IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: IAUCN08S7L033ATMA1 ✓ فعالIAUCN08S7L033ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source terminals. Within the power semiconductor taxonomy, the IAUCN08S7L033ATMA1 sits in the N-channel enhancement-mode MOSFET family, which itself belongs to the broader discrete power transistor category used for switching and amplification in power electronics. Its primary system role is synchronous rectification, DC-DC conversion, and high-current load switching in switched-mode power supplies (SMPS), motor drives, and battery management systems.
Key features of this OptiMOS 7 generation device include ultra-low RDS(on) of 3.3 mΩ maximum at VGS = 10 V, a logic-level compatible gate threshold that simplifies driver design, and an automotive-grade qualification per Infineon's AEC-Q100-compatible process flow. The 80 V rating provides ample headroom for 12 V and 24 V automotive bus systems including load-dump transients. The PG-TDSON-8-34 package exposes the drain through a large thermal pad, enabling direct PCB heat spreading and supporting the 118 W (Tc) power dissipation figure.
Technically, the OptiMOS 7 platform uses Infineon's latest trench-cell geometry to minimize both conduction losses (low RDS(on)) and switching losses (low Qg, Qgd). Compared to OptiMOS 5, this generation typically delivers 30-40% lower RDS(on) per die area and improved Figure-of-Merit (FOM = RDS(on) × Qg), which directly translates into cooler operation, higher power density, and better efficiency in high-frequency converters. The low gate charge also enables faster switching transitions when paired with a suitably rated gate driver.
Typical applications for the IAUCN08S7L033ATMA1 include high-current synchronous rectification in 48 V mild-hybrid DC-DC converters, battery protection and hot-swap controllers in 12 V/24 V automotive systems, motor-drive half-bridges for electric power steering (EPS) and water/oil pumps, and high-current USB-PD power delivery sinks. The 80 V rating also makes it suitable for industrial 24 V bus converters and telecom hold-up power stages.
When designing with this MOSFET, pay close attention to gate-drive voltage (10 V recommended for full RDS(on)), PCB layout for the thermal pad (direct soldering to a copper pour of at least 1 sq inch is required at >50 W dissipation), and avalanche energy in unclamped inductive switching. Use a 10 kΩ gate-source pull-down to prevent unwanted turn-on during transients.
This page synthesizes Infineon OptiMOS 7 datasheet specifications, distributor pricing, and pin-compatible drop-in alternatives curated from the XAIPART component database, providing engineering context that goes beyond the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IAUCN08S7L033ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUCN08S7L033ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Qualification, Series.
IAUCN08S7N037GATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IAUCN08S7L042GATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IAUC120N06S5L015ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N027GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC019N04LSGATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPC100N04S51R7ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN08S7L033ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | Automotive OptiMOS 7 |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | 130 A |
| Power Dissipation (PD) at Tc=25°C | 118 W |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) |
| آپریٹنگ درجہ حرارت رینج | -55°C to +175°C (TJ) |
| پیکیج | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) |
| Technology | OptiMOS 7 trench MOSFET |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 (per JEDEC J-STD-020, typical for this package) |
IAUCN08S7L033ATMA1 پن کنفیگریشن
| پن 1 | Source — Source terminal (connected to PCB ground) |
| پن 2 | Source — Source terminal (connected to PCB ground) |
| پن 3 | Source — Source terminal (connected to PCB ground) |
| پن 4 | Gate — Gate drive input (10 V recommended for full RDS(on)) |
| پن 5 | Drain — Drain terminal (high-voltage switching node) |
| پن 6 | Drain — Drain terminal (high-voltage switching node) |
| پن 7 | Drain — Drain terminal (high-voltage switching node) |
| پن 8 | Drain — Drain terminal (high-voltage switching node, also exposed pad) |
محفوظ آپریٹنگ ایریا (estimated from datasheet typical curves)
عام استعمالات
IAUCN08S7L033ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Mild-Hybrid DC-DC Converter, Automotive Battery Hot-Swap Controller, Electric Power Steering (EPS) Motor Drive, Industrial 24V Bus DC-DC Converter, USB-PD High-Current Sink Switch, Telecom Hold-Up Power Stage.
48V Mild-Hybrid DC-DC Converter
The IAUCN08S7L033ATMA1 fits the synchronous-rectifier stage of 48 V mild-hybrid DC-DC converters because its 80 V VDS rating provides comfortable margin over the 48 V bus, while its 3.3 mΩ max RDS(on) at VGS=10V keeps conduction losses low at 20-40 A load currents typical of 1-3 kW converter stages. The PG-TDSON-8-34 (SSO8 5x6 mm²) package exposes the drain pad for direct PCB heatsinking, supporting the 118 W (Tc) dissipation figure during transient load steps. Compared with OptiMOS 5 predecessors, the OptiMOS 7 generation delivers roughly 30-40% lower RDS(on) per die area, which directly translates into cooler operation and higher power density in the converter. Place the MOSFET adjacent to the transformer secondary with a 10 kΩ gate-source pull-down to prevent dv/dt-induced turn-on during the primary-side switching edge. Pair with the Infineon EiceDriver 2ED2106S06F gate driver for optimal switching loss at 100-200 kHz operating frequency.
تجویز کردہ
Automotive Battery Hot-Swap Controller
In 12 V or 24 V automotive battery hot-swap and reverse-battery protection circuits, the IAUCN08S7L033ATMA1 serves as the high-side ORing switch because its 80 V VDS rating absorbs inductive transients and load-dump events that can exceed 35 V on the 12 V bus. The 130 A continuous drain current at Tj supports the inrush currents of large DC loads (ECUs, infotainment, ADAS compute platforms). The 3.3 mΩ RDS(on) limits steady-state conduction loss to roughly 0.5 W at 12 A continuous load, eliminating the need for active cooling in most chassis-mount enclosures. Use a gate-source Zener clamp and a TVS such as the IAUZ40N10S5N130ATMA1 family for transient voltage suppression across the drain-source path. The automotive-grade qualification of the OptiMOS 7 family makes this part suitable for under-hood and body-control applications.
تجویز کردہ
Electric Power Steering (EPS) Motor Drive
The IAUCN08S7L033ATMA1 is well-suited to the three-phase inverter of electric power steering (EPS) and electric water/oil pumps because its 80 V VDS rating provides 3x margin over the 12 V or 24 V supply, while its low 3.3 mΩ RDS(on) keeps the I²R losses in the half-bridge manageable at the 30-80 A phase currents typical of small automotive BLDC drives. The PG-TDSON-8-34 exposed drain pad enables PCB-direct heat removal, which is critical in the confined space of the steering column housing where external heatsinks are impractical. The OptiMOS 7 generation's lower Qg and Qgd reduce switching losses at 20 kHz PWM, reducing motor torque ripple and audible noise. Place gate-drive resistors (10-22 Ω) close to the gate pin to suppress parasitic ringing during the 50-100 ns switching transitions.
تجویز کردہ
Industrial 24V Bus DC-DC Converter
In industrial 24 V bus DC-DC converters (e.g. 24 V to 5 V or 12 V), the IAUCN08S7L033ATMA1 operates as the synchronous rectifier on the secondary side because its 80 V VDS comfortably exceeds the rectified 24 V bus plus voltage spikes from leakage inductance, while its 3.3 mΩ RDS(on) at 10 V VGS keeps efficiency above 96% at 10-20 A loads. The 175°C maximum junction temperature supports operation in sealed industrial enclosures without active cooling. Compared with older OptiMOS 3/5 generations, this OptiMOS 7 part reduces switching losses by approximately 30%, allowing higher switching frequencies (200-500 kHz) and smaller magnetic components. Use the IR2104STRPBF or 2ED2106S06F half-bridge gate driver for bootstrap high-side drive in buck-derived topologies.
تجویز کردہ
USB-PD High-Current Sink Switch
The IAUCN08S7L033ATMA1 functions as the VBUS load switch in USB-PD EPR (Extended Power Range) sinks accepting up to 28 V / 36 V / 48 V at 5 A, where its 80 V VDS provides robust transient protection while its 3.3 mΩ RDS(on) limits full-load drop to roughly 165 mV at 5 A - well within USB-PD cable compensation budgets. The PG-TDSON-8-34 (SSO8 5x6 mm²) package occupies approximately 30 mm² of PCB area, fitting easily inside compact laptop and docking-station enclosures. Drive the gate with a charge pump or bootstrap driver to maintain VGS above 10 V across the full input range. Add a TVS across VBUS for hot-plug surge protection and a 100 kΩ gate-source pull-down to prevent false turn-on during ESD events.
تجویز کردہ
Telecom Hold-Up Power Stage
The IAUCN08S7L033ATMA1 supports telecom 48 V hold-up and ORing applications because its 80 V VDS rating covers the 48 V nominal bus plus transient over-voltages up to 60 V during fault-clearing events. The 3.3 mΩ RDS(on) keeps conduction loss below 1.5 W at 25 A continuous, allowing the ORing MOSFET to operate without a dedicated heatsink in 1U rack-mount equipment. The 175°C maximum junction temperature and automotive-grade qualification provide margin for the elevated ambient temperatures inside sealed telecom enclosures. Use two IAUCN08S7L033ATMA1 in a back-to-back source configuration (sources tied together) for true bidirectional ORing between redundant -48 V feeds, with the gate driven by a dedicated ORing controller such as the IRF1310NSTRLPBF family.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUCN08S7L033ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUCN08S7N037GATMA1 | IAUCN08S7L042GATMA1 | IAUC120N06S5L015ATMA1 | IAUCN04S7N027GATMA1 | BSC019N04LSGATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same | PG-TDSON-8-34 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS Max (V) | 80 | 80 | 80 | 60 | 40 | 40 | 40 |
| RDS(on) Max at VGS=10V (mΩ) | 3.3 | 3.7 | 4.2 | 1.5 | 2.7 | 1.9 | 1.7 |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5/6 | OptiMOS 5 |
| Qualification | Automotive | Automotive | Automotive | Automotive | Automotive | Automotive | Automotive |
اہم امتیازی خصوصیات
- Lowest RDS(on) in 80V automotive N-MOSFET class at 80V VDS (بمقابلہIAUCN08S7N037GATMA1)
- Higher VDS rating for 48 V bus applications (بمقابلہBSC019N04LSGATMA1)
- OptiMOS 7 generation Figure-of-Merit advantage (بمقابلہIPC100N04S51R7ATMA1)
ڈیزائن نوٹس
Estimated: at 80 V VDS, 30 A continuous load, and 50% duty cycle, the IAUCN08S7L033ATMA1 dissipates roughly 1.5 W (P = I² × R × D = 30² × 0.0033 × 0.5). The PG-TDSON-8-34 package has a typical theta_JA of approximately 50 C/W on a 1 oz copper 1 sq inch pad, yielding a 75°C junction temperature rise above 25°C ambient - within the 175°C Tj limit. For sustained loads above 50 A, expand the PCB copper area to 4+ sq inches or add an exposed thermal pad on the bottom of the board.
Solder the exposed drain pad (pins 5-8) directly to a continuous copper pour of at least 1 sq inch on the top layer, with thermal vias (0.3 mm drill, 1 mm pitch) connecting to inner-layer copper spreads. Place the gate-drive loop (gate resistor, gate-source pull-down, gate driver output) within 10 mm of the gate pin to minimize parasitic inductance, which causes gate-overshoot and ringing during fast switching transitions at 100+ kHz.
Do not exceed the maximum VGS rating of ±20 V (typical for OptiMOS 7) - gate over-voltage destroys the thin gate oxide. Add a 10 kΩ gate-source pull-down resistor to prevent dv/dt-induced turn-on during high-side switching transients. In bridge topologies, never operate the body diode beyond its reverse-recovery rating; place a small RC snubber (10 Ω + 1 nF) across drain-source if ringing exceeds 30% of VDS.
Keep the source-return path (from source pin to gate-driver ground) as short as possible - a Kelvin-source connection (pin 1 routed directly to gate-driver ground, separate from power-source return) eliminates source-inductance-induced gate-voltage degradation. Place input bypass capacitors (10-22 µF ceramic + 100 µF electrolytic) within 5 mm of the drain pin to suppress switching-node ringing and voltage overshoot.
تعمیل کی معلومات
Automotive grade per Infineon OptiMOS 7 datasheet header. RoHS and REACH compliant per Infineon product page. Halogen-free per JEDEC JS709B. AEC-Q100 qualified - suitable for automotive under-hood and body-control applications.
