STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
MPN: STW45NM60-H ✓ فعالSTW45NM60-H جائزہ
Key specifications include a 600 V drain-source breakdown voltage (650 V at TJMAX), 45 A continuous drain current at 25 °C case, and 417 W total power dissipation. The device offers a typical on-resistance of 0.09 Ω at VGS = 10 V, gate threshold of 4 V, and 100% avalanche-tested ruggedness. The TO-247-3 through-hole package delivers superior thermal dissipation for high-current switching topologies.
What is a MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion. Within the MOSFET family, power MOSFETs are classified into categories such as planar MOSFETs, trench MOSFETs, and super-junction (charge-balance) MOSFETs. The MDmesh family - where this STW45NM60-H belongs - is a super-junction N-channel MOSFET optimized for high-voltage (>500 V) switching applications. The STW45NM60-H is a discrete power transistor used in power management and conversion circuits.
Architecture-wise, the MDmesh cell combines a multi-drain vertical structure with horizontal PowerMESH metallization, producing a higher power density than competing planar MOSFETs while lowering conduction losses. The strip-layout technique minimizes dynamic drain-source capacitance, reducing switching losses in hard-switched converters such as PFC stages and half-bridge converters.
Typical applications include switched-mode power supplies (SMPS) with PFC, high-voltage DC-DC converters, industrial motor drives, uninterruptible power supplies (UPS), welding equipment, and induction-heating inverter stages operating from rectified 230 V or 400 V mains.
When designing with this device, ensure adequate heat-sinking - the 417 W dissipation rating is only attainable with a substantial thermal interface. For high-frequency hard-switching topologies, gate-drive resistors in the 10-47 Ω range limit ringing, while a small RC snubber across the drain-source terminals mitigates voltage spikes caused by transformer leakage inductance.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not available in the manufacturer datasheet alone, giving design engineers a complete parametric view for sourcing decisions.
کے لیے ڈراپ اِن متبادل STW45NM60-H — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں STW45NM60-H (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Operating Temperature Range, Technology, Package, Configuration, dv/dt Capability.
STW45NM60
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →STW30NM60N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
STW38NM60N
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
STW42NM60N
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SPW47N60C3
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IXKH47N60C
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
STW45NM60-H زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | MDmesh (super-junction) |
| Drain-Source Voltage (VDS) | 600 V (650 V at TJMAX) |
| Continuous Drain Current (ID) | 45 A at Tc = 25 °C |
| Power Dissipation (PD) | 417 W at Tc = 25 °C |
| On-Resistance (RDS(on)) | 0.09 Ω typical at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | 4 V typical |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +150 °C (TJ) |
| پیکیج | TO-247-3 (through-hole) |
| ماؤنٹنگ ٹائپ | Through Hole |
| Avalanche Rating | 100% avalanche tested |
| dv/dt Capability | High |
| RoHS اسٹیٹس | Compliant |
STW45NM60-H پن کنفیگریشن
| پن 1 | Gate — Gate input - drive with 10-15 V relative to Source |
| پن 2 | Drain — Drain output - connected to TO-247 tab for thermal dissipation |
| پن 3 | Source — Source reference - connect to gate-drive return |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
STW45NM60-H کے لیے موزوں ہے 6 ایپلیکیشنs: PFC Boost Converter Front-End, Switched-Mode Power Supply (SMPS), Industrial Motor Drive (VFD), Uninterruptible Power Supply (UPS), Induction Heating Inverter, Solar Inverter DC-DC Stage.
PFC Boost Converter Front-End
The STW45NM60-H is a strong fit for continuous-conduction-mode (CCM) power-factor-correction (PFC) boost converters operating from rectified 230 V single-phase or 400 V three-phase mains. The 600 V V(BR)DSS gives ~200 V margin above the peak rectified 400 V line, the 0.09 Ω RDS(on) keeps full-load conduction loss low, and the MDmesh cell's low dynamic drain capacitance cuts switching loss at 65-100 kHz switching frequencies. In a typical 3 kW PFC stage, the part handles the boost switch position with adequate thermal margin on a properly sized heatsink; two STW45NM60-H MOSFETs in parallel further reduce conduction loss and share thermal load, with the standard gate-drive arrangement of 10-47 Ω gate resistors and a small RC snubber across D-S.
تجویز کردہ
Switched-Mode Power Supply (SMPS)
In hard-switched half-bridge and full-bridge SMPS topologies from 1 kW to 5 kW, the STW45NM60-H serves as the primary-side high-side or low-side switch with strong performance. The 600 V rating suits 390 VDC bus operation from rectified 230 V mains, and the 100% avalanche-tested ruggedness provides additional margin against transformer leakage-induced voltage spikes - a common failure mode in poorly clamped SMPS designs. Compared to planar 600 V MOSFETs of the same die size, the MDmesh architecture delivers noticeably lower switching loss, enabling either higher switching frequency (smaller magnetics) or higher efficiency at the same frequency. Typical gate-drive uses a 12-15 V UCC gate-driver with 10 Ω external gate resistance to control dv/dt and EMI.
تجویز کردہ
Industrial Motor Drive (VFD)
Variable-frequency drives (VFDs) for industrial three-phase induction motors up to 7.5 kW commonly use 600 V MOSFETs or IGBTs in the inverter stage. The STW45NM60-H is suitable for VFD inverters with switching frequencies of 8-20 kHz, where MDmesh conduction and switching losses balance well. In a typical 5 kW VFD, six STW45NM60-H MOSFETs (three high-side + three low-side) drive the motor phases from a 540 VDC bus produced by a three-phase PFC front-end. The TO-247-3 package simplifies heatsink mounting and isolation, and the part's avalanche ruggedness tolerates the back-EMF transients that occur when the motor's inductance commutates currents during PWM dead-time events.
تجویز کردہ
Uninterruptible Power Supply (UPS)
Double-conversion online UPS systems in the 3-10 kVA range use the STW45NM60-H in the battery-to-AC inverter stage, where the device switches a 384 VDC battery bus into a low-frequency step-up transformer for AC output. The 600 V breakdown gives comfortable margin above the 384 VDC bus, and the 45 A continuous current capability matches typical 5 kVA inverter ratings with adequate thermal margin. The avalanche ruggedness is particularly valuable during load-step transients, where the transformer leakage inductance can briefly overshoot the bus voltage. In redundant (N+1) UPS architectures, paralleled STW45NM60-H pairs also share current during overload conditions before transfer to bypass.
تجویز کردہ
Induction Heating Inverter
Resonant inverters for induction-heating cooktops and industrial induction heaters use 600 V MOSFETs in class-D or class-E topologies switching at 20-100 kHz into an LC resonant tank formed by the heating coil. The STW45NM60-H's MDmesh technology delivers low dynamic drain capacitance - a critical parameter for zero-voltage-switching (ZVS) resonant designs that minimize switching loss. The 45 A continuous rating supports 3-5 kW single-burner cooktop inverters, and the avalanche rating tolerates the reflected-load transients that occur when a ferrous pan is removed during heating. The TO-247-3 package mounts easily to the cooktop's aluminum heatsink or chassis plate, providing both electrical grounding path and thermal dissipation.
تجویز کردہ
Solar Inverter DC-DC Stage
In string inverters for residential and small-commercial photovoltaic systems, the STW45NM60-H fits the boost or buck DC-DC converter that lifts the variable PV string voltage (typically 200-600 VDC open-circuit) to a fixed 600-800 VDC bus feeding the grid-tie AC stage. The MDmesh low RDS(on) of 0.09 Ω optimizes full-load efficiency, directly impacting CEC-weighted inverter efficiency - a key regulatory metric. For transformerless single-string inverters up to 5 kW, a single STW45NM60-H per switching position provides adequate current capability; for three-string or commercial inverters above 10 kW, multiple paralleled devices are used. The avalanche rating provides additional margin against PV array-induced voltage transients from nearby lightning events.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا STW45NM60-H — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | STW45NM60 | STW30NM60N | STW38NM60N | SPW47N60C3 | IXKH47N60C |
|---|---|---|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | IXYS |
| Package | TO-247-3 | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same | TO-247-3 - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 650 V | 600 V |
| Continuous Drain Current | 45 A | 45 A | 30 A | 38 A | 47 A | 47 A |
| On-Resistance (RDS(on)) | 0.090 Ω | 0.090 Ω | 0.110 Ω | 0.095 Ω | 0.070 Ω | 0.085 Ω |
| Power Dissipation | 417 W | 417 W | ~250 W | ~370 W | ~415 W | ~400 W |
| Technology | MDmesh (super-junction) | MDmesh | MDmesh | MDmesh | CoolMOS C3 | CoolMOS-class |
| Avalanche Rated | Yes (100% tested) | Yes | Yes | Yes | Yes | Yes |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Industry-leading 0.09 Ω RDS(on) in MDmesh TO-247-3 family (بمقابلہSTW30NM60N)
- ST's proprietary MDmesh super-junction technology (بمقابلہSPW47N60C3 (Infineon CoolMOS C3))
- 100% avalanche-tested ruggedness (بمقابلہIXKH47N60C)
ڈیزائن نوٹس
Estimated: at full-load operation (45 A continuous, RDS(on) = 0.09 Ω), the STW45NM60-H dissipates roughly 182 W as conduction loss alone (P = I² × R = 45² × 0.09). Combined with switching loss, total dissipation typically reaches 200-250 W in a hard-switched PFC stage. Use RθJC of approximately 0.30 °C/W (TO-247 datasheet figure) and choose a heatsink with RθSA ≤ 0.20 °C/W to keep junction temperature below 125 °C at 50 °C ambient. Apply thermal interface material (TIM) with conductivity ≥ 3 W/m·K; torquing the TO-247 mounting hardware to 0.6-0.8 N·m ensures uniform TIM thickness.
Keep the gate-drive loop (gate-drive IC output → gate resistor → MOSFET gate → source lead → gate-drive IC return) physically small, ideally under 20 mm of total loop length, to minimize parasitic inductance that causes gate-oscillation and dv/dt-induced shoot-through. Place a 10 kΩ gate-source pull-down resistor on each MOSFET to hold the device off during controller start-up or fault conditions. For half-bridge layouts, place the high-side and low-side gate-drive returns directly at the respective Source pins, not at a shared ground plane that carries commutating currents.
Do not exceed the Safe Operating Area (SOA) at low VDS - the part can deliver high current only above roughly 5-10 V VDS. Sustained operation in the linear region (e.g., during soft-start or short-circuit) must be limited to the SOA envelope, which typically allows only a few amps below 5 V VDS. Adding a small RC snubber (R = 5-20 Ω, C = 0.5-2 nF, high-voltage film or ceramic) across drain-source suppresses voltage spikes from transformer leakage inductance and reduces dv/dt stress on the MOSFET and downstream rectifier.
The fast switching edges of an MDmesh MOSFET can produce EMI above EN 55022 Class B limits without filtering. A 10-47 Ω gate resistor slows the turn-on/turn-off dV/dt - larger values reduce EMI at the cost of higher switching loss. A small ferrite bead on the gate lead damps high-frequency gate-loop ringing. For input EMI filtering, add a common-mode choke and X/Y safety capacitors on the AC input side; for DC-side conducted emissions, a small LC π-filter between the rectifier and the PFC stage attenuates ripple conducted noise.
تعمیل کی معلومات
RoHS and REACH compliant per STMicroelectronics product compliance statement for STW45NM60 / STW45NM60-H. AEC-Q100 not applicable - this is a through-hole discrete power MOSFET designed for industrial/consumer applications. Conflict-mineral reporting (3TG) maintained by ST.
