GAN111-650WSB - 650V 97mΩ GaN FET TO-247 | Nexperia
MPN: GAN111-650WSB ✓ فعالGAN111-650WSB جائزہ
A GaN FET (Gallium Nitride Field-Effect Transistor) is a wide-bandgap power transistor that operates as a higher-frequency, higher-efficiency successor to the silicon MOSFET in the power semiconductor hierarchy. Within the taxonomy GaN FET -> HEMT -> power transistor -> discrete semiconductor -> power management, GaN devices deliver lower on-resistance per unit area, faster switching edges, smaller magnetic components, and reduced conduction/switching losses compared with silicon superjunction MOSFETs at the same voltage rating.
Key features of the GAN111-650WSB include 650 V drain-source blocking voltage, 97 mΩ typical on-resistance (RDS(on)), and a normally-off architecture that simplifies gate drive and failsafe behavior. The TO-247 package offers industry-standard through-hole mounting with robust thermal performance for high-current applications. The cascode H2 HEMT topology provides a hardened gate that withstands standard silicon MOSFET gate-drive levels.
Typical applications include high-efficiency AC-DC and DC-DC converters, server and telecom switch-mode power supplies (SMPS), photovoltaic microinverters and string inverters, on-board chargers (OBC) for electric vehicles, and industrial motor drives. The 650 V rating also makes it suitable for three-phase PFC front ends and totem-pole bridgeless PFC topologies.
When designing with this device, ensure the gate driver can supply sufficient pull-down current to handle high dv/dt transitions, and place the gate-source loop as small as possible to minimize ringing. Compared with silicon superjunction MOSFETs of similar RDS(on), the GAN111-650WSB delivers substantially lower switching losses and supports higher switching frequencies, reducing magnetic component size.
This page synthesizes Nexperia datasheet parameters, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل GAN111-650WSB — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں GAN111-650WSB (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), Mounting Type, Polarity.
GAN041-650WSB
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
GAN063-650WSB
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
GAN110-650WSB
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IGLD60R070D1AUMA3
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →GS66508T
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
GAN111-650WSB زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Nexperia |
| Drain-Source Voltage (VDS) | 650 V |
| On-Resistance RDS(on) (typ) | 97 mΩ |
| Continuous Drain Current (ID, at Ta) | 21 A |
| Power Dissipation (PD, at Ta) | 107 W |
| Technology | GaN HEMT H2 (cascode, normally-off) |
| Polarity / Channel Type | N-Channel |
| پیکیج | TO-247 (SOT429) through-hole, 3-lead |
| ماؤنٹنگ ٹائپ | Through Hole |
| Configuration | Single FET |
| Gate Drive Compatibility | Standard silicon MOSFET gate drive (0-12 V typical) |
| Operating Mode | Normally-off (cascode) |
| Target Applications | SMPS, PFC, OBC, solar inverter, industrial drives |
| RoHS اسٹیٹس | Compliant |
| Orderable Part Suffix | WSBQ (tape-and-reel/ammopack) |
GAN111-650WSB پن کنفیگریشن
| پن 1 | Gate — Standard silicon MOSFET compatible gate input |
| پن 2 | Drain (Tab) — Drain connection (also via metal mounting tab) |
| پن 3 | Source — Source connection (signal source) |
Forward محفوظ آپریٹنگ ایریا
عام استعمالات
GAN111-650WSB کے لیے موزوں ہے 6 ایپلیکیشنs: Totem-Pole Bridgeless PFC Front End, Server & Telecom SMPS Primary Switch, Solar String Inverter DC-AC Stage, EV On-Board Charger (OBC) PFC Stage, Industrial Motor Drive Inverter, Datacenter 48 V Intermediate Bus Converter.
Totem-Pole Bridgeless PFC Front End
The GAN111-650WSB's cascode HEMT H2 topology eliminates body-diode reverse-recovery, making it ideal for totem-pole bridgeless PFC at 100-300 W to several kW. With 97 mΩ RDS(on) and 650 V blocking, the device supports CCM operation at 100 kHz-1 MHz switching frequency, reaching 98.5%+ efficiency with smaller magnetics than 650 V silicon superjunction MOSFETs. Place GaN FETs in the high-frequency leg; use standard silicon rectifiers in the slow leg. The standard MOSFET-compatible gate drive simplifies driver selection versus e-mode GaN devices.
تجویز کردہ
Server & Telecom SMPS Primary Switch
In 1-3 kW server and telecom SMPS, the GAN111-650WSB serves as the primary-side switch in CCM hard-switched converters or as the 400 V PFC switch. Its 97 mΩ RDS(on) at 650 V class delivers 30-50% lower switching losses than silicon superjunction MOSFETs, enabling higher switching frequencies (200-500 kHz) and 20-40% smaller magnetic components. The TO-247 package offers robust thermal dissipation at 21 A continuous drain current and supports standard MOSFET gate drivers, reducing design complexity.
تجویز کردہ
Solar String Inverter DC-AC Stage
In photovoltaic string inverters and microinverters, the GAN111-650WSB functions in the DC-AC bridge leg switching at 50-200 kHz. Its 650 V blocking handles 600 V DC bus transients with margin, and 97 mΩ RDS(on) reduces conduction losses under partial-load conditions where inverter efficiency matters most. The normally-off cascode topology ensures fail-safe behavior on grid loss events. Nexperia GaN FETs have demonstrated field reliability in solar inverters to LEO and terrestrial PV systems.
تجویز کردہ
EV On-Board Charger (OBC) PFC Stage
In 3.3 kW to 11 kW EV on-board chargers, the GAN111-650WSB excels in the PFC and DC-DC primary stages where high efficiency and high power density are mandated. Its 97 mΩ RDS(on) supports continuous operation above 3 kW, and its cascode HEMT H2 topology enables bidirectional totem-pole PFC and DAB topologies for V2X applications. The TO-247 through-hole package handles thermal loads in automotive underhood environments with proper heatsinking.
تجویز کردہ
Industrial Motor Drive Inverter
In 1-5 kW industrial motor drives, the GAN111-650WSB is suitable for the 400-480 V AC three-phase inverter leg where high switching frequency (>20 kHz) reduces motor winding losses and audible noise. The 97 mΩ RDS(on) and 21 A continuous rating cover most sub-3 kW drives; 650 V blocking provides 30% margin above rectified 480 V bus. GaN FETs also reduce dead-time, improving low-speed torque ripple versus silicon IGBT solutions.
تجویز کردہ
Datacenter 48 V Intermediate Bus Converter
For 48 V to 12 V or 48 V to 5 V bus converters in AI/datacenter applications, the GAN111-650WSB can serve as the primary switch in 1-2 kW LLC or full-bridge topologies. Its 650 V rating provides headroom for 48 V input plus transient overshoot, while 97 mΩ RDS(on) supports high switching frequency (>500 kHz) for planar magnetics. GaN FETs at this frequency shrink the bus converter by 30-50% versus silicon solutions, addressing AI rack power-density pressure.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا GAN111-650WSB — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | GAN041-650WSB | GAN063-650WSB | GAN110-650WSB | IGLD60R070D1 | GS66508T |
|---|---|---|---|---|---|---|
| Brand | Nexperia | Nexperia | Nexperia | Nexperia | Infineon | GaN Systems |
| Package | TO-247 (SOT429) | TO-247 (SOT429) - same | TO-247 (SOT429) - same | TO-247 (SOT429) - same | TO-247 - same | GaNPX (T-Bot) - different footprint, NOT drop-in |
| Drain-Source Voltage | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| RDS(on) typ | 97 mΩ | 41 mΩ (~58% lower) | 63 mΩ (~35% lower) | 110 mΩ (~13% higher) | 70 mΩ (~28% lower) | 50 mΩ (~48% lower) |
| Continuous Drain Current | 21 A (Ta) | 31 A (Ta) | 26 A (Ta) | 20 A (Ta) | 31 A (Ta) | 30 A (Tc) |
| Technology | Cascode GaN HEMT H2 | Cascode GaN HEMT H2 | Cascode GaN HEMT H2 | Cascode GaN HEMT H2 | CoolGaN e-mode | E-mode GaN |
| Normally-Off | Yes (cascode) | Yes (cascode) | Yes (cascode) | Yes (cascode) | Yes (e-mode) | Yes (e-mode) |
| Unit Price (qty-1, USD, as of 2026-10-11) | 5.40 | 9.20 (higher current, premium) | 6.80 | 5.10 | 7.20 | 8.40 |
اہم امتیازی خصوصیات
- Cascode HEMT H2 architecture allows standard gate-drive (بمقابلہGS66508T)
- Higher current than Infineon IGD60R070D1 in same package (بمقابلہIGLD60R070D1)
- Drop-in TO-247 replacement for silicon superjunction MOSFETs (بمقابلہSilicon superjunction MOSFET (e.g. IPW65R095C7A))
ڈیزائن نوٹس
GaN FETs have far higher dv/dt and di/dt than silicon MOSFETs - place the gate driver as close as possible to the gate pin to minimize gate-loop inductance. Estimated: at 100 V/ns dv/dt, each 1 nH of gate-loop inductance generates 100 V ringing on the gate. Target gate-loop inductance below 5 nH by routing gate and source return on adjacent PCB layers with minimum loop area.
TO-247 packages require substantial heatsinking at 21 A continuous current. Estimated: at 21 A and 97 mΩ RDS(on), conduction loss is approximately 43 W, requiring a heatsink with thermal resistance under 2 C/W to keep junction rise below 80 C above ambient. Use thermal interface material rated for 6 W/m-K or better, and consider a forced-air solution for sustained high-current operation.
Do not exceed VGS ratings of the cascode MOSFET portion; the Nexperia GAN111-650WSB accepts standard ±20 V gate drive. Avoid slow gate transitions - turn-off propagation delay mismatch can cause shoot-through in half-bridge configurations. Use a gate driver with matched propagation delays and split turn-on/turn-off resistors to optimize switching speed without causing excessive ringing.
The TO-247 through-hole package requires adequate copper pad area on both source and drain sides. Estimated: at 100 kHz switching with 21 A, recommend at least 100 mm² of 2 oz copper pour connected to the drain tab, plus a 25 mm² source-side pour. Keep the switching-node copper minimal to avoid antenna-mode EMI emissions from the high dv/dt transitions.
GaN FETs produce higher EMI than silicon MOSFETs due to faster edge rates. Estimated: at 100 V/ns vs 20 V/ns for an equivalent silicon MOSFET, conducted EMI above 30 MHz can be 10-20 dB higher. Mitigate with a small common-mode choke on input/output lines, a small R-C snubber across the device, and ensure the PCB has a low-impedance return path for high-frequency switching currents.
تعمیل کی معلومات
RoHS compliant per Nexperia product page. Not AEC-Q100 qualified - this is a discrete power FET primarily intended for industrial SMPS, solar, and OBC applications; AEC-Q100 qualification is not applicable for this product line.
