect-drive e-mode GaN FETs of other brands)
ڈیزائن نوٹس
GaN switching speed makes power-loop inductance the dominant cause of voltage overshoot. Keep the commutation loop (GAN111-650WSBQ plus its freewheeling companion device and DC-link capacitor) as physically small as possible; use laminated bus structures or tight parallel-plane returns. Place the gate driver within a few millimeters of pin 1 and use a dedicated source/Kelvin return to pin 3 rather than sharing the power ground path, so the gate loop does not enclose power-loop flux that causes spurious turn-on at high di/dt.
The GAN111-650WSBQ has no intrinsic body diode; reverse conduction occurs through the channel with a forward voltage set by the gate drive. Do not rely on diode-like reverse recovery behavior inherited from silicon designs. In half-bridge topologies, guarantee dead time is sufficient for ZVS or defined commutation, and verify the reverse-conduction loss in your efficiency budget. Also remember the TO-247 tab is at drain potential - isolate the heatsink or use an insulated pad when the drain sits on a 400 V rail.
Estimated: at 10 A RMS, conduction loss alone is I2 x RDS(on) = 100 x 0.097 = about 9.7 W; add switching loss at your operating frequency and voltage. With a package capability of 107 W (Ta), a modest heatsink on the TO-247 tab with thermal grease and forced airflow is normally sufficient for tens of watts of dissipation. Derive the exact junction-to-case thermal resistance from the Nexperia datasheet thermal table and verify junction temperature stays below the 175 C maximum with at least 20-30 C design margin.
تعمیل کی معلومات
RoHS compliance indicated by distributor listings (LCSC, DigiKey). REACH, lead-free, halogen-free and conflict-minerals statuses not stated in retrieved data; consult Nexperia's official product compliance documentation.
