IRFU9024NPBF - -55V P-Ch HEXFET 11A 175mOhm TO-251 | Infineon
MPN: IRFU9024NPBF ✓ فعالIRFU9024NPBF جائزہ
A P-channel MOSFET is a type of metal-oxide-semiconductor field-effect transistor in which the channel is doped to conduct when a negative gate-to-source voltage is applied relative to an N-type substrate. In the broader taxonomy, it sits within discrete semiconductors -> transistors -> MOSFETs -> P-channel enhancement-mode power MOSFETs. The P-channel topology is particularly useful in high-side switching where a low-side N-channel would require a charge pump or bootstrap driver, simplifying gate-drive circuitry in battery-powered and load-switch applications.
Key specifications include a continuous drain current of 11 A at Tc, pulsed drain current capability up to 44 A, a maximum drain-to-source on-resistance of 175 mOhm at VGS = -10 V, and a gate threshold voltage of 4 V maximum. The device is fully avalanche-rated, supports dynamic dv/dt, and offers fast switching speeds. The IPAK (TO-251AA) package provides a thermal resistance that allows operation up to 175C junction temperature.
The fifth-generation HEXFET technology employs advanced processing techniques to minimize RDS(on) per silicon area, reducing both conduction losses and package footprint. Its fast intrinsic body diode and optimized FOM (RDS(on) x Qg) make it suitable for synchronous rectifier replacements, low-side switches in half-bridges, and DC load management circuits where reverse-polarity protection or active high-side control is required.
Typical applications include battery protection and reverse-polarity blocking in 12 V / 24 V automotive systems, DC motor drivers for small pumps and fans, power-ORing circuits, hot-swap controllers, and high-side load switches in industrial PLCs. The P-channel structure eliminates the need for a high-side bootstrap supply, simplifying gate-drive design.
When designing with this device, ensure that VGS does not exceed the +/- 20 V absolute maximum, and select a gate resistor to limit ringing below the dv/dt rating. For switching frequencies above 100 kHz, the 12.7 nC Qg and 175 mOhm RDS(on) FOM indicates the part balances conduction and switching losses efficiently.
This page synthesizes distributor pricing, drop-in alternatives in the IPAK footprint, and practical design notes that complement the Infineon datasheet without duplicating it.
کے لیے ڈراپ اِن متبادل IRFU9024NPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRFU9024NPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package.
IRFU9024N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFU9024NPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -11 A |
| Pulsed Drain Current (IDM) | -44 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 175 mOhm max |
| Gate-Source Threshold Voltage (VGS(th)) | -4 V max |
| Total Gate Charge (Qg) | 12.7 nC |
| Input Capacitance (Ciss) | 170 pF |
| Output Capacitance (Coss) | 92 pF |
| Reverse Transfer Capacitance (Crss) | 350 pF |
| Power Dissipation (PD) at Tc=25C | 38 W |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C |
| پیکیج | IPAK (TO-251AA) Through-Hole |
| ماؤنٹنگ ٹائپ | Through Hole |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant |
| Avalanche Rated | Yes |
| Generation | Fifth-Generation HEXFET |
IRFU9024NPBF پن کنفیگریشن
| پن 1 | Gate — MOSFET gate input; drive from 0V (on) to -10V (off, with pull-up to source) |
| پن 2 | Drain — MOSFET drain; electrically connected to the metal tab on the back of the package |
| پن 3 | Source — MOSFET source; for P-channel, this is the more-positive terminal |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IRFU9024NPBF کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive Reverse-Polarity Protection, High-Side Load Switch, DC Motor Drive (Low-Power), Battery Protection / Power Path Management, Power OR-ing / Redundant Supply, Hot-Swap / Inrush Limiting.
Automotive Reverse-Polarity Protection
The IRFU9024NPBF suits 12 V / 24 V automotive reverse-polarity protection circuits where its P-channel topology eliminates the need for a high-side charge pump. Source-to-battery reverse polarity blocking requires only a pull-up to ground at the gate; the -55 V VDS rating provides 2x headroom over a 24 V load-dump transient. The 175 mOhm RDS(on) at VGS=-10V limits continuous conduction loss to roughly 1.9 W at 11 A - acceptable for body-electronics loads below 8 A continuous. The fully avalanche-rated body diode absorbs inductive kickback from motors and solenoids, increasing ruggedness. Designers should add a TVS clamp at the drain for ISO 7637-2 pulse compliance and a 10 kOhm gate-source resistor to prevent false turn-on during cold-crank.
تجویز کردہ
High-Side Load Switch
For industrial PLC and home-automation high-side load switches, the IRFU9024NPBF drives resistive and inductive loads up to 11 A continuous without a bootstrap supply. Its P-channel gate is referenced to ground, so a single logic-level GPIO (with a level shifter) can pull the gate to 0 V to turn the FET on, while a pull-up resistor to the source turns it off. The 12.7 nC Qg enables sub-microsecond switching at modest gate-drive currents. The IPAK through-hole package suits hand-soldered prototypes and field-replaceable modules. Designers should add a gate-source Zener clamp (10 V) to protect against VGS transients during hot-plug events, and use a 100 Ohm gate resistor to limit ringing on long PCB traces.
تجویز کردہ
DC Motor Drive (Low-Power)
The IRFU9024NPBF drives small brushed DC motors, fans, and pumps in the 5 A to 11 A range from a 12 V or 24 V supply. The P-channel half-bridge topology allows a single-supply gate drive without level shifting, simplifying H-bridge designs. The 175 mOhm RDS(on) keeps conduction loss under 2 W at 10 A, and the avalanche-rated body diode clamps inductive kickback at motor turn-off, eliminating the need for an external flyback diode in many applications. The 38 W power dissipation rating supports continuous motor current up to 11 A with adequate heatsinking. Recommended gate resistor is 10-47 Ohm for switching frequencies in the 1-25 kHz PWM range, balancing EMI and switching loss.
تجویز کردہ
Battery Protection / Power Path Management
In battery packs and UPS systems, the IRFU9024NPBF serves as a high-side disconnect switch between the battery stack and the load. Its P-channel configuration connects source to the battery positive and drain to the load, allowing ground-referenced gate control via a single MOSFET or BJT driver. The -55 V VDS handles multi-cell lithium packs up to 12S (50.4 V nominal) with margin. The 175 mOhm RDS(on) at full gate drive dissipates only 1.9 W at 11 A - a fraction of the load power - keeping efficiency above 99%. Designers should add an NTC thermistor to the heatsink and a gate clamp Zener (15 V) for redundant VGS protection during fault conditions.
تجویز کردہ
Power OR-ing / Redundant Supply
The IRFU9024NPBF implements low-loss OR-ing between redundant 12 V or 24 V power supplies. Its body diode carries the load during bring-up, and once the higher-voltage rail dominates, the P-channel MOSFET is biased on to bypass the diode drop - reducing dissipation by 0.4-0.7 V per FET versus Schottky diodes. At 11 A this saves up to 7 W per rail. Two IRFU9024NPBFs can be placed source-to-source to OR two supplies sharing a common ground, with gate-source resistors tied to the lower of the two rails for automatic switchover. Use a small RC snubber (100 Ohm + 100 nF) across drain-source to suppress oscillation during fast current commutation.
تجویز کردہ
Hot-Swap / Inrush Limiting
For -48 V telecom or 24 V industrial hot-swap applications, the IRFU9024NPBF is placed in the high-side return path (P-channel to ground) to limit inrush current into bulk capacitors. Gate is initially held off by a soft-start RC network; as the cap charges, the gate ramps up to full enhancement, limiting di/dt. The -55 V VDS handles -48 V buses with margin for transient ringing, and the 175 mOhm RDS(on) keeps steady-state conduction loss under 1.5 W at 9 A. The fully avalanche-rated body diode absorbs back-EMF from the load during hot-unplug. Pair with a hot-swap controller IC for current-limit and fault-timer functions; add a TVS at the drain for transient suppression.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRFU9024NPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRFU9024N | IRFR9024NPBF |
|---|---|---|---|
| Package | IPAK (TO-251AA) | IPAK (TO-251AA) - same | D-PAK (TO-252) - different footprint |
| Brand | Infineon (formerly International Rectifier) | Infineon | Infineon |
| Polarity | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V | -55 V |
| Continuous Drain Current (ID) | -11 A (Tc=25C) | -11 A (Tc=25C) | -11 A (Tc=25C) |
| RDS(on) at VGS=-10V | 175 mOhm max | 175 mOhm max | 175 mOhm max |
| Total Gate Charge (Qg) | 12.7 nC | 12.7 nC | 12.7 nC |
| Lead Finish | Pb-free (PBF suffix) | SnPb (non-RoHS, no PBF suffix) | Pb-free (PBF suffix) |
| RoHS Compliance | Compliant | Non-compliant (SnPb lead finish) | Compliant |
اہم امتیازی خصوصیات
- Original Infineon HEXFET silicon (now Infineon-owned IP) (بمقابلہGeneric -55V P-channel MOSFETs)
- Pb-free (RoHS) compliant - drop-in for SnPb IRFU9024N (بمقابلہIRFU9024N (non-Pb-free))
- Through-hole IPAK package simplifies hand assembly and field repair (بمقابلہIRFR9024NPBF (D-PAK SMD))
ڈیزائن نوٹس
Estimated: at Tc=25C the IRFU9024NPBF dissipates up to 38 W with a junction-to-case thermal resistance of approximately 1.5 C/W (per the TO-251AA package family). At 11 A continuous with RDS(on)=175 mOhm, conduction loss alone is P = I^2 x R = 21.2 W (worst case at TJ=175C where RDS doubles). A small clip-on heatsink or 100 cm^2 of copper pour on a single-side PCB is required for continuous operation above 5 A. Without a heatsink, derate ID to roughly 3 A continuous in free air at 25C ambient to keep TJ below 125C.
The IPAK (TO-251AA) tab is electrically tied to the drain - it cannot be used as a heatsink if the drain trace is not at the same potential as the heatsink. For P-channel high-side switches, the tab will sit at the load voltage (often the battery positive), so a mica insulator or thermal pad with isolated mounting is needed if a chassis-mounted heatsink is used. Reserve at least 5 mm clearance around the tab for high-voltage spacing (per IPC-2221 for voltages up to 100 V). Through-hole lead bending should use a support tool to avoid cracking the IPAK mold compound.
Three common pitfalls with P-channel MOSFETs: (1) Forgetting that VGS must go negative relative to source to turn the FET on - applying 0V with source pulled up to 12V still gives VGS=+12V (off state). (2) Exceeding the +/- 20 V VGS absolute maximum during gate transient ringing - add a 10-15 V Zener from gate to source. (3) Computing continuous current from the 25C Tc rating only - the ID vs Tc curve derates rapidly; at 100C case the current drops to roughly 60% of the 25C value.
Place a 100 Ohm gate resistor as close to the gate pin as possible to damp LC ringing from the gate-source capacitance and PCB trace inductance. For switching frequencies above 50 kHz, route the gate trace away from the drain trace to minimize capacitive coupling that can cause dv/dt-induced turn-on. Keep the source-return trace short and wide to minimize common-source inductance, which otherwise creates a negative feedback voltage during switching and slows turn-off. Reference: Infineon application note AN-936 for P-channel MOSFET PCB layout guidelines.
تعمیل کی معلومات
RoHS compliant per the 'PBF' (Pb-free) suffix and Infineon product page. AEC-Q100 qualification status not stated in the verified web data - assumed not_applicable for this through-hole power MOSFET. Halogen-free status not stated in the verified web data - set to unknown.
