IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΩ 10.6A | Infineon
MPN: IPD65R380E6ATMA1 ✓ فعالIPD65R380E6ATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch that regulates or converts electrical energy by modulating current flow between its drain and source terminals under gate-source bias. CoolMOS™ E6 belongs to the superjunction MOSFET family, which uses a deep-trench charge-compensation structure to dramatically reduce on-resistance per unit area compared with conventional planar MOSFETs at the same voltage rating. This places the part in the broader hierarchy of discrete semiconductors → transistors → MOSFETs → superjunction MOSFETs → high-voltage power MOSFETs.
Key differentiating specifications include a typical R_DS(on) of 380 mΩ at V_GS = 10 V / I_D = 3.2 A, an integrated body diode with reverse-recovery charge suitable for hard-switching bridges, and an ultra-low gate charge Q_G = 39 nC at 10 V that minimizes driver losses at high switching frequencies. The device supports continuous drain current up to 10.6 A at T_C and a pulsed avalanche rating for transient robustness. Thermal resistance is engineered for the DPAK land pattern, allowing standard SMT reflow and bottom-side copper cooling.
Architecturally, CoolMOS™ E6 uses Infineon's mature charge-compensation principle with optimized cell pitch, achieving an excellent FOM (R_DS(on) × Q_G) that enables higher switching frequencies and therefore smaller magnetics in SMPS designs. The E6 generation emphasizes best-in-class efficiency at light load and excellent body-diode ruggedness, making it well-suited to both hard-switched PFC and LLC topologies.
Typical applications include telecom and server SMPS, industrial motor drives, solar micro-inverters, e-bike chargers, and CCFL/LED lighting ballasts where 650 V breakdown and low conduction loss are mandatory. Designers select this part when they need a proven superjunction platform with broad second-source ecosystem rather than the newest generation silicon.
When designing with the IPD65R380E6ATMA1, observe the DPAK land pattern, minimize gate-loop inductance to avoid V_GS ringing above the ±20 V rating, and provide sufficient drain-side copper for thermal dissipation. Avoid exceeding the avalanche energy rating during transformer-reset events.
This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single, citation-ready reference for the IPD65R380E6ATMA1.
کے لیے ڈراپ اِن متبادل IPD65R380E6ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD65R380E6ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Series, MSL Level, Package, Operating Temperature Range.
IPD65R380E6BTMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD65R380C6BTMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD60R380P6ATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD65R420CFDBTMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD65R225C7ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →STD16N65M2
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD65R380E6ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ E6 |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Technology | Superjunction (CoolMOS™) |
| Drain-Source Voltage (V_DS) | 650 V |
| Continuous Drain Current (I_D) at T_C | 10.6 A |
| R_DS(on) max at V_GS=10V | 380 mΩ |
| R_DS(on) test conditions | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ |
| Gate Charge (Q_G) | 39 nC at 10 V |
| Input Capacitance (C_iss) | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | 83 W |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +150 °C |
| پیکیج | PG-TO252-3 (DPAK), surface mount |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 |
IPD65R380E6ATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input; apply 0 V (off) or +10 V (on), absolute max ±20 V |
| پن 2 | Drain — Power drain; internally connected to the copper tab, primary current path |
| پن 3 | Source — Power source return; Kelvin connection recommended for gate-drive return |
محفوظ آپریٹنگ ایریا (DC, T_C = 25 °C)
عام استعمالات
IPD65R380E6ATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: Telecom and Server SMPS, Power Factor Correction (PFC) Boost Stage, LED Lighting Ballasts and Drivers, Industrial Auxiliary Power Supplies, Solar Micro-Inverters, E-bike and Two-Wheeler Chargers, Plasma and LCD TV Backlight Power.
Telecom and Server SMPS
The IPD65R380E6ATMA1 is well suited to telecom and server switch-mode power supplies where 380 V–400 V DC bus voltages from PFC front-ends stress MOSFETs near their V_DS limit. Its 650 V breakdown provides more than 60% margin above a 400 V PFC bulk rail, while the 380 mΩ R_DS(on) keeps conduction loss manageable at 5–8 A continuous drain current typical of 200–300 W LLC stages. Designers place the device on the primary side of the LLC half-bridge; the low 39 nC Q_G allows switching frequencies above 100 kHz, shrinking the resonant tank. The DPAK footprint also simplifies PCB thermal layout via a bottom-side copper drain tab.
تجویز کردہ
Power Factor Correction (PFC) Boost Stage
In continuous-conduction-mode PFC boost converters fed from universal 85–265 VAC mains, the IPD65R380E6ATMA1 acts as the boost switch with V_DS = 650 V comfortably exceeding the 380–400 V rectified peak. The 10.6 A continuous drain current supports PFC stages up to roughly 250 W per device, while the 380 mΩ R_DS(on) keeps typical conduction loss below 1.5 W at full load. The DPAK package's exposed tab routes heat directly to the PCB copper, eliminating the need for an external heatsink in flat-form-factor designs. Compared with planar MOSFETs at the same voltage, CoolMOS E6 reduces switching loss by ~40%.
تجویز کردہ
LED Lighting Ballasts and Drivers
Commercial LED luminaires and street-light drivers use the IPD65R380E6ATMA1 in the primary-side flyback or PFC+LLC stage. Its 650 V rating tolerates wide 176–264 VAC input ranges, while the 380 mΩ R_DS(on) keeps the 100–150 W driver below typical 80 °C case temperature with only a small copper pour — critical for sealed IP65 luminaires with limited convection. The superjunction technology's low gate charge (39 nC) enables 100 kHz+ operation, allowing a smaller transformer and lower BOM cost. The part is well matched to cost-driven designs where the more expensive C7 generation is unjustified.
تجویز کردہ
Industrial Auxiliary Power Supplies
Auxiliary standby supplies in industrial drives, PLCs, and 24 V bus systems commonly use the IPD65R380E6ATMA1 as the primary-side switch in a quasi-resonant flyback or two-transistor forward topology. The 650 V V_DS rating handles the rectified 380–400 V intermediate bus with margin, and the 10.6 A continuous current supports 30–60 W output rails for control electronics. The DPAK surface-mount package simplifies automated assembly versus through-hole TO-220 alternatives, while the integrated body diode offers sufficient ruggedness for transformer demagnetization events. Industrial ambient temperatures up to 85 °C are within the part's operating range.
تجویز کردہ
Solar Micro-Inverters
In residential solar micro-inverters (200–600 W), the IPD65R380E6ATMA1 serves as the high-side or low-side switch in the DC-DC boost stage feeding the grid-tie inverter. Its 650 V V_DS rating handles 200–400 V DC PV string voltages, while the 10.6 A current supports full power at 200 W per phase. The CoolMOS E6's low R_DS(on) × Q_G figure of merit improves CEC-weighted efficiency by 0.3–0.5% versus older planar MOSFETs, directly increasing annual energy harvest. The device's proven reliability in outdoor PV environments is reinforced by Infineon's industrial-grade qualification.
تجویز کردہ
E-bike and Two-Wheeler Chargers
Compact chargers for e-bike and e-scooter 36 V / 48 V battery packs use the IPD65R380E6ATMA1 in the PFC plus flyback power train. The 650 V V_DS rating easily withstands rectified 230 VAC plus transient ring from leakage inductance, and the 380 mΩ R_DS(on) limits full-load conduction loss to roughly 1 W — important for sealed plastic enclosures with no active cooling. The DPAK package's small footprint enables charger designs under 150 × 80 × 40 mm, while Infineon's broad second-source ecosystem (DigiKey, Mouser, Arrow) supports the long lifecycle typical of consumer mobility products.
تجویز کردہ
Plasma and LCD TV Backlight Power
Older plasma TV panels and LCD-TV backlight drivers used in 100–250 W mains-powered consumer electronics employ the IPD65R380E6ATMA1 in their PFC + LLC power train. The 650 V V_DS rating handles 400 V PFC bus voltage, and the 380 mΩ R_DS(on) supports the high peak currents needed for plasma sustain drivers. Though TV designs are migrating to GaN, CoolMOS E6 remains in service for legacy replacement boards and second-source panels. The DPAK package's SMT compatibility matches flat-panel assembly lines.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD65R380E6ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD65R380E6BTMA1 | IPD65R380C6BTMA1 | IPD60R380P6ATMA1 | STD16N65M2 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| V_DS max (V) | 650 V | 650 V | 650 V | 600 V | 650 V |
| R_DS(on) max (mΩ) at 10 V | 380 mΩ | 380 mΩ | 380 mΩ | 380 mΩ | 380 mΩ (typ) |
| Continuous I_D at T_C (A) | 10.6 A | 10.6 A | 10.6 A | 10.6 A | 11 A |
| Gate Charge Q_G (nC) | 39 nC | 39 nC | 25 nC | 32 nC | 30 nC (typ) |
| Technology / Generation | CoolMOS™ E6 | CoolMOS™ E6 (reel variant) | CoolMOS™ C6 | CoolMOS™ P6 | MDmesh™ M2 |
| P_D at T_C (W) | 83 W | 83 W | 83 W | 83 W | 90 W |
| Unit Price (1 pc, USD, as of 2026-09-15) | $1.42 | $1.42 | $1.55 | $1.10 | $1.30 |
اہم امتیازی خصوصیات
- Proven CoolMOS E6 platform with broadest second-source ecosystem (بمقابلہIPD65R380C6BTMA1 (CoolMOS C6 generation))
- 650 V V_DS rating with 380 mΩ R_DS(on) in DPAK (بمقابلہIPD60R380P6ATMA1 (CoolMOS P6, 600 V))
- Cross-brand availability as drop-in STD16N65M2 replacement (بمقابلہSTD16N65M2 (STMicroelectronics MDmesh M2))
- Lower R_DS(on) option available in same package (بمقابلہIPD65R225C7ATMA1 (CoolMOS C7, 225 mΩ))
ڈیزائن نوٹس
Estimated: at V_DS = 400 V (post-PFC bus), I_D = 5 A continuous, and R_DS(on) = 380 mΩ at T_J = 100 °C, conduction loss is P_cond = I_D² × R_DS(on) ≈ 5² × 0.38 = 9.5 W. With θ_JA ≈ 50 °C/W on a 1 oz copper DPAK land pattern (no heatsink), T_J rises by roughly 9.5 × 50 = 475 °C above ambient, which is unacceptable. Adding 6 cm² of bottom-side copper reduces θ_JA to ~35 °C/W, giving T_J rise ≈ 9.5 × 35 = 333 °C — still over limit. Practical mitigation: keep continuous drain current under 4 A on the standard DPAK footprint, or migrate to IPD65R225C7 (225 mΩ) for the same thermal envelope. Always derate to 60–70% of the 10.6 A datasheet value for reliable long-life operation.
The PG-TO252-3 (DPAK) drain tab is electrically hot, so the PCB copper pour under the device must be sized for both thermal dissipation and creepage. Per IPC-2221, maintain at least 5 mm clearance between the drain tab and any low-voltage secondary-side trace. For thermal performance, a continuous copper pour of at least 100 mm² (1 cm × 1 cm) on the top layer plus matched bottom-layer copper connected via thermal vias (0.3 mm drill, 1 mm pitch, 6–10 vias) is recommended. Place the gate-drive return (Source sense) trace directly above the Source pin to minimize gate-loop inductance and prevent V_GS ringing above the ±20 V abs-max.
Three recurring issues with DPAK superjunction MOSFETs in 650 V designs: (1) exceeding ±20 V V_GS during fast switching transients — add a 10–22 Ω gate resistor and a Zener clamp (15 V) gate-to-source if ringing is observed; (2) ignoring the body-diode reverse-recovery charge Q_rr when used as a synchronous rectifier in a half-bridge — the E6 family is optimized for hard switching and is not the best choice as a synchronous rectifier (use a dedicated C6 CFD or P7 part instead); (3) forgetting the tab-to-pin-2 (Drain) connection when assigning schematic symbols — the Drain pad is the drain, not a separate thermal pad, so it must carry the full load current and must be kept clear of any signal traces.
Minimize the high-side gate-drive loop by routing the bootstrap diode, bootstrap capacitor, and high-side gate return directly over the device footprint. The Source-sense pin (pin 3) should be used as the gate-driver return reference; do not tie the gate-drive ground to the power-source copper beyond pin 3. Keep the snubber network (if any) within 3 mm of the drain tab to suppress V_DS overshoot from transformer leakage inductance. When designing a half-bridge, mirror the gate-drive layout for the low-side FET as well to balance turn-on/turn-off timing and prevent cross-conduction.
Although the IPD65R380E6ATMA1 is a power device, its gate behaves like a fast analog input with C_iss = 710 pF at 100 V. Drive it with a peak current of at least 1 A (gate driver with 1–2 A source/sink capability) to achieve sub-50 ns switching times. Slower gate rise times (>100 ns) raise switching losses dramatically in 100 kHz+ PFC and LLC stages; measure V_GS with a short-spring ground-tip probe directly at the device pins to verify rise time. If using a non-isolated gate driver, ensure the bootstrap supply startup time is shorter than the minimum PFC duty cycle to avoid loss of gate drive on the high-side FET.
تعمیل کی معلومات
RoHS compliant and Pb-free per Infineon material declaration. Halogen-free per Infineon product environmental compliance data. Not AEC-Q100 qualified — for automotive applications use Infineon's automotive-grade equivalents (e.g. IPD65R380E6ATMA1's automotive counterpart would be in the IPD-AQ family). Reach and conflict-minerals compliance statements are published on the Infineon product environmental page.
