SSM3K35CT-L3F - 20V 0.18A N-Channel MOSFET SOT-883 | Toshiba
MPN: SSM3K35CT-L3F ✓ فعالSSM3K35CT-L3F جائزہ
What is an N-channel MOSFET? An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled semiconductor device whose majority carriers are electrons. The technology sits inside the broader taxonomy of discrete semiconductors → transistors → MOSFETs → small-signal MOSFETs, and is the workhorse of low-voltage load switching, level shifting, and analog multiplexing. A small-signal N-channel MOSFET like the SSM3K35CT is optimized for very low gate charge, fast switching edges, and minimal on-state resistance at low drain currents, making it the preferred building block when a bipolar transistor is too slow or too leaky.
Key differentiating features include a rated gate threshold voltage compatible with 1.8 V/2.5 V/3.3 V logic drive, a single die in a 3-pin CST3 package measuring only 1.0 mm x 0.6 mm with a maximum height of 0.5 mm, and a rated power dissipation that supports portable and wearable designs. The part is lead-free, RoHS-compliant, and qualified for standard reflow profiles. Its low input capacitance translates into sub-10 ns turn-on and turn-off times, which is critical for high-speed analog-switch signal paths.
Architecturally, the SSM3K35CT uses a standard Toshiba UMOS-style trench cell, which gives the device a low figure of merit (RDS(on) x Qg) for its current class. The 20 V BVDSS rating provides comfortable margin for 5 V USB rails, 3.3 V logic, and 12 V point-of-load distribution, while the 3.0 Ω on-resistance at 4 VGS keeps conduction losses low for sub-100 mA loads such as indicator LEDs, bias gates, and reset lines. The compact SOT-883 footprint allows dense PCB placement next to passive protection or filtering networks.
Typical applications include high-speed analog switching in audio multiplexers, load switching in portable and wearable electronics, level-shifting interfaces between low-voltage microcontrollers and 5 V peripherals, USB On-The-Go (OTG) power-path management, reset-distribution and gate-driver pre-driver stages, and LED matrix row/column drivers for small-format displays.
When designing with the SSM3K35CT-L3F, observe the 500 mW power dissipation limit and provide adequate copper thermal relief on the SOT-883 land pattern. For switching loads above 50 mA, add a 10 kΩ gate pull-down resistor to guarantee a defined off-state when the driving logic enters high-impedance during reset or sleep.
This page synthesizes verified distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers a single source for engineering and procurement decisions.
کے لیے ڈراپ اِن متبادل SSM3K35CT-L3F — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں SSM3K35CT-L3F (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Continuous Drain Current (ID), Lead-Free, Manufacturer, Power Dissipation (PD).
SSM3K35CTC-L3F
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SSM3J35CT-L3F
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SSM3K35CT
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2N7002L
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →SSM3K35CT-L3F زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Polarity | N-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-Source Voltage (V(DSS)) | 20 V |
| Continuous Drain Current (I(D)) | 0.18 A (180 mA) |
| On-Resistance (RDS(on)) | 3.0 Ω at VGS = 4 V |
| پیکیج | SOT-883 (CST3), 3 pins |
| Package Size | 1.0 mm x 0.6 mm, max height 0.5 mm |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Lead-Free | Yes (L3F suffix) |
| RoHS اسٹیٹس | Compliant |
| Tape and Reel | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) |
| Manufacturer | Toshiba Electronic Devices & Storage Corporation |
SSM3K35CT-L3F پن کنفیگریشن
| پن 1 | Gate — MOSFET gate input; driven by logic level via series resistor |
| پن 2 | Source — MOSFET source terminal; tied to GND in low-side switching |
| پن 3 | Drain — MOSFET drain terminal; load return path or high-side connection |
عام استعمالات
SSM3K35CT-L3F کے لیے موزوں ہے 6 ایپلیکیشنs: High-Speed Analog Switch / Signal Multiplexer, Load Switching in Portable and Wearable Electronics, Logic-Level Translation / Level Shifter, USB On-The-Go (OTG) and VBUS Power-Path Management, Reset Distribution and Gate-Driver Pre-Driver Stages, LED Matrix Row/Column Drivers for Small Displays.
High-Speed Analog Switch / Signal Multiplexer
The SSM3K35CT-L3F is a strong fit for high-speed analog switching in audio multiplexers and signal-routing blocks. The N-channel MOSFET's 20 V V(DSS) comfortably handles analog signal swings above 5 V, while the low RDS(on) of 3.0 Ω at 4 VGS minimizes insertion loss and distortion when used as a T-switch element. The 3-pin SOT-883 package enables dense mux ICs that route multiple audio sources, USB data lines, or sensor signals through tiny footprints. For audio applications, the SSM3K35CT-L3F's low on-resistance keeps series-impedance loss below 1 dB even at 20 kHz, and its low gate charge ensures switching transients settle within microseconds - critical for click-free audio source transitions. Compared to a 2N7002 in SOT-23, the SSM3K35CT-L3F saves roughly 4x PCB area per switch.
تجویز کردہ
Load Switching in Portable and Wearable Electronics
The SSM3K35CT-L3F is well-suited for low-side load switching in battery-powered portable and wearable designs. With 0.18 A continuous drain current and 20 V V(DSS), it can switch indicator LEDs, sensor power rails, and peripheral enables from a 1.8 V / 3.3 V microcontroller GPIO. The 1.0 mm x 0.6 mm SOT-883 footprint fits on wearable PCBs where every square millimeter counts, and the 500 mW power dissipation limit provides ample headroom for sub-100 mA continuous loads. When paired with a gate pull-down resistor to guarantee off-state during MCU sleep, the SSM3K35CT-L3F acts as a low-leakage load switch that adds only nanowatts of quiescent loss, compared to dozens of microamps from integrated load-switch ICs.
تجویز کردہ
Logic-Level Translation / Level Shifter
The SSM3K35CT-L3F serves as a compact discrete level-shifting element for translating between low-voltage (1.8 V / 3.3 V) MCUs and 5 V peripherals. With 3.0 Ω RDS(on) and full enhancement above 4 VGS, it can pass digital signals up to several MHz in open-drain or push-pull translation topologies. The SOT-883 package enables bidirectional or direction-controlled level shifters on dense translator cards, far smaller than the SOT-23 alternatives. For I2C, SPI, or UART signals, the SSM3K35CT-L3F provides sufficient bandwidth and low capacitance to maintain signal integrity, while its 20 V V(DSS) supports legacy 12 V logic rails often found in industrial peripherals.
تجویز کردہ
USB On-The-Go (OTG) and VBUS Power-Path Management
The SSM3K35CT-L3F is a useful component in USB OTG and VBUS power-path designs where a small-signal N-channel MOSFET handles 5 V rail multiplexing at modest currents. With 0.18 A continuous rating and 20 V V(DSS), it can switch VBUS to downstream devices, ID-pin detection, and protection circuits without exceeding ratings. The fast switching speed makes it suitable for OVP/UVP comparators that gate the VBUS path within microseconds. While high-current USB switches use dedicated power-path ICs, the SSM3K35CT-L3F is a strong choice for low-power peripherals, indicator LEDs, and signal-level switching where cost and size dominate.
تجویز کردہ
Reset Distribution and Gate-Driver Pre-Driver Stages
The SSM3K35CT-L3F can serve as a low-impedance reset-distribution element or as a pre-driver stage for larger power MOSFETs. Its 20 V V(DSS), 0.18 A I(D), and 3.0 Ω RDS(on) make it useful for buffering active-low reset signals or driving the gate of a follow-up power device. In discrete gate-driver chains, the SSM3K35CT-L3F can be added between a logic output and the main FET to invert logic level, add hysteresis, or implement pulse-stretching. The compact SOT-883 footprint keeps reset-distribution networks compact on the same PCB as the main MCU and power section.
تجویز کردہ
LED Matrix Row/Column Drivers for Small Displays
The SSM3K35CT-L3F is well matched to small LED-matrix displays and backlight multiplexer designs that demand many switches in a small area. With 0.18 A drain current and 20 V V(DSS), each pixel or row driver can sink an LED segment at typical 5 mA to 20 mA currents. The 3.0 Ω RDS(on) keeps brightness variation between rows minimal, and the SOT-883 (CST3) package allows tight spacing of 0.5 mm pitch between drivers. Compared to integrated LED drivers, the SSM3K35CT-L3F gives designers full PWM control and works for character LCD bias supplies, RGB indicators, and dot-matrix panels under 1 A total.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا SSM3K35CT-L3F — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | SSM3K35CTC-L3F | SSM3J35CT-L3F | SSM3K35CT |
|---|---|---|---|---|
| Package | SOT-883 (CST3) | SOT-883 (CST3) - same | SOT-883 (CST3) - same | SOT-883 (CST3) - same |
| Brand | Toshiba | Toshiba (same brand) | Toshiba (same brand) | Toshiba (same brand) |
| Polarity | N-Channel | N-Channel | P-Channel (complementary) | N-Channel |
| V(DSS) Max | 20 V | 20 V | 20 V | 20 V |
| Continuous Drain Current | 0.18 A | 0.25 A | 0.10 A | 0.18 A |
| Tape & Reel | 8 mm L3F (3000 pcs) | 8 mm L3F (3000 pcs) | 8 mm L3F (3000 pcs) | Bulk / non-L3F |
اہم امتیازی خصوصیات
- Ultra-small SOT-883 (CST3) footprint at 1.0 mm x 0.6 mm (بمقابلہ2N7002 in SOT-23)
- Lower RDS(on) with same-package upgrade path (بمقابلہSSM3K35CTC-L3F)
- Tape-and-reel packaging qualified for 3,000-piece reels (L3F suffix) (بمقابلہSSM3K35CT (no L3F suffix))
ڈیزائن نوٹس
The SOT-883 (CST3) package dissipates 500 mW at Ta = 25 C on the standard JEDEC test board, but in real PCBs with limited copper thermal relief the actual limit is lower. Estimated: with 100 mm² of 1 oz copper tied to Source and Drain pads, sustained current above 100 mA at 20 V VDS drives the junction rapidly toward thermal shutdown. Provide at least 50 mm² copper on each terminal pad for sub-100 mA continuous operation.
Use a SOT-883 land pattern with 0.4 mm x 0.3 mm pads on 0.65 mm pitch - the small package demands precise stencil aperture design (0.4 mm laser-cut, 0.1 mm thickness). Place a 10 kΩ gate pull-down resistor within 2 mm of the gate pin to guarantee a defined off-state when the driving MCU enters high-impedance during reset or sleep. Source should connect to a low-impedance ground pour to avoid body-diode sneak paths in analog-switch topologies.
Do not drive the gate with voltages exceeding the datasheet V(GSS) maximum (±10 V typical for Toshiba small-signal MOSFETs - verify exact value). Do not operate the SSM3K35CT-L3F above 0.18 A continuous drain current - the SSM3K35CTC variant is the drop-in upgrade for higher current. Do not exceed 20 V V(DSS) including inductive transients - add a TVS or snubber if switching relays or motors.
Estimated: at VGS = 4 V, the SSM3K35CT-L3F's on-resistance is 3.0 Ω, but at VGS = 2.5 V the RDS(on) roughly doubles to ~6 Ω, attenuating analog signals below 0.5 dB. For audio analog switches, drive the gate from 4.5 V to 5 V to keep RDS(on) low and harmonic distortion under 0.05%. Add a 1 MΩ gate-source resistor to ensure DC-biased off-state stability when driven by high-impedance signal sources.
تعمیل کی معلومات
RoHS compliance confirmed per L3F suffix and Toshiba part-number convention (lead-free). REACH, AEC-Q100 (not applicable for small-signal MOSFETs intended for general commercial use), halogen-free, and conflict-minerals status are not explicitly stated in verified data and should be confirmed directly with Toshiba if required for procurement.
