IRF8714TRPBF - 30V 14A 8.7mΩ N-Ch HEXFET MOSFET | Infineon
MPN: IRF8714TRPBF ✓ فعالIRF8714TRPBF جائزہ
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates a conductive channel between drain and source. N-channel MOSFETs are widely used as low-side or high-side switches in switching power supplies, motor drivers, and load management circuits because of their low on-state resistance and high switching speed. The IRF8714 belongs to the StrongIRFET family, which is optimized for high-current, low-voltage applications where both conduction and switching losses matter.
Key features include a 30 V drain-source breakdown voltage, 8.7 mΩ maximum RDS(on) at VGS = 10 V, 14 A continuous drain current at TA = 25 °C (with 2.5 W power dissipation), and a logic-compatible 20 V maximum gate-source voltage. The SO-8 footprint offers excellent thermal conduction through the source pin and copper pad, allowing the device to drive 14 A in a compact PCB area. Avalanche-rated construction adds robustness against inductive load transients common in motor and solenoid circuits.
The IRF8714 uses Infineon's proprietary planar HEXFET cell structure, which minimizes cell pitch and reduces RDS(on) × area figure of merit. Its 8.1 nC total gate charge keeps drive losses modest, and the SO-8 package provides a low thermal resistance path when soldered to a properly sized copper pour. The device is also RoHS-compliant and lead-free, meeting modern environmental requirements for consumer and industrial equipment.
Typical applications include synchronous buck converters in point-of-load regulators, DC motor drive and reverse-polarity protection circuits, battery management and load switching in notebook and tablet designs, hot-swap controllers for enterprise servers, and high-current LED drivers. The 30 V rating provides ample margin for 12 V bus rails with significant transient headroom.
When designing with the IRF8714TRPBF, ensure that the SO-8 thermal pad is soldered to at least 1 square inch of copper to keep junction temperature within safe limits at high currents. Use a gate resistor of 10 Ω to 100 Ω to control switching transients and avoid shoot-through in synchronous topologies.
This page synthesizes distributor pricing, drop-in alternative parts, and practical PCB design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل IRF8714TRPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRF8714TRPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, FET Type, Technology, MSL Level, Operating Temperature Range.
IRF8714PBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRLL2705TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR024NTRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR540NPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRLL024NTRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR9014NTRPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF8714TRPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | HEXFET / StrongIRFET (planar MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 14 A |
| On-State Resistance (RDS(on)) max at VGS=10V | 8.7 mΩ |
| Gate Charge (Qg) typical | 8.1 nC |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (PD) at TA=25C | 2.5 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (junction) |
| پیکیج | SO-8 (8-SOIC) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 8 |
| Avalanche Rated | Yes |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant |
| MSL لیول | 1 (per Infineon package qualification) |
IRF8714TRPBF پن کنفیگریشن
| پن 1 | Source — Source terminal (pin 1 of SO-8 standard pinout) |
| پن 2 | Source — Source terminal |
| پن 3 | Source — Source terminal |
| پن 4 | Gate — Gate drive input |
| پن 5 | Drain — Drain terminal |
| پن 6 | Drain — Drain terminal |
| پن 7 | Drain — Drain terminal |
| پن 8 | Drain — Drain terminal (thermal pad connection) |
محفوظ آپریٹنگ ایریا (estimated from datasheet SOA envelope)
عام استعمالات
IRF8714TRPBF کے لیے موزوں ہے 6 ایپلیکیشنs: Synchronous Buck Converter Rectifier, DC Motor Drive and H-Bridge Switch, Notebook and Tablet Power Path Switching, Hot-Swap Controller Load Switch, High-Current LED Driver Switch, Reverse-Polarity Battery Protection.
Synchronous Buck Converter Rectifier
The IRF8714TRPBF's 30 V VDS rating and 8.7 mΩ RDS(on) make it a strong fit as the synchronous low-side MOSFET in 12 V-input buck converters. Its 8.1 nC gate charge keeps gate-drive losses low at switching frequencies of 300-500 kHz, supporting point-of-load regulators for FPGAs, ASICs, and microprocessors. Compared to a Schottky diode solution, the IRF8714 dramatically reduces conduction loss at high currents; a designer can expect efficiency gains of 4-8% at 10 A loads.
تجویز کردہ
DC Motor Drive and H-Bridge Switch
The IRF8714TRPBF is well-suited for DC motor drive applications including brushed DC H-bridges up to 24 V. Its 14 A continuous current and 30 V breakdown comfortably handle 12 V and 18 V motors with high inrush. The SO-8 footprint allows compact PCB integration, and avalanche ruggedness protects the FET from the inductive kickback when the motor is switched off. A standard gate-drive of 10 V gives full enhancement and minimizes on-state losses.
تجویز کردہ
Notebook and Tablet Power Path Switching
In portable electronics such as notebooks, tablets, and power banks, the IRF8714TRPBF acts as a load switch on the 5 V to 20 V rail, disconnecting subsystems in standby to extend battery life. Its 8.7 mΩ RDS(on) keeps voltage drop below 100 mV at 10 A load, which is critical for downstream regulators. The compact SO-8 footprint lets designers place the switch close to the connector, minimizing trace losses.
تجویز کردہ
Hot-Swap Controller Load Switch
Hot-swap controllers in enterprise servers and storage systems rely on rugged N-channel MOSFETs to inrush-limit 12 V outputs. The IRF8714TRPBF's 30 V VDS and 14 A current capacity suit 12 V rails up to 100 W per rail. Its SOA allows momentary operation in the linear region during plug-in events, and the SO-8 footprint provides adequate heat-sinking for sustained fault-current limiting up to several seconds.
تجویز کردہ
High-Current LED Driver Switch
The IRF8714TRPBF enables high-brightness LED driver designs where currents up to 14 A must be PWM-switched for dimming. Its low 8.7 mΩ RDS(on) keeps conduction loss under 1 W at 10 A, which is essential for thermal management in LED fixtures. The 30 V rating covers 12 V and 24 V LED strings with margin for transient overshoot, and the SO-8 footprint accepts standard SMT assembly processes.
تجویز کردہ
Reverse-Polarity Battery Protection
When used at the battery input of a system, the IRF8714TRPBF acts as a reverse-polarity protection switch that disconnects the load if a battery is inserted with reversed polarity. Its 30 V VDS withstands the negative transient of reversed 12 V batteries, and the 8.7 mΩ RDS(on) introduces minimal loss in normal operation. Combined with a smart battery monitor, this configuration is common in two-wheel EVs, robotics, and industrial battery packs.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRF8714TRPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRF8714PBF | IRLL2705TRPBF | IRFR024NTRPBF | IRFR540NPBF | IRLL024NTRPBF |
|---|---|---|---|---|---|---|
| Package | SO-8 (8-SOIC) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| FET Type / Polarity | N-Channel | N-Channel | N-Channel (logic-level) | N-Channel | N-Channel | N-Channel (logic-level) |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 55 V | 55 V | 100 V | 55 V |
| On-Resistance RDS(on) max at VGS=10V | 8.7 mΩ | 8.7 mΩ | 45 mΩ | 75 mΩ | 44 mΩ | 100 mΩ |
| Continuous Drain Current at TA=25C | 14 A | 14 A | 3.8 A | 17 A | 35 A | 5 A |
| Total Gate Charge (Qg) typical | 8.1 nC | 8.1 nC | 12 nC | 20 nC | 71 nC | 13 nC |
| Logic-Level Gate Drive (VGS(th) < 2.5V) | No (standard threshold) | No | Yes | No | No | Yes |
| Unit Price @ Qty 100 (USD) | 0.94 | 0.92 | 0.45 | 0.38 | 0.55 | 0.42 |
اہم امتیازی خصوصیات
- Industry-leading RDS(on) in SO-8 at 30 V VDS (بمقابلہIRLL2705TRPBF)
- Lower gate charge than higher-voltage alternatives (بمقابلہIRFR540NPBF)
- Same SO-8 footprint, drop-in compatible (بمقابلہIRFR024NTRPBF)
ڈیزائن نوٹس
At 10 A continuous current and 8.7 mΩ RDS(on), the IRF8714TRPBF dissipates approximately 0.87 W. The SO-8 package has a junction-to-ambient thermal resistance (theta_JA) of around 50 C/W on a 1 oz copper 1-square-inch pad, producing a junction-temperature rise of ~44 C. Estimated: ambient 25 C + 44 C = 69 C, well within the 150 C junction limit. For continuous 14 A operation, expand copper area to 2-3 sq inches or add top-side airflow to keep junction below 100 C.
The SO-8 footprint used by the IRF8714TRPBF has a JEDEC-standard land pattern that matches thousands of competing parts. Use 2 oz copper on the drain pads (pins 5-8) for best thermal performance, and stitch thermal vias from the top-layer drain pad to an internal ground plane. Solder paste stencil aperture of 1:1 to the land pattern is recommended, with no thermal relief spoke on drain pads to maximize heat conduction.
Do not exceed ±20 V on the gate - even brief transients above this level can rupture the gate oxide of the IRF8714TRPBF. Add a 10 kΩ pull-down on the gate to ensure the FET stays off during MCU power-up. Avoid driving the gate directly from a 3.3 V microcontroller GPIO if VGS(th) is above 2.5 V; in that case use a gate-driver or logic-level variant like IRLL2705TRPBF instead. Keep the gate-drive loop area minimal by placing the gate resistor within 5 mm of the gate pin.
In switching applications, minimize the high-side / low-side FET loop area to reduce parasitic inductance and ringing. Place the IRF8714TRPBF and its high-side counterpart on the same side of the PCB with the input capacitor return path directly beneath them. Use a 4-layer stack-up with a continuous ground plane under the switching node; this keeps di/dt loops small and reduces EMI by 10-15 dB compared to 2-layer designs.
تعمیل کی معلومات
RoHS-compliant and lead-free per Infineon product page. Not AEC-Q100 qualified; for automotive applications use Infineon's automotive-grade StrongIRFET parts.
