SPW47N60C3 - 650V 47A CoolMOS C3 Power MOSFET | Infineon
MPN: SPW47N60C3 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $9.5 | $9.50 |
| 10 | $8.55 | $85.50 |
| 100 | $7.62 | $762.00 |
| 500 | $6.83 | $3,415.00 |
| 1,000 | $6.1 | $6,100.00 |
SPW47N60C3 Overview
A CoolMOS power transistor is a superjunction MOSFET architecture in which alternating p-type columns in the drift region compensate the electric field, breaking the silicon limit of conventional planar MOSFETs. Within the power semiconductor hierarchy, superjunction MOSFETs sit between standard planar MOSFETs and emerging SiC/GaN wide-bandgap devices, offering the best cost-per-ampere figure of merit for 500-650V applications.
Key features include a 650V drain-source breakdown (V(BR)DSS), 47A continuous drain current at Tc, a typical on-state resistance of approximately 70 mΩ, and a 415W maximum power dissipation rating. The C3 platform improves switching losses versus the C2 series and supports high-frequency operation. Built-in source-connected Kelvin source pin and low gate charge (Qg) reduce driver stress.
The SPW47N60C3 is engineered into PFC boost stages, LLC half-bridge converters, and three-phase inverter bridges for industrial drives. Typical use cases include server/telecom SMPS primary-side switches, solar micro-inverters, induction-heating resonant tanks, and welding inverter modules where 600V-class switching at >100kHz is required.
When designing with this part, observe the avalanche rating during turn-off transients and respect the TO-247-3 thermal envelope. Use a low-inductance gate-driver layout (Kelvin connection) and add a TVS or RC snubber for high-dV/dt conditions to keep ringing below the V(BR)DSS margin.
Drop-in alternatives for SPW47N60C3 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with SPW47N60C3 (same form factor and footprint) — differing in Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPW60R041C6FKSA1
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View Datasheet →SPW47N60S5
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SPA47N60C3
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STW48N60M2
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FDPF47N60
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SPW47N60C3 Maximum Ratings & Electrical Characteristics
| Part Number | SPW47N60C3 |
| Manufacturer | Infineon Technologies AG |
| Technology | CoolMOS C3 (superjunction) |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | 650 V |
| Continuous Drain Current (ID) at Tc | 47 A |
| Power Dissipation (PD) at Tc | 415 W |
| Output Capacitance Eoss @ 400V | Very low (per C3 series datasheet) |
| Package | TO-247-3-1 (PG-TO247-3-1) through-hole |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55C to +150C (junction, typical for CoolMOS C3) |
| Configuration | Single N-channel, 3 pins (G, D, S) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | N/A (through-hole) |
| Series | CoolMOS C3 (600V generation) |
SPW47N60C3 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; connect to gate-driver output via small gate resistor |
| Pin 2 | Drain (D) — Drain connection; internally bonded to the metal mounting tab |
| Pin 3 | Source (S) — Source connection; use as Kelvin reference for gate-drive return |
| Pin Tab | Drain (D) — Metal mount tab; internally connected to drain, isolate from heatsink if grounded |
Safe Operating Area (DC) at Tc=25C
Typical Applications
SPW47N60C3 is suitable for 6 applications: PFC Boost Stage (CCM), LLC Half-Bridge Primary Switch, Three-Phase Motor Drive Inverter, Solar Micro-Inverter Primary Switch, Welding Inverter Module, Induction Heating Resonant Tank.
PFC Boost Stage (CCM)
The SPW47N60C3 is widely used as the primary-side switch in 400V DC-bus continuous-conduction-mode PFC boost converters for server SMPS, telecom rectifiers, and industrial UPS modules rated 1-5 kW. Its CoolMOS C3 low Eoss at 400V directly reduces hard-switching loss in the boost diode reverse-recovery path, while the 650V V(BR)DSS provides sufficient margin for 230V AC rectified-bus transients. At 65-130 kHz switching, the 415W TO-247-3 package dissipation envelope handles the typical 100-200W per-switch loss budget. The low Qg and integrated source-connected Kelvin pad allow a simple totem-pole or gate-driver transformer interface. Compared with planar 600V MOSFETs of similar current, the SPW47N60C3 typically halves switching losses, enabling 96%+ peak efficiency at low cost per ampere.
Recommended
LLC Half-Bridge Primary Switch
The SPW47N60C3 fits the primary-side half-bridge position in LLC resonant converters for LCD-TV backlights, e-bike chargers, and 1-3 kW server auxiliary supplies. CoolMOS C3 superjunction technology allows ZVS (zero-voltage switching) at the resonant tank frequency of 100-200 kHz, minimizing turn-on loss. The 650V rating withstands the resonant capacitor peak swings at high line (390V DC bus plus ringing), while the 70 mOhm RDS(on) keeps conduction loss acceptable at full load. Compared to IGBTs in this voltage class, the SPW47N60C3 eliminates tail-current loss, enabling higher switching frequency and smaller magnetics. Its avalanche-rated body diode also tolerates start-up transient conditions in the LLC tank.
Recommended
Three-Phase Motor Drive Inverter
The SPW47N60C3 is suited for low-voltage three-phase inverter legs driving 400V-class industrial motors, servo drives, and HVAC compressor inverters up to 5-7 kW. Three TO-247-3 SPW47N60C3 form a half-bridge per phase, switching at 8-20 kHz for sinusoidal PWM modulation. The 650V rating gives ample margin above the 400V DC-link, while the 47A continuous drain current handles peak motor phase currents without saturation. Superjunction technology reduces switching loss versus IGBTs in this frequency range, allowing smaller heatsinks and higher inverter power density. The low Qg and integrated source-connected Kelvin pad enable simple bootstrap gate-driver circuits (e.g. IR2110/IRS2003) for the high-side switch.
Recommended
Solar Micro-Inverter Primary Switch
The SPW47N60C3 is deployed in grid-tied solar micro-inverters (250-500W per panel) as the primary-side high-voltage switch in the flyback or full-bridge stage. The 650V V(BR)DSS provides sufficient margin for the rectified 200-400V PV input under transient open-circuit conditions, while the low Eoss at 400V reduces capacitive turn-on loss in zero-voltage-switching topologies. The 47A peak current capability handles the inrush of the PV-side bulk capacitor at start-up. For higher power (>500W) micro-inverters, two SPW47N60C3 in parallel share current and reduce junction temperature rise, extending the design margin in outdoor solar installations with ambient temperatures up to 70C.
Recommended
Welding Inverter Module
The SPW47N60C3 is used in professional welding inverter modules for the primary-side full-bridge or push-pull topology that converts rectified 230/400V AC into a high-frequency AC for the welding transformer. CoolMOS C3 technology handles the high peak currents (50-100A pulsed) of the welding arc-load while sustaining a 50-100 kHz switching frequency, dramatically shrinking the magnetic core versus legacy 50 Hz transformer designs. The 650V breakdown withstands reflected voltage spikes from the welding transformer leakage inductance. The TO-247-3 package, mounted on a substantial heatsink, sustains the 415W dissipation envelope during arc strike transients. Compared with planar MOSFETs, the SPW47N60C3 enables 5-10 kW welding inverters in a compact handheld chassis.
Recommended
Induction Heating Resonant Tank
The SPW47N60C3 is deployed in half-bridge resonant tanks for induction-heating cooktops and industrial induction heaters operating at 20-50 kHz. As a zero-voltage-switched device with low Eoss at 400V, it efficiently handles the high circulating currents in the resonant LC tank while dissipating minimal switching loss. The 47A continuous rating supports cooktop power levels up to 3 kW per cooking zone with adequate heatsinking. CoolMOS C3's robust body diode also tolerates the dead-time conduction period inherent in Class-D resonant topologies, eliminating the need for an external anti-parallel diode. The TO-247-3 package simplifies mounting to a flat aluminum heatsink beneath the cooktop glass-ceramic surface.
Recommended
Recommended Products Summary
Engineering reference data for SPW47N60C3 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPW60R041C6 | SPW47N60S5 | SPA47N60C3 | STW48N60M2 | FDPF47N60 |
|---|---|---|---|---|---|---|
| Package | TO-247-3-1 | TO-247-3-1 (same) | TO-247-3-1 (same) | TO-247-3-1 (same) | TO-247-3 (same) | TO-247-3 (same) |
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| Technology | CoolMOS C3 (superjunction) | CoolMOS C6 | CoolMOS S5 | CoolMOS C3 (automotive) | MDmesh M2 | UniFET II |
| V(BR)DSS (V) | 650 | 650 | 650 | 650 | 600 | 600 |
| Continuous Drain Current (A) | 47 | 47 | 47 | 47 | 48 | 47 |
| Power Dissipation (W) | 415 | 415 | 415 | 415 | 400 | 385 |
| RDS(on) (mOhm, typ) | 70 | 41 | 45 | 70 | 60 | 85 |
| Automotive Grade (AEC-Q101) | No | No | No | Yes | No | No |
Key Differentiators
- CoolMOS C3 superjunction technology with low Eoss at 400V (vs SPW47N60C2)
- Higher continuous drain current at 47A versus planar MOSFETs (vs FDPF47N60 (onsemi UniFET II))
- Automotive-grade SPA47N60C3 variant available (vs SPA47N60C3 vs SPW47N60C3)
Design Notes
Estimated: At Tc=100C and 47A continuous drain current with 70 mOhm RDS(on), conduction loss is approximately 155W. Using the TO-247-3-1 RthJC of 0.30 C/W, junction temperature rise above case is 47C, placing Tj at 147C - within the 150C rating but with minimal margin. Heatsink selection must keep Tc below 100C in your application; for sustained 47A operation, consider the IPW60R041C6 (lower RDS(on)) or parallel two SPW47N60C3 devices to halve conduction loss.
Use a Kelvin-source connection for high-frequency switching: separate the gate-driver return trace from the power-source return by using the source bonding wire as the gate-loop reference. This avoids source-inductance-induced Vgs ringing that would otherwise cause Rds(on) increase and possible shoot-through. Place a 10-ohm gate resistor close to pin 1 to damp the gate-loop LC resonance, and minimize the drain-to-heatsink capacitance to reduce common-mode EMI.
Do not exceed 650V V(BR)DSS even transiently. In PFC boost stages, the rectified mains plus inductive spike can exceed 600V at light load; add a TVS clamp or RC snubber (1-ohm + 100pF) across the drain-source to limit overshoot. For LLC half-bridge, the start-up transient with no load can ring to 1.5x DC bus; ensure the resonant capacitor voltage rating plus margin fits within V(BR)DSS. Never operate the body diode at >5A continuous - it is rated for brief dead-time conduction only.
Mount the TO-247-3-1 to a flat heatsink with thermal compound; torque the mounting screw to 0.6-0.9 Nm to avoid cracking the plastic body. Use an insulated thermal pad if the heatsink is grounded (since the tab is internally bonded to drain). Keep the source lead short (direct return to gate driver ground plane) to minimize switching-loop inductance. For high-current applications, use a wide copper pour (>=1 oz, >=10mm wide) on drain and source PCB traces to minimize parasitic resistance.
Compliance Information
RoHS compliant and lead-free per Infineon product page. AEC-Q101 automotive qualification is available on the SPA-prefix variant (SPA47N60C3), not on the SPW47N60C3 itself. Halogen-free status not explicitly stated in the verified data.
