IPT004N03LATMA1 - 30V 300A 0.4mΩ OptiMOS N-MOSFET | Infineon
MPN: IPT004N03LATMA1 ✓ فعالIPT004N03LATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically a MOS capacitor) to modulate majority-carrier conduction between its drain and source terminals. In the broader power-semiconductor taxonomy, this part sits within the discrete MOSFET family, which is itself a subset of power transistors used for DC-DC conversion, motor drive, and load switching. The OptiMOS platform specifically targets very low RDS(on) per unit silicon area and low gate charge, optimizing it for high-frequency switching power stages where conduction and switching losses both matter.
Key features of the IPT004N03LATMA1 include a maximum VDS of 30 V, a continuous ID of 300 A at 25 °C case temperature, pulsed current capability suitable for inrush and short-circuit events, and a total power dissipation of 3.8 W on a 1 in² FR4 PCB (Ta) rising to 300 W when the case is properly cooled. The PG-HSOF-8-1 package exposes the drain on the bottom of the package, which Infineon explicitly designed for forklift, light electric vehicle, telecom point-of-load, and high-current OR-ing applications. Gate threshold is specified in the logic-level family, simplifying direct MCU or hot-swap-controller drive.
The architecture leverages OptiMOS 5-generation cell design with a low-resistance leadless leadframe; the source-down connection shortens the high-current loop on the PCB, reducing parasitic inductance that would otherwise limit switching speed and create voltage overshoot. A low Qg × RDS(on) figure-of-merit makes the device efficient at both PWM and synchronous-rectification duty cycles.
Typical applications include 24 V forklift traction inverters, light electric vehicle (LEV) motor controllers, telecom point-of-load (POL) converters up to ~30 A per phase, high-current e-fuses, and battery protection OR-ing FETs. The combination of 300 A DC rating and a source-down footprint also makes it attractive as a hot-swap controller's main pass element in 24 V/48 V server and storage backplanes.
When designing with this MOSFET, ensure the PCB top-side copper area is sized to the application's continuous current - a 1 in² copper pour at 1 oz copper supports roughly 3.8 W steady state without active cooling. For continuous operation near 200 A or more, a forced-air or cold-plate solution is recommended to keep Tj below 150 °C.
This page synthesizes distributor pricing, drop-in and cross-brand equivalents from the OptiMOS family, and practical design notes that go beyond a single datasheet.
کے لیے ڈراپ اِن متبادل IPT004N03LATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPT004N03LATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Drain-to-Source Voltage (VDS), Operating Temperature Range, Package.
IPT012N03L
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPT004N03L-Q1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPT006N03L
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPT008N03L
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC050N04LSGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7L015ATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPT004N03LATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A |
| On-Resistance RDS(on), typical | 0.4 mΩ (typ) |
| Power Dissipation (Ta, 1in² PCB) | 3.8 W |
| پاور ڈسپیشن (TC=25°C) | 300 W |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +150 °C (Tj) |
| پیکیج | PG-HSOF-8-1 (TO-Leadless, source-down) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 8 |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 |
IPT004N03LATMA1 پن کنفیگریشن
| پن 1 | Source — Source terminal (logic return / load return) |
| پن 2 | Source — Source terminal (logic return / load return) |
| پن 3 | Source — Source terminal (logic return / load return) |
| پن 4 | Gate — Gate terminal (logic-level drive) |
| پن 5 | Source — Source terminal (logic return / load return) |
| پن 6 | Source — Source terminal (logic return / load return) |
| پن 7 | Source — Source terminal (logic return / load return) |
| پن 8 | Source — Source terminal (logic return / load return) |
محفوظ آپریٹنگ ایریا (DC, Tc=25°C)
عام استعمالات
IPT004N03LATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 24 V Forklift Traction Inverter, Light Electric Vehicle (LEV) Motor Controller, Telecom 24 V Point-of-Load (POL) Converter, 24 V / 48 V Battery OR-ing and E-Fuse, Hot-Swap Controller Pass Element, Industrial 24 V Braking and Resistive Load Switch.
24 V Forklift Traction Inverter
The IPT004N03LATMA1 is well matched to 24 V forklift traction inverter half-bridge positions because its 30 V VDS comfortably covers a 24 V nominal bus plus inductive transient spikes, while its 300 A continuous drain rating (Tc=25 °C) and 0.4 mΩ typical RDS(on) keep conduction loss under 10 W at 150 A phase current. According to the Infineon datasheet the PG-HSOF-8-1 source-down footprint lets the FET sit directly on the bus-bar copper, lowering the high-current loop inductance versus TO-220 or TO-263 packages. For a typical 5 kW traction inverter the IPT004N03L pair in each phase dissipates about 9 W (3 × 3 W) - manageable on the PCB with proper copper area.
تجویز کردہ
Light Electric Vehicle (LEV) Motor Controller
E-bikes, e-scooters, and small LEVs typically run on 24-36 V battery packs at 50-150 A peak phase current - a regime where the IPT004N03LATMA1's 0.4 mΩ typical RDS(on) and 300 A continuous rating provide ample thermal margin. Placed in a three-phase inverter the IPT004N03L keeps per-FET conduction loss under 6 W at 100 A and 25 °C, allowing fan-less operation in a sealed IP-rated housing. The source-down PG-HSOF-8-1 package also simplifies thermal interface design: a single thermal pad conducts heat directly into the chassis or aluminum enclosure. Logic-level gate threshold permits direct MCU PWM drive through a small gate-driver IC.
تجویز کردہ
Telecom 24 V Point-of-Load (POL) Converter
In 24 V distributed-power telecom architectures, point-of-load converters stepping 24 V down to 1-5 V at 20-50 A benefit from the IPT004N03LATMA1's low RDS(on) × Qg figure-of-merit. Although the part is over-spec for a single POL phase, it shines as a high-current OR-ing FET or as the input-side switch of a multi-phase buck where one FET carries 100 A+ during peak load. The 30 V VDS provides 25% headroom over a nominal 24 V rail, comfortably absorbing transient excursions during hot-swap events. Source-down mounting keeps the switching loop tight, reducing voltage overshoot that would otherwise require a snubber.
تجویز کردہ
24 V / 48 V Battery OR-ing and E-Fuse
The IPT004N03LATMA1 is an excellent OR-ing FET and e-fuse pass element for 24 V battery banks and 48 V server backplanes. Its 0.4 mΩ typical RDS(on) means a 100 A OR-ing path dissipates only 4 W - small enough for the 1 in² PCB copper area rating of 3.8 W Ta plus a small heat-spreader. Logic-level VGS(th) permits direct drive by hot-swap controllers such as the LTC4218 or ADM1176 without a discrete gate drive. The 300 A continuous rating provides 3× headroom over typical 100 A OR-ing service, ensuring long-term reliability even under sustained fault-current let-through.
تجویز کردہ
Hot-Swap Controller Pass Element
For 24 V distributed-power hot-swap slots (storage arrays, network switches, modular servers), the IPT004N03LATMA1 acts as the main pass MOSFET, with the hot-swap controller IC regulating gate ramp to limit inrush. The 30 V VDS, 300 A continuous ID, and 0.4 mΩ typical RDS(on) deliver an inrush-safe, low-loss path - critical when the slot must support 100-150 A steady-state load. According to the Infineon datasheet, the PG-HSOF-8-1 source-down footprint simplifies the PCB layout by eliminating the drain tab via, which is a common failure point under repeated thermal cycling.
تجویز کردہ
Industrial 24 V Braking and Resistive Load Switch
Industrial braking resistors and DC loads on 24 V bus systems demand a robust, low-loss switching element. The IPT004N03LATMA1's 300 A continuous rating supports even very large braking resistors at 24 V (peak power > 7 kW), and its 0.4 mΩ typical RDS(on) keeps dissipation under 5 W per switch at 100 A. The source-down PG-HSOF-8-1 footprint also enables direct mounting to an aluminum heat-spreader plate, important for enclosed industrial cabinets where airflow is limited. Logic-level gate drive permits direct control from a 3.3 V or 5 V MCU GPIO through a small gate resistor.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPT004N03LATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPT012N03L | IPT004N03L-Q1 | IPT006N03L | BSC050N04LSGATMA1 | IAUCN04S7L015ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (TO-Leadless, source-down) | PG-HSOF-8-1 (TO-Leadless) - same | PG-HSOF-8-1 (TO-Leadless) - same | PG-HSOF-8-1 (TO-Leadless) - same | PG-HSOF-8-1 (TO-Leadless) - same | PG-HSOF-8-1 (TO-Leadless) - same |
| VDS (max) | 30 V | 30 V | 30 V | 30 V | 40 V | 40 V |
| RDS(on) (typ at VGS=10V) | 0.4 mΩ | ~1.2 mΩ | 0.4 mΩ | ~0.6 mΩ | ~1.5 mΩ | ~1.5 mΩ |
| Automotive Grade (AEC-Q100) | Not qualified (standard grade) | Not qualified | AEC-Q100 qualified | Not qualified | Not qualified | Not qualified |
| Power Dissipation (Ta, 1 in² PCB) | 3.8 W | 3.8 W (same package) | 3.8 W (same package) | 3.8 W (same package) | 3.8 W (same package) | 3.8 W (same package) |
| Primary Application | Forklift / LEV / 24 V POL / OR-ing | Lower-current 24 V switching | Automotive 24 V traction / OR-ing | Mid-current 24 V switching | Synchronous rectification / general 40 V | Compact 40 V synchronous rectification |
اہم امتیازی خصوصیات
- Ultra-low RDS(on) of 0.4 mΩ typical in a SMD source-down package (بمقابلہBSC050N04LSGATMA1)
- 300 A continuous drain current at Tc = 25 °C (بمقابلہIPT012N03L)
- Source-down PG-HSOF-8-1 package optimized for direct PCB bus-bar mounting (بمقابلہCompetitor TO-263 / D2PAK source-up parts)
ڈیزائن نوٹس
Estimated thermal analysis: at ID=150 A and RDS(on)=0.4 mΩ typ (rising to ~0.7 mΩ at Tj=125 °C), per-FET conduction loss is approximately 16 W. Mounted on a 1 in² 1 oz copper pour the PG-HSOF-8-1 package has a thermal resistance of roughly 33 °C/W to ambient, giving a 528 °C junction rise - clearly above the 150 °C rating. Therefore the IPT004N03LATMA1 MUST be mounted on a substantial copper area (>= 4 in²) or on a cold plate / aluminum chassis for continuous >50 A operation. Always check the SOA curve in the datasheet and ensure operating points stay within it.
The PG-HSOF-8-1 (TO-Leadless) package is source-down: pins 1-3 and 5-8 are source, pin 4 is gate, and the drain tab forms the bottom of the package. Use Infineon's recommended land pattern exactly - in particular, the source-pad vias should be a tight array to minimize parasitic source inductance, and the drain tab should be soldered to a continuous copper pour that doubles as both electrical return and thermal spreader. Avoid routing high-current tracks on the top side; the PG-HSOF-8-1 is designed so the bottom copper IS the high-current path.
Do not exceed VGS = ±20 V absolute maximum - logic-level drive (VGS = 4.5-10 V) is sufficient for full enhancement, and pushing VGS above 12 V only marginally improves RDS(on) while accelerating gate-oxide aging. Ensure the gate-source path includes a pull-down resistor (10-100 kΩ) so the FET stays off if the controller is tri-stated during power-up. For switching applications above 50 kHz, place a small RC snubber (R=10 Ω, C=1 nF) across the drain-source to dampen ringing from the PG-HSOF-8-1's source-lead inductance.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Standard (non-automotive) grade; for AEC-Q100, select IPT004N03L-Q1 in the same package.
