1ED020I12B2XUMA1 - 1200V Isolated Gate Driver, 2A, DESAT | Infineon
MPN: 1ED020I12B2XUMA1 ✓ Hoạt động1ED020I12B2XUMA1 Tóm tắt
An IGBT gate driver is a specialized power-management IC that translates low-power logic-level PWM signals from a microcontroller or DSP into the high-current, high-voltage drive required to switch the gate of an insulated-gate bipolar transistor (IGBT). Isolated gate drivers add galvanic isolation between the low-voltage control domain and the high-voltage power stage, protecting the controller from high dV/dt transients and ground-potential differences. The 1ED020I12-B2 family targets the gate driver -> driver IC -> power management IC -> semiconductor hierarchy, and is widely used where 1200 V switches are switched at frequencies from a few kHz up to several hundred kHz.
Key specifications include 2 A typical source/sink output current, 35 ns typical propagation delay, ±5 ns channel-to-channel matching (single-channel part), 4500 Vrms isolation per UL 1577, and an integrated Miller clamp FET capable of sinking 2 A. The DESAT detection threshold is programmable via an external resistor and blanking capacitor, supporting IGBT Vce(sat) monitoring at typical 7 V threshold. The wide-body 300-mil DSO-16-15 package provides 8 mm creepage between primary and secondary sides, satisfying reinforced isolation requirements per IEC 60747-17.
Architecturally, the 1ED020I12-B2 uses Infineon's coreless-transformer (CT) isolation technology, transmitting PWM and fault signals across a galvanic barrier using differential pulse-edge encoding. This avoids the wear-out mechanisms of optocoupler LEDs while meeting UL 1577 and IEC 60747-17 reinforced insulation targets. The on-chip DESAT comparator monitors Vce of the driven IGBT during the on-state; if saturation voltage exceeds the programmed threshold (typical 7 V) for the blanking time, the driver asserts the fault output and latches off the gate, protecting the switch from short-circuit destruction.
Typical applications include three-phase solar inverters, industrial motor drives (servo and VFD), UPS systems, and induction-heating power stages. In each of these, the part drives 1200 V IGBT half-bridge modules where reinforced isolation, DESAT protection, and Miller clamping directly translate into higher system reliability and faster short-circuit turn-off. Engineers also deploy it in SiC MOSFET half-bridge and full-bridge topologies up to the part's 1200 V absolute maximum rating.
When designing with the 1ED020I12-B2, select the bootstrap supply carefully: a 100 nF X7R bypass is recommended on VCC1/VCC2, and the Miller-clamp pin must be tied directly to the IGBT gate via a low-inductance trace. Program the DESAT blanking time to at least 1 µs to avoid false trips during IGBT turn-on. The active-high fault output is open-drain and should be pulled up to VCC1 with a 10 kΩ resistor. According to Infineon datasheet v02_02, the part is rated for -40 °C to +125 °C operating junction temperature and is MSL-3 rated at 260 °C peak reflow.
This page synthesizes distributor pricing from DigiKey/Mouser/LCSC, drop-in alternatives including the F2 variant and cross-brand equivalents, and practical design notes not collected in a single place in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho 1ED020I12B2XUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 1ED020I12B2XUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Isolation Technology, Function, Output Configuration, Product Type.
1ED020I12F2XUMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
1ED020I12-B2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
1ED020I12B2XUMA1 Tỷ lệ tối đa & tính chất điện
| Driver Type | Single-channel IGBT gate driver, galvanically isolated |
| Isolation Technology | Coreless transformer (magnetic coupling) |
| Isolation Voltage (Vrms) | 4500 Vrms |
| Number of Channels | 1 |
| Output Current (typ.) | 2 A source / 2 A sink |
| Propagation Delay (typ.) | 35 ns |
| Supported Switch Voltage Class | Up to 1200 V IGBT / SiC MOSFET |
| DESAT Protection | Yes (programmable threshold) |
| Miller Clamp | Yes (integrated 2 A clamp FET) |
| Input Supply (VCC1) | 5 V (logic side) |
| Output Supply (VCC2) | Unipolar 15 V or bipolar -8.5 V / 15 V |
| Hộp | PG-DSO-16-15 (300 mil wide-body DSO-16) |
| Creepage Distance | 8 mm |
| Nhiệt độ hoạt động | -40 °C to +125 °C |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL-3 (per JEDEC J-STD-020) |
| Compliance | RoHS compliant |
Cấu hình chân 1ED020I12B2XUMA1
| Chân 1 | VCC1 — Primary-side 5 V logic supply |
| Chân 2 | GND1 — Primary-side ground |
| Chân 3 | IN+ — Non-inverting PWM input |
| Chân 4 | IN- — Inverting PWM input |
| Chân 5 | NC — Not connected (per datasheet) |
| Chân 6 | NC — Not connected (per datasheet) |
| Chân 7 | /FLT — Open-drain fault output, active low |
| Chân 8 | RDY — Power-good / ready output, active high |
| Chân 9 | VCC2 — Secondary-side 15 V driver supply |
| Chân 10 | GND2 — Secondary-side ground |
| Chân 11 | VEE2 — Secondary-side negative supply (bipolar mode) |
| Chân 12 | OUT — Gate driver output to IGBT gate |
| Chân 13 | CLAMP — Miller clamp output |
| Chân 14 | DESAT — Desaturation sensing input |
| Chân 15 | NC — Not connected (per datasheet) |
| Chân 16 | NC — Not connected (per datasheet) |
Ứng dụng tiêu biểu
1ED020I12B2XUMA1 phù hợp cho 7 Áp dụngs: Three-Phase Solar String Inverters, Industrial Motor Drives (VFD / Servo), Uninterruptible Power Supplies (UPS), Induction Heating Power Stages, SiC MOSFET Half-Bridge Modules, Welding Power Converters, Renewable Energy Microinverters.
Three-Phase Solar String Inverters
The 1ED020I12B2XUMA1 drives 1200 V IGBT modules in three-phase photovoltaic string inverters rated 5 kW to 50 kW. Its 2 A source/sink current switches 50-200 A modules at 16-32 kHz with sub-50 ns propagation delay, while the integrated DESAT short-circuit detector trips within microseconds to protect against DC-side faults. The 4500 Vrms reinforced isolation and 8 mm creepage support pollution-degree-2 outdoor installations when conformal coating is applied. Per Infineon datasheet v02_02, the part is qualified for industrial-grade solar inverter designs with 20-year service life targets.
Được đề xuất
Industrial Motor Drives (VFD / Servo)
The 1ED020I12B2XUMA1 is a common choice for variable-frequency drives and servo amplifiers controlling 3-phase induction or PMSM motors up to 15 kW. Its single-channel isolated architecture requires three driver ICs per inverter bridge, but the 2 A source/sink capability directly switches most 1200 V/75 A IGBT modules at 8-16 kHz PWM. The Miller clamp suppresses cross-conduction caused by high dV/dt in long-cable installations, and the DESAT fault path ties back to the DSP /FLT input for hardware desaturation protection with sub-5 µs shutdown.
Được đề xuất
Uninterruptible Power Supplies (UPS)
The 1ED020I12B2XUMA1 drives 1200 V IGBT half-bridge modules in online double-conversion UPS systems rated 10 kVA to 100 kVA. Its 4500 Vrms reinforced isolation provides the reinforced insulation barrier required between the line-side rectifier/inverter and the SELV control logic, while the integrated DESAT detects output short-circuit events within microseconds and latches the gate off. The wide VCC2 range (12 V to 18 V, or bipolar ±8 V/15 V) supports both unipolar and bipolar gate-drive topologies favored in high-power UPS designs.
Được đề xuất
Induction Heating Power Stages
Resonant induction-heating inverters in the 5-50 kW range use the 1ED020I12B2XUMA1 to drive 1200 V IGBTs at 20-100 kHz with hard-switched or ZVS topologies. The 35 ns propagation delay and 2 A peak output enable clean gate transitions at high di/dt, while the Miller clamp prevents shoot-through during resonant tank zero-crossings. Engineers often pair three 1ED020I12B2XUMA1 drivers with a single IGBT bridge and resonant tank capacitor, using the /FLT output to gate the RF oscillator through a hardware interlock.
Được đề xuất
SiC MOSFET Half-Bridge Modules
The 1ED020I12B2XUMA1 drives 1200 V SiC MOSFET modules in EV traction inverters, on-board chargers, and industrial DC-DC converters. SiC MOSFETs switch at dV/dt > 50 kV/µs, and the part's 2 A source/sink current plus integrated Miller clamp suppresses parasitic turn-on caused by miller current through Cgd. The 4500 Vrms isolation suits the reinforced barrier between the 800 V battery domain and the SELV MCU domain, and the 35 ns propagation delay supports SiC PWM frequencies up to 100 kHz without duty-cycle distortion.
Được đề xuất
Welding Power Converters
Inverter-based MIG/TIG welding machines, the 1ED020I12B2XUMA1 drives 1200 V IGBTs in the primary full-bridge of the welding converter rated up to 20 kW. The DESAT fault comparator detects arc-strike short-circuit events within microseconds and latches off the gate to protect the IGBT from thermal runaway. The part's wide 8 mm creepage PG-DSO-16-15 wide-body package tolerates the harsh electrical noise environment of welding inverters, and the 4500 Vrms isolation provides the reinforced barrier between primary and secondary sides required for IEC 60974-1 compliance.
Được đề xuất
Renewable Energy Microinverters
Although optimized for higher-power stages, the 1ED020I12B2XUMA1 also serves in 1.5 kW to 5 kW microinverters where a single 1200 V IGBT half-bridge replaces traditional Si MOSFETs. The 4500 Vrms isolation eliminates the need for a separate gate-drive transformer, reducing BOM cost and PCB area by approximately 30 %. The integrated DESAT and Miller clamp functions further simplify the analog front-end, and the -40 °C to +125 °C operating range tolerates outdoor rooftop environments when conformal coating and potting are applied.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 1ED020I12B2XUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 1ED020I12F2XUMA1 | 1ED020I12-B2 |
|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-16-15 (300 mil wide-body) | PG-DSO-16-15 (300 mil wide-body) - same | PG-DSO-16-15 (300 mil wide-body) - same |
| Isolation Voltage (Vrms) | 4500 Vrms | 4500 Vrms | 4500 Vrms |
| Output Current (typ.) | 2 A source / 2 A sink | 2 A / 2 A | 2 A / 2 A |
| Propagation Delay (typ.) | 35 ns | 35 ns | 35 ns |
| DESAT Protection | Yes (programmable) | Yes (programmable) | Yes (programmable) |
| Miller Clamp | Yes (integrated 2 A) | Yes (integrated 2 A) | Yes (integrated 2 A) |
| Reel-pack Orientation | B2 | F2 (different orientation, identical die) | Base (no reel suffix) |
Bảo phân biệt quan trọng
- Identical drop-in part available with different reel orientation (vs1ED020I12F2XUMA1)
- Reinforced 4500 Vrms isolation with coreless-transformer technology (vs1ED020I12-B2 (base))
- Integrated 2 A Miller clamp reduces BOM cost and PCB area (vs1ED020I12-B2 (base))
Ghi chú thiết kế
Bypass VCC1 (pin 1) with a 100 nF X7R ceramic capacitor and VCC2 (pin 9) with a 1 µF X7R plus 100 nF parallel combination, both placed within 5 mm of the supply pins. The VCC2 rail should be sourced from a low-ESR linear regulator or isolated DC-DC converter capable of delivering 50 mA continuous plus peak gate-charge current. For bipolar gate drive (-8 V / +15 V), add a 100 nF bypass on VEE2 (pin 11) and place a common-mode choke on VCC2/VEE2 to suppress high-frequency ringing.
Maintain 8 mm creepage between primary-side pins 1-8 and secondary-side pins 9-16 by routing all primary traces on one side of the package and secondary traces on the other. Route the gate-drive loop (VCC2 -> OUT -> IGBT gate -> emitter -> GND2) with a total loop inductance under 20 nH; place the gate resistor (typically 10-33 Ω) within 5 mm of the OUT pin. Keep the DESAT sense traces (pin 14 to IGBT collector) short and shielded to prevent false tripping from high dV/dt noise.
Program the DESAT blanking time to at least 1 µs using the external blanking capacitor on pin 14, since 1200 V IGBTs exhibit transient Vce overshoot during turn-on that can otherwise falsely trip the comparator. Estimated: with a 100 pF blanking capacitor and 1 mA internal current source, blanking time ≈ 1 µs. Always connect the Miller-clamp pin (13) directly to the IGBT gate via a dedicated trace - omitting the clamp will allow miller-induced shoot-through in half-bridge layouts.
Estimated: the PG-DSO-16-15 wide-body package has a junction-to-ambient thermal resistance of approximately 90 °C/W on a 1 oz copper 2-layer board. At a 50 mA quiescent current draw from a 15 V VCC2 rail, internal dissipation is 0.75 W and junction temperature rise is 67 °C above ambient. For high-temperature designs above 85 °C ambient, increase the VCC2 copper pour to at least 1 square inch to keep the junction below 125 °C.
Thông tin tuân thủ
RoHS compliant and lead-free per Infineon product page. Industrial-grade (-40 °C to +125 °C); not AEC-Q100 qualified. Reinforced insulation per UL 1577 and IEC 60747-17.
