IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: IPTC039N15NM5ATMA1 ✓ فعالIPTC039N15NM5ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used as the active element in switching power supplies, motor drives, and load switching. The N-channel variant conducts when the gate is pulled high relative to the source. MOSFETs sit within the power-management IC hierarchy as discrete semiconductor switches, complementing gate-driver ICs (such as the IR2109SPBF and IRSM808-105MH), DC-DC controllers, and protection supervisors in a typical power-conversion block.
Key features include low RDS(on) of 3.9 mOhm at VGS = 10 V, optimized switching performance via 74 nC typical Qg, and 319 W power dissipation capability at TC = 25 C. The PG-HDSOP-16-2 package uses top-side cooling for direct attachment to thermal interfaces, which is critical in compact assemblies where PCB-bottom copper alone cannot dissipate the heat. The die is qualified for high-reliability switching converters operating at switching frequencies from 50 kHz to 1 MHz.
The IPTC039N15NM5 utilizes Infineon's OptiMOS 5 trench technology, balancing low figure-of-merit (FOM = RDS(on) x Qg) for hard-switched topologies such as synchronous rectification, half-bridge, and full-bridge converters. Low FOM directly translates into higher converter efficiency at fixed switching frequency, or higher frequency operation at fixed efficiency.
Typical applications include e-vehicle traction inverters and onboard chargers, cordless power-tool motor drives, industrial SMPS synchronous rectifiers, and 48 V mild-hybrid DC-DC converters. The 150 V rating provides 25-30% headroom above the 100-120 V DC-link rails common in 48 V automotive systems.
When designing with this device, maintain VGS drive above 10 V for full RDS(on) rating and ensure the gate-driver can source/sink the peak gate current required by the 74 nC Qg. The top-side cooling pad must be soldered to a thermal spreader for full 319 W dissipation at TC = 25 C.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, enabling faster component selection and second-source qualification for engineers designing high-current 150 V power stages.
کے لیے ڈراپ اِن متبادل IPTC039N15NM5ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPTC039N15NM5ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Package, Operating Temperature Range, Series, Drain-Source Voltage (VDS).
IPTC039N15NM5
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC076N04NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD65R380E6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE220N15NM5CGSCATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF1310NSTRLPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPTC039N15NM5ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Ta | 21 A |
| Continuous Drain Current (ID) at Tc | 190 A |
| Power Dissipation (PD) at Ta | 3.8 W |
| Power Dissipation (PD) at Tc | 319 W |
| On-Resistance RDS(on) typical | 3.9 mOhm |
| Gate Charge Qg typical | 74 nC |
| Maximum Gate-Source Voltage (VGS) | 20 V |
| آپریٹنگ درجہ حرارت | -55 C to +175 C (junction) |
| پیکیج | PG-HDSOP-16-2 (top-side cooled) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Technology | OptiMOS 5 trench |
| Cooling | Top-side cooled (case above PCB) |
| RoHS اسٹیٹس | Compliant |
IPTC039N15NM5ATMA1 پن کنفیگریشن
| پن 1 | Source — Source terminal (connected to thermal pad region) |
| پن 2 | Source — Source terminal |
| پن 3 | Source — Source terminal |
| پن 4 | Gate — Gate drive input |
| پن 5 | Drain — Drain terminal |
| پن 6 | Drain — Drain terminal |
| پن 7 | Drain — Drain terminal |
| پن 8 | Drain — Drain terminal |
| پن 9 | NC — Not connected (per datasheet) |
| پن 10 | NC — Not connected (per datasheet) |
| پن 11 | NC — Not connected (per datasheet) |
| پن 12 | NC — Not connected (per datasheet) |
| پن 13 | Source — Source terminal |
| پن 14 | Source — Source terminal |
| پن 15 | Source — Source terminal |
| پن 16 | Source — Source terminal (top-side thermal pad connection region) |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IPTC039N15NM5ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: E-Vehicle Traction Inverters, Cordless Power Tool Motor Drives, Industrial SMPS Synchronous Rectifiers, 48 V Mild-Hybrid DC-DC Converters, Solar Microinverters and Optimizers, Battery Formation and Test Equipment.
E-Vehicle Traction Inverters
The IPTC039N15NM5ATMA1 is well-matched for 48 V and 96 V mild-hybrid traction inverter power stages. Its 150 V VDS rating provides 25-30% headroom above the 100-120 V DC-link rails typical in e-mobility systems, while the 190 A continuous drain current at TC=25 C supports high-torque motor-drive switching. The 3.9 mOhm typical RDS(on) at VGS=10 V minimizes conduction losses during the high-current PWM cycles of traction operation, and the 74 nC typical Qg enables switching frequencies of 50-100 kHz in the inverter stage without excessive gate-drive loss. The top-side cooled PG-HDSOP-16-2 package allows direct attachment to the inverter cold-plate, critical for compact automotive powertrain assemblies.
تجویز کردہ
Cordless Power Tool Motor Drives
The IPTC039N15NM5ATMA1 fits high-power cordless tool motor drives operating from 18 V to 96 V battery packs. The 3.9 mOhm RDS(on) reduces I2R losses in the brushless DC motor switching stage, extending battery runtime - a critical parameter for end-user-perceived tool performance. The 190 A ID supports the high-peak-current pulses typical during motor start-up and stall conditions, while the PG-HDSOP-16-2 package with top-side cooling allows integration into compact tool housings where PCB-bottom copper area is limited. The 150 V VDS also provides headroom for inductive voltage transients from motor winding commutation.
تجویز کردہ
Industrial SMPS Synchronous Rectifiers
In 48 V-input telecom and industrial SMPS synchronous rectifier stages, the IPTC039N15NM5ATMA1 delivers low conduction loss via 3.9 mOhm RDS(on) and fast switching via 74 nC Qg. The figure-of-merit RDS(on) x Qg = 3.9 mOhm x 74 nC = 289 mOhm-nC positions this part competitively for hard-switched synchronous rectification at 100-200 kHz. The 150 V VDS rating covers 48 V and 60 V DC-input rails with margin, while the PG-HDSOP-16-2 top-side cooling enables high-density rectifier designs where multiple MOSFETs share a single cold-plate in 1U/2U power-supply form factors.
تجویز کردہ
48 V Mild-Hybrid DC-DC Converters
The IPTC039N15NM5ATMA1 is well-suited for 48 V mild-hybrid vehicle DC-DC converters stepping down to 12 V auxiliary rails. The 150 V VDS rating covers the 48 V bus with substantial transient headroom for load-dump events, while the 3.9 mOhm RDS(on) minimizes losses at the 100-300 A currents typical of 48V-to-12V converters. The PG-HDSOP-16-2 top-side cooled package is preferred for automotive under-hood assemblies where PCB-bottom cooling is insufficient and direct chassis-attached cold-plates are standard. The part's 175 C maximum junction temperature rating supports under-hood thermal environments.
تجویز کردہ
Solar Microinverters and Optimizers
In solar microinverter and power-optimizer applications, the IPTC039N15NM5ATMA1 serves as the primary switching device or synchronous rectifier for 60 V to 120 V PV-string DC-DC stages. The 150 V VDS rating covers standard residential PV strings with margin for open-circuit transients under cold-weather over-voltage conditions. The 3.9 mOhm RDS(on) at 10 V VGS enables high-efficiency conversion critical for solar energy-harvesting ROI, and the top-side cooled PG-HDSOP-16-2 package suits outdoor microinverter enclosures with thermally conductive potting compounds.
تجویز کردہ
Battery Formation and Test Equipment
The IPTC039N15NM5ATMA1 is well-matched for battery-formation and capacity-test equipment requiring high-current pulse discharge through Li-ion cells. The 190 A continuous ID at TC=25 C supports the high-current pulses used in DCIR (direct-current internal resistance) measurement and capacity cycling, while the 3.9 mOhm RDS(on) minimizes heat generation during controlled discharge cycles. The 150 V VDS also provides headroom for multi-cell series-string configurations common in battery-pack test fixtures. The top-side cooled package suits rack-mounted test equipment with shared cold-plates.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPTC039N15NM5ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPTC039N15NM5 | IQE220N15NM5CGSCATMA1 | ISC015N06NM5ATMA1 | BSC076N04NDATMA1 | IPD65R380E6ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-HDSOP-16-2 (top-side cooled) | PG-HDSOP-16-2 (same) | PG-HDSOP-16 (similar HDSOP family) | PG-HDSOP-16 (similar HDSOP family) | PG-TDSON-8 (different) | PG-TO252-3 DPAK (different) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage VDS | 150 V | 150 V (same) | 150 V (same) | 60 V (-60%) | 40 V (-73%) | 650 V (+333%) |
| On-Resistance RDS(on) typical | 3.9 mOhm | 3.9 mOhm (same) | 3.9 mOhm (same) | 1.5 mOhm | 7.6 mOhm | 380 mOhm |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench (same) | OptiMOS 5 trench (same) | OptiMOS 5 trench (same) | OptiMOS (different gen) | CoolMOS E6 |
| Cooling Method | Top-side cooled | Top-side cooled (same) | Top-side cooled | Top-side cooled | Bottom-cooled (PCB copper) | Bottom-cooled (PCB copper) |
اہم امتیازی خصوصیات
- Top-side cooled package enables higher power density than bottom-cooled DPAK alternatives (بمقابلہIPD65R380E6ATMA1 (DPAK))
- Optimized 150 V VDS class for 48 V and 96 V DC-link applications (بمقابلہISC015N06NM5ATMA1 (60 V class))
- OptiMOS 5 technology achieves best-in-class RDS(on) x Qg FOM (بمقابلہIRF1310NSTRLPBF (legacy IR technology))
ڈیزائن نوٹس
Estimated: At 190 A continuous drain current with 3.9 mOhm RDS(on), conduction loss is approximately P = I^2 x RDS(on) = 190^2 x 0.0039 = 141 W. The PG-HDSOP-16-2 package dissipates 319 W at TC = 25 C with top-side cooling. Designers MUST attach the top thermal pad to a heatsink or cold-plate with thermal interface material (TIM) to maintain junction temperature below 175 C. PCB-bottom copper alone is insufficient for sustained high-current operation.
Layout for PG-HDSOP-16-2 should minimize the high-current loop area between drain and source to reduce parasitic inductance that causes voltage overshoot during switching. Use wide copper pours (>=2 oz copper) on drain and source pads, place the gate-driver IC within 10 mm of the gate pin, and add a gate-source resistor (10-100 kOhm) to prevent false turn-on from dv/dt-induced Miller coupling. Per Infineon application notes, top-side thermal pad must be soldered to a thermal-spreader PCB region or heatsink for full 319 W dissipation.
Avoid these common pitfalls when designing with IPTC039N15NM5ATMA1: (1) Exceeding 20 V VGS absolute maximum will permanently damage the gate oxide - use a gate-driver with proper clamping. (2) Operating beyond the SOA curve at high VDS and high ID simultaneously can cause thermal runaway; refer to datasheet SOA graph. (3) Inadequate top-side thermal attachment leads to junction overheating even at moderate currents - the package's advantage is ONLY realized with proper cold-plate interface. (4) Insufficient gate-drive voltage (below 8 V) prevents full RDS(on) rating and increases losses dramatically.
For half-bridge and full-bridge topologies, place the high-side and low-side MOSFETs symmetrically to balance thermal distribution. Use Kelvin-source connection (separate source-sense pin) when available to eliminate source-inductance effects on gate-drive timing. Keep the gate-drive loop (gate-driver output to MOSFET gate to MOSFET source back to gate-driver ground) area below 10 mm^2 to minimize parasitic inductance and ringing. Per Infineon OptiMOS 5 application notes, a small RC snubber (10-100 Ohm + 1-10 nF) across drain-source can dampen high-frequency ringing in hard-switched topologies.
تعمیل کی معلومات
RoHS and REACH compliance confirmed by Infineon product page. AEC-Q100 automotive qualification status not explicitly stated in verified web data - confirm with Infineon for automotive programs. Lead-free (Pb-free) reflow compatible per modern Infineon MOSFET datasheet conventions.
