IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon
MPN: IAUZ40N06S5N050ATMA1 ✓ فعالIAUZ40N06S5N050ATMA1 جائزہ
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in electronic circuits. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET technology, optimized for 60 V systems to deliver lower conduction loss, faster switching, and reduced gate charge versus previous generations. Within the broader taxonomy, this part is an N-channel enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor -> power management component.
Key specifications include 5 mΩ typical RDS(on) at VGS=10 V, a maximum drain current (ID) of 40 A at TC, 71 W maximum power dissipation, and a gate threshold voltage typically around 1.7 V. The OptiMOS 5 cell structure provides exceptionally low QG and QGD, enabling high-frequency switching (>1 MHz) with minimized driver losses. The PG-TSDSON-8 package with exposed pad achieves low thermal resistance (~1.2 C/W RthJC) suitable for high-current surface-mount designs.
Typical applications include 48 V automotive systems (mild-hybrid DC-DC converters), secondary-side synchronous rectification in isolated DC-DC topologies, BLDC motor drive H-bridges, and high-current load switching in power distribution units. The combination of low RDS(on) and small footprint enables higher power density designs.
When designing with this device, ensure the gate driver can supply sufficient peak current (>1 A) to charge the input capacitance at the target switching frequency. Use Kelvin-source PCB layout when possible to minimize source-inductance-induced ringing, and keep the gate-loop area small to control EMI.
کے لیے ڈراپ اِن متبادل IAUZ40N06S5N050ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUZ40N06S5N050ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Automotive Qualification, Configuration.
IAUZ40N06S5L050ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0993NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC011N06LM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC034N06NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N06S5L073ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →VBQF1606
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IAUZ40N06S5N050ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, TC) | 40 A |
| On-State Resistance (RDS(on), typ) | 5 mΩ at VGS=10 V |
| Maximum Power Dissipation (PD) | 71 W |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V |
| Technology | OptiMOS 5 (Trench) |
| Channel Type | N-Channel Enhancement Mode |
| پیکیج | PG-TSDSON-8-33 (3.3 x 3.3 mm) |
| پن کی تعداد | 8 |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55C to +175C |
| Automotive Qualification | AEC-Q101 Qualified |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 |
| Packaging | Tape & Reel |
IAUZ40N06S5N050ATMA1 پن کنفیگریشن
| پن 1 | Source — Source connection (pin 1) |
| پن 2 | Source — Source connection (pin 2) |
| پن 3 | Source — Source connection (pin 3) |
| پن 4 | Gate — Gate drive input |
| پن 5 | Source — Source connection (pin 5) |
| پن 6 | Source — Source connection (pin 6) |
| پن 7 | Source — Source connection (pin 7) |
| پن 8 | Drain (EP) — Drain connection via exposed thermal pad |
محفوظ آپریٹنگ ایریا (estimated from RDS(on) and PD)
عام استعمالات
IAUZ40N06S5N050ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Mild-Hybrid DC-DC Converters, Synchronous Rectification in Isolated DC-DC, BLDC Motor Drive H-Bridge, High-Current Load Switching (PDU), Battery Management System (BMS) Protection, USB-PD / High-Current Type-C Power Stages.
48V Mild-Hybrid DC-DC Converters
The IAUZ40N06S5N050ATMA1 is ideal for the 12 V secondary-side synchronous rectification stage of 48 V mild-hybrid DC-DC converters. Its 5 mΩ RDS(on) at VGS=10 V minimizes conduction losses at the high secondary-side currents (20-40 A typical), while the 60 V VDS rating provides adequate margin above the 48 V nominal bus. AEC-Q101 qualification meets automotive reliability requirements including temperature cycling, humidity bias, and HTRB. The compact PG-TSDSON-8-33 (3.3 x 3.3 mm) footprint enables high power density on the secondary-side PCB. Placed as the low-side synchronous FET in a buck topology, it pairs with a primary-side 100 V or 80 V MOSFET for an isolated 48 V-to-12 V converter delivering >500 W with peak efficiency above 96%.
تجویز کردہ
Synchronous Rectification in Isolated DC-DC
The IAUZ40N06S5N050ATMA1 serves as a secondary-side synchronous rectifier in isolated 48 V-to-12 V or 24 V-to-5 V DC-DC converter modules, where its 5 mΩ RDS(on) directly improves full-load efficiency versus Schottky-diode rectification. The 60 V VDS rating covers 48 V bus transients, and the OptiMOS 5 low QGD enables high-frequency (>200 kHz) operation for smaller magnetics. AEC-Q101 qualification allows deployment in automotive-grade isolated converters for traction or auxiliary systems. Compared with a 100 V Schottky rectifier, the IAUZ40N06S5N050ATMA1 typically reduces rectifier losses by 40-60%, directly cutting heatsink requirements and enabling a fully SMD power stage.
تجویز کردہ
BLDC Motor Drive H-Bridge
In automotive BLDC motor drives (water pumps, oil pumps, fans, HVAC blowers), the IAUZ40N06S5N050ATMA1 forms the low-side or high-side switches of a 3-phase H-bridge powered from a 12 V or 24 V bus. Its 5 mΩ RDS(on) limits conduction loss at motor peak currents (often 20-30 A per phase), reducing heatsink mass versus higher-RDS(on) parts. The OptiMOS 5 technology's low gate charge allows PWM frequencies above 20 kHz (above audible range) for quieter motor operation. AEC-Q101 qualification and the -55C to +175C operating junction temperature range support under-hood automotive environments.
تجویز کردہ
High-Current Load Switching (PDU)
The IAUZ40N06S5N050ATMA1 acts as a high-side or low-side load switch in automotive Power Distribution Units (PDUs), driving resistive or inductive loads up to 40 A continuous. Its 5 mΩ RDS(on) keeps voltage drop across the switch below 200 mV at full load (40 A × 5 mΩ), preserving supply margin for downstream electronics. The PG-TSDSON-8-33 footprint integrates easily into compact PDU modules. AEC-Q101 qualification and 175C junction temperature rating support under-hood deployment near engine ECUs.
تجویز کردہ
Battery Management System (BMS) Protection
Within a 48 V lithium-ion Battery Management System, the IAUZ40N06S5N050ATMA1 can serve as the high-current pre-charge or discharge MOSFET in series with each cell stack. With 5 mΩ RDS(on) and 60 V VDS rating, it handles pack voltages up to 48 V nominal and peak discharge currents of 40 A per device (paralleling multiple devices enables higher pack currents). AEC-Q101 ensures reliability across the battery's wide temperature range. The exposed-pad PG-TSDSON-8-33 package enables direct PCB cooling, simplifying BMS mechanical design.
تجویز کردہ
USB-PD / High-Current Type-C Power Stages
For automotive USB-PD 3.1 ports delivering up to 240 W (48 V at 5 A), the IAUZ40N06S5N050ATMA1 functions as the synchronous buck or boost switch on the secondary side of the isolating transformer. Its 5 mΩ RDS(on) and 60 V rating comfortably handle 48 V USB-PD Extended Power Range (EPR) voltages. AEC-Q101 qualification ensures compliance with OEM automotive infotainment reliability targets, while the compact 3.3 x 3.3 mm footprint enables dense multi-port USB-PD hub designs.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUZ40N06S5N050ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUZ40N06S5L050ATMA1 | BSC0993NDATMA1 | ISC011N06LM5ATMA1 | IAUC60N06S5L073ATMA1 | VBQF1606 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TSDSON-8-33 | PG-TSDSON-8-33 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8-33 - same | DFN8 (3x3) - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS 5 | OptiMOS 5 | Trench |
اہم امتیازی خصوصیات
- Industry-leading FOM (RDS(on) × QG) in 60 V class (بمقابلہISC011N06LM5ATMA1)
- AEC-Q101 automotive qualification with -55C to +175C TJ range (بمقابلہVBQF1606 (cross-brand))
- Drop-in compatible with PG-TSDSON-8-33 family footprint (بمقابلہIAUZ40N06S5L050ATMA1 (same brand))
ڈیزائن نوٹس
Estimated: at ID=20 A continuous with RDS(on)=5 mΩ at TJ=25C, conduction loss is approximately 2 W; thermal resistance RthJA for a 1 oz copper PCB with minimal copper area is ~50 C/W, so junction temperature rise is ~100C. For continuous 30-40 A operation, use a 4-layer PCB with at least 1 square inch of top-side copper and thermal vias under the exposed pad to keep RthJA below 25 C/W. Always verify junction temperature under worst-case ambient and load conditions.
Use a Kelvin-source connection (separate gate-drive return trace directly to the source pin) to minimize source-inductance-induced gate ringing, which can cause false triggering at high di/dt. Keep the gate-loop area (gate driver output, gate resistor, gate pin, source pin back to driver ground) as small as possible. Place a 10-100 Ω gate resistor close to the gate pin to damp parasitic oscillations, especially when using a non-isolated gate driver.
Solder the exposed thermal pad (EP) of the PG-TSDSON-8-33 to a PCB land pattern with an array of thermal vias (typically 9-16 vias of 0.3 mm diameter) for direct bottom-side cooling. The EP is the drain connection; provide sufficient copper to carry the continuous drain current and to spread heat. Avoid routing sensitive analog signals directly under the MOSFET to prevent switching-noise coupling.
Do not exceed the maximum gate-source voltage (typically ±20 V for OptiMOS 5); exceeding VGS_max can permanently damage the gate oxide. Ensure the gate driver can supply sufficient peak current (>1 A) to charge the input capacitance QG at the target switching frequency; slow gate drive increases switching loss and EMI. Verify the body diode reverse-recovery behavior before using the part in bridge topologies, and consider adding a small RC snubber if dv/dt-related ringing is observed.
تعمیل کی معلومات
AEC-Q101 (automotive discrete semiconductor standard, equivalent grade to AEC-Q100 for discretes) qualified. RoHS and REACH compliant per Infineon product page.
