MW7IC2040NR1 vs MW7IC18100NR1 So sánh
So sánh chi tiết song song của MW7IC2040NR1 bằng NXP Semiconductors và MW7IC18100NR1 bằng NXP Semiconductors. So sánh các thông số quan trọng, thông số điện tử, gói gọn, trạng thái vòng đời, giá cả và khả năng cung cấp để xác định linh kiện tốt nhất cho yêu cầu thiết kế của bạn.
NXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ Hoạt độngNXP Semiconductors
MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP
MW7IC18100NR1 ✓ Hoạt độngSo sánh thông số kỹ thuật
| Tham số | MW7IC2040NR1 | MW7IC18100NR1 |
|---|---|---|
| Thương hiệu | NXP Semiconductors | NXP Semiconductors |
| Danh mục | RF Amplifiers | RF Amplifiers |
| Trạng thái vòng đời | Hoạt động | Hoạt động |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | — |
| RF Type | General Purpose / Wideband Integrated Power Amplifier | — |
| Chức năng | Two-stage integrated power amplifier with on-chip matching | — |
| Frequency Range (Application) | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) | — |
| Frequency Range (Characterization) | 100 MHz to 1 GHz | — |
| Supply Voltage (Vdd) | 24 V to 32 V (nominal 28 V) | — |
| Maximum Supply Voltage | 32 V | — |
| Quiescent Supply Current (Idq) | 75 mA | — |
| Small-Signal Gain | 23.5 dB | — |
| Output Power (avg, W-CDMA) | 4 W (typical at rated operating conditions) | — |
| Modulation Compatibility | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats | — |
| Hộp / Vỏ | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount | TO-270 WB-14 (Case 1618-02), plastic, flat leads |
| Số chân | 16 | — |
| Operating Mode | Class-AB (multi-stage, externally biased) | — |
| Lead Configuration | Flat leads (surface-mount) | — |
| Kiểu lắp đặt | Surface Mount (PCB solderable with bottom drain ground plane) | Surface Mount (gull-wing flat leads) |
| Nhiệt độ hoạt động | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) | -40C to +85C (case) |
| Packaging Type | Tape & Reel (per part suffix NR1 suffix convention) | — |
| Trạng thái RoHS | Compliant (per NXP product family) | Compliant |
| Product Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | — | 1.805 GHz to 2.05 GHz |
| Output Power (CW, typical) | — | 100 W (50 dBm) |
| Power Gain (typical) | — | 30 dB |
| P1dB (typical) | — | 25 W (44 dBm) CW |
| Supply Voltage (VDD) | — | 24 V to 32 V (28 V typical) |
| Supply Current (typical) | — | 1.18 A |
| RF Modulation Support | — | GSM, GSM EDGE, CDMA, W-CDMA |
| VSWR Ruggedness | — | 5:1 stable into mismatch |
| Spurious (100 mW to 5 W CW) | — | Below -60 dBc |
| Lead Finish | — | e3 (matte tin) |
| Body Material | — | Plastic / Epoxy |