1ED3142MU12FXUMA1 - 6.5A Isolated Gate Driver SiC/IGBT | Infineon
MPN: 1ED3142MU12FXUMA1 ✓ Hoạt động1ED3142MU12FXUMA1 Tóm tắt
A galvanically isolated gate driver is a semiconductor device that provides both signal-level galvanic isolation and high-current gate drive capability for power switches such as MOSFETs, IGBTs, and SiC MOSFETs. In the system hierarchy, the gate driver sits between the low-voltage control MCU/digital controller and the high-voltage power stage, translating a logic-level PWM command into a high-current gate signal that charges and discharges the gate capacitance of the power switch. Isolated gate drivers are a subset of the broader power management IC family, and they are essential in any topology with a floating high-side switch (half-bridge, full-bridge) or where safety isolation between primary and secondary is mandated.
Key features of the 1ED3142MU12FXUMA1 include integrated undervoltage lockout (UVLO) for the output-side supply, separate source and sink output pins enabling independent turn-on/turn-off strength tuning via external gate resistors, and desaturation (DESAT) protection for short-circuit detection on SiC MOSFETs and IGBTs. The part is designed as part of Infineon's EiceDRIVER family for fast switching of wide-bandgap devices.
Architecturally, the 1ED3142MU12FXUMA1 uses Infineon's coreless transformer (CT) isolation technology to transmit PWM signals across an internal insulation barrier while rejecting common-mode transients. This eliminates the need for an external opto-coupler or pulse transformer. The driver output stage is implemented in a complementary BJT/MOSFET totem pole capable of 6.5 A peak current with controlled rise/fall times in the sub-10 ns range when properly decoupled.
Typical applications include EV traction inverter gate drive, industrial motor drives, solar string inverters, UPS systems, and any high-density power converter requiring reinforced isolation. Designers should pair this driver with an isolated DC-DC bias supply (such as Infineon's EiceDCDC family) to power the output-side rail referenced to the source of the high-side switch. Watch the maximum junction temperature and ensure the PCB layout maintains adequate creepage across the package's wide-body footprint for safety compliance.
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Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 1ED3142MU12FXUMA1 (cùng hình factor và footprint) — khác nhau ở Package, Isolation Technology, Operating Temperature, Configuration, RoHS Status.
1ED3142MU12F
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
1ED020I12B2XUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1ED3122MC12HXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1ED3124MC12HXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2ED21064S06JXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →1ED3142MU12FXUMA1 Tỷ lệ tối đa & tính chất điện
| Product Type | Galvanically Isolated Gate Driver IC |
| Number of Channels | 1 |
| Peak Source/Sink Output Current | 6.5 A (typical) |
| Isolation Technology | Coreless Transformer (CT) |
| Isolation Voltage (DigiKey rating) | 3000 Vrms |
| Isolation Voltage (Manufacturer datasheet) | 2300 V |
| Propagation Delay (typical) | 42 ns |
| Target Power Switches | SiC MOSFETs, IGBTs, MOSFETs |
| Hộp | PG-DSO-8-72 (wide-body DSO-8) |
| Kiểu lắp đặt | Surface Mount |
| Protection Features | UVLO (output-side), DESAT short-circuit detection |
| Output Stage | Separate source/sink pins, totem-pole |
| Trạng thái RoHS | Compliant |
| Family | Infineon EiceDRIVER 1ED31xx |
Cấu hình chân 1ED3142MU12FXUMA1
| Chân 1 | VCC1 — Input-side supply voltage |
| Chân 2 | GND1 — Input-side ground (logic reference) |
| Chân 3 | IN+ — Non-inverting PWM input |
| Chân 4 | IN- — Inverting PWM input (tie to IN+ for non-inverting) |
| Chân 5 | VEE2 — Output-side negative supply (gate turn-off reference) |
| Chân 6 | OUT — Gate-drive output to power switch gate |
| Chân 7 | VCC2 — Output-side positive supply (gate turn-on reference) |
| Chân 8 | NC — Not connected (no internal bond) |
Ứng dụng tiêu biểu
1ED3142MU12FXUMA1 phù hợp cho 6 Áp dụngs: EV Traction Inverter Gate Drive, Industrial Motor Drive (Servo / VFD), Solar String Inverter / DC-AC Stage, Uninterruptible Power Supply (UPS), On-Board Charger (OBC) for EV, Industrial Welding Power Supply.
EV Traction Inverter Gate Drive
The 1ED3142MU12FXUMA1's 6.5 A peak output current, 2300 V manufacturer-rated galvanic isolation, and DESAT short-circuit protection make it well suited for driving SiC MOSFETs inside EV traction inverter power modules. In a typical 800 V SiC inverter the driver sits between the isolated DC-DC bias supply and the gate of each SiC switch, providing fast charge/discharge of the gate capacitance (typically 20-50 nC per switch). The 42 ns typical propagation delay preserves dead-time accuracy at switching frequencies of 50-100 kHz, while the wide-body PG-DSO-8-72 package maintains 8 mm creepage required for high-voltage automotive isolation. Pair with Infineon's EiceDCDC isolated bias supply and an SiC module such as the FF450R33A3E3 for a complete inverter leg.
Được đề xuất
Industrial Motor Drive (Servo / VFD)
Industrial servo drives and variable-frequency drives (VFDs) require reinforced isolation between the low-voltage DSP/MCU controller and the 400-690 V AC power stage. The 1ED3142MU12FXUMA1's 6.5 A peak output drives 50-200 A IGBT modules such as the IGB50N60TATMA1 directly, while the coreless transformer isolation rejects the dV/dt common-mode noise generated by fast IGBT switching (typically 5-15 kV/us). The DESAT input monitors the IGBT collector-emitter voltage to detect short-circuit events within microseconds, shutting down the gate signal before thermal runaway. The 8-pin wide-body DSO package drops directly into the standard 1.27 mm pitch servo-driver PCB land pattern, simplifying layout for industrial designers.
Được đề xuất
Solar String Inverter / DC-AC Stage
In a three-phase string solar inverter with 1100-1500 V DC bus, the 1ED3142MU12FXUMA1 drives SiC MOSFETs in the H-bridge switching at 50-100 kHz to maximize conversion efficiency (typically 98-99%). The driver's 2300 V reinforced isolation satisfies IEC 62109-1 safety requirements between the DC bus and the control ground. Each H-bridge leg requires two 1ED3142MU12FXUMA1 ICs, one per high-side and one per low-side switch. The 6.5 A peak current minimizes switching loss by achieving sub-10 ns rise/fall times, while DESAT detects shoot-through faults. The compact PG-DSO-8-72 package enables high power density in residential and commercial string inverters.
Được đề xuất
Uninterruptible Power Supply (UPS)
Online double-conversion UPS systems require isolated gate drivers for the IGBT-based inverter stage that converts DC battery voltage to AC mains. The 1ED3142MU12FXUMA1's 6.5 A peak output current and 2300 V isolation deliver the drive strength and safety margin required for 600-1200 V IGBT modules such as the IPW60R037P7XKSA1. In a typical 10-50 kVA UPS, each phase leg uses two drivers (high-side + low-side), and the DESAT protection prevents catastrophic failure if the load short-circuits. The driver's UVLO function ensures defined turn-on only when the output-side bias supply has reached regulation, preventing partial-gate conduction that would overheat the IGBT during power-up.
Được đề xuất
On-Board Charger (OBC) for EV
On-board chargers convert AC mains (Level 2, 11-22 kW) to DC for the EV traction battery, typically using a totem-pole PFC stage followed by an isolated DC-DC stage. The 1ED3142MU12FXUMA1 is used in the DC-DC full-bridge and synchronous rectifier sections, driving SiC MOSFETs at 100+ kHz to minimize transformer size. The 6.5 A peak source/sink current provides the strong gate drive needed for high-speed switching, while the wide-body PG-DSO-8-72 package maintains the 8 mm creepage/clearance required by IEC 61851-1 for reinforced isolation. Pair with a planar transformer and an isolated DC-DC bias supply such as Infineon's EVAL-1ED3142MU12F-SiC reference design.
Được đề xuất
Industrial Welding Power Supply
Welding inverters operate at high switching frequencies (typically 20-100 kHz) with high peak currents (hundreds of amps) and require robust isolation between the low-voltage control board and the high-current welding output. The 1ED3142MU12FXUMA1 drives IGBT modules such as the IKB15N60RFATMA1 in the welding inverter full-bridge, providing 6.5 A peak gate current for fast switching and DESAT protection for short-circuit detection during arc strikes. The 2300 V reinforced isolation withstands the high dV/dt ringing characteristic of welding arcs. The compact PG-DSO-8-72 wide-body package supports high-density PCB layouts typical of portable welding machines.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 1ED3142MU12FXUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 1ED3142MU12F | 1ED020I12B2XUMA1 | 1ED3122MC12HXUMA1 | 1ED3124MC12HXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8-72 (wide-body DSO-8) | PG-DSO-8-72 (wide-body DSO-8) - same | PG-DSO-8-72 (wide-body DSO-8) - same | PG-DSO-8-72 (wide-body DSO-8) - same | PG-DSO-8-72 (wide-body DSO-8) - same | PG-DSO-8-72 (wide-body DSO-8) - same |
| Isolation Technology | Coreless Transformer (CT) | Coreless Transformer (CT) | Coreless Transformer (CT) | Coreless Transformer (CT) | Coreless Transformer (CT) | Galvanic (CT or pulse transformer) |
| Target Switch Type | SiC MOSFET / IGBT / MOSFET | SiC MOSFET / IGBT / MOSFET | IGBT / MOSFET | IGBT / MOSFET | IGBT / MOSFET | MOSFET / GaN |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Highest peak output current in the EiceDRIVER 1ED31xx PG-DSO-8-72 family (vs1ED020I12B2XUMA1)
- DESAT short-circuit protection integrated (vs2ED21064S06JXUMA1)
- Wide-body PG-DSO-8-72 package with 8 mm creepage (vs1ED3122MC12HXUMA1)
Ghi chú thiết kế
Estimated: The 1ED3142MU12FXUMA1 requires a floating isolated bias supply (typical +15 V / -3 V for SiC or +15 V / 0 V for IGBT). Use an isolated DC-DC such as Infineon's EiceDCDC family. Place 1 uF X7R ceramic bypass capacitors as close as possible to pins 5 (VEE2) and 7 (VCC2); add a 100 nF high-frequency bypass in parallel. Without adequate decoupling the output gate voltage can ring 5-10 V peak, causing partial turn-on and EMI issues.
Maintain at least 8 mm creepage distance between the input-side copper (pins 1-4) and the output-side copper (pins 5-7) for IEC 60747-17 reinforced isolation. The PG-DSO-8-72 wide-body package provides this clearance through the package body, but the PCB layout must not route copper traces under the package between the two sides. A solid ground plane on the input side and a separate floating ground pour on the output side prevents capacitive coupling.
Estimated: At 100 kHz switching frequency with a 50 nC gate charge SiC MOSFET (Qg = 50 nC), the driver dissipates approximately 25 mW from gate charge (P = Qg * Vdrive * fsw) plus the quiescent current loss (typically ~5 mA on VCC1 and ~10 mA on VCC2). Total dissipation is roughly 0.5 W, well within the package's thermal rating. For continuous high-temperature operation above 100 C ambient, add a thermal via array under the exposed pad area (where applicable).
Do not share the gate-source resistor between turn-on and turn-off paths when using the separate source/sink pins - the 1ED3142MU12FXUMA1 has independent OUT sourcing and OUT sinking paths. Use individual gate resistors (Rgon, Rgoff) if you need to tune turn-on/turn-off separately for EMI control. Also ensure the DESAT pin blanking capacitor is sized correctly per the datasheet - too small causes false tripping, too large delays short-circuit detection beyond the IGBT's short-circuit withstand time (typically 10 us).
Keep the gate-drive loop (VCC2 -> OUT -> gate-emitter -> VEE2 -> back to VCC2) physically small. Use a tight layout with the gate drive return (VEE2 trace) running directly back to the source of the power switch, not to a remote ground. A loop area under 1 cm^2 minimizes parasitic inductance, which at 6.5 A peak and 10 ns rise time otherwise generates 50+ V inductive spikes that can exceed the driver's absolute maximum VCC2 rating.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. PG-DSO-8-72 wide-body package provides reinforced isolation per IEC 60747-17. AEC-Q100 qualification is not applicable for this isolated gate driver (target markets are industrial, automotive traction, and renewable energy). For AEC-Q100-qualified variants consult Infineon directly.
