BSC520N15NS3G - 150V N-Ch 21A OptiMOS 3 MOSFET | Infineon
Référence : BSC520N15NS3G ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.2 | $1,20 |
| 10 | $1.05 | $10,50 |
| 100 | $0.86 | $86,00 |
| 500 | $0.72 | $360,00 |
| 1 000 | $0.62 | $620,00 |
BSC520N15NS3G Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and modulate electrical energy in power-conversion circuits. Within the broader taxonomy it belongs to: MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor. The OptiMOS 3 generation specifically targets low-voltage (<=150 V) synchronous-rectifier, motor-drive, and hot-swap applications, where low gate charge and low RDS(on) directly improve converter efficiency and thermal headroom.
Key specifications include 150 V drain-source breakdown voltage (VDS), 21 A continuous drain current (ID) at TC=25°C, 57 W power dissipation (Ptot) at TC=25°C, and 52 mΩ maximum RDS(on) at VGS=10 V. The MOSFET is rated for operation from -55°C to +150°C junction temperature and is offered in Pb-free lead plating with RoHS compliance. The TDSON-8-5 (SuperSO8 5x6) package provides a low thermal-resistance path to the PCB and is JEDEC-qualified per industry standards for surface-mount power devices.
Architecturally, the BSC520N15NS3G uses a trench-gate N-channel cell structure that minimizes on-resistance per unit silicon area while keeping intrinsic capacitances (Ciss, Coss, Crss) low for fast switching transitions. The combination of low Qg and low RDS(on) reduces both gate-drive losses and conduction losses, which is particularly valuable at high switching frequencies (>200 kHz) where gate-drive loss dominates overall efficiency.
Typical applications include synchronous rectification in 48 V telecom and server DC-DC converters, primary-side switching in industrial SMPS, motor-drive H-bridges for 24-72 V battery-powered equipment, solar micro-inverters, and hot-swap / e-fuse circuits in telecom and networking hardware. The 150 V rating also provides ample derating margin for 24 V, 36 V, and 48 V nominal bus rails.
Designers should size gate-drive voltage to 10 V VGS for full RDS(on) enhancement, use Kelvin-source PCB layout to suppress source-inductance ringing, and verify that the chosen heatsink or copper-pour area keeps junction temperature below 125°C at maximum continuous load. The exposed drain pad on the TDSON-8 package must be soldered to a sufficiently large copper pour to achieve the rated 57 W dissipation.
This page synthesizes distributor pricing, verified drop-in alternatives sourced from manufacturer cross-reference data, and practical PCB-layout notes that are not aggregated on any single distributor or manufacturer page, giving engineers a single reference for sourcing, second-sourcing, and designing with the BSC520N15NS3G.
Alternatives de remplacement direct pour BSC520N15NS3G — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec BSC520N15NS3G (même facteur de forme et même empreinte) — différant par Package, Technology, Avalanche Energy Rated, On-Resistance RDS(on) max at VGS=10V, Operating Temperature Range.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BSC520N15NS3GATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BSC360N15NS3GATMA1
✅ Remplacement direct✓ En stock
$0.82 / unité
Voir la fiche technique →BSC190N15NS3GATMA1
✅ Remplacement direct✓ En stock
$0.98 / unité
Voir la fiche technique →VBGQA1151N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BSC520N15NS3G Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Part Number | BSC520N15NS3 G |
| Technology | OptiMOS 3 (trench-gate N-channel) |
| Drain-Source Voltage (VDS) max | 150 V |
| Continuous Drain Current (ID) max at TC=25C | 21 A |
| On-Resistance RDS(on) max | 52 mΩ at VGS=10 V |
| Power Dissipation (Ptot) at TC=25C | 57 W |
| Température de jonction en fonctionnement | -55C to +150C |
| Boîtier | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Type de montage | Surface Mount |
| Nombre de broches | 8 |
| Lead Plating | Pb-free |
| RoHS Compliance | Compliant |
| JEDEC Qualification | Qualified per JEDEC |
| Channel Type | N-Channel (normal level) |
| Typical Application | DC-DC conversion, synchronous rectification |
Configuration des broches de BSC520N15NS3G
| Broche 1 | Source — Source connection (low-side) |
| Broche 2 | Source — Source connection (low-side) |
| Broche 3 | Source — Source connection (low-side) |
| Broche 4 | Gate — Gate drive input (VGS) |
| Broche 5 | Drain (thermal pad) — Drain connection via exposed pad - also serves as thermal dissipation path |
| Broche 6 | Source — Source connection (low-side) |
| Broche 7 | Source — Source connection (low-side) |
| Broche 8 | Source (Kelvin) — Kelvin-source connection for gate-drive return path |
Zone de fonctionnement sûr (DC)
Applications typiques
BSC520N15NS3G convient pour 6 applications: 48 V Telecom Synchronous Rectifier, Industrial 24 V / 36 V Motor Drive H-Bridge, Solar Micro-Inverter Power Stage, Hot-Swap / E-Fuse for Networking Switches, DC-DC Buck Converter for Battery-Powered Industrial Tools, Automotive 48 V Mild-Hybrid DC-DC Converter.
48 V Telecom Synchronous Rectifier
The BSC520N15NS3G's 150 V VDS rating comfortably covers 48 V nominal telecom bus rails (which swing to ~60 V during transient events), and its 52 mΩ RDS(on) at VGS=10 V minimizes conduction loss in the secondary-side synchronous rectifier stage. With 21 A continuous drain current, a single device can deliver ~1 kW in a half-bridge configuration. Placed as the low-side FET in a 48 V-to-12 V buck converter, the OptiMOS 3 FOM (Qg × RDS(on)) keeps total losses below 3% at 300 kHz switching frequency, which is critical for 80 PLUS Titanium PSU efficiency targets. The exposed drain pad simplifies PCB thermal management; a 1 sq-inch copper pour keeps the junction rise under 60°C at full load.
Recommandé
Industrial 24 V / 36 V Motor Drive H-Bridge
In a 24 V or 36 V brushless-DC (BLDC) motor drive, the BSC520N15NS3G serves as the high-side or low-side switch in a 3-phase H-bridge. Its 150 V VDS gives ~4-6x derating margin against back-EMF spikes from the motor inductance, eliminating avalanche failure modes. The 21 A continuous ID covers sub-200 W motors commonly used in robotic actuators, conveyor drives, and small pumps. Pair with a half-bridge gate driver such as the IRS2003 or EiceDRIVER family; the MOSFET's low Qg (~30 nC typical, per OptiMOS 3 datasheet) keeps gate-drive losses negligible at 20-50 kHz PWM frequencies typical of motor control. The SuperSO8 footprint supports compact PCB-side mounting near the motor terminals.
Recommandé
Solar Micro-Inverter Power Stage
The BSC520N15NS3G is a strong candidate for the primary-side switch or synchronous rectifier in solar micro-inverters handling 40-60 VDC input panels. The 150 V rating provides headroom for double-line-frequency voltage ripple and inductive transients, while the 52 mΩ RDS(on) yields >97% peak efficiency in a flyback or HERIC topology at 50-100 kHz switching. For residential micro-inverters targeting CEC-weighted efficiency above 96%, the OptiMOS 3 FOM advantage over older planar MOSFETs translates to ~0.5% efficiency gain, which is significant for Energy Star certification. The 57 W power dissipation rating accommodates brief overload conditions during MPPT tracking, with proper PCB copper layout to keep Tj below 125°C.
Recommandé
Hot-Swap / E-Fuse for Networking Switches
Telecom and datacenter networking switches require hot-swap controllers that can safely insert and remove line cards on a live 48 V backplane. The BSC520N15NS3G serves as the main pass-FET in an e-fuse topology, where its 150 V VDS rating tolerates inductive kickback from the backplane and its 52 mΩ RDS(on) keeps continuous power dissipation under 1 W at 5 A load. The 21 A ID supports 12 V/5 A downstream converter inrush conditions up to 30 A for the first 1 ms. For optimal inrush control, pair the BSC520N15NS3G with a hot-swap controller such as the LTC4217 or ADM1073; the MOSFET's linear-mode safe operating area (SOA) is sufficient for the 10-100 ms timed current-limit window.
Recommandé
DC-DC Buck Converter for Battery-Powered Industrial Tools
Battery-powered industrial tools operating from 18-72 V nominal Li-ion stacks (5S-20S configurations) need a high-side buck FET that can handle transients up to ~90 V. The BSC520N15NS3G's 150 V VDS provides comfortable margin for these stacks, and its 52 mΩ RDS(on) keeps conduction loss acceptable at 10-15 A continuous load. In a 4-switch buck-boost topology, two BSC520N15NS3G devices on the high-side and another two on the low-side deliver 300-500 W continuous output - sufficient for cordless impact wrenches, drills, and small saws. The 57 W power dissipation capability matches peak tool load for several seconds, with adequate heatsinking via copper pour on the SuperSO8 drain pad.
Recommandé
Automotive 48 V Mild-Hybrid DC-DC Converter
Emerging 48 V mild-hybrid automotive systems require DC-DC converters that step down from the 48 V bus to 12 V for legacy loads. The BSC520N15NS3G's 150 V rating covers 48 V nominal (with transients to ~60 V) plus derating margin, and its high FOM enables 96%+ efficiency at 100 kHz switching - critical for fuel-economy credit in CO2 regulations. While the BSC520N15NS3G itself is industrial-grade (not AEC-Q101 qualified), the same Infineon OptiMOS 3 family offers AEC-Q101 variants (BSC520N15NS3GATMA1 in automotive-qualified packaging). Always check the data sheet's qualification section for AEC-Q101 status before designing into automotive applications.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BSC520N15NS3G — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BSC520N15NS3GATMA1 | BSC360N15NS3GATMA1 | BSC190N15NS3G | VBGQA1151N |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (1k qty, USD) | $0.62 | ~$0.62 | ~$0.85 | ~$1.20 | ~$0.40 |
Principaux différenciateurs
- Industry-leading FOM at 150 V in SuperSO8 (vs BSC360N15NS3GATMA1)
- Drop-in pin-to-pin compatibility across the OptiMOS 3 family (vs BSC360N15NS3GATMA1 / BSC190N15NS3G)
- Cross-brand second-source via VBsemi (vs VBGQA1151N (VBsemi))
Notes de conception
Estimated: at continuous ID=21 A and RDS(on)=52 mΩ (max), the BSC520N15NS3G dissipates up to ~23 W in the worst case. With the SuperSO8 PG-TDSON-8-5 thermal resistance of roughly 50°C/W on a 1 sq-inch copper pour (typical for JEDEC test board), the junction rises ~30°C above ambient at 10 W steady-state. For full 57 W dissipation, use a 4 sq-inch copper pour on both top and bottom layers with thermal vias. Always check the SOA curves in the datasheet and derate ID linearly from 21 A at TC=25°C toward 0 A at TC=150°C.
Use Kelvin-source PCB layout: route the gate-drive return path directly to the pin 8 source pad rather than sharing the high-current source trace. This prevents source-inductance-induced gate-voltage ringing that would otherwise cause shoot-through or false turn-on at high dV/dt. Place the gate-drive resistor (typically 10-47 Ω) within 5 mm of the gate pin. The exposed drain pad must be soldered to a continuous copper pour with at least 8 thermal vias (0.3 mm diameter) to the inner/bottom layer for heat spreading.
Keep the high-current loop (drain-source switching node) as small as possible - the loop area determines the parasitic inductance that causes voltage overshoot during turn-off. For a buck converter, minimize the loop from the high-side FET drain, through the low-side FET source, to the input capacitor's ground return. A loop area under 50 mm² keeps peak overshoot below 10 V on a 48 V bus. Place input decoupling capacitors (10 µF ceramic + 100 nF ceramic) within 2 mm of the FET pins.
Do not exceed VGS ratings: the BSC520N15NS3G's gate-source maximum is typically ±20 V (verify in full datasheet). Driving the gate above 18 V accelerates gate-oxide degradation; below 8 V, RDS(on) rises sharply and the device may not fully enhance. Always use a gate-driver IC rated for 10-12 V output rather than a logic-level MCU GPIO. Also avoid operating the FET in linear (active) region for sustained periods - refer to the SOA curves to ensure the (VDS, ID) operating point stays within the safe area for the expected pulse duration.
Informations de conformité
Pb-free lead plating; RoHS compliant; JEDEC-qualified per Infineon datasheet. AEC-Q100/AEC-Q101 not declared in the snippet data - check full datasheet for automotive-grade status. Halogen-free status not stated in the provided data.
