IPT004N03LATMA1 - 30V 300A 0.4mΩ OptiMOS N-MOSFET | Infineon
MPN: IPT004N03LATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.85 | $4.85 |
| 10 | $4.32 | $43.20 |
| 100 | $3.78 | $378.00 |
| 500 | $3.31 | $1,655.00 |
| 1,000 | $2.89 | $2,890.00 |
IPT004N03LATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically a MOS capacitor) to modulate majority-carrier conduction between its drain and source terminals. In the broader power-semiconductor taxonomy, this part sits within the discrete MOSFET family, which is itself a subset of power transistors used for DC-DC conversion, motor drive, and load switching. The OptiMOS platform specifically targets very low RDS(on) per unit silicon area and low gate charge, optimizing it for high-frequency switching power stages where conduction and switching losses both matter.
Key features of the IPT004N03LATMA1 include a maximum VDS of 30 V, a continuous ID of 300 A at 25 °C case temperature, pulsed current capability suitable for inrush and short-circuit events, and a total power dissipation of 3.8 W on a 1 in² FR4 PCB (Ta) rising to 300 W when the case is properly cooled. The PG-HSOF-8-1 package exposes the drain on the bottom of the package, which Infineon explicitly designed for forklift, light electric vehicle, telecom point-of-load, and high-current OR-ing applications. Gate threshold is specified in the logic-level family, simplifying direct MCU or hot-swap-controller drive.
The architecture leverages OptiMOS 5-generation cell design with a low-resistance leadless leadframe; the source-down connection shortens the high-current loop on the PCB, reducing parasitic inductance that would otherwise limit switching speed and create voltage overshoot. A low Qg × RDS(on) figure-of-merit makes the device efficient at both PWM and synchronous-rectification duty cycles.
Typical applications include 24 V forklift traction inverters, light electric vehicle (LEV) motor controllers, telecom point-of-load (POL) converters up to ~30 A per phase, high-current e-fuses, and battery protection OR-ing FETs. The combination of 300 A DC rating and a source-down footprint also makes it attractive as a hot-swap controller's main pass element in 24 V/48 V server and storage backplanes.
When designing with this MOSFET, ensure the PCB top-side copper area is sized to the application's continuous current - a 1 in² copper pour at 1 oz copper supports roughly 3.8 W steady state without active cooling. For continuous operation near 200 A or more, a forced-air or cold-plate solution is recommended to keep Tj below 150 °C.
This page synthesizes distributor pricing, drop-in and cross-brand equivalents from the OptiMOS family, and practical design notes that go beyond a single datasheet.
Drop-in alternatives for IPT004N03LATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPT004N03LATMA1 (same form factor and footprint) — differing in Drain-to-Source Voltage (VDS), Operating Temperature Range, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPT012N03L
✅ Drop-In📋 Reference alternative (not in catalog)
IPT004N03L-Q1
✅ Drop-In📋 Reference alternative (not in catalog)
IPT006N03L
✅ Drop-In📋 Reference alternative (not in catalog)
IPT008N03L
✅ Drop-In📋 Reference alternative (not in catalog)
BSC050N04LSGATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →IAUCN04S7L015ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPT004N03LATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS |
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A |
| On-Resistance RDS(on), typical | 0.4 mΩ (typ) |
| Power Dissipation (Ta, 1in² PCB) | 3.8 W |
| Power Dissipation (Tc=25°C) | 300 W |
| Operating Temperature Range | -55 °C to +150 °C (Tj) |
| Package | PG-HSOF-8-1 (TO-Leadless, source-down) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| RoHS Status | Compliant |
| MSL Level | 1 |
IPT004N03LATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (logic return / load return) |
| Pin 2 | Source — Source terminal (logic return / load return) |
| Pin 3 | Source — Source terminal (logic return / load return) |
| Pin 4 | Gate — Gate terminal (logic-level drive) |
| Pin 5 | Source — Source terminal (logic return / load return) |
| Pin 6 | Source — Source terminal (logic return / load return) |
| Pin 7 | Source — Source terminal (logic return / load return) |
| Pin 8 | Source — Source terminal (logic return / load return) |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IPT004N03LATMA1 is suitable for 6 applications: 24 V Forklift Traction Inverter, Light Electric Vehicle (LEV) Motor Controller, Telecom 24 V Point-of-Load (POL) Converter, 24 V / 48 V Battery OR-ing and E-Fuse, Hot-Swap Controller Pass Element, Industrial 24 V Braking and Resistive Load Switch.
24 V Forklift Traction Inverter
The IPT004N03LATMA1 is well matched to 24 V forklift traction inverter half-bridge positions because its 30 V VDS comfortably covers a 24 V nominal bus plus inductive transient spikes, while its 300 A continuous drain rating (Tc=25 °C) and 0.4 mΩ typical RDS(on) keep conduction loss under 10 W at 150 A phase current. According to the Infineon datasheet the PG-HSOF-8-1 source-down footprint lets the FET sit directly on the bus-bar copper, lowering the high-current loop inductance versus TO-220 or TO-263 packages. For a typical 5 kW traction inverter the IPT004N03L pair in each phase dissipates about 9 W (3 × 3 W) - manageable on the PCB with proper copper area.
Recommended
Light Electric Vehicle (LEV) Motor Controller
E-bikes, e-scooters, and small LEVs typically run on 24-36 V battery packs at 50-150 A peak phase current - a regime where the IPT004N03LATMA1's 0.4 mΩ typical RDS(on) and 300 A continuous rating provide ample thermal margin. Placed in a three-phase inverter the IPT004N03L keeps per-FET conduction loss under 6 W at 100 A and 25 °C, allowing fan-less operation in a sealed IP-rated housing. The source-down PG-HSOF-8-1 package also simplifies thermal interface design: a single thermal pad conducts heat directly into the chassis or aluminum enclosure. Logic-level gate threshold permits direct MCU PWM drive through a small gate-driver IC.
Recommended
Telecom 24 V Point-of-Load (POL) Converter
In 24 V distributed-power telecom architectures, point-of-load converters stepping 24 V down to 1-5 V at 20-50 A benefit from the IPT004N03LATMA1's low RDS(on) × Qg figure-of-merit. Although the part is over-spec for a single POL phase, it shines as a high-current OR-ing FET or as the input-side switch of a multi-phase buck where one FET carries 100 A+ during peak load. The 30 V VDS provides 25% headroom over a nominal 24 V rail, comfortably absorbing transient excursions during hot-swap events. Source-down mounting keeps the switching loop tight, reducing voltage overshoot that would otherwise require a snubber.
Recommended
24 V / 48 V Battery OR-ing and E-Fuse
The IPT004N03LATMA1 is an excellent OR-ing FET and e-fuse pass element for 24 V battery banks and 48 V server backplanes. Its 0.4 mΩ typical RDS(on) means a 100 A OR-ing path dissipates only 4 W - small enough for the 1 in² PCB copper area rating of 3.8 W Ta plus a small heat-spreader. Logic-level VGS(th) permits direct drive by hot-swap controllers such as the LTC4218 or ADM1176 without a discrete gate drive. The 300 A continuous rating provides 3× headroom over typical 100 A OR-ing service, ensuring long-term reliability even under sustained fault-current let-through.
Recommended
Hot-Swap Controller Pass Element
For 24 V distributed-power hot-swap slots (storage arrays, network switches, modular servers), the IPT004N03LATMA1 acts as the main pass MOSFET, with the hot-swap controller IC regulating gate ramp to limit inrush. The 30 V VDS, 300 A continuous ID, and 0.4 mΩ typical RDS(on) deliver an inrush-safe, low-loss path - critical when the slot must support 100-150 A steady-state load. According to the Infineon datasheet, the PG-HSOF-8-1 source-down footprint simplifies the PCB layout by eliminating the drain tab via, which is a common failure point under repeated thermal cycling.
Recommended
Industrial 24 V Braking and Resistive Load Switch
Industrial braking resistors and DC loads on 24 V bus systems demand a robust, low-loss switching element. The IPT004N03LATMA1's 300 A continuous rating supports even very large braking resistors at 24 V (peak power > 7 kW), and its 0.4 mΩ typical RDS(on) keeps dissipation under 5 W per switch at 100 A. The source-down PG-HSOF-8-1 footprint also enables direct mounting to an aluminum heat-spreader plate, important for enclosed industrial cabinets where airflow is limited. Logic-level gate drive permits direct control from a 3.3 V or 5 V MCU GPIO through a small gate resistor.
Recommended
Recommended Products Summary
Engineering reference data for IPT004N03LATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPT012N03L | IPT004N03L-Q1 | IPT006N03L | BSC050N04LSGATMA1 | IAUCN04S7L015ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (TO-Leadless, source-down) | PG-HSOF-8-1 (TO-Leadless) - same | PG-HSOF-8-1 (TO-Leadless) - same | PG-HSOF-8-1 (TO-Leadless) - same | PG-HSOF-8-1 (TO-Leadless) - same | PG-HSOF-8-1 (TO-Leadless) - same |
| VDS (max) | 30 V | 30 V | 30 V | 30 V | 40 V | 40 V |
| RDS(on) (typ at VGS=10V) | 0.4 mΩ | ~1.2 mΩ | 0.4 mΩ | ~0.6 mΩ | ~1.5 mΩ | ~1.5 mΩ |
| Automotive Grade (AEC-Q100) | Not qualified (standard grade) | Not qualified | AEC-Q100 qualified | Not qualified | Not qualified | Not qualified |
| Power Dissipation (Ta, 1 in² PCB) | 3.8 W | 3.8 W (same package) | 3.8 W (same package) | 3.8 W (same package) | 3.8 W (same package) | 3.8 W (same package) |
| Primary Application | Forklift / LEV / 24 V POL / OR-ing | Lower-current 24 V switching | Automotive 24 V traction / OR-ing | Mid-current 24 V switching | Synchronous rectification / general 40 V | Compact 40 V synchronous rectification |
Key Differentiators
- Ultra-low RDS(on) of 0.4 mΩ typical in a SMD source-down package (vs BSC050N04LSGATMA1)
- 300 A continuous drain current at Tc = 25 °C (vs IPT012N03L)
- Source-down PG-HSOF-8-1 package optimized for direct PCB bus-bar mounting (vs Competitor TO-263 / D2PAK source-up parts)
Design Notes
Estimated thermal analysis: at ID=150 A and RDS(on)=0.4 mΩ typ (rising to ~0.7 mΩ at Tj=125 °C), per-FET conduction loss is approximately 16 W. Mounted on a 1 in² 1 oz copper pour the PG-HSOF-8-1 package has a thermal resistance of roughly 33 °C/W to ambient, giving a 528 °C junction rise - clearly above the 150 °C rating. Therefore the IPT004N03LATMA1 MUST be mounted on a substantial copper area (>= 4 in²) or on a cold plate / aluminum chassis for continuous >50 A operation. Always check the SOA curve in the datasheet and ensure operating points stay within it.
The PG-HSOF-8-1 (TO-Leadless) package is source-down: pins 1-3 and 5-8 are source, pin 4 is gate, and the drain tab forms the bottom of the package. Use Infineon's recommended land pattern exactly - in particular, the source-pad vias should be a tight array to minimize parasitic source inductance, and the drain tab should be soldered to a continuous copper pour that doubles as both electrical return and thermal spreader. Avoid routing high-current tracks on the top side; the PG-HSOF-8-1 is designed so the bottom copper IS the high-current path.
Do not exceed VGS = ±20 V absolute maximum - logic-level drive (VGS = 4.5-10 V) is sufficient for full enhancement, and pushing VGS above 12 V only marginally improves RDS(on) while accelerating gate-oxide aging. Ensure the gate-source path includes a pull-down resistor (10-100 kΩ) so the FET stays off if the controller is tri-stated during power-up. For switching applications above 50 kHz, place a small RC snubber (R=10 Ω, C=1 nF) across the drain-source to dampen ringing from the PG-HSOF-8-1's source-lead inductance.
Compliance Information
RoHS and REACH compliant per Infineon product page. Standard (non-automotive) grade; for AEC-Q100, select IPT004N03L-Q1 in the same package.
