BSC520N15NS3G - 150V N-Ch 21A OptiMOS 3 MOSFET | Infineon
MPN: BSC520N15NS3G ✓ Hoạt độngBSC520N15NS3G Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and modulate electrical energy in power-conversion circuits. Within the broader taxonomy it belongs to: MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor. The OptiMOS 3 generation specifically targets low-voltage (<=150 V) synchronous-rectifier, motor-drive, and hot-swap applications, where low gate charge and low RDS(on) directly improve converter efficiency and thermal headroom.
Key specifications include 150 V drain-source breakdown voltage (VDS), 21 A continuous drain current (ID) at TC=25°C, 57 W power dissipation (Ptot) at TC=25°C, and 52 mΩ maximum RDS(on) at VGS=10 V. The MOSFET is rated for operation from -55°C to +150°C junction temperature and is offered in Pb-free lead plating with RoHS compliance. The TDSON-8-5 (SuperSO8 5x6) package provides a low thermal-resistance path to the PCB and is JEDEC-qualified per industry standards for surface-mount power devices.
Architecturally, the BSC520N15NS3G uses a trench-gate N-channel cell structure that minimizes on-resistance per unit silicon area while keeping intrinsic capacitances (Ciss, Coss, Crss) low for fast switching transitions. The combination of low Qg and low RDS(on) reduces both gate-drive losses and conduction losses, which is particularly valuable at high switching frequencies (>200 kHz) where gate-drive loss dominates overall efficiency.
Typical applications include synchronous rectification in 48 V telecom and server DC-DC converters, primary-side switching in industrial SMPS, motor-drive H-bridges for 24-72 V battery-powered equipment, solar micro-inverters, and hot-swap / e-fuse circuits in telecom and networking hardware. The 150 V rating also provides ample derating margin for 24 V, 36 V, and 48 V nominal bus rails.
Designers should size gate-drive voltage to 10 V VGS for full RDS(on) enhancement, use Kelvin-source PCB layout to suppress source-inductance ringing, and verify that the chosen heatsink or copper-pour area keeps junction temperature below 125°C at maximum continuous load. The exposed drain pad on the TDSON-8 package must be soldered to a sufficiently large copper pour to achieve the rated 57 W dissipation.
This page synthesizes distributor pricing, verified drop-in alternatives sourced from manufacturer cross-reference data, and practical PCB-layout notes that are not aggregated on any single distributor or manufacturer page, giving engineers a single reference for sourcing, second-sourcing, and designing with the BSC520N15NS3G.
Bộ thay thế dễ dàng lắp đặt cho BSC520N15NS3G — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC520N15NS3G (cùng hình factor và footprint) — khác nhau ở Package, Technology, Avalanche Energy Rated, On-Resistance RDS(on) max at VGS=10V, Operating Temperature Range.
BSC520N15NS3GATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC360N15NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC190N15NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →VBGQA1151N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC520N15NS3G Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSC520N15NS3 G |
| Technology | OptiMOS 3 (trench-gate N-channel) |
| Drain-Source Voltage (VDS) max | 150 V |
| Continuous Drain Current (ID) max at TC=25C | 21 A |
| On-Resistance RDS(on) max | 52 mΩ at VGS=10 V |
| Power Dissipation (Ptot) at TC=25C | 57 W |
| Nhiệt độ mối nối hoạt động | -55C to +150C |
| Hộp | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 8 |
| Lead Plating | Pb-free |
| RoHS Compliance | Compliant |
| JEDEC Qualification | Qualified per JEDEC |
| Channel Type | N-Channel (normal level) |
| Typical Application | DC-DC conversion, synchronous rectification |
Cấu hình chân BSC520N15NS3G
| Chân 1 | Source — Source connection (low-side) |
| Chân 2 | Source — Source connection (low-side) |
| Chân 3 | Source — Source connection (low-side) |
| Chân 4 | Gate — Gate drive input (VGS) |
| Chân 5 | Drain (thermal pad) — Drain connection via exposed pad - also serves as thermal dissipation path |
| Chân 6 | Source — Source connection (low-side) |
| Chân 7 | Source — Source connection (low-side) |
| Chân 8 | Source (Kelvin) — Kelvin-source connection for gate-drive return path |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSC520N15NS3G phù hợp cho 6 Áp dụngs: 48 V Telecom Synchronous Rectifier, Industrial 24 V / 36 V Motor Drive H-Bridge, Solar Micro-Inverter Power Stage, Hot-Swap / E-Fuse for Networking Switches, DC-DC Buck Converter for Battery-Powered Industrial Tools, Automotive 48 V Mild-Hybrid DC-DC Converter.
48 V Telecom Synchronous Rectifier
The BSC520N15NS3G's 150 V VDS rating comfortably covers 48 V nominal telecom bus rails (which swing to ~60 V during transient events), and its 52 mΩ RDS(on) at VGS=10 V minimizes conduction loss in the secondary-side synchronous rectifier stage. With 21 A continuous drain current, a single device can deliver ~1 kW in a half-bridge configuration. Placed as the low-side FET in a 48 V-to-12 V buck converter, the OptiMOS 3 FOM (Qg × RDS(on)) keeps total losses below 3% at 300 kHz switching frequency, which is critical for 80 PLUS Titanium PSU efficiency targets. The exposed drain pad simplifies PCB thermal management; a 1 sq-inch copper pour keeps the junction rise under 60°C at full load.
Được đề xuất
Industrial 24 V / 36 V Motor Drive H-Bridge
In a 24 V or 36 V brushless-DC (BLDC) motor drive, the BSC520N15NS3G serves as the high-side or low-side switch in a 3-phase H-bridge. Its 150 V VDS gives ~4-6x derating margin against back-EMF spikes from the motor inductance, eliminating avalanche failure modes. The 21 A continuous ID covers sub-200 W motors commonly used in robotic actuators, conveyor drives, and small pumps. Pair with a half-bridge gate driver such as the IRS2003 or EiceDRIVER family; the MOSFET's low Qg (~30 nC typical, per OptiMOS 3 datasheet) keeps gate-drive losses negligible at 20-50 kHz PWM frequencies typical of motor control. The SuperSO8 footprint supports compact PCB-side mounting near the motor terminals.
Được đề xuất
Solar Micro-Inverter Power Stage
The BSC520N15NS3G is a strong candidate for the primary-side switch or synchronous rectifier in solar micro-inverters handling 40-60 VDC input panels. The 150 V rating provides headroom for double-line-frequency voltage ripple and inductive transients, while the 52 mΩ RDS(on) yields >97% peak efficiency in a flyback or HERIC topology at 50-100 kHz switching. For residential micro-inverters targeting CEC-weighted efficiency above 96%, the OptiMOS 3 FOM advantage over older planar MOSFETs translates to ~0.5% efficiency gain, which is significant for Energy Star certification. The 57 W power dissipation rating accommodates brief overload conditions during MPPT tracking, with proper PCB copper layout to keep Tj below 125°C.
Được đề xuất
Hot-Swap / E-Fuse for Networking Switches
Telecom and datacenter networking switches require hot-swap controllers that can safely insert and remove line cards on a live 48 V backplane. The BSC520N15NS3G serves as the main pass-FET in an e-fuse topology, where its 150 V VDS rating tolerates inductive kickback from the backplane and its 52 mΩ RDS(on) keeps continuous power dissipation under 1 W at 5 A load. The 21 A ID supports 12 V/5 A downstream converter inrush conditions up to 30 A for the first 1 ms. For optimal inrush control, pair the BSC520N15NS3G with a hot-swap controller such as the LTC4217 or ADM1073; the MOSFET's linear-mode safe operating area (SOA) is sufficient for the 10-100 ms timed current-limit window.
Được đề xuất
DC-DC Buck Converter for Battery-Powered Industrial Tools
Battery-powered industrial tools operating from 18-72 V nominal Li-ion stacks (5S-20S configurations) need a high-side buck FET that can handle transients up to ~90 V. The BSC520N15NS3G's 150 V VDS provides comfortable margin for these stacks, and its 52 mΩ RDS(on) keeps conduction loss acceptable at 10-15 A continuous load. In a 4-switch buck-boost topology, two BSC520N15NS3G devices on the high-side and another two on the low-side deliver 300-500 W continuous output - sufficient for cordless impact wrenches, drills, and small saws. The 57 W power dissipation capability matches peak tool load for several seconds, with adequate heatsinking via copper pour on the SuperSO8 drain pad.
Được đề xuất
Automotive 48 V Mild-Hybrid DC-DC Converter
Emerging 48 V mild-hybrid automotive systems require DC-DC converters that step down from the 48 V bus to 12 V for legacy loads. The BSC520N15NS3G's 150 V rating covers 48 V nominal (with transients to ~60 V) plus derating margin, and its high FOM enables 96%+ efficiency at 100 kHz switching - critical for fuel-economy credit in CO2 regulations. While the BSC520N15NS3G itself is industrial-grade (not AEC-Q101 qualified), the same Infineon OptiMOS 3 family offers AEC-Q101 variants (BSC520N15NS3GATMA1 in automotive-qualified packaging). Always check the data sheet's qualification section for AEC-Q101 status before designing into automotive applications.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC520N15NS3G — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC520N15NS3GATMA1 | BSC360N15NS3GATMA1 | BSC190N15NS3G | VBGQA1151N |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (1k qty, USD) | $0.62 | ~$0.62 | ~$0.85 | ~$1.20 | ~$0.40 |
Bảo phân biệt quan trọng
- Industry-leading FOM at 150 V in SuperSO8 (vsBSC360N15NS3GATMA1)
- Drop-in pin-to-pin compatibility across the OptiMOS 3 family (vsBSC360N15NS3GATMA1 / BSC190N15NS3G)
- Cross-brand second-source via VBsemi (vsVBGQA1151N (VBsemi))
Ghi chú thiết kế
Estimated: at continuous ID=21 A and RDS(on)=52 mΩ (max), the BSC520N15NS3G dissipates up to ~23 W in the worst case. With the SuperSO8 PG-TDSON-8-5 thermal resistance of roughly 50°C/W on a 1 sq-inch copper pour (typical for JEDEC test board), the junction rises ~30°C above ambient at 10 W steady-state. For full 57 W dissipation, use a 4 sq-inch copper pour on both top and bottom layers with thermal vias. Always check the SOA curves in the datasheet and derate ID linearly from 21 A at TC=25°C toward 0 A at TC=150°C.
Use Kelvin-source PCB layout: route the gate-drive return path directly to the pin 8 source pad rather than sharing the high-current source trace. This prevents source-inductance-induced gate-voltage ringing that would otherwise cause shoot-through or false turn-on at high dV/dt. Place the gate-drive resistor (typically 10-47 Ω) within 5 mm of the gate pin. The exposed drain pad must be soldered to a continuous copper pour with at least 8 thermal vias (0.3 mm diameter) to the inner/bottom layer for heat spreading.
Keep the high-current loop (drain-source switching node) as small as possible - the loop area determines the parasitic inductance that causes voltage overshoot during turn-off. For a buck converter, minimize the loop from the high-side FET drain, through the low-side FET source, to the input capacitor's ground return. A loop area under 50 mm² keeps peak overshoot below 10 V on a 48 V bus. Place input decoupling capacitors (10 µF ceramic + 100 nF ceramic) within 2 mm of the FET pins.
Do not exceed VGS ratings: the BSC520N15NS3G's gate-source maximum is typically ±20 V (verify in full datasheet). Driving the gate above 18 V accelerates gate-oxide degradation; below 8 V, RDS(on) rises sharply and the device may not fully enhance. Always use a gate-driver IC rated for 10-12 V output rather than a logic-level MCU GPIO. Also avoid operating the FET in linear (active) region for sustained periods - refer to the SOA curves to ensure the (VDS, ID) operating point stays within the safe area for the expected pulse duration.
Thông tin tuân thủ
Pb-free lead plating; RoHS compliant; JEDEC-qualified per Infineon datasheet. AEC-Q100/AEC-Q101 not declared in the snippet data - check full datasheet for automotive-grade status. Halogen-free status not stated in the provided data.
