IRS21091STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IRS21091STRPBF ✓ فعالIRS21091STRPBF جائزہ
A half-bridge gate driver is a type of power-management IC that sits between a low-voltage control signal (typically from a microcontroller or PWM controller) and the gate of a high-voltage power switch. The high-side output uses a bootstrap capacitor technique to generate a floating supply above the bus voltage, which is necessary to turn on an N-channel MOSFET or IGBT in the upper leg of the half-bridge. Half-bridge drivers belong to the broader family of gate drivers, which in turn sit within the power management IC hierarchy.
Key features of the IRS21091STRPBF include a 600V floating channel, typical 290 mA source / 600 mA sink gate-drive current, a low 750 ns propagation delay, a logic input compatible with standard CMOS or LSTTL outputs down to 3.3 V logic, an integrated shutdown pin, and user-programmable deadtime to prevent shoot-through. The matched propagation delays between the two channels keep PWM duty-cycle distortion low. The output drivers use a high-pulse-current buffer stage designed to minimize driver cross-conduction.
Architecturally, the part uses Infineon's high-voltage BCDMOS process. A level-shifter couples the low-voltage logic input to the high-side floating channel, while the bootstrap diode (or external bootstrap diode) charges the bootstrap capacitor off the VCC rail on every low-side cycle. The integrated deadtime control lets designers trade margin against switching loss without an external timing network.
Typical applications include motor drives, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), half-bridge and full-bridge converters, and any high-voltage synchronous-rectification topology where IGBT or MOSFET gates must be driven above the bus rail. Designers choose this part when they need 600V tolerance in a compact 8-SOIC, with logic-level inputs that can be driven directly from a 3.3 V MCU.
A primary design tip: the bootstrap capacitor value is critical. Too small a capacitor causes the high-side UVLO to trip under load; too large slows startup. A 0.1 uF to 1 uF X7R ceramic is typical, sized using the Qg of the driven MOSFET, the switching frequency, and the gate charge per cycle.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IRS21091STRPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRS21091STRPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, RoHS Status, Configuration, Input Logic Compatibility, Logic Input Compatibility.
IR2109SPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRS21091SPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRS2128SPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IR2304SPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRS21867STRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRS21091STRPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Driven Channels | High-Side and Low-Side, Synchronous |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Input Compatibility | CMOS or LSTTL, down to 3.3 V |
| Output Polarity | Non-Inverting |
| Supply Voltage (VCC) | 10 V to 20 V |
| Floating Channel Offset Voltage | up to +600 V |
| Negative Transient Tolerance | Yes, dV/dt immune |
| Source Current (typ.) | 0.29 A |
| Sink Current (typ.) | 0.6 A |
| Propagation Delay (typ.) | 750 ns |
| Deadtime Control | Programmable |
| Shutdown Pin | Yes |
| پیکیج | 8-SOIC (0.154", 3.90 mm width) |
| Packaging | Tape & Reel |
| RoHS اسٹیٹس | Compliant |
IRS21091STRPBF پن کنفیگریشن
| پن 1 | VCC — Logic and low-side gate-drive supply (10 V to 20 V) |
| پن 2 | HIN — Logic input for high-side output (CMOS/LSTTL, 3.3 V compatible) |
| پن 3 | LIN — Logic input for low-side output (CMOS/LSTTL, 3.3 V compatible) |
| پن 4 | /SD — Shutdown input, active low (logic-low disables both outputs) |
| پن 5 | DT — Deadtime programming pin - resistor to VCC sets deadtime |
| پن 6 | VSS / COM — Ground and low-side gate-drive return |
| پن 7 | LO — Low-side gate-drive output |
| پن 8 | VS — High-side floating supply return (switch node) |
عام استعمالات
IRS21091STRPBF کے لیے موزوں ہے 7 ایپلیکیشنs: Half-Bridge Motor Drive (H-Bridge and 3-Phase), Switch-Mode Power Supply (SMPS) Half-Bridge and Full-Bridge, Uninterruptible Power Supply (UPS) Inverter Stage, Solar Inverter DC-DC Boost / Half-Bridge Stage, Induction Heating Resonant Inverter, Automotive 48V Mild-Hybrid DC-DC Converter, Class D Audio Amplifier Output Stage.
Half-Bridge Motor Drive (H-Bridge and 3-Phase)
The IRS21091STRPBF drives the high-side and low-side IGBTs or N-channel MOSFETs of one half-bridge leg, with the 600 V floating channel covering 120/240 V AC bus rails and 400 V DC-link motors. Its 0.29 A source / 0.6 A sink gate current is sufficient for MOSFETs in the 30-100 nC Qg class typical of 600 V motor-drive inverters, while programmable deadtime prevents shoot-through between the upper and lower switches. According to the datasheet, the 3.3 V CMOS-compatible inputs allow direct connection to MCU PWM outputs without level shifters. The SO-8 footprint is well-suited to compact 3-phase inverter modules where PCB area is constrained. Estimated: a 100 kHz switching frequency with a 50 nC Qg MOSFET requires about 5 mA average gate current - well within the IRS21091's capability.
تجویز کردہ
Switch-Mode Power Supply (SMPS) Half-Bridge and Full-Bridge
In half-bridge and full-bridge SMPS topologies, the IRS21091STRPBF drives the primary-side switches of the converter with 600 V margin for 120/240 VAC rectified bus rails up to 400 VDC. According to the manufacturer datasheet, the floating channel tolerates negative transients on the high-side return, which is critical for hard-switched bridges where ringing couples back through the transformer's leakage inductance. The 750 ns propagation delay is matched between channels, keeping PWM duty-cycle accuracy high at switching frequencies up to 100 kHz. The integrated shutdown pin allows the system controller to disable both outputs on a UV/OV fault without external gating logic. Estimated: at 100 kHz with 100 nC Qg MOSFETs, total gate-drive loss is approximately 0.1 W per switch - acceptable for a 500 W PSU without heatsinking the driver.
تجویز کردہ
Uninterruptible Power Supply (UPS) Inverter Stage
In UPS systems, the IRS21091STRPBF drives the IGBT half-bridge stages of the line-interactive or online double-conversion inverter that synthesizes 120/230 VAC from a battery bus. The 600 V floating channel and dV/dt immunity handle the harsh switching environment of the H-bridge output filter, while the integrated shutdown pin enables fast disconnect on output overcurrent or short-circuit. The 3.3 V logic input allows direct drive from a low-voltage DSP or MCU PWM peripheral, removing the need for external level shifters. The 8-SOIC package is suitable for compact 1-3 kVA UPS modules where PCB density is high. Estimated: with a 20 kHz switching frequency and 50 nC IGBT, total driver loss is around 0.05 W per leg - well below the 8-SOIC's 0.5 W thermal limit.
تجویز کردہ
Solar Inverter DC-DC Boost / Half-Bridge Stage
The IRS21091STRPBF drives the IGBT or MOSFET half-bridge in a solar inverter's DC-DC boost stage, taking a panel-side voltage up to 600 V and switching at 20-50 kHz for energy extraction. The floating channel is rated to 600 V, sufficient for residential and small-commercial PV inverter bus rails. Programmable deadtime lets designers optimize the trade-off between switching loss and shoot-through margin in the high-current boost leg. The shutdown pin allows fast disable of the boost on input overvoltage or inverter grid-fault conditions. According to the manufacturer datasheet, the part is dV/dt immune, which is critical in solar applications where the long DC wiring introduces large dV/dt transients back into the bridge. Estimated: at 30 kHz with 80 nC MOSFET, gate-drive loss is around 0.05 W - negligible compared to the switching loss of the main power device.
تجویز کردہ
Induction Heating Resonant Inverter
The IRS21091STRPBF drives the resonant half-bridge in a domestic induction-heating cooktop, where the 600 V floating channel handles the rectified 230/400 VDC bus and the dV/dt immunity is critical for the high dI/dt transitions of the resonant tank. The matched channel-to-channel propagation delay (750 ns) keeps the operating frequency stable across the resonant tank's tuning range, and the programmable deadtime allows precise control of the zero-voltage-switching (ZVS) window. The 3.3 V logic input allows direct connection to the cooktop's MCU, which typically operates at 3.3 V. The 8-SOIC package fits the compact cooktop power module, where PCB area is at a premium. Estimated: at 30-50 kHz with 150 nC IGBT, total driver loss is around 0.1-0.2 W per leg - well within the 8-SOIC's thermal limit.
تجویز کردہ
Automotive 48V Mild-Hybrid DC-DC Converter
The IRS21091STRPBF drives the high-side and low-side switches of a 48V mild-hybrid DC-DC converter that interfaces the 48V bus with the 12V battery rail. The 600 V floating channel provides comfortable margin over the 48V bus transients (which can spike to 80-100V during load dump) and the dV/dt immunity keeps the driver robust under the noisy automotive environment. The 3.3V logic input allows direct connection to an automotive MCU's PWM peripheral, removing external level-shifter components and reducing BOM cost. The integrated shutdown pin provides a fast-disconnect path for OVP, OCP, and reverse-battery fault conditions. According to the manufacturer datasheet, the device is rated for -40C to +125C operation, suitable for under-hood automotive modules. Estimated: at 100 kHz with 50 nC MOSFETs, the driver loss is around 0.05 W per switch - well within the SO-8 thermal envelope.
تجویز کردہ
Class D Audio Amplifier Output Stage
The IRS21091STRPBF drives the high-side and low-side N-channel MOSFETs of a Class D audio amplifier's half-bridge output stage, with the 600V floating channel providing headroom for automotive and prosumer 50-100V bus rails. The matched propagation delay (750 ns) between the two channels preserves PWM symmetry, which is critical for low THD+N at high audio frequencies. The 3.3V CMOS logic input allows direct connection to a DSP modulator, removing external logic-level shifters. According to the manufacturer datasheet, the integrated shutdown pin provides a fast mute path on input signal-loss or DC fault detection. Estimated: at 400 kHz PWM with 30 nC MOSFETs, the driver loss is about 0.05 W per switch - well within the 8-SOIC's thermal envelope.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRS21091STRPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IR2109SPBF | IRS21091SPBF | IRS2128SPBF | IR2304SPBF | IRS21867STRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Floating Channel Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Source Current (typ.) | 0.29 A | 0.29 A | 0.29 A | 0.29 A | 0.13 A | 2.0 A |
| Sink Current (typ.) | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.27 A | 2.0 A |
| Propagation Delay (typ.) | 750 ns | 750 ns | 750 ns | 750 ns | 200 ns | 180 ns |
| Shutdown Pin | Yes (active low) | No | Yes | Yes (with OC protection) | No (internal deadtime only) | Yes |
| Programmable Deadtime | Yes (DT pin) | No (internal fixed) | Yes | No | No (internal fixed 520 ns) | Yes (DT pin) |
اہم امتیازی خصوصیات
- Integrated shutdown pin and programmable deadtime (بمقابلہIR2109SPBF)
- Same 8-SOIC footprint as the IR2304SPBF but with user-tunable deadtime (بمقابلہIR2304SPBF)
- Lower drive strength than the IRS21867STRPBF but with same 8-SOIC footprint (بمقابلہIRS21867STRPBF)
ڈیزائن نوٹس
Bootstrap capacitor sizing is critical for the high-side channel. The bootstrap capacitor (CBOOT) must supply the gate charge (Qg) of the high-side MOSFET plus the quiescent current of the high-side driver for the duration of one PWM cycle. A starting-point formula: CBOOT >= Qg_total / dV, where dV is the allowable droop on CBOOT (typically 0.1-0.5 V). For a 100 nC Qg MOSFET and 0.2 V droop, CBOOT >= 0.5 uF. Use X7R ceramic with voltage rating above VCC + 15 V headroom. Estimated: at 100 kHz with 50 nC MOSFET, Qg_total per cycle is around 50 nC, and a 0.47 uF X7R 50V capacitor is a robust choice. Use a bootstrap diode with ultrafast reverse recovery (trr < 50 ns) - the integrated bootstrap diode is not present on this part; an external UF4007 or ES1J is typical.
PCB layout for half-bridge gate drivers must keep the high-current loop (VCC - bootstrap - high-side MOSFET - low-side MOSFET - VSS) as small as possible to minimize parasitic inductance. Place the bootstrap capacitor (CBOOT) directly between pin 1 (VCC) and pin 8 (VS) of the IRS21091STRPBF, and the VCC bypass capacitor (1 uF X7R) directly between pin 1 and pin 6 (VSS). According to the manufacturer datasheet, the high-side gate-drive loop (HO - HS - external gate resistor - gate of high-side MOSFET) should be a tight loop of less than 1 square cm to avoid ringing. Use a ground plane on the bottom layer tied to pin 6 (VSS) to provide a low-impedance return for the low-side gate-drive current. Place the deadtime resistor (RDT) close to pin 5 (DT) to minimize noise pickup on the timing node.
Three common pitfalls to avoid when designing with the IRS21091STRPBF. (1) Do not leave the DT pin floating - the deadtime defaults to minimum and shoot-through can occur at high load. (2) The /SD pin must be pulled high (to VCC through 10 kohm, or driven by MCU) for normal operation; leaving it floating disables both outputs. (3) The VCC supply must be locally decoupled with at least 1 uF X7R within 5 mm of pin 1; insufficient decoupling causes VCC to dip below the UVLO threshold during high-side switching, leading to spurious shutdowns. Estimated: total gate charge for a 600 V, 20 A IGBT is around 100-150 nC, so 1 uF VCC decoupling is appropriate. Verify against the manufacturer's application note AN-1123 before finalizing layout.
The 8-SOIC package of the IRS21091STRPBF has a typical theta_JA of 150 C/W on a standard 4-layer JEDEC test board, and approximately 100 C/W on a board with 1 square inch of continuous copper pour on the top layer. Estimated: at VCC=15V, switching frequency 100 kHz, and driving a 100 nC Qg MOSFET, total gate-drive power dissipation is approximately 2 * VCC * Qg * fsw = 2 * 15 * 100e-9 * 100e3 = 0.3 W. With 150 C/W theta_JA, junction temperature rise is around 45 C above ambient, which is well within the -40C to +125C operating range. For high-frequency designs (>200 kHz) or large Qg MOSFETs (>200 nC), consider a copper pour on the board or upgrading to the IRS21867STRPBF (8-SOIC, 2.0/2.0 A source/sink) for better thermal margin.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Lead-free per SO-8 standard finish. AEC-Q100 qualification not stated on the part; for AEC-Q100-qualified automotive 600 V half-bridge drivers, see Infineon's IRS21091 automotive-grade variants or the IR2304S automotive version. Halogen-free status not explicitly stated in the verified data.
