IRF520NPBF - 100V 9.7A N-Channel HEXFET MOSFET | Infineon
MPN: IRF520NPBF ✓ فعالIRF520NPBF جائزہ
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate power in electronic circuits. The MOSFET hierarchy descends from power transistors -> discrete semiconductors -> power management components, and within Infineon's HEXFET family, the IRF520NPBF belongs to the standard-gate, mid-voltage class designed for general-purpose switching and amplification.
Key specifications include a static drain-to-source on-resistance (R_DS(on)) of 200 mOhm maximum at V_GS = 10 V, a total gate charge (Q_g) of 16.7 nC, and a power dissipation rating of 48 W at Tc. The device features a logic-compatible threshold, avalanche-rated single-pulse ruggedness, and an intrinsic body diode suitable for inductive commutation. HEXFET technology uses a vertical DMOS structure to minimize conduction loss while keeping switching losses low.
The 200 mOhm R_DS(on) at 9.7 A continuous current delivers conduction losses of roughly 19 W at full rated load, manageable with the TO-220AB copper tab. The fast switching capability (low Q_g and Q_rr) supports PWM frequencies from a few kHz to several hundred kHz, depending on driver design.
Typical applications include DC motor drives, relay and solenoid replacement, high-side/low-side switching regulators, Class D audio amplifiers, and general-purpose inverter stages. The TO-220AB package allows simple through-hole PCB assembly and easy attachment to a heatsink with a single screw.
When designing with this device, ensure V_GS = 10 V is available at the gate for full enhancement. Always include a gate-source resistor (typically 10-100 kOhm) to prevent floating-gate turn-on, and verify SOA at start-up and fault conditions.
This page synthesizes distributor pricing, drop-in same-package alternatives, and design guidance that goes beyond a single datasheet reading. We cross-reference the IRF520NPBF against pin-compatible HEXFET alternatives from Infineon and competitor N-channel MOSFETs in the TO-220AB footprint.
کے لیے ڈراپ اِن متبادل IRF520NPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRF520NPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Total Gate Charge (Qg), Operating Temperature Range, RoHS Status.
IRF540NSTRLPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFZ44NPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRLZ34NPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF5210PBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFU9024NPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR4615TRLPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF520NPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | HEXFET |
| FET Type | N-Channel |
| Drain-to-Source Voltage (V_DSS) | 100 V |
| Continuous Drain Current (I_D) at Tc | 9.7 A |
| Gate-to-Source Voltage (V_GS) max | ±20 V |
| R_DS(on) max at V_GS=10V | 200 mOhm |
| Total Gate Charge (Q_g) | 16.7 nC |
| Power Dissipation (P_D) at Tc | 48 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +175C |
| پیکیج | TO-220AB (through-hole) |
| ماؤنٹنگ ٹائپ | Through Hole |
| MSL لیول | 1 (unlimited) |
| RoHS اسٹیٹس | Compliant (Pb-free) |
| Lead-Free Finish | Yes (PBF suffix) |
| Technology | HEXFET (vertical DMOS) |
IRF520NPBF پن کنفیگریشن
| پن 1 | Gate — Gate control input (V_GS drive, threshold ~2-4 V, full enhancement at 10 V) |
| پن 2 | Drain — Drain terminal (high-voltage load connection, also electrically bonded to metal tab) |
| پن 3 | Source — Source terminal (low-side return, typically connected to circuit ground) |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IRF520NPBF کے لیے موزوں ہے 6 ایپلیکیشنs: DC Motor Drive (H-Bridge / Half-Bridge), Relay / Solenoid Replacement (Solid-State Switch), Class D Audio Amplifier Output Stage, Linear / Switching Voltage Regulator Pass Element, Inverter / UPS Power Stage, Automotive 12V Load Switching.
DC Motor Drive (H-Bridge / Half-Bridge)
The IRF520NPBF fits low-power DC motor drive circuits at 12-48 V bus up to 9.7 A continuous. Its 200 mOhm R_DS(on) at V_GS=10V keeps conduction loss modest, while the fast HEXFET switching supports PWM frequencies from a few hundred Hz to 20 kHz for efficient speed control. The TO-220AB tab provides a clean heatsink-mount for sustained loads, and the intrinsic body diode handles inductive flyback during PWM commutation. In half-bridge and H-bridge topologies, two IRF520NPBFs (high-side plus low-side) drive brushed DC motors in robotics and small EVs.
تجویز کردہ
Relay / Solenoid Replacement (Solid-State Switch)
The IRF520NPBF acts as a low-side solid-state switch to replace mechanical relays driving 12-100 V solenoids, valves, and LED strings. Its 9.7 A continuous rating covers most automotive and industrial loads, and the 200 mOhm R_DS(on) ensures less than 2 V drop at full load. With switching times under 100 ns, the IRF520NPBF outperforms mechanical relays in lifetime and silent operation. The TO-220AB package simplifies mounting near the load, and a 10 kOhm gate pull-down prevents false turn-on during controller reset.
تجویز کردہ
Class D Audio Amplifier Output Stage
The IRF520NPBF is well-suited for low-power Class D audio amplifiers in the 50-100 W range. Its fast switching (~50 ns turn-on) keeps PWM dead-time short, preserving audio fidelity, while the 100 V rating provides ample headroom for 24-36 V bus designs. The HEXFET die ruggedness handles the high di/dt of audio output stages, and the TO-220AB tab simplifies thermal management in stereo and subwoofer amplifier assemblies. Two IRF520NPBFs per channel form a complementary half-bridge output.
تجویز کردہ
Linear / Switching Voltage Regulator Pass Element
When used as the pass element in a linear regulator or as the switching device in a buck/boost converter, the IRF520NPBF provides a 100 V / 9.7 A platform suitable for industrial 24-48 V bus designs. The 200 mOhm R_DS(on) keeps conduction loss low in synchronous rectifier positions, while the 48 W power dissipation rating handles continuous loads when properly heatsunk. For PWM switching regulators above 50 kHz, the modest 16.7 nC Q_g supports standard gate drivers without excessive drive loss.
تجویز کردہ
Inverter / UPS Power Stage
The IRF520NPBF supports low-power inverter and UPS systems operating from 24-72 V DC bus, delivering up to 9.7 A continuous for AC output stages. The HEXFET avalanche rating absorbs the energy stored in inductive loads and transformer leakage, enhancing system reliability. Two or four IRF520NPBFs in a full-bridge configuration produce modified sine-wave or square-wave output for backup power and solar micro-inverter applications. The TO-220AB package allows simple bolt-on heatsinking.
تجویز کردہ
Automotive 12V Load Switching
The IRF520NPBF operates reliably in automotive 12 V load-switching applications including lamp drivers, fan controls, and accessory relays. While not AEC-Q101 qualified, its -55C to +175C junction temperature range and HEXFET ruggedness have made it a long-standing choice for non-safety automotive subsystems. The 100 V V_DSS provides generous transient margin against load-dump events when paired with a TVS clamp. The TO-220AB tab supports chassis-mount thermal management.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRF520NPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRF540NSTRLPBF | IRFZ44NPBF | IRLZ34NPBF | IRF5210PBF | IRFU9024NPBF | IRFR4615TRLPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel (logic-level) | P-Channel (complement) | P-Channel | N-Channel |
| V_DSS | 100 V | 100 V | 55 V | 55 V | -100 V | -50 V | 150 V |
| Continuous Drain Current | 9.7 A | 33 A | 49 A | 30 A | -5.6 A | -11 A | 33 A |
| R_DS(on) max at V_GS=10V | 200 mOhm | 44 mOhm | 17.5 mOhm | 50 mOhm | 600 mOhm | 280 mOhm | 42 mOhm |
| Power Dissipation | 48 W | 130 W | 94 W | 68 W | 43 W | 38 W | 144 W |
اہم امتیازی خصوصیات
- Higher current and lower R_DS(on) for motor drives above 10 A (بمقابلہIRF540NSTRLPBF)
- Lower conduction loss at low V_GS drive voltages (بمقابلہIRLZ34NPBF)
- Complementary P-channel partner for H-bridge designs (بمقابلہIRF5210PBF)
ڈیزائن نوٹس
Estimated: At 9.7 A continuous with a V_DS drop near 200 mOhm, conduction loss reaches roughly 19 W at full rated current. TO-220AB theta_JA is around 62 C/W without heatsink, which would push junction temperature above safe limits. Always bolt the tab to a heatsink sized to keep Tj below 150 C. For lower thermal resistance, use a clip-on heatsink with thermal compound and ensure airflow over the tab.
Always include a 10 kOhm gate-to-source pull-down resistor to prevent false turn-on from Miller coupling or floating-gate conditions during controller reset. Drive V_GS to 10 V (well above the threshold) for full enhancement and lowest R_DS(on). Under-driving the gate below 8 V causes partial enhancement and dramatically higher conduction loss. For logic-level microcontrollers (3.3 V), use a gate driver or a logic-level part like IRLZ34NPBF instead.
Keep the gate drive loop short and narrow - place the gate resistor and pull-down as close to the gate pin as possible. Use a ground plane to minimize source inductance, which causes ground bounce and unwanted V_GS spikes. For high di/dt switching, add a small RC snubber (gate resistor 10-47 Ohm plus optional 100 Ohm + 1 nF across drain-source) to control ringing. The TO-220AB tab is electrically tied to the drain, so heatsink isolation is required if the drain is not at ground potential.
تعمیل کی معلومات
RoHS-compliant Pb-free finish per 'PBF' suffix. Not AEC-Q100/101 qualified - not recommended for new automotive safety designs where Infineon BTS-series or IRFS-series AEC parts are preferred.
