BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
MPN: BSC050N03LSGATMA1 ✓ Hoạt độngBSC050N03LSGATMA1 Tóm tắt
A power MOSFET is a voltage-controlled switch used to efficiently route or regulate current in switching power supplies, motor drives, and load-management circuits. Within the discrete-semiconductor hierarchy it sits below IGBTs in the family tree of voltage-controlled power switches, and within Infineon's product taxonomy it belongs to the OptiMOS 3 30 V N-channel family, which itself derives from the broader OptiMOS power-management platform. Its primary role is synchronous-rectifier or control-FET duty in DC-DC converter power stages where conduction loss and switching loss must both be minimized.
Key electrical characteristics include a 30 V VDS maximum rating, a 5 mOhm maximum RDS(on) at VGS = 10 V, an 80 A continuous drain current at case temperature, a 50 W power dissipation rating at Tc = 25 C, and an optimized gate-charge profile designed for high-frequency buck, synchronous-buck, and OR-ing applications. The SuperSO8 5x6 footprint exposes a substantial source pad that doubles as the primary thermal dissipation path, allowing the die to deliver high current without a separate heatsink.
The device uses Infineon's trench MOSFET process technology, which achieves a per-cell on-resistance significantly lower than planar MOSFETs of equivalent die size. The SuperSO8 package pairs a flip-chip-style die attach with a low-inductance lead frame, reducing source inductance and improving switching performance in multi-MHz synchronous-rectifier positions.
Typical applications include synchronous-rectifier stages in 12 V-input buck converters for servers and telecom brick modules, high-side and low-side switches in point-of-load regulators, battery-management protection FETs, and OR-ing FETs in redundant power architectures. Its low gate charge and Qgd also suit motor-control and Class-D audio amplifier output stages where switching losses dominate thermal budgets.
When designing with this part, pay close attention to the gate-drive voltage. The OptiMOS 3 30 V platform is specified for full enhancement at VGS = 10 V, and a 4.5 V drive is only suitable for low-current applications because RDS(on) rises sharply at reduced gate drive. Use a dedicated gate-driver IC and place the bootstrap or charge-pump supply as close to the gate pin as possible to minimize ringing and unintended shoot-through.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for evaluating BSC050N03LSGATMA1 against its same-family and competitor equivalents in the 30 V N-channel SuperSO8 segment.
Bộ thay thế dễ dàng lắp đặt cho BSC050N03LSGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC050N03LSGATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
BSC050N03LSGXT
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC0906NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC030N03LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC014N04LSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ130N03LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →FDMS8027S
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC050N03LSGATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSC050N03LSGATMA1 |
| Technology | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at Tc | 80 A |
| Continuous Drain Current (ID) at Ta | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm |
| Power Dissipation (PD) at Tc | 50 W |
| Power Dissipation (PD) at Ta | 2.5 W |
| Hộp | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55 C to +150 C |
| Channel Type | N-Channel |
| Trạng thái RoHS | Compliant |
| Cấp MSL | 1 |
Cấu hình chân BSC050N03LSGATMA1
| Chân 1 | S — Source |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | G — Gate |
| Chân 5 | S — Source |
| Chân 6 | S — Source |
| Chân 7 | S — Source |
| Chân 8 | S — Source |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSC050N03LSGATMA1 phù hợp cho 6 Áp dụngs: 12V Synchronous Rectifier in Server / Datacom POL, Telecom Brick Module DC-DC Stage, Battery Management Protection FET (12V-24V packs), Hot-Swap / OR-ing FET in Redundant Power, Class-D Audio Amplifier Output Stage, Motor Drive and PWM Switching.
12V Synchronous Rectifier in Server / Datacom POL
The BSC050N03LSGATMA1 is ideally suited to the low-side synchronous-rectifier position in 12 V-input buck converters powering server and datacom point-of-load (POL) rails. Its 5 mOhm maximum RDS(on) at VGS = 10 V minimizes conduction loss at 20-40 A continuous loads, while the OptiMOS 3 trench process delivers low gate and output charge for multi-MHz switching. The SuperSO8 5x6 exposed source pad provides a low-inductance thermal path, allowing the FET to sustain 50 W at case temperature without a heatsink. Compared with older 8-10 mOhm alternatives, the 5 mOhm figure cuts I2R loss by 37-50%, directly improving converter efficiency and reducing thermal stress on neighboring components. Drive the gate with a dedicated 10 V gate-driver IC to stay in full enhancement.
Được đề xuất
Telecom Brick Module DC-DC Stage
In isolated 24 V or 48 V-to-12 V telecom brick modules the BSC050N03LSGATMA1 is well-matched to the secondary-side synchronous-rectifier role where 30 V VDS provides ample margin over the 12 V rectified rail. The 80 A continuous drain-current rating at case temperature handles the high di/dt transients of brick modules delivering 200-400 W, and the 5 mOhm RDS(on) keeps secondary-side conduction loss in check. The SuperSO8 5x6 footprint is the industry-standard secondary-FET package, simplifying layout reuse across product variants. The low Qgd of the OptiMOS 3 process also enables higher switching frequencies, which shrink the output inductor and capacitor count in compact brick designs.
Được đề xuất
Battery Management Protection FET (12V-24V packs)
The BSC050N03LSGATMA1 functions as a low-side battery-protection or hot-swap FET in 12 V-24 V lithium-ion and lead-acid battery packs, where its 30 V VDS rating and 80 A continuous current capability comfortably cover the operating envelope. The 5 mOhm RDS(on) keeps the milliohm-level voltage drop across the FET manageable, preserving system efficiency during high-current discharge. The SuperSO8 5x6 exposed source pad simplifies PCB thermal design because the source tab doubles as the primary heat-spreader. The OptiMOS 3 process is avalanche-rated, which is critical for inductive load switching events in battery systems. Designers should still add a TVS clamp and a proper SOA derating for short-circuit events.
Được đề xuất
Hot-Swap / OR-ing FET in Redundant Power
For OR-ing and hot-swap controller applications in redundant -48 V or 12 V power architectures the BSC050N03LSGATMA1 is well-suited as the series-pass protection FET. The 30 V VDS rating supports 12 V redundant rails with 150% transient headroom, and the 5 mOhm RDS(on) minimizes voltage drop and heat in the always-on path. The 80 A continuous current rating covers most blade-server and storage-system rails. Because the SuperSO8 5x6 footprint is the industry standard for OR-ing FETs, the BSC050N03LSGATMA1 can drop into existing reference designs from major OR-ing-controller vendors. Avalanche ruggedness and a 150 C maximum junction temperature make it tolerant of fault clearing events.
Được đề xuất
Class-D Audio Amplifier Output Stage
The BSC050N03LSGATMA1 is a strong candidate for the output-stage switches of mid-power Class-D audio amplifiers, where its low gate charge and 5 mOhm RDS(on) reduce switching and conduction loss simultaneously. The 30 V VDS rating covers 12 V and 18 V amplifier supply rails, and the 80 A peak current capability handles the high di/dt transitions of audio PWM waveforms. The SuperSO8 5x6 exposed source pad provides the thermal mass needed to absorb continuous audio output power without exceeding the 150 C junction limit. Designers should use a dedicated gate driver and pay attention to dead-time optimization to minimize crossover distortion.
Được đề xuất
Motor Drive and PWM Switching
In low-voltage brushless DC (BLDC) motor drives and high-frequency PWM switching stages the BSC050N03LSGATMA1 delivers the combination of low RDS(on) and low gate charge that motor-control designs demand. The 30 V VDS rating covers 12 V and 24 V motor rails, while the 80 A continuous current capability supports multi-amp motor phases. The SuperSO8 5x6 footprint is widely accepted as the standard low-side FET package for integrated motor-driver modules. The OptiMOS 3 trench process provides fast switching edges that reduce dead-time losses and audible PWM noise. Designers should add a small RC snubber across drain-source to limit voltage overshoot during motor commutation.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC050N03LSGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC050N03LSGXT | BSC030N03LSGATMA1 | BSC0906NSATMA1 | FDMS8027S |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | Power56 (5x6 equivalent) |
| VDS Max (V) | 30 V | 30 V | 30 V | 30 V | 30 V |
| RDS(on) Max at VGS=10V (mOhm) | 5 mOhm | 5 mOhm | 3 mOhm | 9 mOhm (approx) | Similar class |
| Technology Family | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS | Fairchild/onsemi PowerTrench |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Best-in-class 5 mOhm RDS(on) in SuperSO8 5x6 for 30 V N-channel (vsBSC0906NSATMA1)
- Lower cost than the 3 mOhm sibling while keeping the same footprint (vsBSC030N03LSGATMA1)
- Avalanche-rated OptiMOS 3 process suitable for OR-ing and hot-swap (vsFDMS8027S)
Ghi chú thiết kế
Estimated: at continuous 40 A load in a SuperSO8 5x6 footprint with RDS(on) of 5 mOhm, conduction loss is approximately 8 W. With 2 oz copper on a 1 sq-inch pad the package theta_JA is in the 40-50 C/W range, producing a 320-400 C/W equivalent junction-temperature rise. A larger copper area or forced-air cooling is required to keep Tj below 150 C; verify with the Infineon SOA curves. The exposed source pad MUST be soldered to the PCB thermal land for rated performance.
Minimize the high-current loop area between the input capacitor, the high-side FET, and the low-side FET to reduce ringing and EMI. Place the gate-drive components within 5 mm of the gate pin to keep the gate-drive loop small, and use a 10-100 ohm gate-drive resistor to control dV/dt. The SuperSO8 5x6 source pins 1-3 and 5-8 should all be soldered to the same source copper pour to share current and thermal dissipation.
Estimated: a 4.5 V gate drive on the BSC050N03LSGATMA1 will increase RDS(on) to roughly 1.5-2x the 10 V value, potentially doubling conduction loss. Always use a dedicated 10 V gate-driver IC. The OptiMOS 3 30 V platform is NOT logic-level compatible. For battery applications, do not rely on RDS(on) alone for short-circuit protection - add a current-sense resistor and a properly-rated fuse or controller.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - automotive designs should use the -AEC1 suffix variant. Lead-free reflow profile per J-STD-020.
