IRF8714TRPBF - 30V 14A 8.7mΩ N-Ch HEXFET MOSFET | Infineon
MPN: IRF8714TRPBF ✓ Hoạt độngIRF8714TRPBF Tóm tắt
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates a conductive channel between drain and source. N-channel MOSFETs are widely used as low-side or high-side switches in switching power supplies, motor drivers, and load management circuits because of their low on-state resistance and high switching speed. The IRF8714 belongs to the StrongIRFET family, which is optimized for high-current, low-voltage applications where both conduction and switching losses matter.
Key features include a 30 V drain-source breakdown voltage, 8.7 mΩ maximum RDS(on) at VGS = 10 V, 14 A continuous drain current at TA = 25 °C (with 2.5 W power dissipation), and a logic-compatible 20 V maximum gate-source voltage. The SO-8 footprint offers excellent thermal conduction through the source pin and copper pad, allowing the device to drive 14 A in a compact PCB area. Avalanche-rated construction adds robustness against inductive load transients common in motor and solenoid circuits.
The IRF8714 uses Infineon's proprietary planar HEXFET cell structure, which minimizes cell pitch and reduces RDS(on) × area figure of merit. Its 8.1 nC total gate charge keeps drive losses modest, and the SO-8 package provides a low thermal resistance path when soldered to a properly sized copper pour. The device is also RoHS-compliant and lead-free, meeting modern environmental requirements for consumer and industrial equipment.
Typical applications include synchronous buck converters in point-of-load regulators, DC motor drive and reverse-polarity protection circuits, battery management and load switching in notebook and tablet designs, hot-swap controllers for enterprise servers, and high-current LED drivers. The 30 V rating provides ample margin for 12 V bus rails with significant transient headroom.
When designing with the IRF8714TRPBF, ensure that the SO-8 thermal pad is soldered to at least 1 square inch of copper to keep junction temperature within safe limits at high currents. Use a gate resistor of 10 Ω to 100 Ω to control switching transients and avoid shoot-through in synchronous topologies.
This page synthesizes distributor pricing, drop-in alternative parts, and practical PCB design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IRF8714TRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRF8714TRPBF (cùng hình factor và footprint) — khác nhau ở Package, FET Type, Technology, MSL Level, Operating Temperature Range.
IRF8714PBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLL2705TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR024NTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR540NPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLL024NTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR9014NTRPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRF8714TRPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | HEXFET / StrongIRFET (planar MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 14 A |
| On-State Resistance (RDS(on)) max at VGS=10V | 8.7 mΩ |
| Gate Charge (Qg) typical | 8.1 nC |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (PD) at TA=25C | 2.5 W |
| Khoảng nhiệt độ hoạt động | -55C to +150C (junction) |
| Hộp | SO-8 (8-SOIC) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 8 |
| Avalanche Rated | Yes |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant |
| Cấp MSL | 1 (per Infineon package qualification) |
Cấu hình chân IRF8714TRPBF
| Chân 1 | Source — Source terminal (pin 1 of SO-8 standard pinout) |
| Chân 2 | Source — Source terminal |
| Chân 3 | Source — Source terminal |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain terminal |
| Chân 6 | Drain — Drain terminal |
| Chân 7 | Drain — Drain terminal |
| Chân 8 | Drain — Drain terminal (thermal pad connection) |
Khu vực hoạt động an toàn (estimated from datasheet SOA envelope)
Ứng dụng tiêu biểu
IRF8714TRPBF phù hợp cho 6 Áp dụngs: Synchronous Buck Converter Rectifier, DC Motor Drive and H-Bridge Switch, Notebook and Tablet Power Path Switching, Hot-Swap Controller Load Switch, High-Current LED Driver Switch, Reverse-Polarity Battery Protection.
Synchronous Buck Converter Rectifier
The IRF8714TRPBF's 30 V VDS rating and 8.7 mΩ RDS(on) make it a strong fit as the synchronous low-side MOSFET in 12 V-input buck converters. Its 8.1 nC gate charge keeps gate-drive losses low at switching frequencies of 300-500 kHz, supporting point-of-load regulators for FPGAs, ASICs, and microprocessors. Compared to a Schottky diode solution, the IRF8714 dramatically reduces conduction loss at high currents; a designer can expect efficiency gains of 4-8% at 10 A loads.
Được đề xuất
DC Motor Drive and H-Bridge Switch
The IRF8714TRPBF is well-suited for DC motor drive applications including brushed DC H-bridges up to 24 V. Its 14 A continuous current and 30 V breakdown comfortably handle 12 V and 18 V motors with high inrush. The SO-8 footprint allows compact PCB integration, and avalanche ruggedness protects the FET from the inductive kickback when the motor is switched off. A standard gate-drive of 10 V gives full enhancement and minimizes on-state losses.
Được đề xuất
Notebook and Tablet Power Path Switching
In portable electronics such as notebooks, tablets, and power banks, the IRF8714TRPBF acts as a load switch on the 5 V to 20 V rail, disconnecting subsystems in standby to extend battery life. Its 8.7 mΩ RDS(on) keeps voltage drop below 100 mV at 10 A load, which is critical for downstream regulators. The compact SO-8 footprint lets designers place the switch close to the connector, minimizing trace losses.
Được đề xuất
Hot-Swap Controller Load Switch
Hot-swap controllers in enterprise servers and storage systems rely on rugged N-channel MOSFETs to inrush-limit 12 V outputs. The IRF8714TRPBF's 30 V VDS and 14 A current capacity suit 12 V rails up to 100 W per rail. Its SOA allows momentary operation in the linear region during plug-in events, and the SO-8 footprint provides adequate heat-sinking for sustained fault-current limiting up to several seconds.
Được đề xuất
High-Current LED Driver Switch
The IRF8714TRPBF enables high-brightness LED driver designs where currents up to 14 A must be PWM-switched for dimming. Its low 8.7 mΩ RDS(on) keeps conduction loss under 1 W at 10 A, which is essential for thermal management in LED fixtures. The 30 V rating covers 12 V and 24 V LED strings with margin for transient overshoot, and the SO-8 footprint accepts standard SMT assembly processes.
Được đề xuất
Reverse-Polarity Battery Protection
When used at the battery input of a system, the IRF8714TRPBF acts as a reverse-polarity protection switch that disconnects the load if a battery is inserted with reversed polarity. Its 30 V VDS withstands the negative transient of reversed 12 V batteries, and the 8.7 mΩ RDS(on) introduces minimal loss in normal operation. Combined with a smart battery monitor, this configuration is common in two-wheel EVs, robotics, and industrial battery packs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRF8714TRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRF8714PBF | IRLL2705TRPBF | IRFR024NTRPBF | IRFR540NPBF | IRLL024NTRPBF |
|---|---|---|---|---|---|---|
| Package | SO-8 (8-SOIC) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| FET Type / Polarity | N-Channel | N-Channel | N-Channel (logic-level) | N-Channel | N-Channel | N-Channel (logic-level) |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 55 V | 55 V | 100 V | 55 V |
| On-Resistance RDS(on) max at VGS=10V | 8.7 mΩ | 8.7 mΩ | 45 mΩ | 75 mΩ | 44 mΩ | 100 mΩ |
| Continuous Drain Current at TA=25C | 14 A | 14 A | 3.8 A | 17 A | 35 A | 5 A |
| Total Gate Charge (Qg) typical | 8.1 nC | 8.1 nC | 12 nC | 20 nC | 71 nC | 13 nC |
| Logic-Level Gate Drive (VGS(th) < 2.5V) | No (standard threshold) | No | Yes | No | No | Yes |
| Unit Price @ Qty 100 (USD) | 0.94 | 0.92 | 0.45 | 0.38 | 0.55 | 0.42 |
Bảo phân biệt quan trọng
- Industry-leading RDS(on) in SO-8 at 30 V VDS (vsIRLL2705TRPBF)
- Lower gate charge than higher-voltage alternatives (vsIRFR540NPBF)
- Same SO-8 footprint, drop-in compatible (vsIRFR024NTRPBF)
Ghi chú thiết kế
At 10 A continuous current and 8.7 mΩ RDS(on), the IRF8714TRPBF dissipates approximately 0.87 W. The SO-8 package has a junction-to-ambient thermal resistance (theta_JA) of around 50 C/W on a 1 oz copper 1-square-inch pad, producing a junction-temperature rise of ~44 C. Estimated: ambient 25 C + 44 C = 69 C, well within the 150 C junction limit. For continuous 14 A operation, expand copper area to 2-3 sq inches or add top-side airflow to keep junction below 100 C.
The SO-8 footprint used by the IRF8714TRPBF has a JEDEC-standard land pattern that matches thousands of competing parts. Use 2 oz copper on the drain pads (pins 5-8) for best thermal performance, and stitch thermal vias from the top-layer drain pad to an internal ground plane. Solder paste stencil aperture of 1:1 to the land pattern is recommended, with no thermal relief spoke on drain pads to maximize heat conduction.
Do not exceed ±20 V on the gate - even brief transients above this level can rupture the gate oxide of the IRF8714TRPBF. Add a 10 kΩ pull-down on the gate to ensure the FET stays off during MCU power-up. Avoid driving the gate directly from a 3.3 V microcontroller GPIO if VGS(th) is above 2.5 V; in that case use a gate-driver or logic-level variant like IRLL2705TRPBF instead. Keep the gate-drive loop area minimal by placing the gate resistor within 5 mm of the gate pin.
In switching applications, minimize the high-side / low-side FET loop area to reduce parasitic inductance and ringing. Place the IRF8714TRPBF and its high-side counterpart on the same side of the PCB with the input capacitor return path directly beneath them. Use a 4-layer stack-up with a continuous ground plane under the switching node; this keeps di/dt loops small and reduces EMI by 10-15 dB compared to 2-layer designs.
Thông tin tuân thủ
RoHS-compliant and lead-free per Infineon product page. Not AEC-Q100 qualified; for automotive applications use Infineon's automotive-grade StrongIRFET parts.
